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HN4B102J(TE85L,F)

Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W

  • Manufacturer: TOSHIBA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • SVHC: To Be Advised
  • No. of Pins: 5Pins
  • Product Range: -
  • Qualification: -
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: NPN, PNP
  • Power Dissipation NPN: 1.1W
  • Power Dissipation PNP: 1.1W
  • Transistor Case Style: SOT-25
  • Transition Frequency NPN: -
  • Transition Frequency PNP: -
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 40hFE
  • DC Current Gain hFE Min PNP: 40hFE
  • Continuous Collector Current NPN: 2A
  • Continuous Collector Current PNP: 2A
  • Collector Emitter Voltage Max NPN: 30V
  • Collector Emitter Voltage Max PNP: 30V
Delivery and price
Units per pack 1000
Price 0.193 €
Current stock 1000+
Lead time 7 days

Updated at March 15, 2026