# IGBT Module, Three Phase Inverter, 50 A, 2.05 V, 180 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3816937/)

**URL**: https://novapart.co/products/DF120R12W2H3B27BOMA1/igbt-module-three-phase-inverter-50-a-205-v-180-w
**SKU**: DF120R12W2H3B27BOMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €21.5200
**Stock**: 25+
**Lead Time**: 78 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| Product Range | EasyPACK 2B |
| Igbt Technology | IGBT 3 High Speed |
| Igbt Termination | Press Fit |
| Power Dissipation | 180W |
| Igbt Configuration | Three Phase Inverter |
| Transistor Mounting | Panel |
| Dc Collector Current | 50A |
| Power Dissipation Pd | 180W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 50A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Saturation Voltage Vce(On) | 2.05V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3816937/)

IGBT-模块 IGBT-modules DF120R12W2H3_B27 

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VCES = 1200V IC nom = 40A / ICRM = 80A 

## **典型应用** 

- 太阳能应用 

- 

## **电气特性** 

- 

- 低开关损耗 

- 

- 

## **机械特性** 

- 2O3 

- 集成NTC温度传感器 

- 紧凑型设计 

- 

- Al2O3 

- 

- 

- 

1 

IGBT-模块 IGBT-modules DF120R12W2H3_B27 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **反极性保护二极管A�/�Inverse-polarity�protection�diode�A 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|360<br>290|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|650<br>420|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 30 A|VF||0,95||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1200 V|IR||0,10||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||0,80|0,90|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,80||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op||||°C|



## **反极性保护二极管B�/�Inverse-polarity�protection�diode�B 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|30|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|290<br>245|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|420<br>300|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 20 A|VF||1,00||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1200 V|IR||0,10||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,20|1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,15||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op||||°C|



|preparedby:CM|dateofpublication:2013-11-25|
|---|---|
|approvedby:MB|revision:2.0|



2 

## 技术信息�/�Technical�Information 

## IGBT-模块 IGBT-modules DF120R12W2H3_B27 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **IGBT,�斩波器�/�IGBT-Chopper 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>DF120R12W2H3_B27<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MB<br>dateofpublication:2013-11-25<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,斩波器/IGBT-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 75°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>40<br>50<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>80<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150°C<br>Ptot<br>180<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 40 A, VGE= 15 V<br>IC= 40 A, VGE= 15 V<br>IC= 40 A, VGE= 15 V<br>VCE sat<br>2,05<br>2,50<br>2,60<br>2,40<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,185<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,35<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,13<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>td on<br>0,035<br>0,035<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 12Ω<br>tr<br>0,02<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>td off<br>0,23<br>0,29<br>0,31<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 12Ω<br>tf<br>0,02<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 40 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 1800 A/µs (Tvj= 150°C)<br>RGon= 12Ω<br>Eon<br>2,00<br>3,10<br>3,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 40 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4300 V/µs (Tvj= 150°C)<br>RGoff= 12Ω<br>Eoff<br>1,50<br>2,40<br>2,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,55<br>0,70<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,55<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||



3 

IGBT-模块 IGBT-modules DF120R12W2H3_B27 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **Diode-斩波器�/�Diode-Chopper 最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|310|||A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,00<br>1,70<br>1,65|2,55|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1800 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||30,0<br>45,0<br>50,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1800 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,50<br>3,50<br>4,00||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1800 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,70<br>1,75<br>2,15||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||0,70|0,75|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,70||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



## **负温度系数热敏电阻�/�NTC-Thermistor 特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0 

4 

IGBT-模块 IGBT-modules DF120R12W2H3_B27 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

## **初步数据 Preliminary�Data** 

## **模块�/�Module** 

|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||25||nH|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|重量<br>Weight||G||36||g|



Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. 

prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0 

5 

IGBT-模块 IGBT-modules 

## DF120R12W2H3_B27 

## **初步数据** 

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**----- Start of picture text -----**<br>
(typical) (typical)<br>IF =f(V F) IF =f(V F)<br>60 40<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 150°C Tvj = 150°C<br>35<br>50 EI} | ly EJ | oy<br>30<br>40<br>25<br>30 20<br>15<br>20<br>10<br>10<br>5<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>VF [V] VF [V]<br> [A]  [A]<br>IF IF<br>**----- End of picture text -----**<br>


