TOSHIBA
Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.
Found 1519 products. Showing up to 30 products per page (51 pages).
Subcategories
Semiconductors - Discretes
- ▶Diodes & Rectifiers
- ▷Small Signal Diodes
- ▷Schottky Diodes
- ▷Standard Recovery Rectifier Diodes
- ▷Fast & Ultrafast Recovery Rectifier Diodes
- ▶Transistors
- ▶FETs
- ▶IGBTs
Switches & Relays
Price range
Silicon Carbide Schottky Diode, Single Dual Anode, 650 V, 18 A, 17 nC, DFN
Silicon Carbide Schottky Diode, Single Dual Anode, 650 V, 18 A, 17 nC, DFN
Silicon Carbide Schottky Diode, Single, 650 V, 23 A, 22 nC, TO-220
Silicon Carbide Schottky Diode, Single Dual Anode, 650 V, 23 A, 22 nC, DFN
Silicon Carbide Schottky Diode, Single Dual Anode, 650 V, 23 A, 22 nC, DFN
Bipolar (BJT) Single Transistor, PNP, 160 V, 1.5 A, 10 W, TO-126N, Through Hole
Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
Bipolar (BJT) Single Transistor, Audio, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Bipolar (BJT) Single Transistor, NPN, 160 V, 1.5 A, 10 W, TO-126N, Through Hole
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Power MOSFET, P Channel, 60 V, 60 A, 0.0129 ohm, SOP Advance, Surface Mount
Power MOSFET, P Channel, 60 V, 60 A, 0.0129 ohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 120 A, 1140 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 120 A, 1140 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 60 V, 110 A, 1700 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 60 V, 110 A, 1700 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 90 A, 2400 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 90 A, 2400 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 80 V, 120 A, 0.00255 ohm, WFSOP Advance, Surface Mount
Power MOSFET, P Channel, 40 V, 100 A, 3100 µohm, WFSOP Advance, Surface Mount
Power MOSFET, P Channel, 40 V, 100 A, 3100 µohm, WFSOP Advance, Surface Mount
Power MOSFET, P Channel, 40 V, 100 A, 3100 µohm, SOP Advance, Surface Mount
Power MOSFET, P Channel, 40 V, 100 A, 3100 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 60 A, 3300 µohm, SOP Advance, Surface Mount
Power MOSFET, N Channel, 40 V, 60 A, 3300 µohm, SOP Advance, Surface Mount