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Semiconductors - Discretes

Found 58647 products. Showing up to 30 products per page (1955 pages).

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ME01EA03-TE12L: Schottky Rectifier, 30 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV
Kyocera ME01EA03-TE12L

Schottky Rectifier, 30 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV

ME01EA03-TE12L: Schottky Rectifier, 30 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV
Kyocera ME01EA03-TE12L

Schottky Rectifier, 30 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV

ME01EA045-TE12L: Schottky Rectifier, 45 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV
Kyocera ME01EA045-TE12L

Schottky Rectifier, 45 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV

ME01EA045-TE12L: Schottky Rectifier, 45 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV
Kyocera ME01EA045-TE12L

Schottky Rectifier, 45 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV

ME01EA06-TE12L: Schottky Rectifier, 60 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 580 mV
Kyocera ME01EA06-TE12L

Schottky Rectifier, 60 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 580 mV

ME01EA06-TE12L: Schottky Rectifier, 60 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 580 mV
Kyocera ME01EA06-TE12L

Schottky Rectifier, 60 V, 1.57 A, Single, DO-221AC (SMAF), 2 Pins, 580 mV

ME01FA20-TE12L: Fast / Ultrafast Diode, 200 V, 1 A, Single, 980 mV, 30 ns, 20 A
Kyocera ME01FA20-TE12L

Fast / Ultrafast Diode, 200 V, 1 A, Single, 980 mV, 30 ns, 20 A

ME01FA20-TE12L: Fast / Ultrafast Diode, 200 V, 1 A, Single, 980 mV, 30 ns, 20 A
Kyocera ME01FA20-TE12L

Fast / Ultrafast Diode, 200 V, 1 A, Single, 980 mV, 30 ns, 20 A

ME01FA40-TE12L: Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.25 V, 30 ns, 20 A
Kyocera ME01FA40-TE12L

Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.25 V, 30 ns, 20 A

ME01FA40-TE12L: Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.25 V, 30 ns, 20 A
Kyocera ME01FA40-TE12L

Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.25 V, 30 ns, 20 A

ME03EA03-TE12L: Schottky Rectifier, 30 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV
Kyocera ME03EA03-TE12L

Schottky Rectifier, 30 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV

ME03EA03-TE12L: Schottky Rectifier, 30 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV
Kyocera ME03EA03-TE12L

Schottky Rectifier, 30 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 450 mV

ME03EA045-TE12L: Schottky Rectifier, 45 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV
Kyocera ME03EA045-TE12L

Schottky Rectifier, 45 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV

ME03EA045-TE12L: Schottky Rectifier, 45 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV
Kyocera ME03EA045-TE12L

Schottky Rectifier, 45 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 550 mV

ME03EA06-TE12L: Schottky Rectifier, 60 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 570 mV
Kyocera ME03EA06-TE12L

Schottky Rectifier, 60 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 570 mV

ME03EA06-TE12L: Schottky Rectifier, 60 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 570 mV
Kyocera ME03EA06-TE12L

Schottky Rectifier, 60 V, 3 A, Single, DO-221AC (SMAF), 2 Pins, 570 mV

MG9410-R: Bipolar (BJT) Single Transistor, Audio, PNP, 260 V, 15 A, 200 W, TO-3P, Through Hole

Bipolar (BJT) Single Transistor, Audio, PNP, 260 V, 15 A, 200 W, TO-3P, Through Hole

MGSF1N02LT1G: Power MOSFET, N Channel, 20 V, 750 mA, 0.09 ohm, SOT-23, Surface Mount
Onsemi MGSF1N02LT1G

Power MOSFET, N Channel, 20 V, 750 mA, 0.09 ohm, SOT-23, Surface Mount

MGSF1N02LT1G: Power MOSFET, N Channel, 20 V, 750 mA, 0.09 ohm, SOT-23, Surface Mount
Onsemi MGSF1N02LT1G

Power MOSFET, N Channel, 20 V, 750 mA, 0.09 ohm, SOT-23, Surface Mount

MGSF1N03LT1G: Power MOSFET, N Channel, 30 V, 1.6 A, 0.1 ohm, SOT-23, Surface Mount
Onsemi MGSF1N03LT1G

Power MOSFET, N Channel, 30 V, 1.6 A, 0.1 ohm, SOT-23, Surface Mount

MGSF2N02ELT1G: Power MOSFET, N Channel, 20 V, 2.8 A, 0.085 ohm, SOT-23, Surface Mount
Onsemi MGSF2N02ELT1G

Power MOSFET, N Channel, 20 V, 2.8 A, 0.085 ohm, SOT-23, Surface Mount

MGSF2N02ELT1G: Power MOSFET, N Channel, 20 V, 2.8 A, 0.085 ohm, SOT-23, Surface Mount
Onsemi MGSF2N02ELT1G

Power MOSFET, N Channel, 20 V, 2.8 A, 0.085 ohm, SOT-23, Surface Mount

MIC94050YM4-TR: Power MOSFET, P Channel, 6 V, 1.8 A, 0.125 ohm, SOT-143, Surface Mount
Microchip MIC94050YM4-TR

Power MOSFET, P Channel, 6 V, 1.8 A, 0.125 ohm, SOT-143, Surface Mount

MIC94052YC6-TR: Power MOSFET, P Channel, 6 V, 2 A, 0.084 ohm, SC-70, Surface Mount
Microchip MIC94052YC6-TR

Power MOSFET, P Channel, 6 V, 2 A, 0.084 ohm, SC-70, Surface Mount

MIC94053YC6 TR: Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount
Micrel MIC94053YC6 TR

Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount

MIC94053YC6 TR: Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount
Micrel MIC94053YC6 TR

Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount

MIC94053YC6-TR: Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount
Microchip MIC94053YC6-TR

Power MOSFET, P Channel, 6 V, 2 A, 0.07 ohm, SC-70, Surface Mount

MII75-12A3: IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module
Ixys MII75-12A3

IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module

MJ10000: DARLINGTON TRANSISTOR, NPN, 450V, 20A, T
Solid MJ10000

DARLINGTON TRANSISTOR, NPN, 450V, 20A, T

MJ10005: Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 20 A, 175 W, TO-3, Through Hole
Multicomp MJ10005

Bipolar (BJT) Single Transistor, Darlington, NPN, 400 V, 20 A, 175 W, TO-3, Through Hole