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Semiconductors - Discretes

Found 27924 products. Showing up to 30 products per page.

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Manufacturer

ES3J: Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 45 ns, 100 A
Onsemi ES3J

Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 45 ns, 100 A

ES3J R6G: Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 35 ns, 100 A
Taiwan ES3J R6G

Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 35 ns, 100 A

ES3J+: Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 35 ns, 100 A
Multicomp ES3J+

Fast / Ultrafast Diode, 600 V, 3 A, Single, 1.7 V, 35 ns, 100 A

ESH1DM: Fast / Ultrafast Diode, 200 V, 1 A, Single, 1.5 V, 25 ns, 15 A
Taiwan ESH1DM

Fast / Ultrafast Diode, 200 V, 1 A, Single, 1.5 V, 25 ns, 15 A

ESH1PD-M3/84A: Fast / Ultrafast Diode, 200 V, 1 A, Single, 900 mV, 25 ns, 50 A
Vishay ESH1PD-M3/84A

Fast / Ultrafast Diode, 200 V, 1 A, Single, 900 mV, 25 ns, 50 A

ESH2DFSH: Fast / Ultrafast Diode, 200 V, 2 A, Single, 960 mV, 25 ns, 80 A
Taiwan ESH2DFSH

Fast / Ultrafast Diode, 200 V, 2 A, Single, 960 mV, 25 ns, 80 A

ESH2PB-M3/84A: Standard Recovery Diode, 100 V, 2 A, Single, 980 mV, 25 ns, 50 A
Vishay ESH2PB-M3/84A

Standard Recovery Diode, 100 V, 2 A, Single, 980 mV, 25 ns, 50 A

ESH2PD-M3/84A: Fast / Ultrafast Diode, 200 V, 2 A, Single, 980 mV, 25 ns, 50 A
Vishay ESH2PD-M3/84A

Fast / Ultrafast Diode, 200 V, 2 A, Single, 980 mV, 25 ns, 50 A

ESH3DFSH: Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 25 ns, 132 A
Taiwan ESH3DFSH

Fast / Ultrafast Diode, 200 V, 3 A, Single, 950 mV, 25 ns, 132 A

ETD420N22P60HPSA1: Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Dual Gate
Infineon ETD420N22P60HPSA1

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Dual Gate

ETD480N22P60HPSA1: Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Dual Gate
Infineon ETD480N22P60HPSA1

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Dual Gate

ETT420N22P60HPSA1: Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Single Gate
Infineon ETT420N22P60HPSA1

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Single Gate

ETT480N22P60HPSA1: Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Single Gate
Infineon ETT480N22P60HPSA1

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Single Gate

ETT510N16P60HPSA1: SCR THYRISTOR, 1.6KV, 515A
Infineon ETT510N16P60HPSA1

SCR THYRISTOR, 1.6KV, 515A

ETT630N16P60HPSA1: SCR THYRISTOR, 1.6KV, 635A
Infineon ETT630N16P60HPSA1

SCR THYRISTOR, 1.6KV, 635A

F3L11MR12W2M1B74BOMA1: IGBT Module, Six Pack [Full Bridge], 100 A, 1.5 V, 175 °C, Module
Infineon F3L11MR12W2M1B74BOMA1

IGBT Module, Six Pack [Full Bridge], 100 A, 1.5 V, 175 °C, Module

F3L150R12W2H3B11BPSA1: IGBT Module, Three level Inverter, 75 A, 1.55 V, 500 W, 175 °C, Module
Infineon F3L150R12W2H3B11BPSA1

IGBT Module, Three level Inverter, 75 A, 1.55 V, 500 W, 175 °C, Module

F3L15R12W2H3B27BOMA1: IGBT Module, Three level Inverter, 20 A, 1.2 V, 150 W, 150 °C, Module
Infineon F3L15R12W2H3B27BOMA1

IGBT Module, Three level Inverter, 20 A, 1.2 V, 150 W, 150 °C, Module

F3L200R07PE4BOSA1: IGBT Module, Three level Inverter, 200 A, 1.55 V, 680 W, 150 °C, Module
Infineon F3L200R07PE4BOSA1

IGBT Module, Three level Inverter, 200 A, 1.55 V, 680 W, 150 °C, Module

F3L200R12W2H3B11BPSA1: IGBT Module, Three level Inverter, 100 A, 1.55 V, 600 W, 150 °C, Module
Infineon F3L200R12W2H3B11BPSA1

IGBT Module, Three level Inverter, 100 A, 1.55 V, 600 W, 150 °C, Module

F3L400R07W3S5B59BPSA1: IGBT Module, Six Pack, 200 A, 1.17 V, 150 °C, Module
Infineon F3L400R07W3S5B59BPSA1

IGBT Module, Six Pack, 200 A, 1.17 V, 150 °C, Module

F3L400R12PT4B26BOSA1: IGBT Module, Three level Inverter, 600 A, 1.75 V, 2.15 kW, 150 °C, Module
Infineon F3L400R12PT4B26BOSA1

IGBT Module, Three level Inverter, 600 A, 1.75 V, 2.15 kW, 150 °C, Module

F3L50R06W1E3B11BOMA1: IGBT Module, Three level Inverter, 75 A, 1.45 V, 175 W, 150 °C, Module
Infineon F3L50R06W1E3B11BOMA1

IGBT Module, Three level Inverter, 75 A, 1.45 V, 175 W, 150 °C, Module

F4100R12KS4BOSA1: IGBT Module, Four Pack, 130 A, 3.2 V, 660 W, 125 °C, Module
Infineon F4100R12KS4BOSA1

IGBT Module, Four Pack, 130 A, 3.2 V, 660 W, 125 °C, Module

F475R06W1E3BOMA1: IGBT Module, Four Pack, 100 A, 1.45 V, 275 W, 150 °C, Module
Infineon F475R06W1E3BOMA1

IGBT Module, Four Pack, 100 A, 1.45 V, 275 W, 150 °C, Module

FAM65CR51DZ1: MOSFET MODULES
Onsemi FAM65CR51DZ1

MOSFET MODULES

FAM65CR51DZ2: MOSFET MODULES
Onsemi FAM65CR51DZ2

MOSFET MODULES

FAM65V05DF1: INTELLIGENT POWER MODULES
Onsemi FAM65V05DF1

INTELLIGENT POWER MODULES

FBE22-06N1: Bridge Rectifier, Single Phase, 600 V, 22 A, i4-Pac, 5 Pins, 2.35 V
Ixys FBE22-06N1

Bridge Rectifier, Single Phase, 600 V, 22 A, i4-Pac, 5 Pins, 2.35 V

FCA47N60: Power MOSFET, N Channel, 600 V, 47 A, 0.07 ohm, TO-3P, Through Hole
Onsemi FCA47N60

Power MOSFET, N Channel, 600 V, 47 A, 0.07 ohm, TO-3P, Through Hole