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Semiconductors - Discretes Toshiba

Found 191 products. Showing up to 30 products per page.

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2SK3799: Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole
Toshiba 2SK3799

Power MOSFET, N Channel, 900 V, 8 A, 1.3 ohm, TO-220SIS, Through Hole

2SK3878(F): Power MOSFET, N Channel, 900 V, 9 A, 1.3 ohm, TO-3PN, Through Hole
Toshiba 2SK3878(F)

Power MOSFET, N Channel, 900 V, 9 A, 1.3 ohm, TO-3PN, Through Hole

2SK4017(Q): Power MOSFET, N Channel, 60 V, 5 A, 0.1 ohm, TO-251AA, Through Hole
Toshiba 2SK4017(Q)

Power MOSFET, N Channel, 60 V, 5 A, 0.1 ohm, TO-251AA, Through Hole

CCS15S30,L3F(T: Small Signal Diode, Single, 30 V, 1.5 A, 390 mV, 5 A
Toshiba CCS15S30,L3F(T

Small Signal Diode, Single, 30 V, 1.5 A, 390 mV, 5 A

CMS01(TE12L,Q,M): Schottky Rectifier, 30 V, 3 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS01(TE12L,Q,M)

Schottky Rectifier, 30 V, 3 A, Single, SMD, 2 Pins, 370 mV

CMS04(TE12L,Q,M): Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS04(TE12L,Q,M)

Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 370 mV

CMS05(TE12L,Q,M): Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 450 mV
Toshiba CMS05(TE12L,Q,M)

Schottky Rectifier, 30 V, 5 A, Single, SMD, 2 Pins, 450 mV

CMS06(TE12L,Q,M): Schottky Rectifier, 30 V, 2 A, Single, SMD, 2 Pins, 370 mV
Toshiba CMS06(TE12L,Q,M)

Schottky Rectifier, 30 V, 2 A, Single, SMD, 2 Pins, 370 mV

CMS11(TE12L,Q,M): Schottky Rectifier, 40 V, 2 A, Single, SMD, 2 Pins, 550 mV
Toshiba CMS11(TE12L,Q,M)

Schottky Rectifier, 40 V, 2 A, Single, SMD, 2 Pins, 550 mV

CRG07(TE85L,Q,M): Standard Recovery Diode, 100 V, 700 mA, Single, 1.1 V, 15 A
Toshiba CRG07(TE85L,Q,M)

Standard Recovery Diode, 100 V, 700 mA, Single, 1.1 V, 15 A

CRS01(TE85L,Q,M): Schottky Rectifier, 30 V, 1 A, Single, SMD, 2 Pins, 360 mV
Toshiba CRS01(TE85L,Q,M)

Schottky Rectifier, 30 V, 1 A, Single, SMD, 2 Pins, 360 mV

CRS04: Schottky Rectifier, Miniature, 40 V, 1 A, Single, 3-2A1A, 2 Pins, 490 mV
Toshiba CRS04

Schottky Rectifier, Miniature, 40 V, 1 A, Single, 3-2A1A, 2 Pins, 490 mV

CRS05: Schottky Rectifier, Miniature, 30 V, 1 A, Single, 3-2A1A, 2 Pins, 450 mV
Toshiba CRS05

Schottky Rectifier, Miniature, 30 V, 1 A, Single, 3-2A1A, 2 Pins, 450 mV

CRS05(TE85L,Q,M): Schottky Rectifier, 30 V, 1 A, Single, S-FLAT, 2 Pins, 450 mV
Toshiba CRS05(TE85L,Q,M)

Schottky Rectifier, 30 V, 1 A, Single, S-FLAT, 2 Pins, 450 mV

CRS06: Schottky Rectifier, Miniature, 20 V, 1 A, Single, 3-2A1A, 2 Pins, 360 mV
Toshiba CRS06

Schottky Rectifier, Miniature, 20 V, 1 A, Single, 3-2A1A, 2 Pins, 360 mV

CRS09: Schottky Rectifier, 30 V, 1.5 A, Single, 3-2A1A, 2 Pins, 460 mV
Toshiba CRS09

Schottky Rectifier, 30 V, 1.5 A, Single, 3-2A1A, 2 Pins, 460 mV

CTS05S30,L3F(T: Small Signal Schottky Diode, Single, 30 V, 500 mA, 470 mV, 2 A, 125 °C
Toshiba CTS05S30,L3F(T

Small Signal Schottky Diode, Single, 30 V, 500 mA, 470 mV, 2 A, 125 °C

CTS05S40,L3F(T: Small Signal Schottky Diode, Single, 40 V, 500 mA, 600 mV, 2 A, 125 °C
Toshiba CTS05S40,L3F(T

Small Signal Schottky Diode, Single, 40 V, 500 mA, 600 mV, 2 A, 125 °C

CTS521,L3F(T: Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C
Toshiba CTS521,L3F(T

Small Signal Schottky Diode, Single, 30 V, 200 mA, 500 mV, 1 A, 125 °C

CUS08F30,H3F(T: Small Signal Schottky Diode, Single, 30 V, 800 mA, 450 mV, 5 A, 125 °C
Toshiba CUS08F30,H3F(T

Small Signal Schottky Diode, Single, 30 V, 800 mA, 450 mV, 5 A, 125 °C

CUS10F30,H3F(T: Small Signal Schottky Diode, Single, 30 V, 1 A, 500 mV, 5 A, 125 °C
Toshiba CUS10F30,H3F(T

Small Signal Schottky Diode, Single, 30 V, 1 A, 500 mV, 5 A, 125 °C

CUS10S30,H3F(T: Small Signal Schottky Diode, Single, 30 V, 1 A, 450 mV, 5 A, 125 °C
Toshiba CUS10S30,H3F(T

Small Signal Schottky Diode, Single, 30 V, 1 A, 450 mV, 5 A, 125 °C

GT30N135SRA,S1E(S: IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins
Toshiba GT30N135SRA,S1E(S

IGBT, 60 A, 2.15 V, 348 W, 1.35 kV, TO-247, 3 Pins

GT50J325: IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins
Toshiba GT50J325

IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 Pins

HN4B102J(TE85L,F): Bipolar Transistor Array, NPN, PNP, 30 V, 2 A, 1.1 W, 40 hFE, SOT-25
Toshiba HN4B102J(TE85L,F)

Bipolar Transistor Array, NPN, PNP, 30 V, 2 A, 1.1 W, 40 hFE, SOT-25

MT3S111(TE85L,F): Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 160 mW, TO-236, Surface Mount
Toshiba MT3S111(TE85L,F)

Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 160 mW, TO-236, Surface Mount

RFM04U6P(TE12L,F): RF FET Transistor, 16 V, 2 A, 7 W, SMD
Toshiba RFM04U6P(TE12L,F)

RF FET Transistor, 16 V, 2 A, 7 W, SMD

RN1102,LF(CT: Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio)
Toshiba RN1102,LF(CT

Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio)

RN1301,LF(T: Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 (Ratio)
Toshiba RN1301,LF(T

Bipolar Pre-Biased / Digital Transistor, NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 (Ratio)

RN1302,LF(T: Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Toshiba RN1302,LF(T

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm