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BSP171PH6327XTSA1
Power MOSFET, P Channel, 60 V, 1.9 A, 0.3 ohm, SOT-223, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-1.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 1.9A
- Drain Source On State Resistance: 0.3ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.285 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSP171P** ## **SIPMOS[®] Small-Signal-Transistor** ## **Features** - P-Channel - Enhancement mode ## **Product Summary** |_V_DS||-60||V| |---|---|---|---|---| |||||| |_R_DS(on),max||0.3||Ω| |||||| |_I_D||-1.9||A| - Logic level - Avalanche rated - d _v_ /d _t_ rated - Pb-free lead plating; RoHS compliant **==> picture [56 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PG-SOT223<br>**----- End of picture text -----**<br> - Qualified according to AEC Q101 - Halogenfree according to IEC61249221 ||(GS) Halogen-Free|i _<br>Halogen-Free aA|!|3| |---|---|---|---|---| |||||**Packaging**| |**Type**|**Package**|**Tape and Reel Information**|**Marking**|| |||||Non dry| |BSP171P|PG-SOT223|H6327: 1000 pcs/reel|BSP171P|| |**Parameter**|**Symbol **|**Conditions**<br>~~—__~~<br>~~—__~~|**Unit**<br>**Value**<br>**steady state**<br>~~—__~~<br>~~—__~~|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_T_A=25 °C1)<br>~~—__~~<br>~~ee~~|A<br>-1.9<br>-1.5<br>-7.6<br>~~—__~~<br>~~ee~~<br>~~es~~<br>~~es~~|A| |||_T_A=70 °C1)<br>~~es~~||| |Pulsed drain current|_I_D,pulse<br>~~_~~<br>~~__~~|_T_A=25 °C<br>~~es~~||| |Avalanche energy, single pulse|_E_AS<br>~~__~~<br>~~rf~~<br>~~|_|~~|_I_D=-1.9 A,_R_GS=25Ω<br>~~rf~~<br>~~|_|~~|mJ<br>70<br>~~rf~~<br>~~|_|~~|mJ| |Reverse diode d_v_/d_t_|d_v_/d_t_<br>~~__~~<br>~~rf~~<br>~~|_|~~|_I_D=-1.9 A,<br>_V_DS=-48 V,<br>d_i_/d_t_=-200 A/µs,<br>_T_j,max=150 °C<br>~~rf~~<br>~~|_|~~|kV/µs<br>-6<br>~~rf~~<br>~~|_|~~|kV/µs| |Gate source voltage|_V_GS<br>~~|_|~~|~~|_|~~|V<br>±20<br>~~|_|~~|V| |Power dissipation|_P_tot<br>~~|_|~~<br>~~Ss~~|_T_A=25 °C1)<br>~~|_|~~<br>~~Ss~~|W<br>1.8<br>~~|_|~~<br>~~Ss~~|W| |Operating and storage temperature|_T_j,_T_stg<br>~~|_|~~<br>~~Ss~~<br>~~a~~|~~|_|~~<br>~~Ss~~<br>~~a~~|°C<br>-55 ... 150<br>~~|_|~~<br>~~Ss~~<br>~~a~~|°C| |IEC climatic category; DIN IEC 68-1|~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|55/150/56<br>~~a~~<br>~~ee~~|| |ESD Class; JESD22-A114-HBM|~~ee~~|~~ee~~|Class 1a<br>~~ee~~|| 20 12 - 11 -26 Rev 2. 7 page 1 |**BSP171P**<br>**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Thermal characteristics**<br>**Values**<br>Gatineon~~es~~<br>~~ee ee~~| |---| |Thermal resistance,<br>junction - soldering point<br>_R_thJS<br>-<br>-<br>25<br>K/W| |Thermal resistance,<br>junction - ambient<br>_R_thJA<br>minimal footprint,<br>steady state<br>-<br>-<br>110| |6 cm2cooling area1),<br>steady state<br>-<br>-<br>70| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified| |**Static characteristics**| |Drain-source breakdown voltage<br>_V_(BR)DSS _V_GS=0 V,_I_D=-250 µA<br>-60<br>-<br>-<br>V<br>Gate threshold voltage<br>_V_GS(th)<br>_V_DS=_V_GS,<br>_I_D=-460 µA<br>-1<br>-1.5<br>-2<br>Zero gate voltage drain current<br>_I_DSS<br>_V_DS=-60 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>-0.1<br>-1<br>µA<br>_V_DS=-60 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>-10<br>-100<br>Gate-source leakage current<br>_I_GSS<br>_V_GS=-20 V,_V_DS=0 V<br>-<br>-10<br>-100<br>nA<br>Drain-source on-state resistance<br>_R_DS(on)<br>_V_GS=-4.5 V,<br>_I_D=-1.5 A<br>-<br>0.3<br>0.45<br>Ω<br>_V_GS=-10 V,<br>_I_D=-1.9 A<br>-<br>0.21<br>0.3<br>Transconductance<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-1.5 A<br>1.4<br>2.7<br>-<br>S<br>1)2<br>~~a ee~~<br>~~ee ee~~<br>~~p|tT~~<br>~~care~~<br>~~pt~~<br>~~| |~~<br>~~a ee~~<br>~~ee ee~~<br>~~een~~<br>~~pf~~<br>~~| |~~<br>~~pi~~<br>~~otTt~~| 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 20 12 - 11 -26 Rev 2. 7 page 2 ||Gafineon||||||| |---|---|---|---|---|---|---|---| ||Gafineon|||||**BSP171P**|| ||||||||| ||**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| |||||**min.**|**typ.**|**max.**|| ||**Dynamic characteristics**||||||| |Input capacitance<br>_C_iss<br>-<br>365<br>460<br>pF<br>Output capacitance<br>_C_oss<br>-<br>105<br>135<br>Reverse transfer capacitance<br>_C_rss<br>-<br>40<br>55<br>Turn-on delay time<br>_t_d(on)<br>-<br>6<br>8<br>ns<br>Rise time<br>_t_r<br>-<br>25<br>33<br>Turn-off delay time<br>_t_d(off)<br>-<br>208<br>276<br>Fall time<br>_t_f<br>-<br>87<br>130<br>Gate Charge Characteristics2)<br>_V_GS=0 V,<br>_V_DS=-25 V,_f_=1 MHz<br>_V_DD=-25 V,<br>_V_GS=-10 V,<br>_I_D=-1.9 A,_R_G=6Ω<br>~~oe~~|||||||| ||Gate to source charge|_Q_gs||-|-1.2|-1.6|nC| ||Gate to drain charge|_Q_gd|_V_DD=-48 V,_I_D=1.9 A,|-|-5|-7|| ||Gate charge total|_Q_g|_V_GS=0 to -10 V|-|-13|-20|| ||Gate plateau voltage|_V_plateau||-|-3|-|V| ||Output charge|_Q_oss|_V_DD=-15 V,_V_GS=0 V|-|-5|-7|| |**Reverse Diode**||||||| |---|---|---|---|---|---|---| |Diode continuous forward current|_I_S|_T_A=25 °C|-|-|-1.9|A| |Diode pulse current|_I_S,pulse||-|-|-7.6|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=1.9 A,<br>_T_j=25 °C|-|-0.84|-1.1|V| |Reverse recovery time|_t_rr|_V_R=-30 V,_I_F=|_I_S|,<br>d_i_F/d_t_=100 A/µs|-|80|120|ns| |Reverse recovery charge|_Q_rr||-|-125|-190|nC| 2) See figure 16 for gate charge parameter definition 20 12 - 11 -26 Rev 2. 7 page 3 **BSP171P** ## **1 Power dissipation** _P_ tot=f( _T_ A) ## **2 Drain current** _I_ D=f( _T_ A); | _V_ GS|≥10 V **==> picture [482 x 644] intentionally omitted <==** **----- Start of picture text -----**<br> 2 2<br>1.5 1.5<br>1 1<br>0.5 0.5<br>0 ND 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D=f( V DS); T A=25 °C [1)] ; D =0 Z thJA=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [1] 10 [2]<br>10 µs<br>100 µs<br>1 ms 0.5<br>10 ms<br>0.2<br>10 [0] 10 [1]<br>100 ms<br>0.1<br>0.05<br>limited by on-state 0.02<br>resistance<br>DC<br>10 [-1] 10 [0] 0.01<br>single pulse<br>10 [-2] AR 10 [-1]<br>0.1 1 10 100 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>-V DS [V] t p [s]<br>Rev 2. 7 page 4 20 12 - 11 -26<br> [W] [A]<br> tot -I D<br>P<br> [A] [K/W]<br> D<br>-I<br> thJS<br>Z<br>**----- End of picture text -----**<br> Rev 2. 7 **BSP171P** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** **==> picture [467 x 651] intentionally omitted <==** **----- Start of picture text -----**<br> I D=f( V DS); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>5 600<br>-5.5 V -4.5 V<br>-4 V<br>-5 V<br>-3 V<br>-10 V 500<br>4<br>-3.5 V<br>400<br>-4 V<br>3<br>-3.5 V -4.5 V<br>300 -5 V<br>-5.5 V<br>2<br>-10 V<br>200<br>-3 V<br>1<br>100<br>-2.5 V<br>0 Ee 0<br>0 1 2 3 4 5 0 1 2 3 4<br>-V DS [V] -I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>6 5<br>5<br>4<br>4<br>3<br>3<br>2<br>2<br>1<br>1<br>C °125 C °25<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4<br>-V GS [V] -I D [A]<br>]<br>Ω<br> [m<br> [A]<br> D<br>-I<br> DS(on)<br>R<br> [A] [S]<br> D fs<br>-I g<br>**----- End of picture text -----**<br> 20 12 - 11 -26 Rev 2. 7 page 5 **BSP171P** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=-1.9 A; _V_ GS=-10 V **==> picture [226 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>400<br>98 %<br>300<br>200<br>typ.<br>100<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>]<br>Ω<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-460 µA **==> picture [226 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2.5<br>2 max.<br>1.5 typ.<br>min.<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> GS(th)<br>-V<br>**----- End of picture text -----**<br> ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [224 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>Ciss<br>Coss<br>10 [2]<br>Crss<br>10 [1]<br>0 10 20 30<br>-V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br> **==> picture [224 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1] 25 ° C, typ<br>150 °C, typ 150 °C, 98%<br>10 [0] 25 ° C, 98%<br>10 [-1]<br>10 [-2]<br>0 0.5 1 1.5<br>-V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br> 20 12 - 11 -26 Rev 2. 7 page 6 **BSP171P** ## **13 Avalanche characteristics** ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=-1.9 A pulsed parameter: _V_ DD _I_ AS=f( _t_ AV); _R_ GS=25 Ω parameter: _T_ j(start) **==> picture [462 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 10 12<br>0.5 VBR(DSS)<br>10<br>C °25 8 0.2 VBR(DSS)<br>0.8 VBR(DSS)<br>1 C °100 6<br>C °125<br>4<br>2<br>0.1 0<br>1 10 100 1000 0 5 10 15<br>t AV [µs] Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T j); ); I D=-1 mA=-1 mA<br>70<br>V GS<br>65 Q g<br>60<br>55<br>V<br>gs(th)<br>50<br>45<br>Q g(th) Q sw Q gate<br>40 Q gs Q gd<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [A] [V]<br> AV GS<br>-I V<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=-1 mA=-1 mA 20 12 - 11 -26 Rev 2. 7 page 7 **BSP171P** ## **Package Outline** ## **SOT-223: Outline** **Footprint** **==> picture [51 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Packaging<br>Tape<br>**----- End of picture text -----**<br> Dimensions in mm 20 12 - 11 -26 Rev 2. 7 page 8 **BSP171P** 20 12 - 11 -26 Rev 2. 7 page 9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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