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ETD630N16P60HPSA1
SCR THYRISTOR, 1.6KV, 635A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Thyristors - SCR Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 5Pins
- Product Range: -
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- On State RMS Current: 700A
- Thyristor Case Style: Module
- Average Forward Current: 635A
- Gate Trigger Current Max: 250mA
- Gate Trigger Voltage Max: 2V
- Operating Temperature Max: 135°C
- Repetitive Peak Reverse Voltage: 1.6kV
- Peak Repetitive Off State Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 218.16 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT630N16P60**
## **Key Parameters**
VDRM / VRRM 1600V
ITAVM 635A (TC=85°C) ITSM 19800A VT0 0,8V rT 0,287mΩ RthJC 0,06K/W Base plate 60mm
For type designation please refer to actual short form catalog
http://www.ifbip.com/catalog
## **Merkmale**
- Druckkontakt-Technologie für hohe Zuverlässigkeit
- Advanced Medium Power Technology (AMPT)
- Industrie-Standard-Gehäuse
- Elektrisch isolierte Bodenplatte
- Optional: Thermisches Interface Material (TIM) bereits aufgetragen
## **Features**
- Pressure contact technology for high reliability
- Advanced Medium Power Technology (AMPT)
- Industrial standard package
- Electrically insulated base plate
- Option: Pre-applied thermal interface material (TIM)
## **Typische Anwendungen**
- Sanftanlasser
- Gleichrichter für Antriebsapplikationen
- Kurzschließer-Applikationen
- Leistungssteller
- Gleichrichter für UPS
- Batterieladegleichrichter
- Statische Umschalter
- Bypass-Schalter
## **Typical Applications**
- Soft starter
- Rectifier for drives applications
- Crowbar applications
- Power controllers
- Rectifiers for UBS
- Battery chargers
- Static switches
- Bypass swich
~~Se|~~ content of customer DMX code DMX code DMX code digit digit quantity ~~a~~ serial number 1..5 5 ~~a~~ SAP material number 6..12 7 ~~a~~ Internal production order number 13..20 8 ~~a~~ datecode (production year) 21..22 2 ~~a~~ datecode (production week) 23..24 2
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Date of Publication 2024-08-22
1/11
Seite/page
Revision: 3.3
## **Technische Information / technical information**
**Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT630N16P60**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT630N16P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|**Elektrische Eigenschaften / Electrical properties**<br>HöchstzulässigeWerte /Maximum ratedvalues<br>**eTT630N16P60...**<br>**eTD630N16P60**<br>**eTD630N16P60_TIM**<br>Periodische Vorwärts- und Rückwärts-Spitzensperrspannung<br>repetitive peak forward off-state and reverse voltages<br>Tvj= -40°C... Tvj max<br>VDRM,VRRM <br>1600 V<br>Vorwärts-Stoßspitzensperrspannung<br>non-repetitive peak forward off-state voltage<br>Tvj= -40°C... Tvj max<br>VDSM<br>1600<br>V<br>Rückwärts-Stoßspitzensperrspannung<br>non-repetitive peak reverse voltage<br>Tvj= +25°C... Tvj max<br>VRSM<br>1700<br>V<br>Durchlaßstrom-Grenzeffektivwert<br>maximum RMS on-state current<br>ITRMSM<br>700 A<br>Dauergrenzstrom<br>average on-state current<br>TC= 85°C<br>ITAVM<br>635<br>A<br>Stoßstrom-Grenzwert<br>surge current<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>ITSM<br>19800<br>14700<br>A<br>A<br>Grenzlastintegral<br>I²t-value<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>I²t<br>1960200<br>1080450<br>A²s<br>A²s<br>Kritische Stromsteilheit<br>critical rate of rise of on-state current<br>DIN IEC 747-6<br>f = 50Hz, iGM= 1A, diG/dt = 1A/µs<br>(diT/dt)cr<br>200 A/µs<br>Kritische Spannungssteilheit<br>critical rate of rise of off-state voltage<br>Tvj= Tvj max, vD= 0,67 VDRM<br>(dvD/dt)cr<br>1000 V/µs<br>CharakteristischeWerte / Characteristicvalues<br>Durchlaßspannung<br>on-state voltage<br>Tvj= Tvj max, iT= 1500 A<br>vT<br>max.