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TOSHIBA

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Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.

Found 197 products. Showing up to 30 products per page (7 pages).

2SK3799: Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole
Toshiba 2SK3799

Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole

2SK3878(F): Power MOSFET, N Channel, 900 V, 9 A, 1.3 ohm, TO-3PN, Through Hole
Toshiba 2SK3878(F)

Power MOSFET, N Channel, 900 V, 9 A, 1.3 ohm, TO-3PN, Through Hole

2SK4017(Q): Power MOSFET, N Channel, 60 V, 5 A, 0.1 ohm, TO-251AA, Through Hole
Toshiba 2SK4017(Q)

Power MOSFET, N Channel, 60 V, 5 A, 0.1 ohm, TO-251AA, Through Hole

CCS15S30,L3F(T: Small Signal Diode, Single, 30 V, 1.5 A, 390 mV, 5 A
Toshiba CCS15S30,L3F(T

Small Signal Diode, Single, 30 V, 1.5 A, 390 mV, 5 A

CMS01(TE12L,Q,M): Schottky Rectifier, 30 V, 3 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS01(TE12L,Q,M)

Schottky Rectifier, 30 V, 3 A, Single, SMD, 2 Pins, 370 mV

CMS04(TE12L,Q,M): Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS04(TE12L,Q,M)

Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 370 mV

CMS05(TE12L,Q,M): Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 450 mV
Toshiba CMS05(TE12L,Q,M)

Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 450 mV

CMS06(TE12L,Q,M): Schottky Rectifier, 30 V, 2 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS06(TE12L,Q,M)

Schottky Rectifier, 30 V, 2 A, Single, SMD, 2 Pins, 370 mV

CMS11(TE12L,Q,M): Schottky Rectifier, 40 V, 2 A, Single, SMD, 2 Pins, 550 mV
Toshiba CMS11(TE12L,Q,M)

Schottky Rectifier, 40 V, 2 A, Single, SMD, 2 Pins, 550 mV

CRG07(TE85L,Q,M): Standard Recovery Diode, 100 V, 700 mA, Single, 1.1 V, 15 A
Toshiba CRG07(TE85L,Q,M)

Standard Recovery Diode, 100 V, 700 mA, Single, 1.1 V, 15 A

CRS01(TE85L,Q,M): Schottky Rectifier, 30 V, 1 A, Single, SMD, 2 Pins, 360 mV
Toshiba CRS01(TE85L,Q,M)

Schottky Rectifier, 30 V, 1 A, Single, SMD, 2 Pins, 360 mV

CRS04(TE85L,Q,M): Schottky Rectifier, Miniature, 40 V, 1 A, Single, 3-2A1A, 2 Pins, 490 mV
Toshiba CRS04(TE85L,Q,M)

Schottky Rectifier, Miniature, 40 V, 1 A, Single, 3-2A1A, 2 Pins, 490 mV

CRS05(TE85L,Q,M): Schottky Rectifier, 30 V, 1 A, Single, S-FLAT, 2 Pins, 450 mV
Toshiba CRS05(TE85L,Q,M)

Schottky Rectifier, 30 V, 1 A, Single, S-FLAT, 2 Pins, 450 mV

CRS05(TE85L,Q,M)        : Schottky Rectifier, Miniature, 30 V, 1 A, Single, 3-2A1A, 2 Pins, 450 mV
Toshiba CRS05(TE85L,Q,M)        

Schottky Rectifier, Miniature, 30 V, 1 A, Single, 3-2A1A, 2 Pins, 450 mV

CRS06(TE85L,Q,M): Schottky Rectifier, Miniature, 20 V, 1 A, Single, 3-2A1A, 2 Pins, 360 mV
Toshiba CRS06(TE85L,Q,M)

Schottky Rectifier, Miniature, 20 V, 1 A, Single, 3-2A1A, 2 Pins, 360 mV

CRS09(TE85L,Q,M): Schottky Rectifier, 30 V, 1.5 A, Single, 3-2A1A, 2 Pins, 460 mV
Toshiba CRS09(TE85L,Q,M)

Schottky Rectifier, 30 V, 1.5 A, Single, 3-2A1A, 2 Pins, 460 mV

CTS05S30,L3F(T: Small Signal Schottky Diode, Single, 30 V, 500 mA, 470 mV, 2 A, 125 °C
Toshiba CTS05S30,L3F(T

Small Signal Schottky Diode, Single, 30 V, 500 mA, 470 mV, 2 A, 125 °C

CTS05S40,L3F(T: Small Signal Schottky Diode, Single, 40 V, 500 mA, 600 mV, 2 A, 125 °C
Toshiba CTS05S40,L3F(T

Small Signal Schottky Diode, Single, 40 V, 500 mA, 600 mV, 2 A, 125 °C

CTS521,L3F(T: Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Toshiba CTS521,L3F(T

Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C

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Toshiba CUS08F30,H3F(T

SCHOTTKY DIODE, 30V, 0.8A, SOD-323

CUS10F30,H3F(T: Small Signal Schottky Diode, Single, 30 V, 1 A, 500 mV, 5 A, 125 °C
Toshiba CUS10F30,H3F(T

Small Signal Schottky Diode, Single, 30 V, 1 A, 500 mV, 5 A, 125 °C

CUS10S30,H3F(T: Small Signal Schottky Diode, Single, 30 V, 1 A, 450 mV, 5 A, 125 °C
Toshiba CUS10S30,H3F(T

Small Signal Schottky Diode, Single, 30 V, 1 A, 450 mV, 5 A, 125 °C

GT30N135SRA,S1E(S: IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
Toshiba GT30N135SRA,S1E(S

IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins

GT50J325: IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins
Toshiba GT50J325

IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins

HN4B102J(TE85L,F): Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W
Toshiba HN4B102J(TE85L,F)

Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W

MT3S111(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount
Toshiba MT3S111(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount

RFM04U6P(TE12L,F): RF FET Transistor, 16 V, 2 A, 7 W, SMD
Toshiba RFM04U6P(TE12L,F)

RF FET Transistor, 16 V, 2 A, 7 W, SMD

RN1102,LF(CT: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1102,LF(CT

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

RN1301,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Toshiba RN1301,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

RN1302,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1302,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm