BSP16T1G

BSP16T1G 

## High Voltage Transistors **PNP Silicon** 

## **Features** 

- These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant 

## **http://onsemi.com** 

**PNP SILICON HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS SURFACE MOUNT Rating Symbol Value Unit** Collector-Emitter Voltage VCEO --300 Vdc Collector-Base Voltage VCBO --350 Vdc COLLECTOR 2,4 Emitter-Base Voltage VEBO --6.0 Vdc Collector Current IC --100 mAdc BASE Total Device Dissipation @ TA = 25C PD 1.5 W 1 (Note 1) Storage Temperature Range PD --65 to C EMITTER 3 +150 Junction Temperature TJ 150 C ~~=e~~ **MARKING THERMAL CHARACTERISTICS DIAGRAM Characteristic Symbol Max Unit** Thermal Resistance, R θ JA 83.3 C/W **TO--223** AYW Junction--to--Ambient **CASE 318E** BT2 G Stresses exceeding Maximum Ratings may damage the device. Maximum **STYLE 1** G Ratings are stress ratings only. Functional operation above the Recommended ~~Fo.~~ 1 ~~=~~ Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x A = Assembly Location 0.059 in; mounting pad for the collector lead min. 0.93 sq. in. Y = Year W = Work Week BT2 =Device Code G = Pb--Free Package (Note: Microdot may be in either location) 

**ORDERING INFORMATION Device Package Shipping**[†] BSP16T1G TO--223 1000/Tape & Reel (Pb--Free) ~~———~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2010 **September, 2010 -- Rev. 7** 

**BSP16T1/D** 

## **BSP16T1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS** (TA= 25C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector -- Emitter Breakdown Voltage<br>(IC= --50 mAdc, IB= 0, L = 25 mH)|V(BR)CEO|--300|--|Vdc|
|Collector -- Base Breakdown Voltage<br>(IC= --100mAdc, IE= 0)|V(BR)CBO|--300|--|Vdc|
|Collector--Emitter Cutoff Current<br>(VCE= --250 Vdc, IB= 0)|ICES|--|--50|mAdc|
|Collector--Base Cutoff Current<br>(VCB= --280 Vdc, IE= 0)|ICBO|--|--1.0|mAdc|
|Emitter--Base Cutoff Current<br>(VEB= --6.0 Vdc, IC= 0)|IEBO|--|--20|mAdc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain<br>(VCE= -- 10 Vdc, IC= --50 mAdc)|hFE|30|120|--|
|Collector-Emitter Saturation Voltage<br>(IC= -- 50 mAdc, IB= -- 5.0 mAdc)|VCE(sat)|--|-- 2.0|Vdc|
|**DYNAMIC CHARACTERISTICS**|||||
|Current Gain -- Bandwidth Product<br>(VCE= -- 10 Vdc, IC= --10 mAdc, f = 30 MHz)|fT|15|--|MHz|
|Collector--Base Capacitance<br>(VCB= -- 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|--|15|pF|



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**2** 

**BSP16T1G** 

## **PACKAGE DIMENSIONS** 

**SOT--223 (TO--261)** CASE 318E--04 ISSUE N 

**==> picture [454 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>b1 NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCH.<br>4 MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>HE E A 1.50 1.63 1.75 0.060 0.064 0.068<br>1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004<br>b 0.60 0.75 0.89 0.024 0.030 0.035<br>b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>b D 6.30 6.50 6.70 0.249 0.256 0.263<br>e1 Ee 3.302.20 3.502.30 3.702.40 0.1300.087 0.1380.091 0.1450.094<br>it e e1 0.85 0.94 1.05 0.033 0.037 0.041<br>L 0.20 ------ ------ 0.008 ------ ------<br>C L1 1.50 1.75 2.00 0.060 0.069 0.078<br>θ H E 6.70 7.00 7.30 0.264 0.276 0.287<br>A θ 0  -- 1 0  0  -- 1 0 <br>0.08 (0003) STYLE 1:<br>jae, A1 L FEE L1 ———_———— PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>SOLDERING FOOTPRINT*<br>3.8<br>0.15<br>_ _I<br>2.0<br>0.079<br>roy<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>“EE!<br>1.5 SCALE 6:1<br>_ |— |  = inches [mm] <br>0.059<br>**----- End of picture text -----**<br>


*For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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**3**