![DF80R07W1H5FPB11BPSA1 — IGBT Module, Dual [Half Bridge], 40 A, 1.4 V, 150 °C, Module](/media/0/2/9/76D8164ED0EA0920.webp)
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DF80R07W1H5FPB11BPSA1
IGBT Module, Dual [Half Bridge], 40 A, 1.4 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK TRENCHSTOP
- IGBT Technology: Trench Stop 5 H5/ CoolSiC
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 40A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.4V
- Collector Emitter Saturation Voltage Vce(on): 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 19.86 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## DF80R07W1H5FP_B11
J VCES = 650V IC nom = 40A / ICRM = 80A
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- CoolSiC[TM]
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-
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- Al2O3 Substrat mit kleinem thermischen Widerstand
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- Thermisches Interface Material bereits aufgetragen
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- CoolSiC[TM]
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-
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- Al2O3
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-
-
**Digit**
Datasheet www.infineon.com
2018-10-05
DF80R07W1H5FP_B11
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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|650|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|40|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 100°C, Tvj max= 175°C|ICDC|20|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|80|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 20 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,40<br>1,45<br>1,50|1,72|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,35 mA, VCE= VGE, Tvj= 25°C|VGEth|3,25|4,00|4,75|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 400 V|QG||0,165||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||2,00||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,008||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 650 V, VGE= 0 V, Tvj= 25°C|ICES|||0,012|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 20 A, VCE= 400 V<br>VGE= -15 / 15 V<br>RGon= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,012<br>0,013<br>0,013||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 20 A, VCE= 400 V<br>VGE= -15 / 15 V<br>RGon= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,003<br>0,004<br>0,004||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 20 A, VCE= 400 V<br>VGE= -15 / 15 V<br>RGoff= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,072<br>0,09<br>0,095||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 20 A, VCE= 400 V<br>VGE= -15 / 15 V<br>RGoff= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,018<br>0,028<br>0,029||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 20 A, VCE= 400 V, Lσ= 25 nH<br>di/dt = 6300 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||0,091<br>0,12<br>0,127||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 20 A, VCE= 400 V, Lσ= 25 nH<br>du/dt = 7500 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 2,7Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||0,076<br>0,167<br>0,195||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 400 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||180||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||1,85|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
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## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|30|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||2,37|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|**Diode,Hochsetzsteller/Diode,Boost**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|20|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|40|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|18,0<br>15,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>IF= 20 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,60<br>1,65|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 20 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||35,2<br>32,6<br>31,9||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 20 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,31<br>0,29<br>0,29||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 20 A, - diF/dt = 6300 A/µs (Tvj=150°C)<br>VR= 400 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,044<br>0,039<br>0,038||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||2,15|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
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## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||16||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||23||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07
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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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40 40<br>Tvj = 25°C VGE = 7 V<br>Tvj = 125°C VGE = 9 V<br>35 Tvj = 150°C 35 VVGEGE = 11 V = 15 V<br>VGE = 17 V<br>VGE = 19 V<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
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**----- Start of picture text -----**<br>
40<br>Tvj = 25°C<br>Tvj = 125°C<br>35 Tvj = 150°C<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�2.7� Ω ,�RGoff�=�2.7� Ω ,�VCE�=�400�V
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0,40<br>Eon, Tvj = 125°C<br>Eon, Tvj = 150°C<br>0,35 EEoffoff, T, Tvjvj = 125°C = 150°C<br>0,30<br>0,25<br>0,20<br>0,15<br>0,10<br>0,05<br>0,00<br>0 5 10 15 20 25 30 35 40<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =20A,V CE =400V VGE =415V,R Gon =2.7 Ω ,R Goff =27 Ω ,V CE =400V,T vj =150°C<br>0,40 1000<br>Eon, Tvj = 125°C tdon<br>Eon, Tvj = 150°C t r<br>0,35 EEoffoff, T, Tvjvj = 125°C = 150°C pf W= tt dofff fo<br>0,30 y/ | tf | | hd] | |<br>Y 7 100 ~S- ee<br>0,25<br>yp 7 a-— a<br>GYy —<br>0,20<br>Y<br>0,15<br>10<br>0,10<br>0,05 =a<br>7<br>7<br>0,00 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40<br>RG [ Ω ] IC [A]<br>E [mJ] t [ns]<br>**----- End of picture text -----**<br>
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =415V,1 C =20A,V CE =400V,T vj =150°C<br>1000 Deere __e—oeeee_ ees 10 ee<br>tdon ZthJH : IGBT<br>| t r po [|<br>t doff<br>t f<br>100<br>1<br>/<br>10 “a7Z Zza i<br>i: 1 2 3 4<br>ri[K/W]: 0,162 0,482 0,609 0,597<br>τ i[s]: 0,00211 0,015 0,0909 0,0909<br>1 0,1<br>0 5 10 15 20 25 30 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>t [ns]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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## **Sicherer�Rückwärts-Arbeitsbereich�IGBT,Wechselrichter (RBSOA) reverse�bias�safe�operating�area�IGBT,Inverter�(RBSOA)** IC�=�f�(VCE)
## **Kapazitäts�Charakteristik�IGBT,Wechselrichter�(typisch) capacity�characteristic�IGBT,Inverter�(typical)**
C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�1MHz
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**----- Start of picture text -----**<br>
VGE�=�±15�V,�RGoff�=�2.7� Ω ,�Tvj�=�150°C<br>100 100<br>IC, Modul C ies<br>IC, Chip Coes<br>90 C res<br>80 10<br>70<br>60 1<br>50<br>40 0,1<br>30<br>20 0,01<br>10<br>0 0,001<br>0 100 200 300 400 500 600 700 0 5 10 15 20 25 30<br>VCE [V] VCE [V]<br>Gateladungs�Charakteristik�IGBT,Wechselrichter�(typisch) Durchlasskennlinie�der�Diode,�Wechselrichter�(typisch)<br>gate�charge�characteristic�IGBT,Inverter�(typical) forward�characteristic�of�Diode,�Inverter�(typical)<br>VGE�=�f(QG) IF�=�f�(VF)<br>IC�=�20�A,�Tvj�=�25°C<br>15 60<br>VCC = 400 V Tvj = 25 °C<br>Tvj = 125 °C<br>12 Tvj = 150 °C<br>50<br>9<br>6<br>40<br>3<br>0 30<br>-3<br>20<br>-6<br>-9<br>10<br>-12<br>-15 0<br>0 25 50 75 100 125 150 175 0,0 0,5 1,0 1,5 2,0 2,5<br>QG [nC] VF [V]<br> [A]<br>IC C [nF]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>
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ZthJH =f (t) IF =f(V F)<br>10 pot TE 40 /<br>ZthJH : Diode Tvj = 25 °C<br>[— | Tvj = 125 °C / /<br>35 Tvj = 150 °C // / /<br>//<br>//<br>30 /f<br>lj<br>ATT FT lf/i<br>25 i}<br>/i<br>1 20 yy<br>/1<br>/<br>15<br>10<br>i: 1 2 3 4 5<br>ri[K/W]: 0,227 0,795 0,594 0,754<br>/ τ i[s]: 0,0022 0,0177 0,0978 0,0978 /<br>Dh LZJ<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
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Erec =f (I F) Erec =f(R G)<br>RGon =2.7 Ω ,V CE =400V IF =20A,V CE =400V<br>0,05 0,05<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>0,04 0,04<br>a<br>-<br>o<br>o<br>/<br>0,03 7 0,03<br>0,02 0,02<br>0,01 0,01<br>S<br> S<br> S<br>0,00 0,00<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH
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10 100000<br>ZthJH : Diode Rtyp<br>10000<br>ee PNa<br>1 a<br>Lo Ne<br>nd<br>Cao<br>1000<br>ee ee ee ee<br>i: 1 2 3 4<br>ri[K/W]: 0,427 0,702 0,449 0,572<br>τ i[s]: 0,0021 0,0174 0,0986 0,0986<br>0,1 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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## **Schaltplan�/�Circuit�diagram**
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J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�Package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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## Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-10-05 © 2018 Infineon Technologies AG. All Rights Reserved. Published by Infineon Technologies AG Do you have a question about this document? 81726 München, Germany Email: erratum@infineon.com
## WICHTIGER HINWEIS
Die in diesem Dokument enthaltenen Angaben stellen keinesfalls Garantien für die Beschaffenheit oder Eigenschaften des Produktes (“Beschaffenheitsgarantie“) dar. Für Beispiele, Hinweise oder typische Werte, die in diesem Dokument enthalten sind, und/oder Angaben, die sich auf die Anwendung des Produktes beziehen, ist jegliche Gewährleistung und Haftung von Infineon Technologies ausgeschlossen, einschließlich, ohne hierauf beschränkt zu sein, die Gewähr dafür, dass kein geistiges Eigentum Dritter verletzt ist.
Des Weiteren stehen sämtliche, in diesem Dokument enthaltenen Informationen, unter dem Vorbehalt der Einhaltung der in diesem Dokument festgelegten Verpflichtungen des Kunden sowie aller im Hinblick auf das Produkt des Kunden sowie die Nutzung des Infineon Produktes in den Anwendungen des Kunden anwendbaren gesetzlichen Anforderungen, Normen und Standards durch den Kunden.
Die in diesem Dokument enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes für die beabsichtigte Anwendung sowie die Beurteilung der Vollständigkeit der in diesem Dokument enthaltenen Produktdaten für diese Anwendung obliegt den technischen Fachabteilungen des Kunden.
Sollten Sie von uns weitere Informationen im Zusammenhang mit dem Produkt, der Technologie, Lieferbedingungen bzw. Preisen benötigen, wenden Sie sich bitte an das nächste Vertriebsbüro von Infineon Technologies (www.infineon.com).
## WARNHINWEIS
Aufgrund der technischen Anforderungen können Produkte gesundheitsgefährdende Substanzen enthalten. Bei Fragen zu den in diesem Produkt enthaltenen Substanzen, setzen Sie sich bitte mit dem nächsten Vertriebsbüro von Infineon Technologies in Verbindung.
Sofern Infineon Technologies nicht ausdrücklich in einem schriftlichen, von vertretungsberechtigten Infineon Mitarbeitern unterzeichneten Dokument zugestimmt hat, dürfen Produkte von Infineon Technologies nicht in Anwendungen eingesetzt werden, in welchen vernünftigerweise erwartet werden kann, dass ein Fehler des Produktes oder die Folgen der Nutzung des Produktes zu Personenverletzungen führen.
## IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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