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TOSHIBA

TOSHIBA logo

Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.

Found 1527 products. Showing up to 30 products per page (51 pages).

Subcategories

Semiconductors - Discretes

Switches & Relays

Price range

DSF01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 500 mV, 2 A, 125 °C
Toshiba DSF01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 500 mV, 2 A, 125 °C

0.046 EUR/unit
DSR01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C
Toshiba DSR01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C

0.043 EUR/unit
DSR01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C
Toshiba DSR01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C

0.043 EUR/unit
GT30N135SRA,S1E(S: IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
Toshiba GT30N135SRA,S1E(S

IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins

2.18 EUR/unit
GT50J325: IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins
Toshiba GT50J325

IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins

8.37 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.071 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.029 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.071 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.029 EUR/unit
HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.104 EUR/unit
HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.104 EUR/unit
HN2S03FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba HN2S03FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.077 EUR/unit
HN2S03FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba HN2S03FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.077 EUR/unit
HN4B102J(TE85L,F): Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W
Toshiba HN4B102J(TE85L,F)

Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W

0.193 EUR/unit
JDH2S02SL,L3F(T: Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C
Toshiba JDH2S02SL,L3F(T

Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C

0.072 EUR/unit
JDH2S02SL,L3F(T: Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C
Toshiba JDH2S02SL,L3F(T

Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C

0.07 EUR/unit
MT3S111(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount
Toshiba MT3S111(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount

0.285 EUR/unit
RFM04U6P(TE12L,F): RF FET Transistor, 16 V, 2 A, 7 W, SMD
Toshiba RFM04U6P(TE12L,F)

RF FET Transistor, 16 V, 2 A, 7 W, SMD

2.13 EUR/unit
RN1102,LF(CT: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1102,LF(CT

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

0.013 EUR/unit
RN1301,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Toshiba RN1301,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

0.025 EUR/unit
RN1302,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1302,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

0.037 EUR/unit
RN1401,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Toshiba RN1401,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

0.023 EUR/unit
RN1402,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1402,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

0.031 EUR/unit
RN1405,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
Toshiba RN1405,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

0.025 EUR/unit
SSM14N956L,EFF(S: Dual MOSFET, N Channel, 1000 µohm
Toshiba SSM14N956L,EFF(S

Dual MOSFET, N Channel, 1000 µohm

0.402 EUR/unit
SSM14N956L,EFF(S: Dual MOSFET, N Channel, 1000 µohm
Toshiba SSM14N956L,EFF(S

Dual MOSFET, N Channel, 1000 µohm

0.402 EUR/unit
SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

0.052 EUR/unit
SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

0.052 EUR/unit
SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

0.1 EUR/unit
SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

0.095 EUR/unit