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BSP170PH6327XTSA1
Power MOSFET, P Channel, 60 V, 1.9 A, 0.3 ohm, SOT-223, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-1.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.239ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.9A
- Drain Source On State Resistance: 0.3ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.327 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSP170P** ## **SIPMOS[®] Small-Signal-Transistor** ## **Features** - P-Channel - Enhancement mode ## **Product Summary** |_V_DS||-60||V| |---|---|---|---|---| |||||| |_R_DS(on),max||0.3||Ω| |||||| |_I_D||-1.9||A| - Avalanche rated - d _v_ /d _t_ rated **==> picture [52 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PG-SOT223<br>**----- End of picture text -----**<br> - Pb-free lead plating; RoHS compliant - Qualified according to AEC Q101 |• Pb-free lead plating; RoHS compliantplating; RoHS compliant; RoHS compliant<br>• Qualified according to AEC Q101|Drain Pin<br>2, 4|Drain Pin<br>2, 4|Drain Pin<br>2, 4|Drain Pin<br>2, 4|||PG-SOT223|PG-SOT223|PG-SOT223|PG-SOT223|| |---|---|---|---|---|---|---|---|---|---|---|---| |• Qualified according to AEC Q101<br>• Halogenfree according to IEC61249221<br>Gate <br>ZS<br>RoHS,<br>(GS) Halogen-Free fect* S/|Pin<br>1&<br>SourcePin 3||||||i|;||i|“| ||||||||||||| |**Type**<br>**Package**<br>**Tape and reel information**||||**Marking**||**Lead free**||||**Packing**|| |BSP170P<br>PG-SOT223<br>H6327: 1000pcs/reel||||BSP170P||Yes||||Non Dry|Non Dry| **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**<br>**steady state**<br>~~|~~<br>~~|~~|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_T_A=25 °C<br>~~ee~~|A<br>-1.9<br>-1.5<br>-7.6<br>~~ee~~<br>~~ee~~<br>~~ee~~|A| |||_T_A=70 °C<br>~~ee~~||| |Pulsed drain current|_I_D,pulse<br>~~ee~~|_T_A=25 °C<br>~~ee~~||| |Avalanche energy, single pulse|_E_AS|_I_D=1.9 A,_R_GS=25Ω|mJ<br>70|mJ| |Avalanche energy, periodic limited by<br>Tjmax|_E AR_<br>~~i~~|~~i~~|0.18<br>~~i~~|| |Reverse diode d_v_/d_t_|d_v_/d_t_|_I_D=1.9 A,_V_DS=48 V,<br>d_i_/d_t_=-200 A/µs,<br>_T_j,max=150 °C|kV/µs<br>-6|kV/µs| |Gate source voltage|_V_GS<br>~~a~~|~~a~~|V<br>±20<br>~~a~~|V| |Power dissipation|_P_tot<br>~~ee~~|_T_A=25 °C<br>~~ee~~|W<br>1.8<br>~~ee~~|W| |Operating and storage temperature|_T_j,_T_stg<br>~~a~~|~~a~~|°C<br>-55 ... 150<br>~~a~~|°C| |ESD class|~~ee~~|JESD22-C101 (HBM)<br>~~ee~~|1A (250V to 500V)<br>~~ee~~|| |Soldering temperature|~~a~~|~~a~~|260 °C<br>~~a~~|| |IEC climatic category; DIN IEC 68-1|~~ee~~|~~ee~~|55/150/56<br>~~ee~~|| Rev 2.5 3 20 12 - 11 -26 page 1 |~~Cinfineon~~||||||| |---|---|---|---|---|---|---| |~~Cinfineon~~|||||**BSP170P**|| |~~Cinfineon~~||||||| |**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Thermal characteristics**||||||| |Thermal resistance,<br>junction -soldering point|_R_thJS||-|-|20|K/W| |SMD version, device on PCB:|_R_thJA|minimal footprint|-|-|110|K/W| |||6 cm2cooling area1)|-|-|70|| **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified |**Static characteristics**||||||| |---|---|---|---|---|---|---| |Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=-250 µA|-60|-|-|V| |Gate threshold voltage|_V_GS(th)|_V_DS=_V_GS,_I_D=-250 µA|-2.1|-3|-4|| |Zero gate voltage drain current|_I_DSS|_V_DS=-60 V,_V_GS=0 V,<br>_T_j=25 °C|-|-0.1|-1|µA| |||_V_DS=-60 V,_V_GS=0 V,<br>_T_j=125 °C|-|-10|-100|| |Gate-source leakage current|_I_GSS|_V_GS=-20 V,_V_DS=0 V|-|-10|-100|nA| |Drain-source on-state resistance|_R_DS(on)|_V_GS=-10 V,_I_D=-1.9 A|-|239|300|mΩ| |Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-1.9 A|1.3|2.6|-|S| 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.5 3 20 12 - 11 -26 page 2 |~~Cinfineon~~||||||| |---|---|---|---|---|---|---| |~~Cinfineon~~|||||**BSP170P**|| |~~Cinfineon~~||||||| |**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Dynamic characteristics**||||||| |Input capacitance|_C_iss||-|328|410|pF| |Output capacitance|_C_oss|_V_GS=0 V,_V_DS=-25 V,<br>_f_=1 MHz|-|105|135|| |Reverse transfer capacitance|_C_rss||-|38|48|| |Turn-on delay time|_t_d(on)||-|14|21|ns| |Rise time|_t_r|_V_DD=-30 V,_V_GS=-|-|28|42|| |||10 V,_I_D=-1.9 A,||||| |Turn-off delay time|_t_d(off)|_R_G=6Ω|-|92|138|| |Fall time|_t_f||-|60|90|| |Gate Charge Characteristics||||||| |Gate to source charge|_Q_gs||-|-1.4|-1.9|nC| |Gate to drain charge|_Q_gd|_V_DD=-48 V,_I_D=-1.9 A,|-|-4.9|-7.4|| |Gate charge total|_Q_g|_V_GS=0 to -10 V|-|-10|-14|| |Gate plateau voltage|_V_plateau||-|-4.34|-|V| |**Reverse Diode**||||||| |Diode continuous forward current|_I_S||-|-|-1.98|A| |||_T_A=25 °C||||| |Diode pulse current|_I_S,pulse||-|-|-7.6|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=-1.9 A,<br>_T_j=25 °C|-|-0.83|-1.1|V| |Reverse recovery time|_t_rr||-|36|54|ns| |||_V_R=30 V,_I_F=|_I_S|,||||| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|41|62|nC| Rev 2.5 3 20 12 - 11 -26 page 3 **BSP170P** ## **1 Power dissipation** _P_ tot=f( _T_ A) ## **2 Drain current** _I_ D=f( _T_ A); | _V_ GS|≥10 V **==> picture [503 x 619] intentionally omitted <==** **----- Start of picture text -----**<br> 2.1<br>1.8<br>1.8<br>1.5<br>1.5<br>1.2<br>1.2<br>0.9<br>0.9<br>0.6 0.6<br>0.3 0.3<br>0 NES 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D=f( V DS); T A=25 °C [1)] ; D =0 Z thJA=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [1] 10 µs 10 [2]<br>100 µs<br>limited by on-state 0.5<br>resistance 1 ms<br>10 ms<br>0.2<br>10 [0] 10 [1]<br>100 ms 0.1<br>0.05<br>0.02<br>DC<br>10 [-1] 10 [0] 0.01<br>single pulse<br>10 [-2] 10 [-1]<br>0.1 1 10 100 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>-V DS [V] t p [s]<br>Rev 2.5 3 page 4 20 12 - 11 -26<br>aT ail<br> [W] [A]<br> tot -I D<br>P<br> [A] [K/W]<br> D<br>-I<br> thJS<br>Z<br>**----- End of picture text -----**<br> **BSP170P** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [181 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900<br>800<br>700<br>-4 V<br>600<br>-4.5 V<br>500<br>-5 V<br>400<br>-5.5 V<br>-6 V<br>300 -7 V<br>-10 V<br>200 -20 V<br>100<br>0<br>0 1 2 3<br>-I D [A] [A]<br>]<br>Ω<br> [m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [432 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 7 1000<br>-7 V<br>-20 V 900<br>6 -6V<br>-10 V<br>-5.5 V 800<br>5<br>700<br>-4 V<br>600<br>4<br>-5 V -4.5 V<br>500<br>3 -5 V<br>400<br>-5.5 V<br>-6 V<br>2 -4.5 V 300 -7 V<br>-10 V<br>200 -20 V<br>1 -4V<br>100<br>0 0<br>0 1 2 3 4 5 0 1 2 3<br>-V DS [V] -I D [A] [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>3 3.5<br>3<br>2.5<br>2<br>2<br>1.5<br>1<br>1<br>125 °C 0.5<br>25 °C<br>0 0<br>0 1 2 3 4 5 0 0.5 1 1.5 2 2.5<br>-V GS [V] -I D [A]<br>]<br>Ω<br> [m<br> [A]<br> D<br>-I<br> DS(on)<br>R<br> [A] [S]<br> D fs<br>-I g<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j Rev 2.5 3 20 12 - 11 -26 page 5 **BSP170P** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=-1.9 A; _V_ GS=-10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-250 µA **==> picture [471 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>550 5<br>500<br>450 max.<br>4<br>400<br>350 98 % typ.<br>3<br>300<br>250 typ.<br>2<br>200 min.<br>150<br>1<br>100<br>50<br>0 0<br>-60 -20 20 60 100 140 -60 -20 20 60 100 140<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br>C =f( V DS); V GS=0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [3] 10 [1]<br>150 ° C, typ<br>25 °C, 98%<br>Ciss<br>10 [0] 150 °C, 98% We<br>Coss<br>10 [2]<br>Crss 10 [-1]<br>25 °C, typ<br>10 [1] SS 10 [-2]<br>0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3<br>-V DS [V] -V SD [V]<br>3 page 6 20 12 - 11 -26<br>]<br>[m Ω [V]<br> GS(th)<br> DS(on) -V<br>R<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> Rev 2.5 3 **BSP170P** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 Ω parameter: _T_ j(start) **==> picture [211 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>10 [0] 25 ° C<br>100 °C<br>125 °C<br>\<br>10 [-1]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>t AV [µs]<br> [A]<br> AV<br>-I<br>**----- End of picture text -----**<br> ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=-1.9 A pulsed parameter: _V_ DD **==> picture [208 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>j<br>10 30 V<br>12 V<br>48 V<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15<br>Q gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ BR(DSS)=f( _T_ j); _I_ D=-250 µA **==> picture [194 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>65<br>60<br>55<br>50<br>-60 -20 20 60 100 140<br>T j [°C]<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br> Rev 2.5 3 20 12 - 11 -26 page 7 **BSP170P** ## **Package Outline** ## **SOT-223: Outline** **==> picture [190 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> Footprint<br>|],<br>Operating and storage temperature 14 — Oe<br>**----- End of picture text -----**<br> **==> picture [47 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> Packaging<br>Tape<br>**----- End of picture text -----**<br> Dimensions in mm Rev 2.5 3 20 12 - 11 -26 page 8 **BSP170P** Rev 2.5 3 20 12 - 11 -26 page 9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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