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BSP220,115
Power MOSFET, P Channel, 200 V, 200 mA, 12 ohm, SOT-223, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-200mA; Drain Source Voltage Vds:-200V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Qualification: -
- Power Dissipation: 1.5W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 200mA
- Drain Source On State Resistance: 12ohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.298 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **DISCRETE SEMICONDUCTORS** **==> picture [274 x 33] intentionally omitted <==** **----- Start of picture text -----**<br> DATA SHEET<br>**----- End of picture text -----**<br> ## **BSP220** P-channel enhancement mode vertical D-MOS transistor File under Discrete Semiconductors, SC13b April 1995 **Philips Semiconductors** ## **P-channel enhancement mode vertical D-MOS transistor** ## **BSP220** ## **FEATURES** - Low RDS(on) - Direct interface to C-MOS, TTL, etc. - High-speed switching - No secondary breakdown. ## **DESCRIPTION** P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**| |---|---|---|---|---| |−VDS|drain-source voltage||200|V| |−ID|drain current|DC value|225|mA| |RDS(on)|drain-source on-resistance|−ID= 200 mA<br>−VGS= 10 V|12|Ω| |−VGS(th)|gate-source threshold<br>voltage||2.8|V| ## **PIN CONFIGURATION** ## **PINNING - SOT223** |**PIN**|**DESCRIPTION**| |---|---| |1<br>2<br>3<br>4|gate<br>drain<br>source<br>drain| **==> picture [242 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 4 d<br>g<br>1 2 3 s<br>Top view MAM121<br>**----- End of picture text -----**<br> Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP220 ## **LIMITING VALUES** In accordance with the Absolute Maximum System (IEC 134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |−VDS|drain-source voltage||−|200|V| |±VGSO|gate-source voltage|open drain|−|20|V| |−ID|drain current|DC value|−|225|mA| |−IDM|drain current|peak value|−|600|mA| |Ptot|total power dissipation|up to Tamb= 25°C (note 1)|−|1.5|W| |Tstg|storage temperature range||−65|150|°C| |Tj|junction temperature||−|150|°C| ## **Note** 1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm[2] . ## **THERMAL RESISTANCE** |**SYMBOL**|**PARAMETER**|**VALUE**|**UNIT**| |---|---|---|---| |Rth j-a|from junction to ambient (note 1)|83.3|K/W| ## **Note** 1. Device mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm[2] . April 1995 3 Philips Semiconductors ## P-channel enhancement mode vertical D-MOS transistor BSP220 ## **CHARACTERISTICS** T = 25 ° j |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |−V(BR)DSS|drain-source breakdown voltage|−ID= 10µA<br>VGS= 0|200|−|−|V| |−IDSS|drain-source leakage current|−VDS= 160 V<br>VGS= 0|−|−|1|µA| |±IGSS|gate-source leakage current|±VGS= 20 V<br>VDS= 0|−|−|100|nA| |−VGS(th)|gate-source threshold voltage|−ID= 1 mA<br>VGS= VDS|0.8|−|2.8|V| |RDS(on)|drain-source on-resistance|−ID= 200 mA<br>−VGS= 10 V|−|10|12|Ω| |Yfs|transfer admittance|−ID= 200 mA<br>−VDS= 25 V|100|200|−|mS| |Ciss|input capacitance|−VDS= 25 V<br>VGS= 0<br>f = 1 MHz|−|65|90|pF| |Coss|output capacitance|−VDS= 25 V<br>VGS= 0<br>f = 1 MHz|−|20|30|pF| |Crss|feedback capacitance|−VDS= 25 V<br>VGS= 0<br>f = 1 MHz|−|6|15|pF| |**Switching times (see Figs**2**and**3**)**||||||| |ton|turn-on time|−ID= 250 mA<br>−VDD= 50 V<br>−VGS= 0 to 10 V|−|5|20|ns| |toff|turn-off time|−ID= 250 mA<br>−VDD= 50 V<br>−VGS= 0 to 10 V|−|20|30|ns| April 1995 4 Philips Semiconductors ## P-channel enhancement mode vertical D-MOS transistor ## BSP220 **==> picture [242 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage VDD = −50 V<br>0 V<br>ID<br>−10 V<br>50 Ω<br>MBB689<br>**----- End of picture text -----**<br> Fig.2 Switching time test circuit. **==> picture [242 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 10 %<br>INPUT<br>90 %<br>10 %<br>OUTPUT<br>90 %<br>ton toff<br>MBB690<br>**----- End of picture text -----**<br> Fig.3 Input and output waveforms. **==> picture [242 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> MBB693<br>2<br>handbook,<br>Ptot<br>(W)<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 50 100 150 200<br>Tamb (°C)<br>**----- End of picture text -----**<br> **==> picture [213 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.4 Power derating curve.<br>**----- End of picture text -----**<br> **==> picture [241 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MDA706<br>−1<br>handbook, halfpage VGS = −10 V<br>ID<br>(A) −6 V<br>−0.8<br>−0.6 −5 V<br>−0.4<br>−4 V<br>−0.2<br>−3 V<br>0<br>0 −5 −10 −15 −20 −25<br>VDS (V)<br>**----- End of picture text -----**<br> Fig.5 Typical output characteristics; Tj = 25 °C. April 1995 5 Philips Semiconductors ## P-channel enhancement mode vertical D-MOS transistor ## BSP220 **==> picture [241 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MDA707<br>−1<br>handbook, halfpage<br>ID<br>(A)<br>−0.8<br>−0.6<br>−0.4<br>−0.2<br>0<br>0 −2 −4 −6 −8 −10<br>VGS (V)<br>**----- End of picture text -----**<br> **==> picture [213 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.6 Typical transfer characteristic; −VDS = 10 V;<br>T = 25 °C.<br>j<br>**----- End of picture text -----**<br> **==> picture [241 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MDA708<br>−10 [3]<br>handbook, halfpage VGS = −10 V<br>−5 V<br>ID<br>(mA) −4 V<br>−10 [2]<br>−10<br>8 12 16 20 24 28<br>RDSon (Ω)<br>**----- End of picture text -----**<br> **==> picture [214 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.7 Typical on-resistance as a function of drain<br>current; Tj = 25 °C.<br>**----- End of picture text -----**<br> **==> picture [242 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MDA734<br>160<br>handbook, halfpage<br>C<br>(pF)<br>120<br>80<br>Ciss<br>40<br>Coss<br>Crss<br>0<br>0 −5 −10 −15 −20 −25<br>VDS (V)<br>**----- End of picture text -----**<br> **==> picture [213 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.8 Typical capacitances as a function of<br>drain-source voltage; VGS = 0; f = 1 MHz;<br>T = 25 °C.