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semiconductors-discretes Toshiba

Found 1521 products. Showing up to 30 products per page (51 pages).

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DSF01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 500 mV, 2 A, 125 °C
Toshiba DSF01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 500 mV, 2 A, 125 °C

DSR01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C
Toshiba DSR01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C

DSR01S30SL,L3F(T: Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C
Toshiba DSR01S30SL,L3F(T

Small Signal Schottky Diode, Single, 30 V, 100 mA, 620 mV, 2 A, 125 °C

GT30N135SRA,S1E(S: IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
Toshiba GT30N135SRA,S1E(S

IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins

GT50J325: IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins
Toshiba GT50J325

IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins

HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

HN1D03FU,LF(T: Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A
Toshiba HN1D03FU,LF(T

Small Signal Diode, Dual Common Cathode, Dual Common Anode, 85 V, 100 mA, 1.2 V, 1.6 ns, 2 A

HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

HN2S01FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C
Toshiba HN2S01FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 15 V, 100 mA, 500 mV, 1 A, 125 °C

HN2S03FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba HN2S03FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C

HN2S03FU(TE85L,F): Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C
Toshiba HN2S03FU(TE85L,F)

Small Signal Schottky Diode, Triple Isolated, 25 V, 50 mA, 550 mV, 1 A, 125 °C

HN4B102J(TE85L,F): Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W
Toshiba HN4B102J(TE85L,F)

Bipolar Transistor Array, NPN, PNP, 30 V, 30 V, 2 A, 2 A, 1.1 W

JDH2S02SL,L3F(T: Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C
Toshiba JDH2S02SL,L3F(T

Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C

JDH2S02SL,L3F(T: Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C
Toshiba JDH2S02SL,L3F(T

Small Signal Schottky Diode, Single, 10 V, 10 mA, 240 mV, 125 °C

MT3S111(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount
Toshiba MT3S111(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount

RFM04U6P(TE12L,F): RF FET Transistor, 16 V, 2 A, 7 W, SMD
Toshiba RFM04U6P(TE12L,F)

RF FET Transistor, 16 V, 2 A, 7 W, SMD

RN1102,LF(CT: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1102,LF(CT

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

RN1301,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Toshiba RN1301,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

RN1302,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1302,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

RN1401,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Toshiba RN1401,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm

RN1402,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1402,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm

RN1405,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
Toshiba RN1405,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm

SSM14N956L,EFF(S: Dual MOSFET, N Channel, 1000 µohm
Toshiba SSM14N956L,EFF(S

Dual MOSFET, N Channel, 1000 µohm

SSM14N956L,EFF(S: Dual MOSFET, N Channel, 1000 µohm
Toshiba SSM14N956L,EFF(S

Dual MOSFET, N Channel, 1000 µohm

SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount

SSM3J112TU,LF(T: Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount
Toshiba SSM3J112TU,LF(T

Power MOSFET, P Channel, 30 V, 1.1 A, 0.39 ohm, SOT-323F, Surface Mount