![DF100R07W1H5FPB53BPSA2 — IGBT Module, Dual [Half Bridge], 50 A, 1.35 V, 150 °C, Module](/media/0/2/9/76D8164ED0EA0920.webp)
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DF100R07W1H5FPB53BPSA2
IGBT Module, Dual [Half Bridge], 50 A, 1.35 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK TRENCHSTOP
- IGBT Technology: Trench Stop 5 H5/ CoolSiC
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 50A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.35V
- Collector Emitter Saturation Voltage Vce(on): 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 23.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## DF100R07W1H5FP_B53 **==> picture [111 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>°<br>VCES = 650V<br>IC nom = 50A / ICRM = 100A<br>**----- End of picture text -----**<br> - - - - - - Al2O3 Substrat mit kleinem thermischen Widerstand - - - Thermisches Interface Material bereits aufgetragen - - - - - - Al2O3 - - - **Digit** Datasheet www.infineon.com 2017-04-06 DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** |**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||| |---|---|---|---|---|---|---| |Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|650|||V| |ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|50|||A| |Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 100°C, Tvj max= 175°C<br>TH= 25°C, Tvj max= 175°C|IC nom<br>IC|25<br>40|||A<br>A| |PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A| |Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,35<br>1,40<br>1,45|1,55|V<br>V<br>V| |Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|3,25|4,00|4,75|V| |Gateladung<br>Gatecharge|VGE= -15 V ... +15 V, VCE= 400V|QG||0,235||µC| |InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω| |Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,80||nF| |Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,013||nF| |Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 650 V, VGE= 0 V, Tvj= 25°C|ICES||0,04||mA| |Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA| |Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,009<br>0,01<br>0,012||µs<br>µs<br>µs| |Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,0036<br>0,004<br>0,005||µs<br>µs<br>µs| |Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,008<br>0,009<br>0,01||µs<br>µs<br>µs| |Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,022<br>0,028<br>0,03||µs<br>µs<br>µs| |EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 4200 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,11<br>0,23<br>0,25||mJ<br>mJ<br>mJ| |AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 7500 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||0,15<br>0,17<br>0,21||mJ<br>mJ<br>mJ| |Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||250||A| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||1,60|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 2 V�3.0 2017-04-06 Datasheet DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V| |---|---|---|---|---|---|---| |ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|30|||A| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||2,44|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�Hochsetzsteller�/�Diode,�Boost** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|40,5|||A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,60<br>1,65|1,85|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||10,5<br>10,0<br>10,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,012<br>0,0125<br>0,013||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 4200 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,04<br>0,0405<br>0,041||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||1,50|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| 3 V�3.0 2017-04-06 Datasheet DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** ## **NTC-Widerstand�/�NTC-Thermistor** |**NTC-Widerstand/NTC-Thermistor**|**NTC-Widerstand/NTC-Thermistor**|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N| |Gewicht<br>Weight||G||24||g| Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 V�3.0 2017-04-06 Datasheet 4 DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** ## **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **==> picture [237 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj = 150°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **==> picture [237 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj = 150°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [237 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>VGE = 7 V<br>VGE = 9 V<br>45 V GE = 11 V<br>VGE = 15 V<br>VGE = 17 V<br>40 V GE = 19 V<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> ## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�5.1� Ω ,�RGoff�=�5.1� Ω ,�VCE�=�400�V **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 0,6<br>Eon, Tvj = 125°C<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>0,5<br>0,4<br>0,3<br>0,2<br>0,1<br>0,0<br>0 5 10 15 20 25 30 35 40 45 50<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br> V�3.0 2017-04-06 Datasheet 5 DF100R07W1H5FP_B53 **==> picture [485 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l)t=f(l),t C r C doff =f(l),t C f =f(l C)<br>VGE =415V,1 C =25A,V CE =400V VGE =415V,R Gon =51 Ω ,R Goff =51 Ω ,V CE =400V, T vj =150°C<br>1,2 1000<br>1,1 E E on on , T , T vj vj = 125°C = 150 ° C ttdon r<br>Eoff, Tvj = 125°C t doff<br>Eoff, Tvj = 150°C t f<br>1,0<br>0,9<br>0,8 100<br>0,7<br>0,6<br>0,5<br>0,4 10<br>0,3 EP4eeeeeeee oe<br>y ee<br>0,2<br>0,1<br>0,0 1<br>0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) Transienter Warmewiderstand IGBT,Wechselrichter<br>switching times IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>tdon =f(R),t=f(R),t G r G doff =f(R)t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =415V,1 C =25A,V CE =400V, T vj = 150°C<br>1000 —_—_———— 10 ee<br>tdon ZthJH : IGBT<br>H|| tt rdoff aaEt I—__—ss—si'/|<br>t f<br>100<br>eet<br>——— EE) | COIN oT<br>ie mal<br>1<br>Oo“ 4:<br>10 |)<br>SS VA<br>i: 1 2 3 4<br>ri[K/W]: 0,0896 0,1054 0,3424 1,0626<br>τ i[s]: 0,000342 0,003454 0,018 0,09605<br>1 0,1<br>CEECE ee) ll]<br>0 5 10 15 20 25 30 35 40 45 50 55 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>E [mJ] t [ns]<br> [K/W]<br>t [ns]<br>thJH<br>Z<br>**----- End of picture text -----**<br> 6 Datasheet 2017-04-06 DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** ## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,Wechselrichter (RBSOA) reverse�bias�safe�operating�area�IGBT,Inverter�(RBSOA)** IC�=�f�(VCE) ## **Kapazitäts�Charakteristik�IGBT,Wechselrichter�(typisch) capacity�charcteristic�IGBT,Inverter�(typical)** C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�1MHz **==> picture [137 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> VGE�=�±15�V,�RGoff�=�5.1� Ω ,�Tvj�=�150°C<br>**----- End of picture text -----**<br> **==> picture [238 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>IC, Modul<br>110 IC, Chip<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> **==> picture [236 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>C ies<br>Coes<br>C res<br>10<br>1<br>0,1<br>0,01<br>0,001<br>0 5 10 15 20 25 30<br>VCE [V]<br>C [nF]<br>**----- End of picture text -----**<br> **Gateladungs�Charakteristik�IGBT,Wechselrichter�(typisch) gate�charge�characteristic�IGBT,Inverter�(typical)** VGE�=�f(QG) IC�=�25�A,�Tvj�=�25°C **Durchlasskennlinie�der�Diode,�Wechselrichter�(typisch) forward�characteristic�of�Diode,�Inverter�(typical)** IF�=�f�(VF) **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 15 60<br>VCC = 400 V Tvj = 25 °C<br>Tvj = 125 °C<br>12 Tvj = 150 °C<br>50<br>9<br>6<br>40<br>3<br>0 30<br>-3<br>20<br>-6<br>-9<br>10<br>-12<br>-15 0<br>0 30 60 90 120 150 180 210 240 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>QG [nC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br> V�3.0 2017-04-06 Datasheet 7 DF100R07W1H5FP_B53 **==> picture [486 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJH =f (t) IF =f(V F)<br>10 pot TE 60 /<br>ZthJH : Diode Tvj = 25 °C<br>[— | Tvj = 125 °C i /<br>Tvj = 150 °C /// /<br>/<br>50<br>//<br>//<br>i<br>et ll 40 hy/i<br>//<br>/i<br>1 30 yy<br>/1<br>/<br>VA /<br>20<br>10<br>i: 1 2 3 4<br>ri[K/W]: 0,2138 0,6081 1,2543 0,3638<br>τ i[s]: 0,0004165 0,009878 0,07189 0,6098<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br> **==> picture [493 x 310] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f il F) Erec =f(R G)<br>RGon =5.1 Ω ,V CE =400V IF =30A,V CE =400V<br>0,0600 0,0500<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>0,0500<br>F — 0,0400 c ALLL.<br>DH<br>Va<br>V4<br>V4<br>0,0400<br>0,0300<br>0,0300<br>0,0200<br>0,0200<br>0,0100<br>0,0100<br>0,0000 0,0000<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> 8 Datasheet 2017-04-06 DF100R07W1H5FP_B53 ZthJH **==> picture [485 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 10 100000<br>ZthJH : Diode Rtyp<br>10000<br>a<br>Ul TTT ——<br>1 \<br>eevieSeeel Ne<br>mE at TT<br>1000<br>} ee ee ee ee<br>i: 1 2 3 4<br>ri[K/W]: 0,1429 0,265 0,366 0,7261<br>τ i[s]: 0,000433 0,002797 0,01671 0,1058<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br> 9 Datasheet 2017-04-06 DF100R07W1H5FP_B53 **==> picture [86 x 38] intentionally omitted <==** ## 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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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