HN2D02FUTW1T1G

## HN2D02FUTW1T1G, SHN2D02FUTW1T1G 

## Ultra High Speed Switching Diodes 

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications. 

## **http://onsemi.com** 

## **Features** 

- Fast trr, < 3.0 ns 

- Low CD, < 2.0 pF 

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SC−88<br>CASE 419B<br>STYLE 1<br>**----- End of picture text -----**<br>


- AEC−Q101 Qualified and PPAP Capable 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

**MAXIMUM RATINGS** (TA = 25C) 

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6 5 4<br>1 2 3<br>**----- End of picture text -----**<br>


**Rating Symbol Value Unit MARKING DIAGRAM** Reverse Voltage VR 80 V Peak Reverse Voltage VRM 85 V 6 Forward Current (Note 1) IF 100 mAdc R7 M Peak Forward Current (Note 1) IFM 240 mAdc Peak Forward Surge Current (10 ms) IFSM 1.0 Adc (Note 1) 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended R7 = Specific Device Code Operating Conditions is not implied. Extended exposure to stresses above the M = Date Code ~~=~~ Recommended Operating Conditions may affect device reliability. = Pb−Free Package 1. This is maximum rating for a single diode. In the case of using 2 or 3 diodes, the maximum ratings per diodes is 75% of the single diode. (Note: Microdot may be in either location) **THERMAL CHARACTERISTICS ORDERING INFORMATION Rating Symbol Max Unit Device Package Shipping**[†] Power Dissipation PD 300 mW Junction Temperature TJ 150 C HN2D02FUTW1T1G (Pb−Free)SC−88 Tape & Reel3000 / ~~es~~ Storage Temperature Tstg −55 to +150 C SHN2D02FUTW1T1G SC−88 3000 / (Pb−Free) Tape & Reel 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **HN2D02FUTW1T1/D** 

**1** 

 Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 4** 

**HN2D02FUTW1T1G,  SHN2D02FUTW1T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25C)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Condition**|**Min**|**Max**|**Unit**|
|Reverse Voltage Leakage Current|IR|VR= 30 V|−|0.1|�Adc|
|||VR= 80 V|−|0.5||
|Forward Voltage|VF|IF= 100 mA|−|1.2|Vdc|
|Reverse Breakdown Voltage|VR|IR= 100�A|80|−|Vdc|
|Diode Capacitance|CD|VR= 0, f = 1.0 MHz|−|2.0|pF|
|Reverse Recovery Time (Figure 1)|trr(Note 2)|IF= 10 mA, VR= 6.0 V,<br>RL= 100�, Irr= 0.1 IR|−|3.0|ns|



2. trr Test Circuit 

## **RECOVERY TIME EQUIVALENT TEST CIRCUIT** 

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RL<br>A<br>**----- End of picture text -----**<br>


## **INPUT PULSE** 

## **OUTPUT PULSE** 

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tr tp trr<br>IF<br>t<br>10%<br>Irr = 0.1 IR<br>90% IF = 10 mA<br>VR tp = 2  � s VRRL = 100  = 6 V �<br>tr = 0.35 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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100 10 TA = 150  C<br>TA = 125  C<br>1.0<br>10<br>TA = 85  C TA = 85  C<br>0.1<br>1.0 TA = 25  C TA = 55  C<br>0.01<br>TA = -�40  C<br>TA = 25  C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 4. Capacitance<br><br>IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (��A)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

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1<br>SCALE 2:1 2X DATE 11 DEC 2012<br>aaa H D<br>- D H NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,<br>D GAGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-<br>PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.<br>4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF<br>6 5 4 THE PLASTIC BODY AND DATUM H.<br>L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H.<br>E E1 DETAIL A 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.<br>7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.<br>1 2 3<br>ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN<br>EXCESS OF DIMENSION b AT MAXIMUM  MATERIAL CONDI-<br>2X aaa C TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER<br>bbb H D 2X 3 TIPS RADIUS OF THE FOOT.<br>e MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>B l= 6X b : A −−− −−− 1.10 −−− −−− 0.043<br>ddd M C A-B D A1 0.00 −−− 0.10 0.000 −−− 0.004<br>TOP VIEW A2 0.70 0.90 1.00 0.027 0.035 0.039<br>b 0.15 0.20 0.25 0.006 0.008 0.010<br>C 0.08 0.15 0.22 0.003 0.006 0.009<br>A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086<br>A E 2.00 2.10 2.20 0.078 0.082 0.086<br>E1 1.15 1.25 1.35 0.045 0.049 0.053<br>e 0.65 BSC 0.026 BSC<br>L 0.26 0.36 0.46 0.010 0.014 0.018<br>L2 0.15 BSC 0.006 BSC<br>aaa 0.15 0.006<br>bbb 0.30 0.012<br>6X ccc C ccc 0.10 0.004<br>(tll, A1 C  A SEATINGPLANE Ma c === ddd 0.10 0.004<br>SIDE VIEW END VIEW GENERIC<br>MARKING DIAGRAM*<br>RECOMMENDED 6<br>SOLDERING FOOTPRINT*<br>6X 6X XXXM<br>0.30 0.66<br>1<br>Ta os 2.50 XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>0.65 yo (Note: Microdot may be in either location)<br>PITCH<br>**----- End of picture text -----**<br>


## DATE 11 DEC 2012 

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

   - *Date Code orientation and/or position may vary depending upon manufacturing location. 

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DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

**DOCUMENT NUMBER: 98ASB42985B** 

**DESCRIPTION: SC−88/SC70−6/SOT−363** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

## **SC−88/SC70−6/SOT−363** CASE 419B−02 ISSUE Y 

## DATE 11 DEC 2012 

|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|



Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. 

|**DOCUMENT NUMBER:**|**98ASB42985B**|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.|
|---|---|---|---|
|**DESCRIPTION:**|**SC−88/SC70−6/SOT−363**||**PAGE 2 OF 2**|



ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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