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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>80 80<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>70 Tvj = 150°C 70 VGE = 15V<br>VGE = 13V<br>VGE = 11V<br>60 PT  fe | / ’ 2}ra’ “ 60 E l VGE = 9V ine,/\U v Zeao 4 Z<br>PEL;<br>50 50<br>AUfe | LT /:eef Z<br>40 40<br>30 30<br>PLLAATys, LL ert’ .<br>Z<br>7<br>20 20<br>10 10<br>ey aa eee) [Zane]<br>BP ARR<br>0 0<br>ee ee e dese<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE  [V] VCE  [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


6 

IGBT-模块 IGBT-modules DF120R12W2H3_B27 

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初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE eOV VGE eR Gon Uh Ω ,R Goff =12 Ω ,V CE =600V<br>80 8,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>70 Tvj = 150°C 7,0 Eon, Tvj = 150°C<br>F || E Eoff, Tvj = 150°C Lilly<br>7 T T /<br>60 Pa a 2 6,0 ee e<br>50 BRRae e 5,0 e e7 ae<br>eK Le¥<br>40 4,0<br>PP Kg) Leeee<br>30 3,0<br>20 Bae Ane eee 2,0 cane<br>Pty<br>10 | | 1,0 Lee<br>et<br>0 : | | | | 0,0 Oe<br>5 6 7 8 9 10 11 12 0 8 16 24 32 40 48 56 64 72 80<br>VGE  [V] IC [V]<br>FFHAK IGBT, HIRE ( 2B) IAAI IGBT, SES<br>switching losses IGBT-Chopper (typical) transient thermal impedance IGBT-Chopper<br>Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =40A,V CE =600V<br>12,0 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>10,0 FBO— Eoff —1 , Tvj = 150°C } | | LeeoA“a [SESS oooaYT SS TT or TTTtTTT TTT]<br>8,0 1<br>a e e |<br>a<br>YT TTT<br>Sf ee |<br>6,0<br>Pr<br>WA a CI ETT<br>PLATE<br>4,0 ZL 0,1 ETM EEN<br>este tie dd ee<br>a eee<br>a<br>YT [TT] Ttee ee |<br>SZaneea e Ee IE LIM ETM | E l<br>2,0<br>i:    1    2    3    4<br>ri[K/W]:   0,051    0,117   0,426   0,506<br>τ i[s]:    0,0005   0,005   0,05    0,2<br>LLL EEE TAAtteUU |fmo eyoo l<br>0,0 0,01<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IC E [mJ]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>


7 

IGBT-模块 IGBT-modules 

## DF120R12W2H3_B27 

## **初步数据** 

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IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =12 Ω ,T vj =150°C<br>100 50<br>IC, Modul Tvj = 25°C<br>90 F IC, Chip J] 45 Tvj = 125°C pe<br>| a Tvj = 150°C<br>80 mT) 40 a es<br>70 35<br>ef | | tt De<br>ee ee<br>po ee ee ee ee ee<br>60 30<br>eeee<br>ee ee ee ee ee ee<br>50 25<br>40 a ee ee 20 e ae eeeeeeee Peee ee oeeeeee eeee<br>30 ee 15 oe<br>a ee eeee<br>20 10<br>eee eee<br>ee Po YP<br>10 5<br>ee es A ee<br>0 0 a a ee ee ee ee<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VF [V]<br>FFRIRE Diode-HiK#s ( #22!) FFHIRE Diode-iKzZs ( #2)<br>switching losses Diode-Chopper (typical) switching losses Diode-Chopper (typical)<br>Erec =f (I F) Erec =f(R G)<br>RGon =12 Ω ,V CE =600V IF =25A,V CE =600V<br>3,00 EE 3,00 a|<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>2,50 2,50<br>2,00 2,00<br>fal Za N ><br>1,50 1,50<br>1,00 Lo 1,00 IN : 4.<br>0,50 0,50<br>0,00 0,00<br>0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120<br>IF [A] RG [ Ω ]<br> [A]  [A]<br>IC IF<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


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IGBT-模块 IGBT-modules 

## DF120R12W2H3_B27 

## **初步数据** 

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## 技术信息�/�Technical�Information 

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IGBT-模块<br>IGBT-modules DF120R12W2H3_B27<br>**----- End of picture text -----**<br>


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prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0 

10 

IGBT-模块 IGBT-modules 

## DF120R12W2H3_B27 

## **初步数据** 

## **使用条件和条款** 

使用条件和条款 

产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 

产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 

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11 



## Links

- [View this product on Novapart](https://novapart.co/products/DF120R12W2H3B27BOMA1/igbt-module-three-phase-inverter-50-a-205-v-180-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/df120r12w2h3b27boma1/igbt-module-1-2kv-50a-180w/dp/3816937)
---

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