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ETD420N22P60HPSA1
Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Dual Gate
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Thyristors - SCR Modules
- No. of Pins: 5Pins
- SCR Module Type: Series Connected - SCR / Diode
- Thyristor Mounting: Panel
- Holding Current Max: 300mA
- On State RMS Current: 700A
- Thyristor Case Style: Module
- Average Forward Current: 427A
- Average On State Current: 427A
- Gate Trigger Current Max: 250mA
- Gate Trigger Voltage Max: 2.2V
- Operating Temperature Max: 135°C
- Repetitive Peak Reverse Voltage: 2.2kV
- Peak Non Repetitive Surge Current: 13.4kA
- Peak Repetitive Off State Voltage: 2.2kV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 175.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT420N22P60**
## **Key Parameters**
VDRM / VRRM 2200V ITAVM 427A (TC=85°C) ITSM 13400A VT0 0,85V rT 0,548mΩ RthJC 0,0795K/W Base plate 60mm
For type designation please refer to actual short form catalog
http://www.ifbip.com/catalog
## **Merkmale**
- Druckkontakt-Technologie für hohe Zuverlässigkeit
- Advanced Medium Power Technology (AMPT)
- Industrie-Standard-Gehäuse
- Elektrisch isolierte Bodenplatte
## **Features**
- Pressure contact technology for high reliability
- Advanced Medium Power Technology (AMPT)
- Industrial standard package
- Electrically insulated base plate
## **Typische Anwendungen**
- Sanftanlasser
- Gleichrichter für Antriebsapplikationen
- Kurzschließer-Applikationen
- Leistungssteller
- Gleichrichter für UPS
- Batterieladegleichrichter
- Statische Umschalter
- Bypass-Schalter
## **Typical Applications**
- Soft starter
- Rectifier for drives applications
- Crowbar applications
- Power controllers
- Rectifiers for UBS
- Battery chargers
- Static switches
- Bypass swich
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FFSe |<br>content of customer DMX code DMX code DMX code<br>digit digit quantity<br>a serial number 1..5 5<br>a SAP material number 6..12 7<br>a Internal production order number 13..20 8<br>a datecode (production year) 21..22 2<br>a datecode (production week) 23..24 2<br>**----- End of picture text -----**<br>
**TT TD** www.ifbip.com - support@infineon bip.com
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Revision: 3.1
## **Technische Information / technical information**
## **Netz-Thyristor-Modul**
## **Phase Control Thyristor Module**
## **eTT420N22P60**
**eTT420N22P60**
**eTD420N22P60**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT420N22P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|**Elektrische Eigenschaften / Electrical properties**<br>HöchstzulässigeWerte /Maximum ratedvalues<br>**eTT420N22P60**<br>**eTD420N22P60**<br>Periodische Vorwärts- und Rückwärts-Spitzensperrspannung<br>repetitive peak forward off-state and reverse voltages<br>Tvj= -40°C... Tvj max<br>VDRM,VRRM <br>2200 V<br>Vorwärts-Stoßspitzensperrspannung<br>non-repetitive peak forward off-state voltage<br>Tvj= -40°C... Tvj max<br>VDSM<br>2200 V<br>Rückwärts-Stoßspitzensperrspannung<br>non-repetitive peak reverse voltage<br>Tvj= +25°C... Tvj max<br>VRSM<br>2300 V<br>Durchlaßstrom-Grenzeffektivwert<br>maximum RMS on-state current<br>ITRMSM<br>700 A<br>Dauergrenzstrom<br>average on-state current<br>TC= 85°C<br>ITAVM<br>427<br>A<br>Stoßstrom-Grenzwert<br>surge current<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>ITSM<br>13400<br>11400<br>A<br>A<br>Grenzlastintegral<br>I²t-value<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>I²t<br>897800<br>649800<br>A²s<br>A²s<br>Kritische Stromsteilheit<br>critical rate of rise of on-state current<br>DIN IEC 747-6<br>f = 50Hz, iGM= 1A, diG/dt = 1A/µs<br>(diT/dt)cr<br>150 A/µs<br>Kritische Spannungssteilheit<br>critical rate of rise of off-state voltage<br>Tvj= Tvj max, vD= 0,67 VDRM<br>(dvD/dt)cr<br>1000 V/µs<br>CharakteristischeWerte / Characteristicvalues<br>Durchlaßspannung<br>on-state voltage<br>Tvj= Tvj max, iT= 1700 A<br>vT<br>max.<br>1,94<br>V<br>Schleusenspannung<br>threshold voltage<br>Tvj= Tvj max<br>V(TO)<br>max.<br>0,85 V<br>Ersatzwiderstand<br>slope resistance<br>Tvj= Tvj max<br>rT<br>max. 0,548 mΩ<br>Zündstrom<br>gate trigger current<br>Tvj= 25°C, vD= 12V<br>IGT<br>max.<br>250 mA<br>Zündspannung<br>gate trigger voltage<br>Tvj= 25°C, vD= 12V<br>VGT<br>max.<br>2,2 V<br>Nicht zündender Steuerstrom<br>gate non-trigger current<br>Tvj= Tvj max, vD= 12V<br>Tvj= Tvj max, vD= 0,5 VDRM<br>IGD<br>max.<br>max.<br>10<br>5<br>mA<br>mA<br>Nicht zündende Steuerspannung<br>gate non-trigger voltage<br>Tvj= Tvj max, vD= 0,5 VDRM<br>VGD<br>max.<br>0,25 V<br>Haltestrom<br>holding current<br>Tvj= 25°C, vD= 12V, RA= 1Ω<br>IH<br>max.<br>300 mA<br>Einraststrom<br>latching current<br>Tvj= 25°C, vD= 12V, RGK≥ 10Ω<br>iGM= 1A, diG/dt = 1A/µs, tg= 20µs<br>IL<br>max.<br>1500 mA<br>Vorwärts- und Rückwärts-Sperrstrom<br>forward off-state and reverse current<br>Tvj= Tvj max<br>vD= VDRM, vR= VRRM<br>iD, iR<br>max.<br>90 mA<br>Zündverzug<br>gate controlled delay time<br>DIN IEC 747-6<br>Tvj= 25°C, iGM= 1A, diG/dt = 1A/µs<br>tgd<br>max.<br>4 µs<br>prepared by: AG<br>date of publication: 2018-07-30<br>approved by: ML<br>revision:<br>3.1||||||
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## **Technische Information / technical information**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT420N22P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|ThermischeEigenschaften<br>Mechanische Eigenschaften<br>**Elektrische Eigenschaften / Electrical properties**<br>Charakteristische Werte / Characteristic values<br>Freiwerdezeit<br>circuit commutated turn-off time<br>Tvj= Tvj max, iTM= ITAVM<br>vRM= 100 V, vDM= 0,67 VDRM<br>dvD/dt = 20 V/µs, -diT/dt = 10 A/µs<br>5.Kennbuchstabe / 5thletter O<br>tq<br>typ.<br>280<br>µs<br>Isolations-Prüfspannung<br>insulation test voltage<br>RMS, f = 50 Hz, t = 1min<br>RMS, f = 50 Hz, t = 1sec<br>VISOL<br>3,0<br>3,6<br>kV<br>kV<br>**Thermische Eigenschaften / Thermal properties**<br>Innerer Wärmewiderstand<br>thermal resistance, junction to case<br>pro Modul / per Module, Θ = 180° sin<br>pro Zweig / per arm, Θ = 180° sin<br>pro Modul / per Module, DC<br>pro Zweig / per arm, DC<br>RthJC<br>max.<br>max.<br>max.<br>max.<br>0,041<br>0,082<br>0,0397<br>0,0795<br>K/W<br>K/W<br>K/W<br>K/W<br>Übergangs-Wärmewiderstand<br>thermal resistance, case to heatsink<br>pro Modul / per Module<br>pro Zweig / per arm<br>RthCH<br>typ.<br>typ.<br>0,015<br>0,03<br>K/W<br>K/W<br>Höchstzulässige Sperrschichttemperatur<br>maximum junction temperature<br>Tvj max<br>135 °C<br>Betriebstemperatur<br>operating temperature<br>Tc op<br>-40...+135 °C<br>Lagertemperatur<br>storage temperature<br>Tstg<br>-40...+135 °C<br>**Mechanische Eigenschaften / Mechanicalproperties**<br>Gehäuse, siehe Anlage<br>case, see annex<br>Seite 4<br>page 4<br>Si-Element mit Druckkontakt<br>Si-pellet with pressure contact<br>Innere Isolation<br>internal insulation<br>Basisisolierung (Schutzklasse 1, EN61140)<br>Basic insulation (class 1, IEC61140)<br>AlN<br>Anzugsdrehmoment für mechanische Anschlüsse<br>mounting torque<br>Toleranz / Tolerance ± 15%<br>M1<br>6<br>Nm<br>Anzugsdrehmoment für elektrische Anschlüsse<br>terminal connection torque<br>Toleranz / Tolerance ± 10%<br>M2<br>12<br>Nm<br>Steueranschlüsse<br>control terminals<br>DIN 46 244<br>A 2,8 x 0,8<br>Gewicht<br>weight<br>G<br>typ.<br>830 g<br>Kriechstrecke<br>creepage distance<br>19 mm<br>Schwingfestigkeit<br>vibration resistance<br>f = 50 Hz<br>50 m/s²<br>file-No.<br>E 83335||||||
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**Technische Information / technical information**
d **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT420N22P60**
