Illustrative purposes only
MII75-12A3
IGBT Module, Dual [Half Bridge], 90 A, 2.2 V, 370 W, 125 °C, Module
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: IGBT Modules
- Product variants: No other variants available. No other names.
- No. of Pins: 11Pins
- IGBT Technology: NPT IGBT [Standard]
- IGBT Termination: Stud
- Power Dissipation: 370W
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 90A
- Power Dissipation Pd: 370W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 90A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 2.2V
- Collector Emitter Saturation Voltage Vce(on): 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 48.41 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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