MII75-12A3

**MII75-12A3** 

## **IGBT (NPT) Module** 

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VCES = 2x 1200 V<br>I C25 = 90 A<br>V = 2.2 V<br>CE(sat)<br>**----- End of picture text -----**<br>


## Phase leg 

## **Part number** 

MII75-12A3 

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Backside: isolated<br>**----- End of picture text -----**<br>


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1<br>7 o<br>6<br>3<br>4 o<br>5<br>2<br>**----- End of picture text -----**<br>


## **Features / Advantages:** 

- NPT IGBT technology 

- low saturation voltage 

- low switching losses 

- switching frequency up to 30 kHz 

- square RBSOA, no latch up 

- high short circuit capability 

- positive temperature coefficient for easy parallelling 

- MOS input, voltage controlled 

- ultra fast free wheeling diodes 

## **Applications:** 

- AC motor drives 

- Solar inverter 

- Medical equipment 

- Uninterruptible power supply 

- Air-conditioning systems 

- Welding equipment 

- Switched-mode and resonant-mode power supplies 

- Inductive heating, cookers 

- Pumps, Fans 

## **Package:** Y4 

- Isolation Voltage:          V~3600 

- Industry standard outline 

- RoHS compliant 

- Soldering pins for PCB mounting 

- Base plate: DCB ceramic 

- Reduced weight 

- Advanced power cycling 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved 

**MII75-12A3** 

|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|Ratings<br>**IGBT**|
|---|---|---|---|---|
|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|VCES<br>_collector emitter voltage_<br>T    =    25°C<br>VJ|||1200|V|
|VGES<br>VGEM<br>_max. transient gate emitter voltage_<br>_max. DC gate voltage_|||±20<br>±30|V<br>V|
|T    =   25°C<br>_collector current_<br>C<br>T    =       °C<br>C<br>IC25<br>IC<br>80<br>80|||90<br>60|A<br>A|
|_total power dissipation_<br>Ptot<br>T    =   25°C<br>C|||370|W|
|T    =       °C<br>_collector emitter saturation voltage_<br>VJ<br>VCE(sat)<br>I  =         A; V   = 15 V<br>C<br>GE<br>T    =   25°C<br>VJ<br>50<br>125||2.7<br>2.2|2.7|V<br>V|
|_gate emitter threshold voltage_<br>VGE(th)<br>I  =       mA; V   = V<br>C<br>GE<br>CE<br>T    =   25°C<br>VJ<br>2|4.5|5.5|6.5|V|
|_collector emitter leakage current_<br>ICES<br>V   = V    ; V   = 0 V<br>CE<br>CES<br>GE<br>T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125||6|4|mA<br>mA|
|IGES<br>_gate emitter leakage current_<br>V    = ±20 V<br>GE|||200|nA|
|G(on)<br>_total gate charge_<br>V   =          V; V    = 15 V; I  =         A<br>CE<br>Q<br>GE<br>C<br>50<br>600||240||nC|
|_turn-on delay time_<br>t<br>T    =       °C<br>t<br>t<br>t<br>E<br>E<br>d(on)<br>r<br>d(off)<br>f<br>on<br>off<br>_current rise time_<br>_turn-off delay time_<br>_current fall time_<br>_turn-on energy per pulse_<br>_turn-off energy per pulse_<br>inductive load<br>V    =          V; I  =         A<br>V    = ±15 V; R  =       Ω<br>CE<br>C<br>GE<br>G<br>VJ<br>50<br>22<br>600<br>125||100<br>70<br>500<br>70<br>7.6<br>5.6||ns<br>ns<br>ns<br>ns<br>mJ<br>mJ|
|_reverse bias safe operating area_<br>RBSOA<br>T    =       °C<br>VJ<br>V    = ±15 V; R  =       Ω<br>GE<br>G<br>V       =         V<br>CEmax<br>1200<br>22<br>I CM<br>125|||100|A|
|_short circuit safe operating area_<br>SCSOA<br>T    =       °C<br>VJ<br>V    =         V; V   = ±15 V<br>CE<br>GE<br>_short circuit duration_<br>t<br>_short circuit current_<br>I<br>SC<br>SC<br>R  =       Ω; non-repetitive<br>G<br>22<br>1200<br>V       =         V<br>CEmax<br>1200<br>125||180|10|µs<br>A|
|R thJC<br>_thermal resistance junction to case_|||0.33|K/W|
|RthCH<br>_thermal resistance case to heatsink_||0.33||K/W|
||||1200|V|
|**Diode**|||||
|VRRM<br>_max. repetitive reverse voltage_<br>T    =   25°C<br>VJ|||||
|T    =   25°C<br>_forward current_<br>C<br>T    =       °C<br>C<br>IF25<br>IF<br>80<br>80|||100<br>60|A<br>A|
|T    =   25°C<br>_forward voltage_<br>VJ<br>T    = 125°C<br>VJ<br>VF<br>I  =         A<br>F<br>50||1.80|2.50|V<br>V|
|T    =   25°C<br>_reverse current_<br>VJ<br>T    = 125°C<br>VJ<br>IR<br>R<br>RRM<br>V  = V||1|0.65|mA<br>mA|
|-di  /dt =          A/µs<br>T    = 125°C<br>VJ<br>Q<br>I<br>t<br>rr<br>RM<br>rr<br>_reverse recovery charge_<br>_max. reverse recovery current_<br>_reverse recovery time_<br>V  =<br>I  =         A; V   = 0 V<br>F<br>F<br>GE<br>E rec<br>_reverse recovery energy_<br>R<br>50<br>400<br>600 V||3.5<br>40<br>200<br>1||µC<br>A<br>ns<br>mJ|
|R thJC<br>_thermal resistance junction to case_|||0.66|K/W|
|R thCH<br>_thermal resistance case to heatsink_||0.66||K/W|
||||||



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved 

**MII75-12A3** 

|Symbol<br>Definition<br>Conditions|Symbol<br>Definition<br>Conditions|min.|typ.|max.|Unit|
|---|---|---|---|---|---|
|I RMS<br>_RMS current_<br>per terminal||||300|A|
|TVJ<br>_virtual junction temperature_||-40<br>~~SE~~|~~SE~~|150|°C|
|Top<br>_operation temperature_||-40<br>~~SE~~|~~SE~~|125|°C|
|Tstg<br>_storage temperature_||-40||125|°C|
|Weight|||110||g|
|M D<br>_mounting torque_<br>M T<br>_terminal torque_||2.25<br>4.5||2.75<br>5.5|Nm<br>Nm|
|d Spp/App<br>_creepage distance on surface | striking distance through air_<br>d Spb/Apb<br>_terminal to backside_<br>_terminal to terminal_|14.0<br>16.0|10.0<br>16.0|||mm<br>mm|
|V<br>t = 1 second<br>t = 1 minute<br>_isolation voltage_<br>50/60 Hz, RMS; I      ≤ 1 mA<br>ISOL<br>ISOL||3600<br>3000|||V<br>V|



accompy. _Line_ Circuit Diagram _Date Code_ yywwA _Part No._ YYYYYYYYYYY _2D Matrix_ ~~ci~~ 

|Ordering|Part Number|Markingon Product|DeliveryMode|Quantity|Code No.|
|---|---|---|---|---|---|
|Standard|MII75-12A3|MII75-12A3|Box|6|466735|



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_<br>~~ae~~|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_<br>~~ae~~|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_<br>~~ae~~|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>150 °C<br>_* on die level_<br>~~ae~~|
|---|---|---|---|
|I<br>V0<br>~~R~~0||IGBT|Diode|
|||||
|_threshold voltage_<br>V 0 max||1.5|V<br>1.3|
|R0 max<br>_slope resistance *_||20.1|mΩ<br>10.8|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved 

**MII75-12A3** 

## **Outlines Y4** 

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67 ±0.2<br>2.8 x0.5<br>M5<br>Ø 6.5<br>94 ±0.3<br>80 ±0.2<br>M5 x10<br>1 2 3<br>17 ±0.2<br>40 ±0.2<br>General tolerances:<br>DIN ISO 2768-T1-m 63 ±0.2<br>1<br>7<br>6<br>3<br>4<br>5<br>2<br>7.5<br>30 ±0.3 +0.5 - 0.2<br>29.5 +0.3 - 0.1<br>0.25<br>5 7.7<br>7 11<br>6 10<br>Ø 12<br>34 ±0.2 15 ±0.2<br>28 ±0.15<br>18.5 ±0.15<br>5 9<br>4 8<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved 

**MII75-12A3** 

## **IGBT** 

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120 120 100<br>TVJ = 25°C VGE =17 V TVJ = 125°C VGE =17 V VCE = 20 V<br>100 100 15 V TVJ = 25°C<br>15 V 80<br>13 V<br>13 V<br>80 80<br>IC 11 V IC 11 V IC 60<br>60 60<br>[A] [A] [A] 40<br>40 40<br>9 V<br>9 V<br>20<br>20 20<br>0 0 0<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 6 7 8 9 10 11<br>VCE  [V] VCE [V] VGE [V]<br>Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics<br>20 24 120 12 600<br>VCE = 600 V<br>IC = 50 A 10 500<br>t<br>d(off)<br>15 18 90<br>t d(on) t 8 400<br>VGE Eon Eoff t<br>10 12 60 6 300<br>[V] [mJ] [mJ] V CE = 600 V<br>t r [ns] 4 VGE = ±15 V 200[ns]<br>VCE = 600 V RG =   22<br>5 6 VGE = ±15 V 30 Eoff TVJ = 125°C<br>Eon TRVJG == 125°C22 2 t f 100<br>0 0 0 0 0<br>0 50 100 150 200 250 300 0 20 40 60 80 100 0 20 40 60 80 100<br>QG [nC] IC [A] IC [A]<br>Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. turn on energy & switching Fig.6 Typ. turn off energy & switching<br>times versus collector current times versus collector current<br>**----- End of picture text -----**<br>


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0.4 20 240 10 1500<br>VCE = 600 V t VCE = 600 V t<br>d(on) d(off)<br>V GE = ±15 V V GE = ±15 V<br>0.3 15 TIC VJ == 12550 °AC Eon 180 8 ITCVJ = 125°C= 50 A 1200<br>Eoff t<br>ZthJC single pulse Eon t r t 6 Eoff 900<br>0.2 10 120 [mJ] [ns]<br>[K/W] [mJ] [ns] 4 600<br>0.1 5 60<br>2 300<br>0 0 0 0<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 0 20 40 60 80 100 0 20 40 60 80 100<br>t [s] RG [ ] RG [ ]<br>Fig. 12 Typical transient Fig. 9 Typ. turn on energy & switching Fig. 9 Typ. turn off energy & switching<br>thermal impedance times versus gate resistor times versus gate resistor<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved 

**MII75-12A3** 

## **Diode** 

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180 0.8<br>150<br>0.6<br>120<br>Z<br>thJC<br>IF single pulse<br>90 0.4<br>[A] [K/W]<br>60<br>TJ = 125°C<br>0.2<br>30<br>TJ = 25°C<br>0<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>VF [V] t [s]<br>**----- End of picture text -----**<br>


Fig. 1 Typ. Forward current vs. VF 

Fig. 2 Typ. transient thermal impedance junction to case 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20131206a 

© 2013 IXYS all rights reserved