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ETT540N22P60HPSA1
Thyristor Diode Module, Series Connected, 540A, 2.2kV, 2.2 V, Single Gate
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- Manufacturer: INFINEON
- Product type: Thyristors - SCR Modules
- SCR Module Type:Series Connected - SCRs; Peak Repetitive Off-State Voltage, Vdrm:2.2kV; Gate Trigger Current Max, Igt:250mA; Current It av:542A; On State RMS Current IT(rms):700A; Peak Non
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Product Range: -
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- On State RMS Current: 700A
- Thyristor Case Style: Module
- Average Forward Current: 542A
- Gate Trigger Current Max: 250mA
- Gate Trigger Voltage Max: 2.2V
- Operating Temperature Max: 135°C
- Repetitive Peak Reverse Voltage: 2.2kV
- Peak Repetitive Off State Voltage: 2.2kV
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 176.88 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Technische Information / technical information** ## **Netz-Thyristor-Modul Phase Control Thyristor Module** ## **eTT540N22P60** ## **Key Parameters** VDRM / VRRM 2200V ITAVM 542A (TC=85°C) ITSM 16300A VT0 0,85V rT 0,425mΩ RthJC 0,0625K/W Base plate 60mm For type designation please refer to actual short form catalog http://www.ifbip.com/catalog ## **Merkmale** - Druckkontakt-Technologie für hohe Zuverlässigkeit - Advanced Medium Power Technology (AMPT) - Industrie-Standard-Gehäuse - Elektrisch isolierte Bodenplatte ## **Features** - Pressure contact technology for high reliability - Advanced Medium Power Technology (AMPT) - Industrial standard package - Electrically insulated base plate ## **Typische Anwendungen** - Sanftanlasser - Gleichrichter für Antriebsapplikationen - Kurzschließer-Applikationen - Leistungssteller - Gleichrichter für UPS - Batterieladegleichrichter - Statische Umschalter - Bypass-Schalter ## **Typical Applications** - Soft starter - Rectifier for drives applications - Crowbar applications - Power controllers - Rectifiers for UBS - Battery chargers - Static switches - Bypass swich ~~FS~~ ~~**e** ||~~ content of customer DMX code DMX code DMX code digit digit quantity **TT TD** ~~a~~ serial number 1..5 5 ~~a~~ SAP material number 6..12 7 ~~a~~ Internal production order number 13..20 8 ~~a~~ datecode (production year) 21..22 2 ~~ee~~ www.ifbip.com ~~Pf~~ datecode (production week) 23..24 2 ~~a~~ support@infineon-bip.com 1/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 ## **Technische Information / technical information** ## **Netz-Thyristor-Modul** ## **Phase Control Thyristor Module** ## **eTT540N22P60** **eTT540N22P60** **eTD540N22P60** ||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon| |---|---|---|---|---|---| |**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT540N22P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG|| |**Elektrische Eigenschaften / Electrical properties**<br>HöchstzulässigeWerte /Maximum ratedvalues<br>**eTT540N22P60**<br>**eTD540N22P60**<br>Periodische Vorwärts- und Rückwärts-Spitzensperrspannung<br>repetitive peak forward off-state and reverse voltages<br>Tvj= -40°C... Tvj max<br>VDRM,VRRM <br>2200<br>V<br>Vorwärts-Stoßspitzensperrspannung<br>non-repetitive peak forward off-state voltage<br>Tvj= -40°C... Tvj max<br>VDSM<br>2200<br>V<br>Rückwärts-Stoßspitzensperrspannung<br>non-repetitive peak