<br>1,37<br>V<br>Schleusenspannung<br>threshold voltage<br>Tvj= Tvj max<br>V(TO)<br>max.<br>0,8 V<br>Ersatzwiderstand<br>slope resistance<br>Tvj= Tvj max<br>rT<br>max. 0,287 mΩ<br>Zündstrom<br>gate trigger current<br>Tvj= 25°C, vD= 12V<br>IGT<br>max.<br>250 mA<br>Zündspannung<br>gate trigger voltage<br>Tvj= 25°C, vD= 12V<br>VGT<br>max.<br>2 V<br>Nicht zündender Steuerstrom<br>gate non-trigger current<br>Tvj= Tvj max, vD= 12V<br>Tvj= Tvj max, vD= 0,5 VDRM<br>IGD<br>max.<br>max.<br>10<br>5<br>mA<br>mA<br>Nicht zündende Steuerspannung<br>gate non-trigger voltage<br>Tvj= Tvj max, vD= 0,5 VDRM<br>VGD<br>max.<br>0,25 V<br>Haltestrom<br>holding current<br>Tvj= 25°C, vD= 12V, RA= 1Ω<br>IH<br>max.<br>300 mA<br>Einraststrom<br>latching current<br>Tvj= 25°C, vD= 12V, RGK≥ 10Ω<br>iGM= 1A, diG/dt = 1A/µs, tg= 20µs<br>IL<br>max.<br>1500 mA<br>Vorwärts- und Rückwärts-Sperrstrom<br>forward off-state and reverse current<br>Tvj= Tvj max<br>vD= VDRM, vR= VRRM<br>iD, iR<br>max.<br>110 mA<br>Zündverzug<br>gate controlled delay time<br>DIN IEC 747-6<br>Tvj= 25°C, iGM= 1A, diG/dt = 1A/µs<br>tgd<br>max.<br>4 µs<br>prepared by: AG<br>date of publication: 2024-08-22<br>approved by: SI<br>revision:<br>3.3||||||
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Revision: 3.3
## **Technische Information / technical information**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT630N16P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|Thermische Eigenschaften<br>Mechanische Eigenschaften<br>**Elektrische Eigenschaften / Electrical properties**<br>Charakteristische Werte / Characteristic values<br>Freiwerdezeit<br>circuit commutated turn-off time<br>Tvj= Tvj max, iTM= ITAVM<br>vRM= 100 V, vDM= 0,67 VDRM<br>dvD/dt = 20 V/µs, -diT/dt = 10 A/µs<br>5.Kennbuchstabe / 5thletter O<br>tq<br>typ.<br>260<br>µs<br>Isolations-Prüfspannung<br>insulation test voltage<br>RMS, f = 50 Hz, t = 1min<br>RMS, f = 50 Hz, t = 1sec<br>VISOL<br>3,0<br>3,6<br>kV<br>kV<br>**Thermische Eigenschaften / Thermal properties**<br>Innerer Wärmewiderstand<br>thermal resistance, junction to case<br>pro Modul / per Module, Θ = 180° sin<br>pro Zweig / per arm, Θ = 180° sin<br>pro Modul / per Module, DC<br>pro Zweig / per arm, DC<br>RthJC<br>max.<br>max.<br>max.<br>max.<br>0,0315<br>0,063<br>0,03<br>0,06<br>K/W<br>K/W<br>K/W<br>K/W<br>Übergangs-Wärmewiderstand<br>thermal resistance, case to heatsink<br>pro Modul / per Module<br>pro Zweig / per arm<br>RthCH<br>typ.<br>typ.<br>0,015<br>0,03<br>K/W<br>K/W<br>Übergangs-Wärmewiderstand mit TIM<br>thermal resistance, case to heatsink, with TIM<br>pro Modul / per Module<br>pro Zweig / per arm<br>RthCH<br>typ.<br>typ.<br>0,015<br>0,03<br>K/W<br>K/W<br>Höchstzulässige Sperrschichttemperatur<br>maximum junction temperature<br>Tvj max<br>135 °C<br>Betriebstemperatur<br>operating temperature<br>Tc op<br>-40...+135 °C<br>Lagertemperatur<br>storage temperature<br>Tstg<br>-40...+135 °C<br>Lagertemperatur mit TIM<br>storage temperature with TIM<br>Tstg<br>+5...