TOSHIBA
Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.
Found 197 products. Showing up to 30 products per page (7 pages).
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Small Signal Diode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 4 ns, 2 A
Small Signal Schottky Diode, Dual Isolated, 85 V, 100 mA, 1.2 V, 2 A, 125 °C
Small Signal Schottky Diode, Dual Isolated, 250 V, 100 mA, 1.2 V, 2 A, 125 °C
Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Small Signal Schottky Diode, Dual Series, 85 V, 80 mA, 1.2 V, 1 A, 125 °C
Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Small Signal Schottky Diode, Dual Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Small Signal Schottky Diode, Single, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Small Signal Schottky Diode, Dual Series, 420 V, 100 mA, 1.3 V, 2 A, 125 °C
Small Signal Schottky Diode, Dual Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, Surface Mount
Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, Surface Mount
Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, TO-236MOD, Surface Mount
Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, TO-236MOD, Surface Mount
Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount
Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 100 mW, SOT-323, Surface Mount
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Power MOSFET, P Channel, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 30 V, 200 mA, 2 ohm, TO-236MOD, Surface Mount
