TOSHIBA
Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.
Found 1524 products. Showing up to 30 products per page (51 pages).
Subcategories
Semiconductors - Discretes
- ▶Diodes & Rectifiers
- ▷Small Signal Diodes
- ▷Schottky Diodes
- ▷Standard Recovery Rectifier Diodes
- ▷Fast & Ultrafast Recovery Rectifier Diodes
- ▶Transistors
- ▶FETs
- ▶IGBTs
Switches & Relays
Price range
Power MOSFET, N Channel, 60 V, 200 mA, 3.9 ohm, SOT-23, Surface Mount
Power MOSFET, N Channel, 60 V, 400 mA, 1.5 ohm, SOT-23, Surface Mount
Power MOSFET, N Channel, 60 V, 400 mA, 1.5 ohm, SOT-23, Surface Mount
Power MOSFET, N Channel, 60 V, 400 mA, 1.5 ohm, SOT-23, Surface Mount
Small Signal Diode, Single, 85 V, 215 mA, 1.25 V, 1.6 ns, 2 A
Small Signal Diode, Single, 85 V, 215 mA, 1.25 V, 1.6 ns, 2 A
Small Signal Schottky Diode, Single, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Schottky Diode, Single, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Schottky Diode, Dual Common Cathode, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Schottky Diode, Dual Common Cathode, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Schottky Diode, Dual Series, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Schottky Diode, Dual Series, 35 V, 200 mA, 580 mV, 1 A, 150 °C
Small Signal Diode, Dual Common Cathode, 85 V, 215 mA, 1.25 V, 1.6 ns, 2 A
Small Signal Diode, Dual Common Cathode, 85 V, 215 mA, 1.25 V, 1.6 ns, 2 A
Small Signal Diode, Dual Common Anode, 85 V, 215 mA, 1.25 V, 1.6 ns, 2 A
Power MOSFET, P Channel, 60 V, 15 A, 0.05 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 15 A, 0.05 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 100 V, 15 A, 0.13 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 100 V, 15 A, 0.13 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 50 A, 0.0138 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 50 A, 0.0138 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 60 A, 1120 µohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 60 A, 1120 µohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 8 A, 0.104 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 8 A, 0.104 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, P Channel, 60 V, 8 A, 0.104 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET, N Channel, 600 V, 80 A, 0.024 ohm, TO-247, Through Hole
Power MOSFET, N Channel, 600 V, 80 A, 0.024 ohm, TO-247, Through Hole