+40 °C<br>**Mechanische Eigenschaften / Mechanicalproperties**<br>Gehäuse, siehe Anlage<br>case, see annex<br>Seite 4<br>page 4<br>Si-Element mit Druckkontakt<br>Si-pellet with pressure contact<br>Innere Isolation<br>internal insulation<br>Basisisolierung (Schutzklasse 1, EN61140)<br>Basic insulation (class 1, IEC61140)<br>AlN<br>Anzugsdrehmoment für mechanische Anschlüsse<br>mounting torque<br>Toleranz / Tolerance ± 15%<br>M1<br>6<br>Nm<br>Anzugsdrehmoment für elektrische Anschlüsse<br>terminal connection torque<br>Toleranz / Tolerance ± 10%<br>M2<br>12<br>Nm<br>Steueranschlüsse<br>control terminals<br>DIN 46 244<br>A 2,8 x 0,8<br>Gewicht<br>weight<br>G<br>typ.<br>900 g<br>Kriechstrecke<br>creepage distance<br>19 mm<br>Schwingfestigkeit<br>vibration resistance<br>f = 50 Hz<br>50 m/s²<br>file-No.<br>E 83335||||||
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**Technische Information / technical information**
d **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT630N16P60**
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**Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module** a
## **eTT630N16P60**
**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC Analytical elements of transient thermal impedance ZthJC for DC**
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT630N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|
|---|---|---|---|---|---|---|---|
|**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DCthJC für DC für DC**<br>**Analytical elements of transient thermal impedance ZthJC for DCthJC for DC for DC**||||||||
|Pos. n|1|2|3|4|5|6|7|
|Rthn[K/W]|0,014|0,0159|0,02255|0,00811||||
|τn[s]|5,6|2,56939|0,8|0,00165||||
|Analytische Funktion / Analytical function:<br><br>=<br><br>max<br>n<br>n=1<br>thn<br>thJC<br>n<br>– t<br>- e<br>1<br>R<br>Z||||||||
**Erhöhung des Zth DC bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ Rise of Zth DC for sinewave and rectangular current with different current conduction angles Θ ΔZth Θ rec / ΔZth Θ sin**
||Θ = 180°|Θ = 120°|Θ = 90°|Θ = 60°|Θ = 30°|
|---|---|---|---|---|---|
|ΔZth Θ rec<br>[K/W]|0,00826|0,01604|0,02304|0,03443|0,05412|
|ΔZth Θ sin<br>[K/W]|0,00252|0,00570|0,01103|0,02157|0,04359|
Zth Θ rec = Zth DC + Zth Θ rec
Zth Θ sin = Zth DC + Zth Θ sin
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## **Technische Information / technical information**
## **Diagramme Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT630N16P60**
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0,070 apoa a OOppOQ OOCCOG<br>popp<br>popp<br>0,060 poasee e ee Oe Oe QR<br>poe<br>popeeT<br>po eT<br>0,050 poa a a OOGO<br>(a ee OOO<br>poeesO Oe Oe esQOee<br>poa<br>0,040 Poe<br>po<br>po<br>po ge<br>po<br>0,030 (OOOpo 7,CGOGG lS OGOO<br>po<br>poea<br>poaeee<br>0,020 PoOG OGGG<br>poae<br>poee<br>porr<br>0,010 aJeeseOOOD OGOO GC OG<br>pop<br>po<br>po<br>0,000 ER OO GO GCCOOG<br>0,01 0,1 t [s] 1 10 100<br> [K/W]<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>
**Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)** Durchgangsverluste Parameter: Stromflußwinkel Θ / Current conduction angle Θ
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100 —ee(SSee<br>po<br>po<br>10 c<br>a STS<br>aes b SS<br>po eer a S= Se<br>ee eers ee ee ee ee Nee TT<br>Pr ee<br>eeee<br>1<br>—————a 2 Aeeee ee<br>——zr_eee—aueeeeee eeeeee e AlaFe| ace acea(GGOees ee ee<br>BE Albee<br>0,1<br>10 100 iG [mA] 1000 10000<br>Steuercharakteristik vG = f (iG) mit Zündbereichen für VD = 12 V<br>Gate characteristic vG = f (iG) with triggering area for VD = 12 V<br>Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) :<br>a - 20W/10ms b - 40W/1ms c - 60W/0,5ms<br> [V]<br>G<br>v = -40 CTvj<br> = = +25 CTvj<br>vj max<br>T +135 C<br>**----- End of picture text -----**<br>
