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MJ10000
DARLINGTON TRANSISTOR, NPN, 450V, 20A, T
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SOLID STATE
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 2Pins
- Power Dissipation: 175W
- DC Current Gain hFE: 600hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-3
- DC Current Gain hFE Min: 600hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 450V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.39 € |
| Current stock | 10+ |
| Lead time | 30 days |
| — irene STATE INC. ; 46BLOOMFIEL FARRAN **D** , STREETNEW JERSEY 07003 www.solidstateinc.com
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## SWITCHMODE SERIES
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NPN SILICON POWER DARLINGTON TRANSISTORS<br>The MJ10000 and MJ10001 darlington transistors are designed<br>for high-voltage, high-speed, power switching in inductive circuits<br>where fall time is critical. They are particularly suited for line oper<br>-ated switch-mode applications such as:<br>FEATURES:<br>“Continuous*Switching RegulatorsCollector Current - I,= 20A<br>“Inverters<br>*Solenoid and Relay Drivers<br>*Motor Controls 100 15<br>MAXIMUM<br>RATINGS<br>Characteristic | Symbol | MJ10000 MJ10001 | unit |<br>Emitter-Base Voltage 8.0<br>Collector Current-Continuous 20 A<br>-Peak 30<br>Total Power Dissipation @T,=25°C 175 w<br>@T,= 100°C 100 Ww<br>Derate above 25°C 1.0 wc<br>Operating and Storage Junction T,.7vests °C<br>Temperature Range<br>- 65 to +200<br>THERMAL CHARACTERISTICS<br>Thermal Resistance Junction to Case | Rie [| 10 °CAV<br>200 FIGURE -1 POWER DERATING<br>ed<br>& 160 Ne ee ee<br>3 125 Pot Py tT tt<br>Kio t | ENE | ft ft<br>go,sept | | | Ti | ff<br>go, 1. | ||TS| | INI<br>et [ | | Tt | tT TNA<br>0 2 50 75 100 125 150 175 200<br>Te , TEMPERATURE(*C)<br>**----- End of picture text -----**<br>
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NPN<br>MJ10000<br>MJ10001<br>**----- End of picture text -----**<br>
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20 AMPERE<br>POWER DARLINGTON<br>TRANSISTORS<br>350-400 VOLTS<br>175 WATTS<br>**----- End of picture text -----**<br>
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| —<br>TO-3<br>= =<br>D F<br>{= .<br>J — |<br>© >) nf<br>**----- End of picture text -----**<br>
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COLLECTOR(CASE)<br>| MILLIMETERSMILLIMETERS |<br>cece<br>a | 3875 | 2996<br>B | 18.28 | 22.25<br>p | 1118 | 1219<br>EF | ‘oe. | 10067<br>e| | 35feea | te1730<br>J | 368 | 436<br>K | 10.67 | 11.18<br>**----- End of picture text -----**<br>
MJ10000, MJ10001, NPN
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## ene ELECTRICAL CHARACTERISTICS ( T, = 25°C unless otherwise noted )
|OFF CHARACTERISTICS||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Collector - Emitter Sustaining Voltage<br>( Ig =250MA,Ig=9,Vetamp=RateVego)|weloot|Veeoisus)|a0||||Vv|||<br>||
|Collector Cutoff Current<br>(Vog™RatedVogy,Ry_e=50ohm,T,=100°C)|||||5.0||mA||||
|Collector Cutoff Current<br>(Vegy= Rated Value, Vagiog<br>=1-5V)<br>(Vegy= Rated Value, Vagiopp)=1-5 V, T.=100°C)|||||||mA|||<br>||
|Ven<br>=8.0V,1,=0<br>(Veg<br>c=9)|||||150|i|__|||
|ON CHARACTERISTICS (1)|||||||||||
