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BSP125H6433XTMA1
Power MOSFET, N Channel, 600 V, 120 mA, 45 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:120mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: SIPMOS
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 120mA
- Drain Source On State Resistance: 45ohm
- Gate Source Threshold Voltage Max: 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.235 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
Rev. 2.2
**BSP125**
## **SIPMOS**[] **Power-Transistor**
## **Feature**
- N-Channel
- Enhancement mode
- Logic Level
- d _v_ /d _t_ rated
|_V_DS|600|V|
|---|---|---|
|_R_DS(on)|45|Ω|
|DS(on)<br>_I_D|0.12|A|
## PG-SOT223
- Pb-free lead plating; RoHS compliant
- . Qualified according to AEC Q101
• Halogenfree according to IEC61249221 (GS Halogen-Free e/RoHS ~ ce?
|j|~~e~~e|eee||
|---|---|---|---|
|j<br>**Parameter**|**Symbol**<br>~~e~~e|**Value**<br>eee|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>~~e~~e|0.12<br>0.1<br>eee|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|0.48||
|Reverse diode d_v_/d_t_<br>_I_S=0.12A,_V_DS=480V, d_i_/d_t_=200A/µs,_T_jmax=175°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS<br>~~a~~|±20<br>~~a~~|V|
|ESD Class(JESD22-A114-HBM)||1A (>250V, <500V)||
|Power dissipation<br>_T_A=25°C,_T_A=25|_P_tot<br>~~|~~|1.8<br>~~|~~|W|
|Operatingand storage temperature|_T_j ,_T_stg<br>~~|~~|-55... +150<br>~~|~~|°C|
|IEC climatic category; DIN IEC 68-1|~~a~~|55/150/56<br>~~a~~||
2012 - 11 - 27
Page 1
Rev. 2.2
**BSP125**
|**Thermal Characteristics**||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>|**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~||||
|Thermal resistance, junction - soldering point|_R_thJS|-|-|25|K/W|
|(Pin 4)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|-|115||
|@ 6 cm2cooling area1)||-|-|70||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=0.25mA<br>~~PT~~|_V_(BR)DSS<br>~~PT~~|600<br>~~PT~~<br>ft<br>ft|-<br>~~PT~~<br>ft|<br>ft|-<br>~~PT~~<br>||V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=94µA<br>ef|_V_GS(th)<br>ef|1.3<br>ft<br>ef<br>ft|1.9<br>ft|<br>ef<br>ft|2.3<br>|<br>ef||
|Zero gate voltage drain current<br>_V_DS=600V,_V_GS=0,_T_j=25°C<br>_V_DS=600V,_V_GS=0,_T_j=125°C<br>ae|_I_DSS<br>ae|-<br>-<br>ft<br>ae<br>ft|-<br>-<br>ft<br>ae<br>ft|0.1<br>5<br>ae|µA|
|Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>ef<br>Pt|_I_GSS<br>ef<br>Pt|-<br>ef<br>ft<br>ft<br>Pt|10<br>ef<br>ft<br>ft<br>|100<br>ef<br>|nA|
|Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.11A<br>ef<br>Pt|_R_DS(on)<br>ef<br>Pt|-<br>ft<br>ef<br>ft<br>Pt|26<br>ft<br>ef<br>ft<br>|60<br>ef<br>|Ω|
|Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.12A<br>Pt|_R_DS(on)<br>Pt|-<br>ft<br>Pt tf|25<br>ft<br>tf|45<br>tf||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2012 - 11 - 27
Page 2
**BSP125**
Rev. 2.2
|**Electrical Characteristics**,at<br>**Parameter**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|at_T_j= 25 °C, unless otherwise specified<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~|**Values**<br>**typ.**<br>~~|~~|**max.**<br>~~|~~|**Unit**<br>~~|~~|
|---|---|---|---|---|---|---|---|---|---|
|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|
|**Dynamic Characteristics**||||||||||
|Transconductance|_g_fs<br>_V_DS≥2*_I_D*_R_DS(on)max,<br>_I_D=0.1A<br>0.06<br>0.18<br>-<br>~~Sf]~~||||||||S|
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time|_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>100<br>150<br>_C_oss<br>-<br>8.2<br>12.3<br>_C_rss<br>-<br>3.2<br>4.8<br>_t_d(on)<br>_V_DD=300V,_V_GS=10V,<br>_I_D=0.13A,_R_G=6Ω<br>-<br>7.7<br>11.6<br>_t_r<br>-<br>14.4<br>21<br>_t_d(off)<br>-<br>20<br>30<br>_t_f<br>-<br>110<br>165<br>~~S~~E<br>~~=—~~l~~===~~||||||||pF<br>ns|
|**Gate Charge Characteristics**||||||||||
|Gate to source charge|||_Q_gs||_V_DD=400V,_I_D=0.13A|-|0.27|0.3|nC|
|Gate to drain charge|||_Q_gd|||-|2.3|3.5||
|Gate charge total|||_Q_g||_V_DD=400V,_I_D=0.13A,|-|4.4|6.6||
||||||_V_GS=0 to 10V|||||
|Gateplateau voltage|||_V_(plateau)||_V_DD=400V,_I_D=0.13A|-|3.44|-|V|
|**Reverse Diode**||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|-|-|0.12|A|
|forward current||||||||||
|Inv. diode direct current,pulsed<br>_I_SM||||||-|-|0.48||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=0.12A|-|0.8|1.2|V|
|Reverse recoverytime|||_t_rr||_V_R=300V,_I_F=_l_S,|-|156|235|ns|
|Reverse recoverycharge|||_Q_rr||d_i_F/d_t_=100A/µs|-|165|250|nC|
2012 - 11 - 27
Page 3
Rev. 2.2
**BSP125**
## **1 Power dissipation**
_P_ tot = _f_ ( _T_ A)
## **2 Drain current**
## _I_ D = _f_ ( _T_ A)
parameter: _V_ GS≥ 10 V
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BSP125<br>1.9 COCO COE<br>W<br>ee<br>1.6 FCEREEEEELEELELE PTT TET ET<br>1.4<br>rrFCECCNCECEEELE<br>1.2 PELE EERXELELLL EEL<br>teCCECCECNEAAHEE EEE<br>1 CCCCECee REC eee<br>0.8<br>PTEFCCC ETT EECENCCCELTEAE EE EET<br>0.6 PCCPitt EPR<br>PCE C CECEAA A<br>0.4<br>FCC EEEC<br>0.2<br>{ittCCEC CECEtert tt EAE<br>FOIE<br>0<br>0 20 40 60 80 100 120 °C 160<br>T A<br>tot<br>P<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25
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10 1 BSP125<br>A ee<br>fT ETE EEE ETT<br>10 0<br>t p = 270.0µs<br>re A ee<br> 1 ms<br>Ce INS<br>10 -1<br> 10 ms<br>es e S<br>a<br>10 -2<br>LUI EINE UT<br>a a Oe<br>lll DC<br>10 -3 a lll<br>10 [0] 10 [1] 10 [2] V 10 [3]<br>V DS<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>I D<br>**----- End of picture text -----**<br>
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BSP125<br>0.13<br>A<br>0.11 xq<br>0.090.1 PLTSERGEPTT TTEENTETNGeeeeeeeELLE\ NCEEELEEEELEE<br>0.080.07 PLETTTELE ELENENTE\EL EE<br>0.060.050.04 PTTPLL TTELLE ELLELLETTT] |<br>ALL<br>PLELELTE<br>0.03 ELE ELIA \<br>0.020.01 PLLPLELELELLEEELELLEEL ELLYLEA )<br>0 PLELELTEETLELELEL<br>0 20 40 60 80 100 120 °C 160<br>—_b T A<br>D<br>I<br>**----- End of picture text -----**<br>
## **4 Transient thermal impedance**
_Z_ thJA = _f_ ( _t_ p)
parameter : _D_ = _t_ p/ _T_
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10 2 BSP125<br>K/W ET eMC<br>a A coe a<br>10 1<br>recreate<br>BN 2a SN SA<br>10 0<br>D = 0.50<br>CMAN SURO OI PT 0.20 TP<br>0.10<br>a A a ME 0.05<br>10 -1<br>ON single pulse C 0.02 Ul<br>CATE LUTIELETT 0.01 MII<br>PRA a<br>10 -2 PEL TAME TTASM<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] s 10 [4]<br>t<br>—> p<br>thJC<br>Z<br>**----- End of picture text -----**<br>
2012 - 11 - 27
Page 4
## Rev. 2.2 **BSP125** Cinfinemo
## **6 Typ. drain-source on resistance**
## **5 Typ. output characteristic**
_I_ D = _f_ ( _V_ DS)
_R_ DS(on) = _f_ ( _I_ D)
parameter: _T_ j = 25 °C, _V_ GS
parameter: _T_ j = 25 °C, _V_ GS
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0.3 100<br>10V 2.6V<br>6.0V 2.8V<br>A 5.0V 3.0V<br>4.0V Of Ω MP] 3.2V<br>3.8V 3.6V<br>3.6V 4.0V<br>3.2V 5.0V<br>0.2<br>3.0V 6.0V<br>2.8V 60 10V<br>2.6V<br>0.15<br>f— Wii<br>40<br>0.1<br>KF Wn<br>20<br>0.05 Lyconan oaatl<br>Ato) LLL<br>0 0<br>0 1 2 3 4 5 6 7 8 V 10 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 A 0.5<br>VDS ID<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); ); V DS≥ 2 x ≥ 2 x 2 x I D x x R DS(on)max g fs = f( I D)<br>parameter: T j = 25 °C = 25 °C parameter: T j = 25 °C<br>0.5 0.4<br>| S P|<br>A<br>0.3<br>HE | ft<br>UA) 0.25 EAE<br>0.3<br>0.2<br>Ty) eee<br>0.2<br>0.15<br>. fo yw OfHAE<br>0.1<br>0.1<br>TE | 0.05<br>YL) fee<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 A 0.5<br>VGS ID<br>ID RDS(on)<br>ID gfs<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D== _f_ ( _V_ GS ); ); _V_ DS≥ 2 x ≥ 2 x 2 x _I_ D x x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C
2012 - 11 - 27
Page 5
Rev. 2.2
**BSP125**
## **(.) Typ. gate threshold voltage**
## **9 Drain-source on-state resistance**
_R_ DS(on) = _f_ ( _T_ j)
## _V_ GS(th) = _f_ ( _T_ j)
parameter : _I_ D = 0.12 A, _V_ GS = 10 V
parameter: _V_ GS = _V_ DS; _I_ D =94µA
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BSP125<br>170 FCCC Eoo 2.8<br>Ω<br>FCCC EEE a"<br>140 FEE EEE EEE Ω = 98%<br>120 CEPFCCC rrr 2 mLmw| |<br>FEE EEE a .<br>FOE EEE EEE SS<br>100<br>FCCCEEE 1.6 oF typ.<br>-CEEC E ECE —t <<<br>80<br> EEEEP aoe like<br>FCCP 1.2 ~o<br>60 2%<br>98%<br>ECFEC E EPECEET tC MEeL an<br>40 H E HE 0.8<br>TEE CEE ERAT<br>typ 0.4<br>20 iad [a] e [e] T<br>F TECCCCELLO LL Ty PPT PL Edy.<br>0 0<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160<br>—_ > T j —_b Tj<br>11 Typ. capacitances 12 Forward character. of reverse diode<br> = f ( V DS)) I F = f (VSD)<br>parameter: V GS=0,=0, f =1 MHz, T j = 25 °C = 25 °C parameter: T j<br>10 3 10 0 BSP125<br>=== B EERR R EER<br>pF A<br>fr | [| | | [ | ft ft ft ft lt tA et<br>CCE CELLELLE COP COT<br>10 2 \TREa 10 -1 TAa [wy<br>ee ee | [| TPA A<br>ee (|UP<br>f 10 1 A pV festCECNCEtT 10 -2 TCHMECCECCELEft ff | || |_|<br>SS SSS SSS SEE = == T j = 25 °C typ ===<br>a a Re CO ee Ee ee [ [| | |<br>a a a ee ee | a T j = 150 °C typ r {| [[|]<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 0 CEE 10 -3 fe<br>0 8 16 24 32 40 V 52 0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>—_> VDS —_ V SD<br>DS(on)<br>R VGS(th)<br>C I F<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
## _C_ = _f_ ( _V_ DS))
## parameter: _V_ GS=0,=0, _f_ =1 MHz, _T_ j = 25 °C = 25 °C
2012 - 11 - 27
Page 6
Rev. 2.2 **BSP125**
## **13 Typ. gate charge**
_V_ GS = _f_ ( _Q_ G); parameter: _V_ DS ,
## **14 Drain-source breakdown voltage**
## _V_ (BR)DSS = _f_ ( _T_ j)
ID = 0.12 A pulsed, _T_ j = 25 °C
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2012 - 11 - 27
Page 7
Rev. 2.2
**BSP125**
2012 - 11 - 27
Page 8
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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