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**Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT630N16P60**
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800<br>DC<br>PEeeRRee HEH]PTT<br>700<br>ee eee eee eee eee ae<br>600 ee ee ee ee 180 rec tet<br>180 sin<br>ERR rit|<br>120 rec<br>500 PE 90 rec 4 tt i<br>60 rec<br>Pte PAa4y 42a eee eee<br>400 Q = 30 rec<br>pepe At |<br>Zaee LeeEt<br>300 ee e e<br>ee ee<br>200 ee eeeeeZa A eee e ee eeeee eee eeee e<br>anne 2aeee<br>Gehäusetemperatur bei Rechteck ee ee ee<br>100 PgR ee eee<br>|Ca<br>0 eeee ee ee ee eee eee<br>0 100 200 300 400 500 600 700 800<br>ITAV [A]<br>[W]<br>TAV<br>P<br>**----- End of picture text -----**<br>
**Durchlassverlustleistung je Zweig / On-state power loss per arm PTAV = f(ITAV)**
Strombelastung je Zweig / Current load per arm
**Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)**
Parameter: Stromflußwinkel / Current conduction angle Θ
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140<br>te ee ee ee eee eee<br>120<br>pO NESS<br>pi | NOSRSSSESEE Rp<br>100<br>pNP ENO REESE<br>ae ee a eee ee<br>ee ee ee |<br>80<br>ee ee ee ee<br>ee ee ee |<br>60<br>ee ee eeeee<br>180 sin<br>Pt Rt<br>40<br>Q = 30 rec 60 rec 90 rec 120 rec 180 rec DC<br>20 pape || | i {| | | fe Fit]| iy |fy |<br>0 100 200 300 400 500 600 700 800<br>ITAVM [A]<br>[°C]<br>C<br>T<br>**----- End of picture text -----**<br>
## **Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)**
Strombelastung je Zweig / Current load per arm
**Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)**
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
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2800<br>2600 ee 0,10 eee RthCA [K/W] a B2 = ID a Es ee ee OQ<br>+<br>2400 — XE— PE a a a a ee<br>2200 Po 0,12 oSa KRNefF| ~ Ee eeee ee ee eeeAE<br>2000 0,15 NN | | ee ee ee R-Last ee<br>R-load<br>1800 NINN - pp an<br>1600 0,20 L-Last<br>L-load<br>1400 rd, p p<br>0,25 SN e ee A<br>1200<br>0,30<br>1000<br>0,40<br>800 pW NRASOS 2PA<br>0,60<br>600<br>400 0,801,00 —T——}TES:SFSSSAAAA ee a ee eee eee<br>200 2,00<br>SEA el Oe<br>0<br>20 40 60 80 100 120 0 200 400 600 800 1000<br>1,00 2,00 T A [°C] I D [A]<br>Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>——- R thCA [K/W] B6 ID a ee ee Oe<br>3500 0,10 | —> + Ee a ee i ee ee ee ee ee es ee es ee ee ee<br>NE ER a ee ee ss ee se ee<br>3000 _ 0,12 3~ Poee ee ee ee ee ee ee<br>0,15 -<br>K NORN S e PoPee ee eeeeeeeeeeeeeeeeeee Pee<br>2500 NNNEe ee ee ee es Aa eeee eeeeeeee ee ee eeAee eee eee<br>0,20 — N NR EEE EE<br>2000 0,25 NNER]NENA: = poeEEE re<br>0,30<br>1500 WORN Ere<br>0,40<br>FSR ERS ee<br>0,50<br>1000<br>0,60 — — Ss |<br>0,80<br>SSS AA ee<br>500 1,501,00 — SS , SSswi ee<br>2,00<br>SSS a ee ee eee<br>0 Ee a eeees e s<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300<br>T A [°C] ID [A]<br> [W]<br> tot<br>P<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
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Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>**----- End of picture text -----**<br>
