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TOSHIBA

TOSHIBA logo

Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.

Found 1595 products. Showing up to 30 products per page (54 pages).

Subcategories

Semiconductors - Discretes

Switches & Relays

Price range

1SS413,L3M(T: Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba 1SS413,L3M(T

Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.032 EUR/unit
1SS413,L3M(T: Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba 1SS413,L3M(T

Small Signal Schottky Diode, Single, 25 V, 50 mA, 550 mV, 1 A, 125 °C

0.03 EUR/unit
1SS416,L3M(T: Small Signal Schottky Diode, Single, 35 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS416,L3M(T

Small Signal Schottky Diode, Single, 35 V, 100 mA, 500 mV, 1 A, 125 °C

0.036 EUR/unit
1SS416,L3M(T: Small Signal Schottky Diode, Single, 35 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS416,L3M(T

Small Signal Schottky Diode, Single, 35 V, 100 mA, 500 mV, 1 A, 125 °C

0.036 EUR/unit
1SS417,L3M(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417,L3M(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.035 EUR/unit
1SS417,L3M(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417,L3M(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.035 EUR/unit
1SS417CT,L3F(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417CT,L3F(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.022 EUR/unit
1SS417CT,L3F(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417CT,L3F(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.038 EUR/unit
1SS417CT,L3F(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417CT,L3F(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.022 EUR/unit
1SS417CT,L3F(T: Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C
Toshiba 1SS417CT,L3F(T

Small Signal Schottky Diode, Single, 45 V, 100 mA, 620 mV, 1 A, 125 °C

0.038 EUR/unit
1SS422(TE85L,F): Small Signal Schottky Diode, Dual Series, 35 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS422(TE85L,F)

Small Signal Schottky Diode, Dual Series, 35 V, 100 mA, 500 mV, 1 A, 125 °C

0.049 EUR/unit
1SS422(TE85L,F): Small Signal Schottky Diode, Dual Series, 35 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS422(TE85L,F)

Small Signal Schottky Diode, Dual Series, 35 V, 100 mA, 500 mV, 1 A, 125 °C

0.049 EUR/unit
1SS424(TPL3,F): Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS424(TPL3,F)

Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C

0.025 EUR/unit
1SS424(TPL3,F): Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Toshiba 1SS424(TPL3,F)

Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C

0.025 EUR/unit
1SS427,L3M(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS427,L3M(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.032 EUR/unit
1SS427,L3M(T: Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C
Toshiba 1SS427,L3M(T

Small Signal Schottky Diode, Single, 85 V, 100 mA, 1.2 V, 1 A, 150 °C

0.031 EUR/unit
2SA1587-GR,LF(T: Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, Surface Mount
Toshiba 2SA1587-GR,LF(T

Bipolar (BJT) Single Transistor, PNP, 120 V, 100 mA, 200 mW, SOT-323, Surface Mount

0.038 EUR/unit
2SA1943-O(Q): Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Toshiba 2SA1943-O(Q)

Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole

1.22 EUR/unit
2SA1943N(S1,E,S): Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba 2SA1943N(S1,E,S)

Bipolar (BJT) Single Transistor, PNP, 230 V, 15 A, 150 W, TO-3P, Through Hole

1.11 EUR/unit
2SC2712-O(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, Surface Mount
Toshiba 2SC2712-O(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-346, Surface Mount

0.029 EUR/unit
2SC2713-GR,LF(T: Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, TO-236MOD, Surface Mount
Toshiba 2SC2713-GR,LF(T

Bipolar (BJT) Single Transistor, NPN, 120 V, 100 mA, 200 mW, TO-236MOD, Surface Mount

0.325 EUR/unit
2SC3325-Y,LF(T: Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, TO-236MOD, Surface Mount
Toshiba 2SC3325-Y,LF(T

Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 200 mW, TO-236MOD, Surface Mount

0.067 EUR/unit
2SC4116-GR,LF(T: Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount
Toshiba 2SC4116-GR,LF(T

Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount

0.023 EUR/unit
2SC4213-B(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 100 mW, SOT-323, Surface Mount
Toshiba 2SC4213-B(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 20 V, 300 mA, 100 mW, SOT-323, Surface Mount

0.077 EUR/unit
2SC5200-O(Q): Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole
Toshiba 2SC5200-O(Q)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole

1.26 EUR/unit
2SC5200N(S1,E,S): Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole
Toshiba 2SC5200N(S1,E,S)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3P, Through Hole

1.04 EUR/unit
2SJ305(TE85L,F): Power MOSFET, P Channel, 30 V, 200 mA, 4 ohm, TO-236MOD, Surface Mount
Toshiba 2SJ305(TE85L,F)

Power MOSFET, P Channel, 30 V, 200 mA, 4 ohm, TO-236MOD, Surface Mount

0.169 EUR/unit
2SJ305(TE85L,F): Power MOSFET, P Channel, 30 V, 200 mA, 4 ohm, TO-236MOD, Surface Mount
Toshiba 2SJ305(TE85L,F)

Power MOSFET, P Channel, 30 V, 200 mA, 4 ohm, TO-236MOD, Surface Mount

0.169 EUR/unit
2SJ668(TE16L1,NQ): Power MOSFET, P Channel, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Surface Mount
Toshiba 2SJ668(TE16L1,NQ)

Power MOSFET, P Channel, 60 V, 5 A, 0.17 ohm, TO-252 (DPAK), Surface Mount

0.339 EUR/unit
2SK2009(TE85L,F): Power MOSFET, N Channel, 30 V, 200 mA, 2 ohm, TO-236MOD, Surface Mount
Toshiba 2SK2009(TE85L,F)

Power MOSFET, N Channel, 30 V, 200 mA, 2 ohm, TO-236MOD, Surface Mount

0.172 EUR/unit