|DCCurrentGain<br>(lo=5.0A, Vog =5.0V)<br>(lg<br>=10A,Veg<br>=5.0V)||hFE|50<br>40||600<br>400|||7”<br>|||<br>|<br>,|
|Collector-EmitterSaturationVoltage<br>(le = 10A, t, = 400mA )<br>(Ig =20A, lp =1.0A)<br>(Ig= 10A, Ig =400MA,T,=100°C )||Veetaat|||1.9<br>3.0<br>2.0||V||:<br>|<br>||
|Base - Emitter SaturationVoltage<br>(Ig=10A, t,=400mA)<br>(ig= 10A, I,=400mA, T,.=100°C )||Vpe{sat)|||||Vv||,|
|Diode ForwardVoltage||Ve|||||Vv|||
|(tp = 10A)||||||||||
|DYNAMIC CHARACTERISTICS||||||||||
|Smail-Signal Current Gain(2)<br>(Ig = 1.0A,Vog = 10 V, f = 1.0 MHz)|||10||||||||
|Output Capacitance<br>(Veg=10V, 1,=0, f=100kHz)||Cob|100||||pF||||
|SWITCHINGCHARACTERISTICS|||||||||||
|StorageTime<br>twesouspuycyiesoe||| te |||||98|||ow||||
|(1)PulseTest: Pulse width =300us , DutyCycle <br>(2)f,=|h,,|<br>°Ftant|S 2.0%||||||||||
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DC CURRENT GAIN
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## COLLECTOR SATURATION REGION
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1)SEAa OO 0 a pG 3.0 | [ i j i |ose_<br>wfCE eeTI go stimis nati<br>ea eae ae gL |<br>grtee1 pt at are pS 8CUIot| Pest\ oa] peeNTeT<br>BSN Z oo Ti<br>° ee bee gS Fee<br>a eS . ett }-—_t-—4+ 1 +H<br>lon $40 Bisa = __<br>0.2 0.6 4 2 5 10 20 0.02 0.05 0.1 0.2 0.5 1 2<br>k , COLLECTOR CURRENT (AMP) ls, BASE CURRENT (AMP.)<br>COLLECTOR EMITTER SATURATION VOLTAGE BASE EMITTER VOLTAGE<br>“TT° TTTii TP T TT7Y al eeimeveesyae |||fen HZ<br>ey 4 - 4 — eA<br>Ss 0a w = pte | +Kea Lp<br>E< Ett HL LL aLa Sot weet<br>g | | E 16+-—4 4 =e Be<br>>> scottSeretoeerae ili gC7 ee——ELT 25°C LaLAT><br>ewe mee pe<br>os” cone0.5 of5 TTTT. FT TT<br>Kk , COLLECTOR CURRENT (AMP) Ic , COLLECTOR CURRENT (AMP)<br>COLLECTOR CUT-OFF REGION OUTPUT CAPACITANCES<br>= ee “ESOS<br>—— SET ae 1<br>oa ee 72 g attCEE<br>SS aes as! a<br>aie2 — ee eee HSE<br>ve = gE NeTT<br>(He=s=s=2==i a A A ?5 jie<br>eo LUN<br>= —- ——— ee ra)4 MEHee<br>SSS et oe eee et<br>a a a eo CCC i<br>02 0 +0.2 +0.4 +06 40.8 02 4.0 2.0 5.0 10 20 50 100 200 = 400<br>Vee,BASE EMITTER VOLTAGE (VOLTS) Va. REVERSE VOLTAGE(VOLTS)<br>**----- End of picture text -----**<br>
MJ10000 , MJ10001 NPN
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Ed :<br>TURN-ON TIME TURN-OFF TIME<br>. Pitt a<br>20 yac e iomeey 2.0 i= A<br>1.0 me LL eZ atlze<br>Tras" — 1.0——— a<br>wg NS a OO A $e ee<br>t OsPSS— SS; | | Th TT |W eeoseeeees Rae ——|<br>< PN Ne eee, . a 7 eee Veco SV -<br>PUA anee<br>TO]ot SRST)TAH of<br>1 2 5 7 10 20 1 2 § 7 10 20<br>ik , COLLECTOR CURRENT (AMP) is , COLLECTOR CURRENT (AMP)<br>ACTIVE REGION SAFE OPERATING AREA<br>50SS |<br>20SOS to<br>8 20oo mH |<br>Sou<br>N NS<br>gf) 0.1 == —- — BondingteascommnnyWire Limit | =TTS ST |<br>SO — Eeeeeae tenn Umbed eeSS |:<br>owl Curves App Boiow Rated Vero JP Ff<br>i rr a a nnie,”er” ne”)<br>Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>REVERSE BIAS SWITCHING SAFE OPERATING AREA |<br>° ‘\y ft |<br>5 1S SO VLESS 2\ ee<br>rot}: | | tT Witto<br>aee ee Veen |<br>Pm<br>> 4.0 ~~ |<br>Poet oS<br>5 100 200 300 400 500 ,<br>Vee, COLLECTOR-EMITTERVOLTAGE(VOLTS) .<br>**----- End of picture text -----**<br>
Updated at February 9, 2023
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