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Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT630N16P60 GmbH & Co. KG<br>1600<br>1500 0,08 R thCA K/W] W~1C<br>1400 == a — es IRMS TOLLE OO LLL LLL LL LLL<br>13001200 S 0,10 N So POLPOLEEE [EEE] EL LLL<br>0,12<br>1100 P SN ~ EL LLL<br>1000 0,15 PO EEE ELL<br>900 Pp SSE POELMeee ee LLL<br>800 0,20 SSS Per<br>700 WONISSA LPeee<br>0,25<br>600 0,30 SBS FE<br>500 ESSENASK PEeee<br>0,40<br>400 0,50 SSS) FEES SEE<br>300 0,60 ToS) EE<br>0,80<br>200<br>1,00 SSS SSS] EET<br>100 2,00 SSS) eee<br>0 ——SESwwWwSSS STOOOOHOoee<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>TA [°C] I RMS [A]<br>[W]<br> tot<br>P<br>**----- End of picture text -----**<br>
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Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>**----- End of picture text -----**<br>
W1C - Einphasen-Wechselwegschaltung / Single-phase inverse parallel circuit Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot
Parameter: Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung / Thermal resistance per chip cases to ambient RthCA
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4500<br>I 0,08 R thCA [K/W] ~ W3C~ ~ IRMS<br>4000 Nee W | Eebeeee<br>O 0,10 T beee e eee e<br>3500 0,12 ~ ~ ~ Pepe<br>PpSRN [NATO] ooorn ee EE<br>3000 0,15<br>S E FEE<br>2500<br>0,20 = e pp pp a<br>2000 0,25<br>A<br>0,30 ERE<br>1500 P > [SEER] NS NX R<br>0,40 SESShr a L |<br>— po ee<br>0,50<br>1000 0,600,80 KEES=AEE EeeFEES<br>500 1,00 RE SSSSSSANU ee<br>2,00<br>SSS SSS Si CSE<br>0 E SSESSSSN be<br>20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 1100<br>T A [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W3C - Dreiphasen-Wechselwegschaltung / Three-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
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Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT630N16P60 GmbH & Co. KG<br>a “ec mbH 8 Co<br>10000<br>a<br>GGPO—“Csi—“CSsi‘“iSSC(QOGO<br>a iTM =<br>1000A<br>500A<br>200A<br>eee[——<br>pt | | |ee 100A<br>50A<br>pePf rrr<br>1000<br>ee ce Ee<br>Pe—/\sFeeee<br>ce<br>oO<br>100<br>1 10 -di/dt [A/µs] 100<br>Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)<br>Tvj = Tvjmax, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM<br>Parameter: Durchlaßstrom / On-state current iTM<br>11.000<br>a<br>a<br>10.000<br>——<br>9.000 ee a a<br>a<br>8.000 =aa TA = 35 C TooToon<br>a ooo<br>7.000<br>EEE<br>a GY<br>6.000<br>ooo —_OTET<br>5.000 Cs<br>oo TS<br>A<br>4.000<br>3.000 _a<br>YY<br>Od<br>2.000<br>DIPe<br>1.000 4 |<br>b TA = 45 C<br>aee Fle<br>0<br>0,01 0,1 1<br>t [s]<br>Grenzstrom / Maximum overload on-state current IT(OV)M = f(t), vRM = 0,8 VRRM<br>a: Leerlauf / No-load conditions<br>b: nach Belastung mit ITAVM / after load with ITAVM<br>TA = 35°C, verstärkte Luftkühlung / Forced air cooling<br>TA = 45°C, Luftselbstkühlung / Natural air cooling<br> [A]<br>IT(OV)M<br>Q [µAs]r<br>**----- End of picture text -----**<br>
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**Technische Information / technical information**
**Netz-Thyristor-Modul Phase Control Thyristor Module**
# **eTT630N16P60**
## Nutzungsbedingungen
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## Terms & Conditions of usage
The product data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the specifications of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you. For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
11/11
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Date of Publication 2024-08-22
Revision: 3.3
Updated at June 7, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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