Image not available
Illustrative purposes only
ETD580N16P60HPSA1
SCR THYRISTOR, 1.6KV, 586A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Thyristors - SCR Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 5Pins
- Product Range: -
- SCR Module Type: Series Connected - SCRs
- Thyristor Mounting: Panel
- On State RMS Current: 700A
- Thyristor Case Style: Module
- Average Forward Current: 586A
- Gate Trigger Current Max: 250mA
- Gate Trigger Voltage Max: 2V
- Operating Temperature Max: 135°C
- Repetitive Peak Reverse Voltage: 1.6kV
- Peak Repetitive Off State Voltage: 1.6kV
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 209.11 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
## **Key Parameters**
VDRM / VRRM 1600V ITAVM 586A (TC=85°C) ITSM 16500A VT0 0,8V rT 0,327mΩ RthJC 0,0645K/W Base plate 60mm
For type designation please refer to actual short form catalog
http://www.ifbip.com/catalog
## **Merkmale**
- Druckkontakt-Technologie für hohe Zuverlässigkeit
- Advanced Medium Power Technology (AMPT)
- Industrie-Standard-Gehäuse
- Elektrisch isolierte Bodenplatte
## **Features**
- Pressure contact technology for high reliability
- Advanced Medium Power Technology (AMPT)
- Industrial standard package
- Electrically insulated base plate
## **Typische Anwendungen**
- Sanftanlasser
- Gleichrichter für Antriebsapplikationen
- Kurzschließer-Applikationen
- Leistungssteller
- Gleichrichter für UPS
- Batterieladegleichrichter
- Statische Umschalter
- Bypass-Schalter
## **Typical Applications**
- Soft starter
- Rectifier for drives applications
- Crowbar applications
- Power controllers
- Rectifiers for UBS
- Battery chargers
- Static switches
- Bypass swich
~~FFSe |~~ content of customer DMX code DMX code DMX code digit digit quantity ~~a~~ serial number 1..5 5 ~~a~~ SAP material number 6..12 7 ~~a~~ Internal production order number 13..20 8 ~~a~~ datecode (production year) 21..22 2 ~~a~~ datecode (production week) 23..24 2
**==> picture [132 x 55] intentionally omitted <==**
**----- Start of picture text -----**<br>
TT TD<br>www.ifbip.com<br>-<br>a support@infineon bip.com<br>**----- End of picture text -----**<br>
1/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
## **Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
**eTT580N16P60**
**eTD580N16P60**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT580N16P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|**Elektrische Eigenschaften / Electrical properties**<br>HöchstzulässigeWerte /Maximum ratedvalues<br>**eTT580N16P60**<br>**eTD580N16P60**<br>Periodische Vorwärts- und Rückwärts-Spitzensperrspannung<br>repetitive peak forward off-state and reverse voltages<br>Tvj= -40°C... Tvj max<br>VDRM,VRRM <br>1600<br>V<br>Vorwärts-Stoßspitzensperrspannung<br>non-repetitive peak forward off-state voltage<br>Tvj= -40°C... Tvj max<br>VDSM<br>1600<br>V<br>Rückwärts-Stoßspitzensperrspannung<br>non-repetitive peak reverse voltage<br>Tvj= +25°C... Tvj max<br>VRSM<br>1700<br>V<br>Durchlaßstrom-Grenzeffektivwert<br>maximum RMS on-state current<br>ITRMSM<br>700 A<br>Dauergrenzstrom<br>average on-state current<br>TC= 85°C<br>ITAVM<br>586<br>A<br>Stoßstrom-Grenzwert<br>surge current<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>ITSM<br>16500<br>13600<br>A<br>A<br>Grenzlastintegral<br>I²t-value<br>Tvj= 25°C, tP= 10ms<br>Tvj= Tvj max, tP= 10ms<br>I²t<br>1361250<br>924800<br>A²s<br>A²s<br>Kritische Stromsteilheit<br>critical rate of rise of on-state current<br>DIN IEC 747-6<br>f = 50Hz, iGM= 1A, diG/dt = 1A/µs<br>(diT/dt)cr<br>200 A/µs<br>Kritische Spannungssteilheit<br>critical rate of rise of off-state voltage<br>Tvj= Tvj max, vD= 0,67 VDRM<br>6.Kennbuchstabe / 6thletter F<br>(dvD/dt)cr<br>1000<br>V/µs<br>CharakteristischeWerte / Characteristicvalues<br>Durchlaßspannung<br>on-state voltage<br>Tvj= Tvj max, iT= 1500 A<br>vT<br>max.