<br>j<br>**----- End of picture text -----**<br> **==> picture [242 x 188] intentionally omitted <==** **----- Start of picture text -----**<br> MDA710<br>2.5<br>handbook, halfpage<br>k<br>2<br>1.5<br>1<br>0.5<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br> **==> picture [214 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.9 Temperature coefficient of drain-source<br>on-resistance;<br>k = ---------------------------------------------- RDS (on) [at T] j ;<br>RDS (on) [at 25] [°][C]<br>typical RDS(on) at −200 mA/−10 V.<br>**----- End of picture text -----**<br> April 1995 6 Philips Semiconductors ## P-channel enhancement mode vertical D-MOS transistor ## BSP220 **==> picture [242 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> MDA711<br>1.1<br>handbook, halfpage<br>k<br>1<br>0.9<br>0.8<br>0.7<br>−50 0 50 100 Tj (°C) 150<br>Fig.10 Temperature coefficient of gate-source<br>threshold voltage;<br>k = ------------------------------------------- VGS (th) [at T] j - ;<br>VGS (th) [at 25] [°][C]<br>typical -VGS(th) at -1 mA.<br>**----- End of picture text -----**<br> April 1995 7 Philips Semiconductors BSP220 P-channel enhancement mode vertical D-MOS transistor ## **PACKAGE OUTLINE** **Plastic surface mounted package; collector pad for good heat transfer; 4 leads** **==> picture [36 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT223<br>**----- End of picture text -----**<br> **==> picture [495 x 590] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>c<br>y<br>HE v M A<br>b1<br>4<br>Q<br>A<br>A1<br>1 2 3 Lp<br>e1 bp w M B detail X<br>e<br>0 2 4 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y<br>1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95<br>mm 4.6 2.3 0.2 0.1 0.1<br>1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br>96-11-11<br> SOT223<br>97-02-28<br>**----- End of picture text -----**<br> April 1995 8 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP220 ## **DEFINITIONS** |**DEFINITIONS**|**DEFINITIONS**| |---|---| ||| |**Data sheet status**|| |Objective specifcation|This data sheet contains target or goal specifcations for product development.| |Preliminary specifcation|This data sheet contains preliminary data; supplementary data may be published later.| |Product specifcation|This data sheet contains fnal product specifcations.| |**Application information**|| |Where application information is given, it is advisory and does not form part of the specifcation.|| ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 9 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP220 ## **NOTES** April 1995 10 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP220 ## **NOTES** April 1995 11 ## **Philips Semiconductors – a worldwide company** **Argentina:** see South America **Australia:** 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 **Austria:** Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 **Belarus:** Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 **Belgium:** see The Netherlands **Brazil:** see South America **Bulgaria:** Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 **Canada:** PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 **China/Hong Kong:** 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 **Colombia:** see South America ## **Czech Republic:** see Austria **Denmark:** Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 **Finland:** Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 **France:** 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 **Germany:** Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 **Greece:** No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 **Hungary:** see Austria **India:** Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 **Indonesia:** see Singapore **Ireland:** Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 **Israel:** RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 **Italy:** PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 **Japan:** Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 **Korea:** Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 **Malaysia:** No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 **Mexico:** 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 **Middle East:** see Italy **Netherlands:** Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 **New Zealand:** 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 **Norway:** Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 **Philippines:** Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 **Poland:** Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 **Portugal:** see Spain **Romania:** see Italy **Russia:** Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 **Singapore:** Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 **Slovakia:** see Austria **Slovenia:** see Italy **South Africa:** S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 **South America:** Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 **Spain:** Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 **Sweden:** Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 **Switzerland:** Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 **Taiwan:** Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 **Thailand:** PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 **Turkey:** Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 **Ukraine** : PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 **United Kingdom:** Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 **United States:** 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 **Uruguay:** see South America **Vietnam:** see Singapore **Yugoslavia:** PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 **For all other countries apply to:** Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1997 **Internet:** http://www.semiconductors.philips.com SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [204 x 36] intentionally omitted <==** Date of release: April 1995 137107/00/01/pp12 Document order number: 9397 750 02482
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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