reverse voltage<br>Tvj= +25°C... Tvj max<br>VRSM<br>2300<br>V<br>Durchlaßstrom-Grenzeffektivwert<br>maximum RMS on-state current<br>ITRMSM<br>700 A<br>Dauergrenzstrom<br>average on-state current<br>TC= 85°C<br>ITAVM<br>542<br>A<br>Stoßstrom-Grenzwert<br>surge current<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>ITSM<br>16300<br>13300<br>A<br>A<br>Grenzlastintegral<br>I²t-value<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>I²t<br>1328450<br>884450<br>A²s<br>A²s<br>Kritische Stromsteilheit<br>critical rate of rise of on-state current<br>DIN IEC 747-6<br>f = 50Hz, iGM= 1A, diG/dt = 1A/µs<br>(diT/dt)cr<br>150 A/µs<br>Kritische Spannungssteilheit<br>critical rate of rise of off-state voltage<br>Tvj= Tvj max, vD= 0,67 VDRM<br>(dvD/dt)cr<br>1000<br>V/µs<br>CharakteristischeWerte / Characteristicvalues<br>Durchlaßspannung<br>on-state voltage<br>Tvj= Tvj max, iT= 1700 A<br>vT<br>max.<br>1,73<br>V<br>Schleusenspannung<br>threshold voltage<br>Tvj= Tvj max<br>V(TO)<br>max.<br>0,85 V<br>Ersatzwiderstand<br>slope resistance<br>Tvj= Tvj max<br>rT<br>max. 0,425 mΩ<br>Zündstrom<br>gate trigger current<br>Tvj= 25°C, vD= 12V<br>IGT<br>max.<br>250 mA<br>Zündspannung<br>gate trigger voltage<br>Tvj= 25°C, vD= 12V<br>VGT<br>max.<br>2,2 V<br>Nicht zündender Steuerstrom<br>gate non-trigger current<br>Tvj= Tvj max, vD= 12V<br>Tvj= Tvj max, vD= 0,5 VDRM<br>IGD<br>max.<br>max.<br>10<br>5<br>mA<br>mA<br>Nicht zündende Steuerspannung<br>gate non-trigger voltage<br>Tvj= Tvj max, vD= 0,5 VDRM<br>VGD<br>max.<br>0,25 V<br>Haltestrom<br>holding current<br>Tvj= 25°C, vD= 12V, RA= 1Ω<br>IH<br>max.<br>300 mA<br>Einraststrom<br>latching current<br>Tvj= 25°C, vD= 12V, RGK≥ 10Ω<br>iGM= 1A, diG/dt = 1A/µs, tg= 20µs<br>IL<br>max.<br>1500 mA<br>Vorwärts- und Rückwärts-Sperrstrom<br>forward off-state and reverse current<br>Tvj= Tvj max<br>vD= VDRM, vR= VRRM<br>iD, iR<br>max.<br>100 mA<br>Zündverzug<br>gate controlled delay time<br>DIN IEC 747-6<br>Tvj= 25°C, iGM= 1A, diG/dt = 1A/µs<br>tgd<br>max.<br>4 µs<br>prepared by: AG<br>date of publication: 2018-07-30<br>approved by: ML<br>revision:<br>3.1|||||| |Date of Publication 2018-07-30||Revision: 3.1|Seite/page||2/11| 2/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 ## **Technische Information / technical information** ||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon| |---|---|---|---|---|---| |**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT540N22P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG|| |ThermischeEigenschaften<br>Mechanische Eigenschaften<br>**Elektrische Eigenschaften / Electrical properties**<br>Charakteristische Werte / Characteristic values<br>Freiwerdezeit<br>circuit commutated turn-off time<br>Tvj= Tvj max, iTM= ITAVM<br>vRM= 100 V, vDM= 0,67 VDRM<br>dvD/dt = 20 V/µs, -diT/dt = 10 A/µs<br>5.Kennbuchstabe / 5thletter O<br>tq<br>typ.<br>350<br>µs<br>Isolations-Prüfspannung<br>insulation test voltage<br>RMS, f = 50 Hz, t = 1min<br>RMS, f = 50 Hz, t = 1sec<br>VISOL<br>3,0<br>3,6<br>kV<br>kV<br>**Thermische Eigenschaften / Thermal properties**<br>Innerer Wärmewiderstand<br>thermal resistance, junction to case<br>pro Modul / per Module, Θ = 180° sin<br>pro Zweig / per arm, Θ = 180° sin<br>pro Modul / per Module, DC<br>pro Zweig / per arm, DC<br>RthJC<br>max.<br>max.<br>max.<br>max.