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TOSHIBA

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Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.

Found 197 products. Showing up to 30 products per page (7 pages).

TPH9R00CQH,LQ(M1: Power MOSFET, N Channel, 150 V, 64 A, 9000 µohm, SOP, Surface Mount
Toshiba TPH9R00CQH,LQ(M1

Power MOSFET, N Channel, 150 V, 64 A, 9000 µohm, SOP, Surface Mount

TPHR6503PL1,LQ(M: Power MOSFET, N Channel, 30 V, 420 A, 410 µohm, SOP, Surface Mount
Toshiba TPHR6503PL1,LQ(M

Power MOSFET, N Channel, 30 V, 420 A, 410 µohm, SOP, Surface Mount

TPHR8504PL1,LQ(M: Power MOSFET, N Channel, 40 V, 150 A, 850 µohm, SOP, Surface Mount
Toshiba TPHR8504PL1,LQ(M

Power MOSFET, N Channel, 40 V, 150 A, 850 µohm, SOP, Surface Mount

TPHR9003NL1,LQ(M: Power MOSFET, N Channel, 30 V, 150 A, 770 µohm, SOP, Surface Mount
Toshiba TPHR9003NL1,LQ(M

Power MOSFET, N Channel, 30 V, 150 A, 770 µohm, SOP, Surface Mount

TPN2010FNH,L1Q(M: Power MOSFET, N Channel, 250 V, 9.9 A, 0.198 ohm, TSON, Surface Mount
Toshiba TPN2010FNH,L1Q(M

Power MOSFET, N Channel, 250 V, 9.9 A, 0.198 ohm, TSON, Surface Mount

TPN3300ANH,LQ(S: Power MOSFET, N Channel, 100 V, 9.4 A, 0.033 ohm, TSON, Surface Mount
Toshiba TPN3300ANH,LQ(S

Power MOSFET, N Channel, 100 V, 9.4 A, 0.033 ohm, TSON, Surface Mount

TPN4R712MD,L1Q(M: Power MOSFET, P Channel, 20 V, 36 A, 3800 µohm, TSON, Surface Mount
Toshiba TPN4R712MD,L1Q(M

Power MOSFET, P Channel, 20 V, 36 A, 3800 µohm, TSON, Surface Mount

TPWR8503NL,L1Q(M: Power MOSFET, N Channel, 30 V, 300 A, 720 µohm, DSOP, Surface Mount
Toshiba TPWR8503NL,L1Q(M

Power MOSFET, N Channel, 30 V, 300 A, 720 µohm, DSOP, Surface Mount

TTA004B,Q(S: Bipolar (BJT) Single Transistor, PNP, 160 V, 1.5 A, 10 W, TO-126N, Through Hole
Toshiba TTA004B,Q(S

Bipolar (BJT) Single Transistor, PNP, 160 V, 1.5 A, 10 W, TO-126N, Through Hole

TTA006B,Q(S: Bipolar Transistor Array, PNP, 230 V, 1 A
Toshiba TTA006B,Q(S

Bipolar Transistor Array, PNP, 230 V, 1 A

TTA1943(Q): Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba TTA1943(Q)

Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole

TTA1943(Q)      : Bipolar (BJT) Single Transistor, Audio, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Toshiba TTA1943(Q)      

Bipolar (BJT) Single Transistor, Audio, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole

TTC004B,Q(S: Bipolar (BJT) Single Transistor, NPN, 160 V, 1.5 A, 10 W, TO-126N, Through Hole
Toshiba TTC004B,Q(S

Bipolar (BJT) Single Transistor, NPN, 160 V, 1.5 A, 10 W, TO-126N, Through Hole

TTC011B,Q(S: Bipolar Transistor Array, NPN, 230 V, 1 A, 10 W
Toshiba TTC011B,Q(S

Bipolar Transistor Array, NPN, 230 V, 1 A, 10 W

TTC5200(Q): Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba TTC5200(Q)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole

TTC5200(Q)      : Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Toshiba TTC5200(Q)      

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole

XPQR3004PB,LXHQ(O: Power MOSFET, N Channel, 40 V, 400 A, 300 µohm, L-TOGL, Surface Mount
Toshiba XPQR3004PB,LXHQ(O

Power MOSFET, N Channel, 40 V, 400 A, 300 µohm, L-TOGL, Surface Mount