BTS282ZE3180AATMA2

Power MOSFET, N Channel, 49 V, 80 A, 5800 µohm, TO-263 (D2PAK), Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:49V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Volta; Available until stocks are exhausted
MSL: MSL 1 - Unlimited
SVHC: No SVHC (21-Jan-2025)
No. of Pins: 7Pins
Channel Type: N Channel
Product Range: TEMPFET
Qualification: AEC-Q101
Power Dissipation: 300W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 49V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 80A
Drain Source On State Resistance: 5800µohm
Gate Source Threshold Voltage Max: 1.6V

Delivery and price
Units per pack	100
Price	3.12 €
Current stock	10+
Lead time	30 days

Datasheet

**Speed TEMPFET BTS282Z** 

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S/RoHS Kee<br>**----- End of picture text -----**<br>


**®** 

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JSG@ ; y ZA y<br>1<br>PF SK<br>7<br>PG-TO263-7-1 PG-TO220-7-12<br>**----- End of picture text -----**<br>


- Green Product (RoHS compliant) 

- AEC Qualified 

|E3180A<br>~~| ~~|_V_DS<br> ~~_[Fosin ~~|_V_DS<br> ~~_[Fosin ~~|G<br>63-7-1<br> ~~[Package ~~|~~|~~|~~|~~|
|---|---|---|---|---|---|
|E3230|||G<br>20|2||



Data Sheet 

1 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

|Maximum Ratings||||
|---|---|---|---|
|Parameter<br>~~__=20~~||~~*~~|Unit<br>f|
|Drain source voltage<br>~~__=208~~|_V_DS<br>~~|~~<br>~~a~~|~~|~~<br>~~*~~<br>~~ee~~|f|
|Drain-gate voltage _R_GS<br>k<br>~~__=20~~ ~~8~~|_V_DGR<br>~~a~~|~~*~~<br>~~ee~~||
|Gate source voltage<br> ~~8~~|_V_GS<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~||
|_V_GS<br>_T_C<br>_V_GS<br>_T_C<br>Nominal load current (ISO 10483)<br>=45V,VpsS05V,<br>=85°C<br>=10V,Vps <0.5V,<br>=85°C<br>~~=100°C,Veg=4.5V~~<br>~~bh~~|IpD(1s0)<br>~~bh|~~|36<br>52<br>~~|~~|A|
|_T_C<br>Continuous drain current 1)<br>~~=100°C,Veg=4.5V~~<br>~~bh~~|Ip<br>~~bh|~~|~~|~~||
|~~= 100 °C, Veg = 4.5V~~<br>~~bh~~<br>Pulsed drain current|~~bh |~~|~~|~~||
|_R_GS<br>Avalanche energy, single pulse|Ens|2|J|
|<br>_T_C<br>Power dissipation<br>~~Operatingtemperature2)~~|_P_tot<br>~~P|]~~|300<br>~~P|]4075~~|W<br>°C|
|~~Operatingtemperature2)~~|_T_j<br>~~P|]~~|~~P|]4075~~|°C|
|~~Operating temperature 2)~~<br>~~Peaktemperature(singleevent)~~|j<br>~~P|]~~<br>~~|B.~~|~~P|] 4075 ~~<br>~~|B.50~~||
|Storage temperature<br>~~Peaktemperature(singleevent)~~|_T_stg<br>~~|B.~~|~~|B.50~~||
|DIN humiditycategory, DIN 40 040<br>~~Peak temperature ( single event )~~<br>~~IECclimaticcategory;DINIEC68-1~~<br>~~|~~|stg<br>~~|B.~~<br>~~ee~~<br>~~|~~<br>~~|~~|~~|B. 50~~<br>~~ee~~<br>~~4ot50/56~~||
|~~IECclimaticcategory;DINIEC68-1~~<br>~~|~~|~~|~~<br>~~|~~|~~4ot50/56~~||



Data Sheet 

2 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

_R_ ~~Pf~~ thJC ~~|e | 8 |~~ K/W 

|Parameter<br>~~at 7, = 25°C, unless otherwise specified~~<br>~~Smee~~<br>Static Characteristics|Symbol<br>~~Smee~~|~~ema~~|~~ema~~|~~ema~~|Unit|
|---|---|---|---|---|---|
|Drain-source breakdown voltage<br>_V_GS|_V_(BR)DSS||||V|
|<br>_V_GS<br>_V_DS<br>Gate threshold voltage,<br>=<br>Ip = 240 pA||||||
|_V_DS<br>_V_GS<br>_T_j<br>_V_DS<br>_V_GS<br>_T_j<br>_V_DS<br>_V_GS<br>_T_j<br>Zero gate voltage drain current<br>=45V,<br>=OV,<br>=-40°C<br>=45V,<br>=OV,<br>=25°C<br>=45V,<br>=OV,<br>=150°C|pss||-<br>0.1<br>-|0.1<br>1<br>100|UA|
|_V_GS<br>_V_DS<br>_T_j<br>_V_GS<br>_V_DS<br>_T_j<br>Gate-source leakage current<br>=20V,<br>=OV,<br>=25°C<br>=20V,<br>=OV,<br>=150°C|Iess||10<br>20|100<br>100|nA|
|_V_GS<br>_V_GS<br>Drain-Source on-state resistance<br>=45V, lp =36A<br>=10V, Ip =36A|Rpsvon)||8.2<br>5.8|9.5<br>6.5|mQ|



Data Sheet 

3 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

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|||||||||
|---|---|---|---|---|---|---|---|
|g|fs|
|V|
|Forward transconductance|DS|>2"lp“Rps(on)max|>|/p|=|80 A|
|Input capacitance|C|iss|
|V|V|f|
|GS|DS|
|Output capacitance|C|oss|
|V|V|f|
|GS|DS|
|Reverse transfer capacitance|C|rss|
|V|V|f|
|GS|DS|
|Turn-on delay time|t|
|d(on)|
|V|V|
|DD|=|30 V,|GS|=|4.5 V,|Ip|=80A,|
|R|G|=1.3Q|
|Rise time|t|r|
|V|V|
|DD|=|30 V,|GS|=|4.5 V,|Ip|=80A,|
|R|G|=1.3Q|
|Turn-off delay time|t|
|d(off)|
|V|V|
|DD|=|30 V,|GS|=|4.5 V,|Ip|=80A,|
|R|G|=1.3Q|
|Fall time|t|f|
|V|V|
|DD|=|30 V,|GS|=|4.5 V,|Ip|=80A,|
|R|G|=1.3Q|

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|V|DD|=40V,ID|≥|0,1A,|V|GS|
|Gate|charge|at|threshold|
|V|V|
|DD|=|40 V,|Ip|=|80A,|GS|
|Gate|charge|at|5.0|V|
|V|DD|=|40|V,|Ip|=|80A,|V|GS|
|Gate|charge|total|

**----- End of picture text -----**<br>


_V_ DD 

Data Sheet 

Rev.1.3, 2013-07-26 

4 

**Speed TEMPFET BTS282Z** 

|_T_C<br>mn||~~ee~~|
|---|---|---|
|Inverse diode direct current,pulsed||lem|
|_T_C<br>= 25°C|||
|Inverse diode forward voltage||Vsp|
|_V_GS<br>_I_F|||
|Reverse recovery time||_t_rr|
|_V_R<br>_I_F<br>d_i_F/d_t_|||
|Reverse recovery charge||_Q_rr|
|_V_R<br>_I_F<br>d_i_F/d_t_<br>=30V,<br>=!Is,|=100A/us||



|_T_j<br>Forward voltage<br>Ink(on)<br>=<br>9 MA,<br>IAK(on) = 1.5MA,|_T_j<br>=|
|---|---|
|Sensor override||
|_T_j||
|_T_j<br>Forward current<br>= -40...+150 °C||
|Sensor override||
|_T_j||



Data Sheet 

Rev.1.3, 2013-07-26 

5 

**Speed TEMPFET BTS282Z** 

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T = 150 °C<br>Temperature j sensor leakage current<br>Min. reset pulse duration 1)<br>T<br>j = -40...+150 °C, Iak(on) = 0.3 mA,<br>VAK(Reset)<0-5V<br>T Vax j = -40...+150 Recovery timet)2) °C, Ink(on) = 0.3 MA<br>**----- End of picture text -----**<br>


_T_ j _T_ j 

Data Sheet 

6 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

Data Sheet 

Rev.1.3, 2013-07-26 

7 

**Speed TEMPFET BTS282Z** 

## **S** 

Data Sheet 

8 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

Data Sheet 

9 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

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GS<br>V<br>**----- End of picture text -----**<br>


Data Sheet 

10 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

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## **Package Outlines** 

## **1 Package Outlines** 

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4.4<br>10 ±0.2 1.27±0.1<br>0...0.3<br>A B<br>1)<br>8.5<br>0.05<br>2.4<br>0.1<br>0...0.15<br>7x 0.6±0.1<br>6x 1.27<br>0.25 M A B<br>0.1 B<br>1) Typical<br>Metal surface min. X = 7.25, Y = 6.9<br>All metal surfaces tin plated, except area of cut.<br>PG-TO263-7-1-PO   V01<br>Figure 1 PG-TO263-7-1<br>10 ±0.2<br>A B<br>9.9 [±0.2] 4.4<br>1)<br>8.5 1.27 ±0.1<br>0...0.3<br>0.05<br>2.4<br>C<br>0...0.15 0.5 [±0.1]<br>7 x 0.6 [±0.1] 2.4<br>6 x 1.27<br>0.25 [M] A B C<br>1) Typical<br>Metal surface min. X = 7.25, Y = 12.3<br>All metal surfaces tin plated, except area of cut.<br>0.5±0.1<br>8° MAX.<br>±0.3<br>1<br>) ±0.2 1) ±0.3<br>7.55<br>(15 2.7<br>9.25<br>±0.5<br>4.7<br>±0.3 1)<br>±0.3 ±0.2 -0.15<br>17 15.65 12.95 2.8 3.7  ±0.2<br>9.25<br>±0.5  ±0.5<br>11<br>13<br>**----- End of picture text -----**<br>


**Figure 2 PG-TO220-7-12** 

Data Sheet 

11 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

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## **Package Outlines** 

## **Green Product (RoHS compliant)** 

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). 

For further information on alternative packages, please visit our website: **http://www.infineon.com/packages** . 

Dimensions in mm 

Data Sheet 

12 

Rev.1.3, 2013-07-26 

**Speed TEMPFET BTS282Z** 

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## **Revision History** 

## **2 Revision History** 

|**Revision**|**Date**|**Changes**|
|---|---|---|
|1.3|2013-07-26|page 1, 11: updated package name and package drawing:<br>PG-TO220-7-180 to PG-TO263-7-1 (SMD)<br>PG-TO220-7-230 to PG-TO220-7-12 (THD, straight leads);<br>page 1, 11/12: removed package PG-TO220-7-3 (THD, staggered leads);<br>page 1: added sales names for the different packages;<br>page 8: updated description figure 5|
|1.2|2009-07-31|removed 100ms and DC line in SOA diagram|
|1.1|2008-10-21|all pages:<br>added new Infineon logo Creation of the green datasheet.<br>Initial version of RoHS-compliant derivate of the BTS282Z<br>Page 1 and 12: added RoHS compliance statement and Green product feature<br>Page 1, 11 and 12: Package changed to RoHS compliant version<br>page 13: added Revision history<br>page 14: added Disclaimer|



Data Sheet 

13 

Rev.1.3, 2013-07-26 

## **Edition 2013-07-26** 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Updated at March 10, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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