<br>1,43<br>V<br>Schleusenspannung<br>threshold voltage<br>Tvj= Tvj max<br>V(TO)<br>max.<br>0,8 V<br>Ersatzwiderstand<br>slope resistance<br>Tvj= Tvj max<br>rT<br>max. 0,327 mΩ<br>Zündstrom<br>gate trigger current<br>Tvj= 25°C, vD= 12V<br>IGT<br>max.<br>250 mA<br>Zündspannung<br>gate trigger voltage<br>Tvj= 25°C, vD= 12V<br>VGT<br>max.<br>2 V<br>Nicht zündender Steuerstrom<br>gate non-trigger current<br>Tvj= Tvj max, vD= 12V<br>Tvj= Tvj max, vD= 0,5 VDRM<br>IGD<br>max.<br>max.<br>10<br>5<br>mA<br>mA<br>Nicht zündende Steuerspannung<br>gate non-trigger voltage<br>Tvj= Tvj max, vD= 0,5 VDRM<br>VGD<br>max.<br>0,25 V<br>Haltestrom<br>holding current<br>Tvj= 25°C, vD= 12V, RA= 1Ω<br>IH<br>max.<br>300 mA<br>Einraststrom<br>latching current<br>Tvj= 25°C, vD= 12V, RGK≥ 10Ω<br>iGM= 1A, diG/dt = 1A/µs, tg= 20µs<br>IL<br>max.<br>1500 mA<br>Vorwärts- und Rückwärts-Sperrstrom<br>forward off-state and reverse current<br>Tvj= Tvj max<br>iD, iR<br>max.<br>100 mA<br>Zündverzug<br>gate controlled delay time<br>DIN IEC 747-6<br>Tvj= 25°C, iGM= 1A, diG/dt = 1A/µs<br>tgd<br>max.<br>4 µs<br>prepared by: AG<br>date of publication: 2024-08-22<br>approved by: SI<br>revision:<br>3.7||||||
|Date of Publication 2024-08-22||Revision: 3.7|Seite/page||2/11|
|prepared by: AG|prepared by: AG||date of publication: 2024-08-22|date of publication: 2024-08-22|
|---|---|---|---|---|
|approved by: SI|approved by: SI||revision:|3.7|
2/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
## **Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
||**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|**Technische Information /**<br>**technical information**|o-..<br>Cinfineon|o-..<br>Cinfineon|
|---|---|---|---|---|---|
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**|**eTT580N16P60**|||Infineon Technologies Bipolar<br>GmbH & Co. KG||
|Thermische Eigenschaften<br>Mechanische Eigenschaften<br>**Elektrische Eigenschaften / Electrical properties**<br>Charakteristische Werte / Characteristic values<br>Freiwerdezeit<br>circuit commutated turn-off time<br>Tvj= Tvj max, iTM= ITAVM<br>vRM= 100 V, vDM= 0,67 VDRM<br>dvD/dt = 20 V/µs, -diT/dt = 10 A/µs<br>5.Kennbuchstabe / 5thletter O<br>tq<br>typ.<br>300<br>µs<br>Isolations-Prüfspannung<br>insulation test voltage<br>RMS, f = 50 Hz, t = 1min<br>RMS, f = 50 Hz, t = 1sec<br>VISOL<br>3,0<br>3,6<br>kV<br>kV<br>**Thermische Eigenschaften / Thermal properties**<br>Innerer Wärmewiderstand<br>thermal resistance, junction to case<br>pro Modul / per Module, Θ = 180° sin<br>pro Zweig / per arm, Θ = 180° sin<br>pro Modul / per Module, DC<br>pro Zweig / per arm, DC<br>RthJC<br>max.<br>max.<br>max.<br>max.<br>0,0335<br>0,0670<br>0,0322<br>0,0645<br>K/W<br>K/W<br>K/W<br>K/W<br>Übergangs-Wärmewiderstand<br>thermal resistance, case to heatsink<br>pro Modul / per Module<br>pro Zweig / per arm<br>RthCH<br>typ.<br>typ.<br>0,015<br>0,03<br>K/W<br>K/W<br>Höchstzulässige Sperrschichttemperatur<br>maximum junction temperature<br>Tvj max<br>135 °C<br>Betriebstemperatur<br>operating temperature<br>Tc op<br>-40...+135 °C<br>Lagertemperatur<br>storage temperature<br>Tstg<br>-40...+135 °C<br>**Mechanische Eigenschaften / Mechanicalproperties**<br>Gehäuse, siehe Anlage<br>case, see annex<br>Seite 4<br>page 4<br>Si-Element mit Druckkontakt<br>Si-pellet with pressure contact<br>Innere Isolation<br>internal insulation<br>Basisisolierung (Schutzklasse 1, EN61140)<br>Basic insulation (class 1, IEC61140)<br>AlN<br>Anzugsdrehmoment für mechanische Anschlüsse<br>mounting torque<br>Toleranz / Tolerance ± 15%<br>M1<br>6<br>Nm<br>Anzugsdrehmoment für elektrische Anschlüsse<br>terminal connection torque<br>Toleranz / Tolerance ± 10%<br>M2<br>12<br>Nm<br>Steueranschlüsse<br>control terminals<br>DIN 46 244<br>A 2,8 x 0,8<br>Gewicht<br>weight<br>G<br>typ.<br>900 g<br>Kriechstrecke<br>creepage distance<br>19 mm<br>Schwingfestigkeit<br>vibration resistance<br>f = 50 Hz<br>50 m/s²<br>file-No.<br>E 83335||||||
|Date of Publication 2024-08-22||Revision: 3.7|Seite/page||3/11|
3/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**Technische Information / technical information**
d **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
**==> picture [306 x 71] intentionally omitted <==**
**----- Start of picture text -----**<br>
1 2 3 1 2 3<br>4 5 7 6 4 5<br>TT TD<br>**----- End of picture text -----**<br>
4/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module** a
## **eTT580N16P60**
**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC Analytical elements of transient thermal impedance ZthJC for DC**
|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|**Netz-Thyristor-Modul**<br>**Phase Control Thyristor Module**<br>**eTT580N16P60**<br>a<br>“ermH Co K“_<br>GmbH & Co. KG|
|---|---|---|---|---|---|---|---|
|**Analytische Elemente des transienten Wärmewiderstandes ZthJC für DCthJC für DC für DC**<br>**Analytical elements of transient thermal impedance ZthJC for DCthJC for DC for DC**||||||||
|Pos. n|1|2|3|4|5|6|7|
|Rthn[K/W]|0,018|0,0159|0,02255|0,00811||||
|τn[s]|5,6|2,56939|0,8|0,00165||||
|Analytische Funktion / Analytical function:<br><br>=<br><br>max<br>n<br>n=1<br>thn<br>thJC<br>n<br>– t<br>- e<br>1<br>R<br>Z||||||||
**Erhöhung des Zth DC bei Sinus und Rechteckströmen mit unterschiedlichen Stromflusswinkeln Θ Rise of Zth DC for sinewave and rectangular current with different current conduction angles Θ ΔZth Θ rec / ΔZth Θ sin**
||Θ = 180°|Θ = 120°|Θ = 90°|Θ = 60°|Θ = 30°|
|---|---|---|---|---|---|
|ΔZth Θ rec<br>[K/W]|0,0083|0,01604|0,0230|0,0344|0,0541|
|ΔZth Θ sin<br>[K/W]|0,0025|0,0057|0,0110|0,0216|0,0436|
Zth Θ rec = Zth DC + Zth Θ rec
Zth Θ sin = Zth DC + Zth Θ sin
5/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
## **Technische Information / technical information**
**==> picture [513 x 703] intentionally omitted <==**
**----- Start of picture text -----**<br>
Diagramme<br>Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT580N16P60 GmbH & Co. KG<br>a “ec mbH 8 Co<br>0,080<br>a a ee<br>a el<br>0,070<br>en a eeee eee<br>a<br>0,060<br>a<br>a<br>0,050<br>a aa<br>00|<br>0,040<br>a 2<br>0,030 aYe<br>ee el<br>0,020 a2eel<br>a ee<br>0,010 eeeeeel<br>i a<br>a ee<br>0,000<br>0,01 0,1 t [s] 1 10 100<br>Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm ZthJC = f(t)<br>Durchgangsverluste<br>Parameter: Stromflußwinkel Θ / Current conduction angle Θ<br>10 a a<br>——— ee ee ee ee ee ee es <i ei<br>c<br>po } a Nd b<br>rrpo pa a ><br>a eee ee eee ee eeee> > aan<br>rrAee eee el<br>eee ee<br>1<br>eee ee ee<br>OG<br>—— 7 ec ee eee<br>——afsee<br>a 0ee ee eee<br>Ze8<br>0,1<br>10 100 iG [mA] 1000 10000<br>Steuercharakteristik vG = f (iG) mit Zündbereichen für VD = 12 V<br>Gate characteristic vG = f (iG) with triggering area for VD = 12 V<br>Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) :<br>a - 20W/10ms b - 40W/1ms c - 60W/0,5ms<br> [V]<br>G<br>v = -40 CTvj<br> = = +25 CTvj<br>vj max<br>T +135 C<br> [K/W]<br>(th)JC<br>Z<br>**----- End of picture text -----**<br>
6/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**==> picture [146 x 24] intentionally omitted <==**
**----- Start of picture text -----**<br>
Technische Information /<br>technical information<br>**----- End of picture text -----**<br>
**Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
**==> picture [495 x 239] intentionally omitted <==**
**----- Start of picture text -----**<br>
800<br>DC<br>ee Pt | | et | EE RH EEE<br>700<br>ee eee eee eee eee eee<br>Pe et<br>600 180 rec<br>Pit tte EE 180 sin Pannen<br>500 ee eee eee ee 120 rec Ip~ [aw | |<br>90 rec<br>Pt Axx _ Jr tt<br>400 ee ee 60 rec AAG ae eee ee ee<br>PT a7 ZS eae eee<br>300 Po Q = 30 rec A AME| dt<br>See eA Ze4eee ee eee eee<br>200 PL<br>|| | | |gwCN dae<br>Gehäusetemperatur bei Rechteck<br>100 |eeLa7 a eeeeee<br>0 Pc ee ee ee ee eeee<br>0 100 200 300 400 500 600 700 800<br>ITAV [A]<br>[W]<br>TAV<br>P<br>**----- End of picture text -----**<br>
**Durchlassverlustleistung je Zweig / On-state power loss per arm PTAV = f(ITAV)**
Strombelastung je Zweig / Current load per arm
**Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen) Calculation base PTAV (switching losses should be considered separately)**
Parameter: Stromflußwinkel / Current conduction angle Θ
**==> picture [496 x 304] intentionally omitted <==**
**----- Start of picture text -----**<br>
140<br>ee Re ee ee eee<br>120<br>|S<br>po PKS<br>100 po | NPE<br>TTS<br>ee ee eeSS SE|<br>80<br>a ee ee eee<br>ee ee eeee<br>60<br>120 rec<br>HPetEE Pe EEE<br>40<br>QQ = 30 rec = 30 rec 60 rec 90 rec 180 sin 180 rec DC<br>20 || | | {| | Fit] ft |_|<br>0 SEES 100 EERO 200 OWSHETAN 300 400 #70 500 FOES 600 ESEESs 700 800<br>ITAVM [A]<br>Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(ITAVM)<br>Strombelastung je Zweig / Current load per arm<br>Berechnungsgrundlage PTAV (Schaltverluste gesondert berücksichtigen)<br>Calculation base PTAV (switching losses should be considered separately)<br>[°C]<br>C<br>T<br>**----- End of picture text -----**<br>
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
7/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**==> picture [517 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
Technische Information / *<br>technical information Cinfineon<br>Phase Control ThyristorNetz-Thyristor-Modul Module eTT580N16P60 InfineonGmbHTechnologies& Co. KG Bipolar<br>2600<br>2400 |ee 0,10 [|eee RthCA [K/W] ; B2 | ID beet<br>| Ne eee +<br>2200 0,12<br>|po |NNEN T eea ee ee ee ee ee ee ee eee<br>2000 ~<br>| 0,15 KIa NCIN ee a eeeeee ee eee e ee ee R-Last eeweanee<br>1800 R-load<br>1600 Pt 0,20 ORO - ee aaa<br>el Se ee a L-Last<br>1400 0,25 L-load<br>1200<br>0,30<br>1000<br>0,40<br>800<br>a S SSNS pt A<br>600 0,60<br>-— 0,80 Ss ee ed ee<br>4001,00 1,00<br>1,00 -— = SS pe<br>200 2,00<br>2,000 e d<br>10 30 50 70 90 110 0 100 200 300 400 500 600 700 800 900 1000<br>T A [°C] I D [A]<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
## **Höchstzulässiger Ausgangsstrom / Maximum rated output current ID**
B2- Zweipuls-Brückenschaltung / Two-pulse bridge circuit Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot
Parameter: Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung / Thermal resistance per chip cases to ambient RthCA
**==> picture [507 x 323] intentionally omitted <==**
**----- Start of picture text -----**<br>
4000<br>0,10 R thCA [K/W] B6 ID<br>+<br>3500 ae Pe<br>0,12 3~<br>F PNAN asee a es atee eeeise i aa<br>3000 FTNN 0,15 fo ING TN TT - Eeaeeee es ee ee se<br>2500 ESSa\e ee ee ee<br>0,20<br>2000 PRSS 0,25 RORAA EE] EESEEE ES E ES ESS E E S E7208<br>ha, PooN ONSNNSO]NN Pe eeey<br>0,30<br>S N Nee Po<br>1500<br>PRN NNSA Ette<br>1000 S poo 0,400,500,60 PREP , ESSERES ee<br>p— 0,80 NS ee eeee<br>Ee SS Ee<br>1,00<br>500<br>1,50<br>2,00<br>SS SS Poeft<br>0 Es i |<br>10 30 50 70 90 110 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300<br>T A [°C] ID [A]<br>Höchstzulässiger Ausgangsstrom / Maximum rated output current ID<br>B6- Sechspuls-Brückenschaltung / Six-pulse bridge circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
8/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**==> picture [146 x 24] intentionally omitted <==**
**----- Start of picture text -----**<br>
Technische Information /<br>technical information<br>**----- End of picture text -----**<br>
**==> picture [508 x 685] intentionally omitted <==**
**----- Start of picture text -----**<br>
Netz-Thyristor-Modul<br>Phase Control Thyristor Module eTT580N16P60 GmbH & Co. KG<br>1500<br>1400 0,08 R thCA K/W] W~1C<br>1300 K+ KtNe _ 1 IRMS PotPot tt<br>0,10<br>1200 SN ee Pot tT<br>1100 0,12 PN KX | Pot tT Ee<br>1000 INNA | ~ Pot<br>900 0,15 NOONAN PottTtTET<br>800 0,20<br>700 PRPIN -NRANK Po<br>0,25<br>600<br>0,30 [|] pot ft PP a<br>500 Pp ee [ERR] NUNNARKCP eeEeee<br>0,40<br>400 0,50 SR NANG eeeeee ee<br>300 0,60<br>PS ee<br>0,80<br>200 1,00 a SRA Eee<br>100 2,00 SS RAN EL er<br>0 ii SSNS —— ED ae eeeeee<br>10 30 50 70 90 110 0 100 200 300 400 500 600 700 800 900 1000<br>TA [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W1C - Einphasen-Wechselwegschaltung / Single-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>4500<br>W3C<br>4000 Po) 0,08 R thCA [K/W] ~ ~ ~ IRMS<br>N e W |ER<br>Po 0,10 EK Pot EP<br>3500 ee 0,12 NN ~ ~ ~<br>es ON Neee ee eePftp<br>3000<br>0,15<br>2500 - S Y S He<br>a 0,20 Nee~~ NIK AN poof PP A<br>2000 0,25<br>0,30<br>1500 E RS FEES ari<br>0,40<br>Z SESSA ac CeeEe aeeeeeeeee<br>1000 Popo 0,500,60 ——EYESSE>a IN ee<br>500 PpPL 2,00 0,801,00 EYEeSSSNVN LE ET<br>0 a a SS SESSBS LTee<br>10 30 50 70 90 110 0 100 200 300 400 500 600 700 800 900 1000<br>T A [°C] I RMS [A]<br>Höchstzulässiger Effektivstrom / Maximum rated RMS current IRMS<br>W3C - Dreiphasen-Wechselwegschaltung / Three-phase inverse parallel circuit<br>Gesamtverlustleistung der Schaltung / Total power dissipation at circuit Ptot<br>Parameter:<br>Wärmewiderstand pro Element zwischen den Gehäusen und Umgebung /<br>Thermal resistance per chip cases to ambient RthCA<br>[W]<br> tot<br>P<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br>
9/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
## **Technische Information / technical information**
## **Netz-Thyristor-Modul Phase Control Thyristor Module**
## **eTT580N16P60**
**==> picture [482 x 233] intentionally omitted <==**
**----- Start of picture text -----**<br>
10000 aa a a CGOCO<br>a OOOG CQYGGGGO GO<br>po OO iTM =<br>Pe rrr a ee eee<br>a pe<br>$$} + +4J<br>=oopoeee<br>1000 eeCeeeeeS ie ee eeINe<br>aeeeea ee QOee ie ie Ne GGee OO<br>aa ee ee ee ee ee eses<br>ee ee<br>100<br>1 10 -di/dt [A/µs] 100<br>Q [µAs]r<br>**----- End of picture text -----**<br>
**==> picture [18 x 75] intentionally omitted <==**
**----- Start of picture text -----**<br>
iTM =<br>1000A<br>500A<br>200A<br>100A<br>50A<br>**----- End of picture text -----**<br>
## **Sperrverzögerungsladung / Recovered charge Qr = f(-di/dt)**
Tvj = Tvjmax, vR ≤ 0,5 VRRM, vRM = 0,8 VRRM
Parameter: Durchlaßstrom / On-state current iTM
**==> picture [488 x 240] intentionally omitted <==**
**----- Start of picture text -----**<br>
14.000<br>a GCCC GC CC<br>12.000 EGaeeaeeGOee eeee eeeeee iGOes eeieee i ReOOeses Ga GGesGGGCpo GOOCOCOO GOOOGOOO<br>a a<br>a eeea ee e ee e esee eeeeepo<br>a a ee ee seSe A GO<br>10.000 a a ee 0) A| TA = 35 C re<br>a aaee eeee eeeLoeA {| | | tt<br>8.000 asaaaEEQsCAes a 4A/G9OyA A G OGCGOOGO<br>es ET<br>Rs GGGQ Ai” SOOO<br>6.000 aeea CGOeeee es rs ms ee QeQACAA 6|a ai<br>aPeee ee i ee ee eSA | OO De<br>4.000 aa aa enee AAsQCQCOO<br>pOee<br>PQEe<br>2.000 GGNNA A GSGN Ue Se<br>a OQGG<br>ap T b a— ee TA = 45 C ee<br>a —— a oe | oe oe oe a CC ee joy<br>0<br>0,01 0,1 1<br>t [s]<br> [A]<br>IT(OV)M<br>**----- End of picture text -----**<br>
## **Grenzstrom / Maximum overload on-state current IT(OV)M = f(t), vRM = 0,8 VRRM**
a: Leerlauf / No-load conditions
b: nach Belastung mit ITAVM / after load with ITAVM TA = 35°C, verstärkte Luftkühlung / Forced air cooling
TA = 45°C, Luftselbstkühlung / Natural air cooling
10/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
**Technische Information / technical information**
**Netz-Thyristor-Modul Phase Control Thyristor Module**
# **eTT580N16P60**
## Nutzungsbedingungen
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Eignung dieses Produktes für Ihre Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen.
In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen.
Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Für Interessenten halten wir Application Notes bereit.
Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung.
Sollten Sie beabsichtigen, das Produkt in gesundheits- oder lebensgefährdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle
- die gemeinsame Durchführung eines Risiko- und Qualitätsassessments;
- den Abschluss von speziellen Qualitätssicherungsvereinbarungen;
- die gemeinsame Einführung von Maßnahmen einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen.
Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben.
Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten.
## Terms & Conditions of usage
The product data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the specifications of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you. For those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
11/11
Seite/page
Date of Publication 2024-08-22
Revision: 3.7
Updated at June 7, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →