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Semiconductors - Discretes

Found 59617 products. Showing up to 30 products per page (1988 pages).

Subcategories

Diodes & Rectifiers

Transistors

FETs

Thyristors

IGBTs

Intelligent Power Modules

Manufacturer

Price range

HGTG20N60B3D: IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins
Onsemi HGTG20N60B3D

IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins

3.65 EUR/unit
HGTG30N60A4: IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins
Onsemi HGTG30N60A4

IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

1.84 EUR/unit
HGTG30N60A4D: IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins
Onsemi HGTG30N60A4D

IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

4.71 EUR/unit
HGTG30N60B3: IGBT, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins
Onsemi HGTG30N60B3

IGBT, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

1.62 EUR/unit
HGTG30N60B3D..: IGBT, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 Pins
Onsemi HGTG30N60B3D..

IGBT, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 Pins

7.08 EUR/unit
HGTG30N60C3D: IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 Pins
Onsemi HGTG30N60C3D

IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 Pins

4.17 EUR/unit
HGTG40N60B3...: IGBT, 70 A, 2 V, 290 W, 600 V, TO-247, 3 Pins
Onsemi HGTG40N60B3...

IGBT, 70 A, 2 V, 290 W, 600 V, TO-247, 3 Pins

4.52 EUR/unit
HGTG5N120BND: IGBT, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins
Onsemi HGTG5N120BND

IGBT, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins

1.47 EUR/unit
HGTP12N60A4D: IGBT, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 Pins
Onsemi HGTP12N60A4D

IGBT, 54 A, 2.7 V, 167 W, 600 V, TO-220AB, 3 Pins

3.07 EUR/unit
HGTP20N60A4: IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-220AB, 3 Pins
Onsemi HGTP20N60A4

IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-220AB, 3 Pins

2.01 EUR/unit
HGTP7N60A4: IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 Pins
Onsemi HGTP7N60A4

IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 Pins

1.53 EUR/unit
HGTP7N60A4-F102: IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220, 3 Pins
Onsemi HGTP7N60A4-F102

IGBT, 34 A, 2.7 V, 125 W, 600 V, TO-220, 3 Pins

1.02 EUR/unit
HMF04N65S: Power MOSFET, N Channel, 650 V, 4 A, 2.4 ohm, TO-220F, Through Hole
Multicomp HMF04N65S

Power MOSFET, N Channel, 650 V, 4 A, 2.4 ohm, TO-220F, Through Hole

0.311 EUR/unit
HMF07N65S: Power MOSFET, N Channel, 650 V, 7 A, 1.2 ohm, TO-220F, Through Hole
Multicomp HMF07N65S

Power MOSFET, N Channel, 650 V, 7 A, 1.2 ohm, TO-220F, Through Hole

0.508 EUR/unit
HMF12N65S: Power MOSFET, N Channel, 650 V, 12 A, 0.85 ohm, TO-220F, Through Hole
Multicomp HMF12N65S

Power MOSFET, N Channel, 650 V, 12 A, 0.85 ohm, TO-220F, Through Hole

3.62 EUR/unit
HMF20N65S: Power MOSFET, N Channel, 650 V, 20 A, 0.5 ohm, TO-220F, Through Hole
Multicomp HMF20N65S

Power MOSFET, N Channel, 650 V, 20 A, 0.5 ohm, TO-220F, Through Hole

0.974 EUR/unit
HMT02N02S: Power MOSFET, N Channel, 20 V, 2 A, 0.13 ohm, SOT-23, Surface Mount
Multicomp HMT02N02S

Power MOSFET, N Channel, 20 V, 2 A, 0.13 ohm, SOT-23, Surface Mount

0.048 EUR/unit
HMT03P02S: Power MOSFET, P Channel, 20 V, 3 A, 0.095 ohm, SOT-23, Surface Mount
Multicomp HMT03P02S

Power MOSFET, P Channel, 20 V, 3 A, 0.095 ohm, SOT-23, Surface Mount

0.122 EUR/unit
HMV4P1P02S: Power MOSFET, P Channel, 20 V, 4.1 A, 0.039 ohm, SOT-23, Surface Mount
Multicomp HMV4P1P02S

Power MOSFET, P Channel, 20 V, 4.1 A, 0.039 ohm, SOT-23, Surface Mount

0.166 EUR/unit
HN1B01FDW1T1G: Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 380 mW
Onsemi HN1B01FDW1T1G

Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 380 mW

0.041 EUR/unit
HN1B01FDW1T1G: Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 380 mW
Onsemi HN1B01FDW1T1G

Bipolar Transistor Array, Complementary NPN and PNP, 50 V, 50 V, 200 mA, 200 mA, 380 mW

0.041 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.029 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.071 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.071 EUR/unit
HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

0.029 EUR/unit
HN2D02FUTW1T1G: Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A
Onsemi HN2D02FUTW1T1G

Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A

0.06 EUR/unit
HN2D02FUTW1T1G: Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A
Onsemi HN2D02FUTW1T1G

Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A

0.052 EUR/unit
HN2D02FUTW1T1G: Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A
Onsemi HN2D02FUTW1T1G

Small Signal Diode, Triple Isolated, 85 V, 100 mA, 1.2 V, 3 ns, 1 A

0.06 EUR/unit
HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.104 EUR/unit
HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

0.104 EUR/unit