Semiconductors - Discretes Infineon

Power MOSFET, N Channel, 200 V, 15.2 A, 0.09 ohm, TSDSON, Surface Mount

Power MOSFET, N Channel, 55 V, 35 A, 0.0115 ohm, TO-220, Through Hole

Power MOSFET, N Channel, 55 V, 35 A, 0.0115 ohm, TO-263 (D2PAK), Surface Mount

Power MOSFET, N Channel, 49 V, 80 A, 5800 µohm, TO-263 (D2PAK), Surface Mount

Power MOSFET, N Channel, 200 V, 21 A, 0.1 ohm, TO-220, Through Hole

Standard Recovery Diode, 1.8 kV, 1.23 kA, Single, 1.77 V, 14.8 kA

IGBT Module, Dual [Half Bridge], 50 A, 1.35 V, 150 °C, Module

IGBT Module, Dual [Half Bridge], 50 A, 1.35 V, 150 °C, Module

IGBT Module, Three Phase Inverter, 50 A, 2.05 V, 180 W, 150 °C, Module

IGBT Module, Four Pack, 160 A, 1.55 V, 150 °C, Module

IGBT Module, Four Pack, 200 A, 1.46 V, 150 °C, Module

IGBT Module, Four Pack, 300 A, 1.68 V, 150 °C, Module

IGBT Module, Dual [Half Bridge], 40 A, 1.4 V, 150 °C, Module

IGBT Module, Dual [Half Bridge], 80 A, 1.55 V, 150 °C, Module

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Dual Gate

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Dual Gate

Thyristor Diode Module, Series Connected, 540A, 2.2kV, 2.2 V, Dual Gate

SCR THYRISTOR, 1.6KV, 586A

SCR THYRISTOR, 1.6KV, 635A

Thyristor Diode Module, 1.8 kV, 700 A, 2 V Vgt, 0.25 A Igt, 20 kA Itsm

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Single Gate

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Single Gate

SCR THYRISTOR, 1.6KV, 515A

Thyristor Diode Module, Series Connected, 540A, 2.2kV, 2.2 V, Single Gate

SCR THYRISTOR, 1.6KV, 586A

SCR THYRISTOR, 1.6KV, 635A

Thyristor Diode Module, 1.8 kV, 700 A, 2 V Vgt, 0.25 A Igt, 20 kA Itsm

IGBT Module, Twelve Pack, 25 A, 1.85 V, 160 W, 175 °C, Module

IGBT Module, EasyPACK 2B, Three level Inverter, 100 A, 1.45 V, 300 W, 150 °C, Module

IGBT Module, Four Pack, 100 A, 1.68 V, 150 °C, Module