<br>0,0325<br>0,065<br>0,03125<br>0,0625<br>K/W<br>K/W<br>K/W<br>K/W<br>Übergangs-Wärmewiderstand<br>thermal resistance, case to heatsink<br>pro Modul / per Module<br>pro Zweig / per arm<br>RthCH<br>typ.<br>typ.<br>0,015<br>0,03<br>K/W<br>K/W<br>Höchstzulässige Sperrschichttemperatur<br>maximum junction temperature<br>Tvj max<br>135 °C<br>Betriebstemperatur<br>operating temperature<br>Tc op<br>-40...+135 °C<br>Lagertemperatur<br>storage temperature<br>Tstg<br>-40...+135 °C<br>**Mechanische Eigenschaften / Mechanicalproperties**<br>Gehäuse, siehe Anlage<br>case, see annex<br>Seite 4<br>page 4<br>Si-Element mit Druckkontakt<br>Si-pellet with pressure contact<br>Innere Isolation<br>internal insulation<br>Basisisolierung (Schutzklasse 1, EN61140)<br>Basic insulation (class 1, IEC61140)<br>AlN<br>Anzugsdrehmoment für mechanische Anschlüsse<br>mounting torque<br>Toleranz / Tolerance ± 15%<br>M1<br>6<br>Nm<br>Anzugsdrehmoment für elektrische Anschlüsse<br>terminal connection torque<br>Toleranz / Tolerance ± 10%<br>M2<br>12<br>Nm<br>Steueranschlüsse<br>control terminals<br>DIN 46 244<br>A 2,8 x 0,8<br>Gewicht<br>weight<br>G<br>typ.<br>830 g<br>Kriechstrecke<br>creepage distance<br>19 mm<br>Schwingfestigkeit<br>vibration resistance<br>f = 50 Hz<br>50 m/s²<br>file-No.<br>E 83335|||||| |Date of Publication 2018-07-30||Revision: 3.1|Seite/page||3/11| 3/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **Technische Information / technical information** d **Netz-Thyristor-Modul Phase Control Thyristor Module** ## **eTT540N22P60** **==> picture [307 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> screwing depth max.18<br>! ! , !<br>1<br> 6.5±0.2<br>(44) 50±0.5 44±0.5<br>M10<br>13±0.5<br>| 1 } i 30±1 > 1<br>1 Tl, ! | ;<br>! . |<br>25±0.3 25±0.3<br>112±0.3<br>124±0.5 base plate<br>| 127.5±1.5 1<br>145.6 [+2] -1<br>1 2 3 1 2 3<br>4 5 7 6 4 5<br>TT TD<br>52±1<br>10±0.2<br>latep 36±1<br>48±0.3 36±1 28±0.3 64±1.5<br>60±0.5 base<br>**----- End of picture text -----**<br> **==> picture [37 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> plug A 2.8x0.8<br>**----- End of picture text -----**<br> 4/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **Technische Information / technical information** ## **Netz-Thyristor-Modul Phase Control Thyristor Module** a ## **eTT540N22P60** **Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC Analytical elements of transient thermal impedance ZthJC for DC** |**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT540N22P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG| |---|---|---|---|---|---|---|---| |**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DCthJC für DC für DC**<br>**Analytical elements of transient thermal impedance ZthJC for DCthJC for DC for DC**|||||||| |Pos. n|1|2|3|4|5|6|7| |Rthn[K/W]|0,016|0,0159|0,02255|0,00811|||| |τn[s]|5,6|2,56939|0,8|0,00165|||| |Analytische Funktion / Analytical function:<br><br><br>~~~~<br>max<br>n<br>n=1<br>thn<br>thJC<br>n<br>– t<br>- e<br>1<br>R<br>Z|||||||| **Erhöhung des Zth DC bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ Rise of Zth DC for sinewave and rectangular current with different current conduction angles Θ ΔZth Θ rec / ΔZth Θ sin** ||Θ = 180°|Θ = 120°|Θ = 90°|Θ = 60°|Θ = 30°| |---|---|---|---|---|---| |ΔZth Θ rec<br>[K/W]|0,00826|0,01604|0,02304|0,03444|0,05413| |ΔZth Θ sin<br>[K/W]|0,00252|0,00570|0,01103|0,02158|0,04360| Zth Θ rec = Zth DC + Zth Θ rec Zth Θ sin = Zth DC + Zth Θ sin 5/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 ## **Technische Information / technical information** **Diagramme Netz-Thyristor-Modul Phase Control Thyristor Module** ## **eTT540N22P60** **==> picture [491 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 0,070 apoa a OOppOQ OOCCOG<br>popp<br>pope<br>0,060 a ee se esee<br>po eg<br>poeTT<br>po A<br>po<br>0,050 Esa a aa sOOCOO>, GOOOOCG O OOO<br>poee<br>po<br>po<br>0,040 Po<br>po<br>poe<br>poa<br>po<br>0,030 (RRpoGOO)”GG OOO lS GGOO<br>poae<br>poae<br>poe<br>0,020 PoapoOGa GG GG<br>pore<br>(a OeOOee<br>0,010 (OeJeeOOOe OGOO GG [OG] OO<br>po<br>po<br>po<br>0,000 ER OO GO GCCOOG<br>0,01 0,1 t [s] 1 10 100<br> [K/W]<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> **==> picture [496 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)<br>Durchgangsverluste<br>Parameter: Stromflußwinkel Θ / Current conduction angle Θ<br>100<br>_————_—_—_——__eS —_—_e_e_—=Q~S_E___<br>ee<br>a aCS GS<br>po<br>po<br>eeeeeee<br>10 eea C—Oe e SSoe ieee c<br>b<br>a a a a ee a NS SS<br>a a a ee ee ee ae a<br>eees eeOQ cet et<br>Pes Can ee [eee]<br>1<br>nee ace O00 ee<br>era ee ai a ceaCC<br>— oe eee eee A fT<br>—————ASS SSS.a eeeaeee eeeeeee ee eeee eeee e<br>0,1<br>10 100 iG [mA] 1000 10000<br> [V]<br>G<br>v<br> =<br> =vj Tvj<br>= T<br>vj<br>T<br>**----- End of picture text -----**<br> **==> picture [270 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Steuercharakteristik vG = f (iG) mit Zündbereichen für VD = 12 V<br>Gate characteristic vG = f (iG) with triggering area for VD = 12 V<br>**----- End of picture text -----**<br> **==> picture [419 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) :<br>**----- End of picture text -----**<br> a - 20W/10ms b - 40W/1ms c - 60W/0,5ms 6/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **==> picture [146 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Technische Information /<br>**----- End of picture text -----**<br> ## **technical information** **==> picture [511 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT540N22P60 GmbH & Co. KG<br>a “ec mbH 8 Co<br>900<br>800 eenn eeeeeH+ ++ +++ ++ +--+ 4S DC fAPT4<br>eeee ee ee eee ee eee<br>eeee ee ee ee ee<br>700<br>Pt | | tt , '180°rec | | bo | | |<br>600 See eee eee eee. 180° sin eae eee<br>|$$}| tt tt tT dt tT tTtt fy 44 LE<br>500<br>P| | 60 rene - (SeeZaP Aan<br>400 Po Q 0G2474.6<br>P| 2.4 eee eee eee<br>| | KeeLed<br>300 Po| Ke Ss<br>Pt| | YA Oe Ee te ed<br>200 ee ee ZZ eeeee<br>Bma eC Gehäusetemperatur bei Rechteck 426 eee eee eee eeeeee eeeeee<br>100<br>| pom tt<br>| See ee ee eee eee ee<br>ee eeee<br>0<br>0 100 200 300 400 500 600 700 800<br>ITAV [A]<br>[W]<br>TAV<br>P<br>**----- End of picture text -----**<br> **Durchlassverlustleistung je Zweig / On-state power loss per arm PTAV = f(ITAV)** Strombelastung je Zweig / Current load per arm **Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)** Parameter: Stromflußwinkel / Current conduction angle Θ **==> picture [496 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>Se ee ee eee eee<br>120<br>| SSS<br>pu TESS<br>100 po | ON PK See<br>po NUN EN EN, RAR<br>oe es<br>80<br>ee ee eeeee<br>peee<br>60<br>ee ee ee eee<br>40 p f<br>pf Q taorsin PE DC<br>PT sane com | 90° rec 120° rec 180° rec PP fe |<br>20<br>0 100 200 300 400 500 600 700 800<br>ITAVM [A]<br>[°C]<br>C<br>T<br>**----- End