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Semiconductors - Discretes Toshiba

Found 191 products. Showing up to 30 products per page.

Subcategories

Diodes & Rectifiers

Transistors

FETs

IGBTs

Manufacturer

1SS181,LF(T: Small Signal Diode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 4 ns, 2 A
Toshiba 1SS181,LF(T

Small Signal Diode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 4 ns, 2 A

0.023 EUR/unit
1SS272(TE85L,F): Small Signal Schottky Diode, Dual Isolated, 85 V, 100 mA, 1.2 V, 2 A, 125 °C
Toshiba 1SS272(TE85L,F)

Small Signal Schottky Diode, Dual Isolated, 85 V, 100 mA, 1.2 V, 2 A, 125 °C

0.156 EUR/unit
1SS306(TE85L,F): Small Signal Schottky Diode, Dual Isolated, 250 V, 100 mA, 1.2 V, 2 A, 125 °C
Toshiba 1SS306(TE85L,F)

Small Signal Schottky Diode, Dual Isolated, 250 V, 100 mA, 1.2 V, 2 A, 125 °C

1.23 EUR/unit
1SS352,H3F(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS352,H3F(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.206 EUR/unit
1SS362(TE85L,F): Small Signal Schottky Diode, Dual Series, 85 V, 80 mA, 1.2 V, 1 A, 125 °C
Toshiba 1SS362(TE85L,F)

Small Signal Schottky Diode, Dual Series, 85 V, 80 mA, 1.2 V, 1 A, 125 °C

0.101 EUR/unit
1SS367,H3F(T: Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS367,H3F(T

Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.023 EUR/unit
1SS384(TE85L,F): Small Signal Schottky Diode, Dual Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS384(TE85L,F)

Small Signal Schottky Diode, Dual Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.145 EUR/unit
1SS387,L3F(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS387,L3F(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.019 EUR/unit
1SS387CT,L3F(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS387CT,L3F(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.034 EUR/unit
1SS389,L3F(T: Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS389,L3F(T

Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.024 EUR/unit
1SS398(TE85L,F): Small Signal Schottky Diode, Dual Series, 420 V, 100 mA, 1.3 V, 2 A, 125 °C
Toshiba 1SS398(TE85L,F)

Small Signal Schottky Diode, Dual Series, 420 V, 100 mA, 1.3 V, 2 A, 125 °C

0.215 EUR/unit
1SS402(TE85L,F): Small Signal Schottky Diode, Dual Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba 1SS402(TE85L,F)

Small Signal Schottky Diode, Dual Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.125 EUR/unit
1SS405,H3F(T: Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba 1SS405,H3F(T

Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.053 EUR/unit
1SS413,L3M(T: Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba 1SS413,L3M(T

Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.031 EUR/unit
1SS424(TPL3,F): Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS424(TPL3,F)

Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C

0.084 EUR/unit
1SS427,L3M(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS427,L3M(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.032 EUR/unit
2SA1587-GR,LF(T: Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, Surface Mount
Toshiba 2SA1587-GR,LF(T

Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, Surface Mount

0.04 EUR/unit
2SA1943-O(Q): Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Toshiba 2SA1943-O(Q)

Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole

2.05 EUR/unit
2SA1943N(S1,E,S): Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba 2SA1943N(S1,E,S)

Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole

2.17 EUR/unit
2SC2712-O(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, Surface Mount
Toshiba 2SC2712-O(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, Surface Mount

0.085 EUR/unit
2SC2713-GR,LF(T: Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, TO-236MOD, Surface Mount
Toshiba 2SC2713-GR,LF(T

Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, TO-236MOD, Surface Mount

0.091 EUR/unit
2SC3325-Y,LF(T: Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, TO-236MOD, Surface Mount
Toshiba 2SC3325-Y,LF(T

Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, TO-236MOD, Surface Mount

0.129 EUR/unit
2SC4116-GR,LF(T: Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount
Toshiba 2SC4116-GR,LF(T

Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount

0.046 EUR/unit
2SC4213-B(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 100 mW, SOT-323, Surface Mount
Toshiba 2SC4213-B(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 100 mW, SOT-323, Surface Mount

0.126 EUR/unit
2SC5200-O(Q): Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba 2SC5200-O(Q)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole

1.81 EUR/unit
2SC5200N(S1,E,S): Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba 2SC5200N(S1,E,S)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole

2.26 EUR/unit
2SJ668(TE16L1,NQ): Power MOSFET, P Channel, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Surface Mount
Toshiba 2SJ668(TE16L1,NQ)

Power MOSFET, P Channel, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Surface Mount

0.378 EUR/unit
2SK2009(TE85L,F): Power MOSFET, N Channel, 30 V, 200 mA, 2 ohm, TO-236MOD, Surface Mount
Toshiba 2SK2009(TE85L,F)

Power MOSFET, N Channel, 30 V, 200 mA, 2 ohm, TO-236MOD, Surface Mount

0.259 EUR/unit
2SK208-GR(TE85L,F): JFET Transistor, 50 V, 6.5 mA, 5 V, TO-236MOD, 3 Pin, 125 °C
Toshiba 2SK208-GR(TE85L,F)

JFET Transistor, 50 V, 6.5 mA, 5 V, TO-236MOD, 3 Pin, 125 °C

0.125 EUR/unit
2SK3566(STA4,Q,M): Power MOSFET, N Channel, 900 V, 2.5 A, 6.4 ohm, TO-220SIS, Through Hole
Toshiba 2SK3566(STA4,Q,M)

Power MOSFET, N Channel, 900 V, 2.5 A, 6.4 ohm, TO-220SIS, Through Hole

0.603 EUR/unit