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screwing depth max.18<br>! ! , !<br>1<br> 6.5±0.2<br>(44) 50±0.5 44±0.5<br>M10<br>13±0.5<br>| 1 } i 30±1 > 1<br>1 Tl, ! | ;<br>! . |<br>25±0.3 25±0.3<br>112±0.3<br>124±0.5 base plate<br>| 127.5±1.5 1<br>145.6 [+2] -1<br>1 2 3 1 2 3<br>4 5 7 6 4 5<br>TT TD<br>52±1<br>10±0.2<br>latep 36±1<br>48±0.3 36±1 28±0.3 64±1.5<br>60±0.5 base<br>**----- End of picture text -----**<br>
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plug A 2.8x0.8<br>**----- End of picture text -----**<br>
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**Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module** a
## **eTT420N22P60**
**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC Analytical elements of transient thermal impedance ZthJC for DC**
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT420N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|
|---|---|---|---|---|---|---|---|
|**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DCthJC für DC für DC**<br>**Analytical elements of transient thermal impedance ZthJC for DCthJC for DC for DC**||||||||
|Pos. n|1|2|3|4|5|6|7|
|Rthn[K/W]|0,033|0,0159|0,02255|0,00811||||
|τn[s]|5,6|2,56939|0,8|0,00165||||
|Analytische Funktion / Analytical function:<br><br><br>~~~~<br>max<br>n<br>n=1<br>thn<br>thJC<br>n<br>– t<br>- e<br>1<br>R<br>Z||||||||
**Erhöhung des Zth DC bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ Rise of Zth DC for sinewave and rectangular current with different current conduction angles Θ ΔZth Θ rec / ΔZth Θ sin**
||Θ = 180°|Θ = 120°|Θ = 90°|Θ = 60°|Θ = 30°|
|---|---|---|---|---|---|
|ΔZth Θ rec<br>[K/W]|0,00827|0,01606|0,02307|0,03446|0,05416|
|ΔZth Θ sin<br>[K/W]|0,00255|0,00573|0,01107|0,02161|0,04364|
Zth Θ rec = Zth DC + Zth Θ rec
Zth Θ sin = Zth DC + Zth Θ sin
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Diagramme<br>Netz-Thyristor-Modul<br>Phase Control Thyristor Module<br>**----- End of picture text -----**<br>
## **eTT420N22P60**
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0,090 poo ee<br>a OC(NO<br>aa<br>aA(S(O<br>0,080 SNa (<br>aaa OKA(eI OO( O O ce OOO<br>LS(OO<br>0,070 A<br>aOKOO(GOOO<br>0,060 a a Aa OQOO(78 ((7,OOOOSS<br>aOQOO(NGOO<br>0,050 aee(L(ATTTAeeTTTTTFfeeSOoo<br>a a 7,<br>aa OQOOA(A GOOO<br>0,040 L aA<br>aa OOa OS(7AA(OOGOSO<br>0,030 OSoT(ATToa<br>a (OO<br>Fr<br>0,020 aAeeaeeAA cl>>< c——e—————((GO [ee] (GO [oo] SOSS O<br>0,010 aasoTa (OOTerSa (SO(SCoo<br>a OK(GO<br>a OC(OO<br>a a CO(OO<br>0,000 a sO OO [CC] SG GO<br>0,01 0,1 t [s] 1 10 100<br> [K/W]<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>
**Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)** Durchgangsverluste Parameter: Stromflußwinkel Θ / Current conduction angle Θ
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100 SSaa a a CCCO<br>a a (S(O<br>po<br>10 a a SSa a a a SSceSS SS ,( ——__~— c<br>a(ce SS<br>a a a a ee b mses<br>po ee a NY rT<br>eees eeOQ cet et<br>Po et Bll ee ee<br>1 po | -| A SS<br>_{OTTa eee =-—| aaa a a cs cS Se SS ce<br>— ee ee ee ee a ct a<br>————— oea eee eee mmA fT<br>BS| || mp|<br>eaaaccanacedeeterT| it [TT] TT TE<br>0,1<br>10 100 iG [mA] 1000 10000<br> [V]<br>G<br>v<br> =<br> =vj Tvj<br>= T<br>vj<br>T<br>**----- End of picture text -----**<br>
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Steuercharakteristik vG = f (iG) mit Zündbereichen für VD = 12 V<br>Gate characteristic vG = f (iG) with triggering area for VD = 12 V<br>Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) :<br>**----- End of picture text -----**<br>
a - 20W/10ms b - 40W/1ms c - 60W/0,5ms
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## **Technische Information /**