of picture text -----**<br> **Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)** Strombelastung je Zweig / Current load per arm **Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)** Parameter: Stromflußwinkel Θ / Current conduction angle Θ 7/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **==> picture [146 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> Technische Information /<br>technical information<br>**----- End of picture text -----**<br> **==> picture [517 x 688] intentionally omitted <==** **----- Start of picture text -----**<br> Phase Control ThyristorNetz-Thyristor-Modul Module eTT540N22P60 InfineonGmbHTechnologies& Co. KG Bipolar<br>2600<br>2400 aN 0,10 IN| RthCA [K/W] _ B2 ID eee eee<br>NE => + ee po<br>2200 0,12 NIA poee ee R-Last || ee<br>NN ss<br>R-load<br>2000 Ne eee ~ p o o [XTA Z<br>0,15<br>I NON ee ee 4 eee|<br>1800 NNN po AA L-Last<br>1600 PNR 0,20 IK - PA L-load<br>PS NAS po<br>1400 po [NN] Pp NEIXR KI [R] [Ed] ee ee ee ee ee<br>0,25 [J NKR<br>1200 NNNNNNR N Oe<br>0,30 PANN KAN Ogee<br>1000<br>0,40<br>800<br>|_| ENE!<br>0,60<br>600<br>0,80 JESSE FA<br>400 1,00 SSS<br>200 2,00<br>SSG<br>0<br>20 40 60 80 100 120 0 200 400 600 800 1000<br>1,00 2,00 T A [°C] I D [A]<br>Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>3500 PF 0,10 OK R thCA [K/W] B6 ID a<br>+<br>0,12<br>3000 aN EN eee 3~ a a ee ee ee ee eee<br>0,15<br>2500 PEEaNIXNSNea ee ee| - poofPoa afpKEee ee ee ee eee<br>0,20<br>P | NNRNASI RR F NF Y EEeseeE E OE<br>2000 a, NS NN pout [paz] ee ee eee<br>0,25 a Ns NN ee ee aee<br>0,30<br>1500 p SEAR Pe PP PAee” ee ee eee<br>0,40<br>JOSRIAISWN ee<br>0,50 a ee a SD NSD. ON Ne eee es a ee ee ee ee eee<br>1000<br>0,60 ~~ ESSER ee ee ee ee eee<br>0,80<br>500 1,00 ,<br>1,50 SSESSIU Ee<br>2,00<br>SSS a<br>0<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300<br>T A [°C] ID [A]<br>Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br> [W]<br> tot<br>P<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br> 8/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **==> picture [146 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> Technische Information /<br>technical information<br>**----- End of picture text -----**<br> **==> picture [153 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Netz-Thyristor-Modul<br>Phase Control Thyristor Module<br>**----- End of picture text -----**<br> **==> picture [133 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> eTT540N22P60<br>**----- End of picture text -----**<br> **==> picture [506 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> 1500<br>1400 P 0,08 oN | R thCA K/W] _ W~1C Pit tT TT<br>1300 IRMS<br>0,10<br>1200 owe 1 Pot PT<br>oN ee eee Pot |<br>0,12<br>1100 B ee Pot |PE<br>1000 ~<br>0,15<br>900 o IXNAe PotPot |tT tT ET<br>800 0,20 KNA)KAT PP EeA<br>700 NNER AR Et<br>0,25<br>600 0,30 DSNNee eee<br>500 NNN<br>0,40<br>400 0,50 PpNASSAUee eee Ee<br>300 0,60<br>SeNee eeee eee<br>0,80<br>200 1,00 — SSSNRE ee<br>100 2,00 SSSWN BE Ee eee<br>0 SSS Ee<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>TA [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W1C - Einphasen-Wechselwegschaltung / Single-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>4500<br>0,08 S| R thCA [K/W] ~ W3C~ ~ IRMS<br>4000 PNP 2) EERE<br>0,10 WN eee PPE<br>3500 0,12 NIA | ~ ~ ~ ee ee<br>NR NN ee PtPA<br>3000 0,15<br>2500 P S R<br>Pp 0,20 SOSAa NO INA ae ee ce PZ<br>2000 0,25<br>0,30<br>1500 P ES Fe<br>0,40 SSSA™ > WN pf fe<br>0,50<br>1000 0,600,80 ESSSS SEREANSS Eee<br>500 1,00 SESRE<br>2,00 SSSSN CN A ee eee eee<br>0 ee ee<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>T A [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W3C - Dreiphasen-Wechselwegschaltung / Three-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>[W]<br> tot<br>P<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br> 9/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 ## **Technische Information /** ## **technical information** **==> picture [510 x 360] intentionally omitted <==** **----- Start of picture text -----**<br> Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT540N22P60 GmbH & Co. KG<br>a “ec mbH 8 Co<br>10000 aPesO a SS O(N SC (GNCS COGC DE i1000ATM =<br>poemmy<br>a GGQO ce<br>a a OOeC 500A<br>200A<br>fF} GO<br>a _f ff ft ftpe<br>100A<br> eeSe<br>50A<br>|eeee e e ee<br>1000<br>pT<br>po<br>po<br>ee po<br>100<br>1 10 -di/dt [A/µs] 100<br>Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)<br>Tvj = Tvjmax, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM<br>Parameter: Durchlaßstrom / On-state current iTM<br>Q [µAs]r<br>**----- End of picture text -----**<br> **==> picture [488 x 323] intentionally omitted <==** **----- Start of picture text -----**<br> 10.000 SS EE<br>pr<br>9.000<br>a a<br>8.000 casOO OY<br>aee 7<br>7.000 TA<br>pSa a 5c —Cr<br>6.000 a GGG —~<br>a<br>5.000 Pees SSE<br>a<br>4.000 PE<br>a SS<br>SS<br>3.000 SO EO<br>a<br>2.000 a<br>a a /2 S<br>1.000 a SOO0 |<br>A Se CC b CC ee ee T ee A Pr<br>0<br>0,01 0,1 1<br>t [s]<br>Grenzstrom / Maximum overload on-state current IT(OV)M = f(t), vRM = 0,8 VRRM<br>a: Leerlauf / No-load conditions<br>b: nach Belastung mit ITAVM / after load with ITAVM<br>TA = 35°C, verstärkte Luftkühlung / Forced air cooling<br>TA = 45°C, Luftselbstkühlung / Natural air cooling<br> [A]<br>IT(OV)M<br>**----- End of picture text -----**<br> 10/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1 **Technische Information / technical information** **Netz-Thyristor-Modul Phase Control Thyristor Module** ## **eTT540N22P60** ## Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes für Ihre Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen. Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Für Interessenten halten wir Application Notes bereit. Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Sollten Sie beabsichtigen, das Produkt in gesundheits- oder lebensgefährdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle - die gemeinsame Durchführung eines Risiko- und Qualitätsassessments; - den Abschluss von speziellen Qualitätssicherungsvereinbarungen; - die gemeinsame Einführung von Maßnahmen einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen. Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben. Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten. ## Terms & Conditions of usage The product data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the specifications of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you. For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 11/11 Seite/page Date of Publication 2018-07-30 Revision: 3.1
Updated at June 7, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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