TOSHIBA
Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.
Found 1519 products. Showing up to 30 products per page (51 pages).
Subcategories
Semiconductors - Discretes
- ▶Diodes & Rectifiers
- ▷Small Signal Diodes
- ▷Schottky Diodes
- ▷Standard Recovery Rectifier Diodes
- ▷Fast & Ultrafast Recovery Rectifier Diodes
- ▶Transistors
- ▶FETs
- ▶IGBTs
Switches & Relays
Price range
Power MOSFET, N Channel, 800 V, 5 A, 1.9 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 900 V, 4.5 A, 2.5 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 500 V, 5 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 500 V, 5 A, 1.3 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 80 V, 71 A, 4100 µohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 60 V, 98 A, 3900 µohm, TO-220, Through Hole
Power MOSFET, N Channel, 80 V, 105 A, 4200 µohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 80 V, 105 A, 4200 µohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 60 V, 62 A, 4100 µohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 80 V, 126 A, 4200 µohm, TO-220, Through Hole
Power MOSFET, N Channel, 75 V, 60 A, 0.0062 ohm, SC-67, Through Hole
Power MOSFET, N Channel, 250 V, 60 A, 0.0285 ohm, TO-3PN, Through Hole
Power MOSFET, N Channel, 600 V, 61.8 A, 0.033 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 600 V, 61.8 A, 0.036 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 600 V, 61.8 A, 0.033 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 600 V, 61.8 A, 0.033 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 600 V, 11 A, 0.54 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 100 V, 148 A, 4000 µohm, TO-220, Through Hole
Power MOSFET, N Channel, 600 V, 6.2 A, 0.68 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 650 V, 6 A, 0.95 ohm, SC-67, Through Hole
Power MOSFET, N Channel, 650 V, 5.8 A, 0.85 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 800 V, 6 A, 1.35 ohm, TO-220SIS, Through Hole
Power MOSFET, N Channel, 600 V, 6.2 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 600 V, 6.2 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 650 V, 5.8 A, 0.89 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 650 V, 5.8 A, 0.89 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 100 V, 112 A, 5500 µohm, TO-220, Through Hole
Power MOSFET, N Channel, 60 V, 46 A, 6700 µohm, TO-252 (DPAK), Surface Mount