## **technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module** a
## **eTT420N22P60**
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1000<br>900 ee eeeeeHt++—++++74++++4+14174Qe OG OQ DC “+++Po+4<br>aQa GG GG<br>800 eG eeee<br>P| | |pe teoeree | | | PT |<br>700 ee J 180° sin a 4G eee<br>ee eee eee 120erec Ty ee [ep]<br>ee<br>600<br>Pf | tfeeft | eeft tf ff 60%ree |goerecYn| Ydea| Ee<br>500 Q<br>————}-——_ee = a0" ree:WeaI Yd7a| eetee eee eee<br>400 e e<br>ee ea 4a ee eee eee eee<br>300 ee ee ee ee ee eee eee<br>eeZe eee eee eee eee<br>200 PY<br>|| | |)VigAT Gehäusetemperatur bei Rechteck a T t trt<br>eeee<br>100<br>| |oT ee ee eee<br>0 PceetT Et eese es<br>0 100 200 300 400 500 600 700 800<br>ITAV [A]<br>[W]<br>TAV<br>P<br>**----- End of picture text -----**<br>
**Durchlassverlustleistung je Zweig / On-state power loss per arm PTAV = f(ITAV)**
Strombelastung je Zweig / Current load per arm
**Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)**
Parameter: Stromflußwinkel / Current conduction angle Θ
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140<br>Se| ee eee<br>120<br>NSS<br>PARSE<br>100<br>EERE RNENSSNe lee nee eee eee eee<br>pp NRE<br>80<br>po NE ON NONRL<br>SERRE Eee ee eee eee<br>poee<br>60<br>ee ee ee eee<br>40 p f<br>pf Q taorsin PE DC<br>PT sane com | 90° rec 120° rec 180° rec PP fe |<br>20<br>0 100 200 300 400 500 600 700 800<br>ITAVM [A]<br>[°C]<br>C<br>T<br>**----- End of picture text -----**<br>
## **Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)**
Strombelastung je Zweig / Current load per arm
**Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)**
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
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Technische Information /<br>technical information<br>**----- End of picture text -----**<br>
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Netz-Thyristor-Modul<br>Phase Control Thyristor Module<br>**----- End of picture text -----**<br>
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Phase Control Thyristor Module eTT420N22P60 InfineonGmbHTechnologies& Co. KG Bipolar<br>2800<br>2600 ee RthCA [K/W] - B2 ID a<br>ee = Pe<br>+<br>2400 ; | —} FERRE EERE EE EE R-Last SL<br>2200 SS 0,10 ee See ~ a R-load naanYs<br>2000 0,12 NOSN are VA, L-Last<br>1800 0,15 - L-load<br>P NNNSN eeTE2OT<br>1600<br>0,20<br>1400<br>p N EA R ee<br>0,25<br>1200<br>1000 DSS 0,30 Sn SSSEO EA(OG<br>800 N 0,40 N<br>SSS ee ee Ae eee eee<br>600 0,60 — TSS] AA<br>0,80 |) EE SSS a<br>400<br>1,00 ===—[SEE=SSSi" -SSaxsq a<br>200 2,00<br>SS ———— We a<br>0<br>20 40 60 80 100 120 0 200 400 600 800 1000<br>1,00 2,00 T A [°C] I D [A]<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
## **Höchstzulässiger Ausgangsstrom / Maximum rated output current ID**
B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit
Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot
Parameter:
Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung / Thermal resistance per chip cases to ambient RthCA
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ee R thCA [K/W] B6 i ID m ee<br>3500 ee | + a ee De ee ee ee ee ee eee<br>oo 0,10 ee ee ee<br>3~<br>3000 = Po<br>0,12<br>-<br>2500 0,15 PN TN N T a ee ee ee ee ae ee eee ee<br>eeN NJ e e ee Oea eeeeeeee eeeeee ee Ae4 ee ee ee eee<br>2000 EN 0,200,25 aONESE] P<br>0,30 a SSi iSNee ee ee ee cena eeeeeeeeeeeee<br>1500<br>0,40<br>—PSEESAAA Eee<br>0,50<br>1000<br>0,60<br>0,80 SSS EST] Po A<br>500 1,00 ,<br>1,50 Ss SSA AK | PF<br>0 Ee 2,00 eeSSS ST a ee ee ee ee ee eee eee eee<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300<br>T A [°C] ID [A]<br>Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
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Technische Information /<br>technical information<br>Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT420N22P60 GmbH & Co. KG<br>1400<br>1300 0,08 R thCA K/W] W~1C<br>1200 | 44 _ IRMS PTT TTT TTT<br>0,10<br>1100 P N iK rye BERRtT titi ERReete ft tf tt yy<br>0,12<br>1000 Pp AKK ~ Pp ot tt ee<br>900 0,15<br>800 PSRAAO | | SERRE eee<br>0,20<br>700<br>P O N EXANRAIPSNANANrE Et<br>0,25<br>600<br>0,30<br>500 p AR SRA Pot teA<br>PSEA Et<br>0,40<br>400<br>0,50 oS Oe<br>300 0,60 pe SRS Ee<br>TssSSS E e<br>0,80<br>200<br>1,00 — PeSSR Ee<br>100 2,00 SSSR FE<br>0 SS pe<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>TA [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W1C - Einphasen-Wechselwegschaltung / Single-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>4000<br>TXT 0,08 R thCA [K/W] : ~ W3C~ ~ IRMS TH<br>3500 0,10 NU pb ) eee eee ee ye<br>0,12 eee<br>3000 \W N ee ~ ~ ~ SnPoPG0Geen<br>0,15<br>2500 P SRA SSSGe e se<br>SSN\ AA [E] cee<br>0,20<br>2000 P ARSE EEE<br>0,25<br>0,30<br>1500 BSWRNSON OSA NG| 0EOne eee<br>0,40<br>PRESSSRN<br>0,50<br>1000 AES SSA Ee<br>0,600,80 SESSFSSSSSSSA<br>500 1,00<br>2,00 =—|=ESSSSSqUJSS TT_—_—ArIsAVN |ET<br>0 ESS ES<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>T A [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W3C - Dreiphasen-Wechselwegschaltung / Three-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>[W]<br> tot<br>P<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
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## **Technische Information /**
## **technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT420N22P60**
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10000 a SC<br>(EGOO OD SG QQ<br>Eses nD OD ID GO GD(GO iTM =<br>EeGs nD DG OO QO QOGO OO 1000A<br>reeses EDrs rr es GD G nGOe QeQO QODcee<br>a 500A<br>200A<br>eeee ee eee eee<br>100A<br>| 50A<br>1000 eeecs meee ee<br>Ceecs ee ee ee eeGO<br>Ceee iees<br>jpeee————COE Se Re OD I I<br>PF —<br>ooo EEE<br>100<br>1 10 -di/dt [A/µs] 100<br>Q [µAs]r<br>**----- End of picture text -----**<br>
## **Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)**
Tvj = Tvjmax, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM
Parameter: Durchlaßstrom / On-state current iTM
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9.000<br>Po<br>8.000 Es es ee<br>pe eS a ee ee<br>7.000 pee ee<br>6.000 poeeee 4 TA =35°C | | i]<br>ee 7]<br>5.000 [es ee pe<br>es es po<br>4.000 Es es Gn poee e<br>se<br>3.000 SR rs rs On Ot OdQO<br>2.000 eeee ee<br>1.000 Psrs rs nD 0/0<br>b TA<br>0 Poes sn GenFO d reOGeee Iee 45°Crs | ne{|| |tl|<br>0,01 0,1 1<br>t [s]<br>Grenzstrom / Maximum overload on-state current IT(OV)M = f(t), vRM = 0,8 VRRM<br>a: Leerlauf / No-load conditions<br>b: nach Belastung mit ITAVM / after load with ITAVM<br>TA = 35°C, verstärkte Luftkühlung / Forced air cooling<br> [A]<br>IT(OV)M<br>**----- End of picture text -----**<br>
TA = 45°C, Luftselbstkühlung / Natural air cooling
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**Technische Information / technical information**
**Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT420N22P60**
## Nutzungsbedingungen
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes für Ihre Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen.
In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen.
Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Für Interessenten halten wir Application Notes bereit.
Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung.
Sollten Sie beabsichtigen, das Produkt in gesundheits- oder lebensgefährdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle
- die gemeinsame Durchführung eines Risiko- und Qualitätsassessments;
- den Abschluss von speziellen Qualitätssicherungsvereinbarungen;
- die gemeinsame Einführung von Maßnahmen einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen.
Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben.
Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten.
## Terms & Conditions of usage
The product data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the specifications of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you. For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
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Revision: 3.1
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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