XP261N70023R-G

## **XP261N70023R-G** 

ETR11057-001a 

## N-channel MOSFET 60V, 0.15A 

## ■FEATURES 

On-State Resistance : RDS(on)=5Ω @VGS =10V Driving voltage : 4.5V Environmentally Friendly : EU RoHS Compliant, Pb Free 

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■ EQUIVALENT CIRCUIT<br>3<br>1 2<br>ee)<br>**----- End of picture text -----**<br>


## ■APPLICATIONS 

●Switching 

## ■ PIN CONFIGURATION 

●SOT-323-3A 

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Drain<br>3<br>1 2<br>Gate Source<br>**----- End of picture text -----**<br>


## ■ PRODUCT NAME 

|PRODUCT NAME|PACKAGE|ORDER UNIT|
|---|---|---|
||SOT-323-3A|3,000pcs/ Reel|



## ■ABSOLUTE MAXIMUM RATINGS 

Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (DC) ID 0.15 A Drain Current(Pulse)[(*1)] IDP 0.3 A Channel Power Dissipation[(*2)] Pd 0.35 W Junction Temperature TJ 150 ℃ ~~==55~~ Storage Temperature Tstg -55~150 ℃ *(1) PW≦10μs,duty cycle≦1% 

*(*2) When implemented on a PCB defined by JESD51-7 

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## **XP261N70023R-G** —_— ss, ■ELECTRICAL CHARACTERISTICS 

Ta=25℃ 

|PARAMETER<br>~~a~~|SYMBOL<br>~~a~~|TEST CONDITIONS<br>~~a~~|MIN.<br>~~a~~|TYP.<br>~~a~~|MAX.<br>~~a~~|UNITS<br>~~a~~|
|---|---|---|---|---|---|---|
|Drain-Source Breakdown Voltage<br>~~a~~|V(BR)DSS<br>~~a~~|ID= 250μA, VGS= 0V<br>~~a~~|60<br>~~a~~|-<br>~~a~~|-<br>~~a~~|V<br>~~a~~|
|Drain-Source Leakage Current|IDSS|VDS= 60V, VGS= 0V|-|-|1|μA|
|Gate-Source Leakage Current|IGSS|VGS= ±20V, VDS= 0V|-|-|±10|μA|
|Gate Threshold Voltage|VGS(off)|ID= 250uA, VDS= VGS|0.9|1.5|2.1|V|
|Drain-Source On Resistance|RDS(on)|VGS= 10V, ID= 100mA|-|3|5|Ω|
|||VGS= 4.5V, ID= 100mA|-|3.5|5.5|Ω|
|Input Capacitance|Ciss|VDS=20V, VGS=0V<br>f=1MHz<br>~~i~~|-|18|-|pF|
|Output Capacitance<br>~~i~~|Coss<br>~~i~~||-<br>~~i~~|4.5<br>~~i~~|-<br>~~i~~|pF<br>~~i~~|
|Reverse Transfer Capacitance<br>~~i~~|Crss<br>~~i~~||-<br>~~i~~|1.5<br>~~i~~|-<br>~~i~~|pF<br>~~i~~|
|Turn-on DelayTime|td(on)|VDD= 10V, ID= 100mA<br>VGS= 10V<br>~~SSS~~|-|9|-|ns|
|Rise Time|tr||-|4|-|ns|
|Turn-off DelayTime|td(off)||-|30|-|ns|
|Fall Time<br>~~==~~|tf<br>~~==~~||-<br>~~SSS~~|9<br>~~SSS~~|-<br>~~SSS~~|ns<br>~~SSS~~|
|Total Gate Charge<br>~~==~~|Qg<br>~~==~~|VDS= 20V, ID= 100mA<br>VGS= 10V<br>~~SSS~~|-<br>~~SSS~~|0.38<br>~~SSS~~|-<br>~~SSS~~|nC<br>~~SSS~~|
|Gate-Source Charge<br>~~==~~|Qgs<br>~~==~~||-<br>~~SSS~~|0.06<br>~~SSS~~|-<br>~~SSS~~|nC<br>~~SSS~~|
|Gate-Drain Charge<br>~~==~~|Qgd<br>~~==~~||-<br>~~SSS~~|0.16<br>~~SSS~~|-<br>~~SSS~~|nC<br>~~SSS~~|
|Diode Forward Voltage<br>~~==~~|VSD<br>~~==~~|IS= 100mA, VGS= 0V<br>~~SSS~~|-<br>~~SSS~~|0.8<br>~~SSS~~|1.2<br>~~SSS~~|V<br>~~SSS~~|



## ■NOTES ON USE 

1. Please use this IC within the absolute maximum ratings. 

Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 

2. Torex places an importance on improving our products and their reliability. 

- We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 

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**XP261N70023R-G** 

## ■TYPICAL PERFORMANCE CHARACTERISTICS 

- (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Gate-Source Voltage 

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0.30<br>10V Ta=25℃<br>0.25<br>4.5V<br>0.20 — Jo<br>3.0V<br>0.15<br>0.10<br>VGS=2.5V<br>0.05<br>fo — _——<br>B L<br>0.00<br>0.0 0.5 1.0 1.5 2.0<br>Drain-Source Voltage: VDS (V)<br>(A)<br>D<br>Drain Current: I<br>**----- End of picture text -----**<br>


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1<br>VDS=10V<br>Ta=125℃<br>0.1 2 = SS<br>25℃<br>0.01 =f -25℃<br>A<br>0.001<br>0 1 2 3 4<br>Gate-Source Voltage: VGS (V)<br>(A)<br>D<br>Drain Current : I<br>**----- End of picture text -----**<br>


- (3) Drain-Source On Resistance vs. Gate-Source Voltage (4) Drain-Source On Resistance vs. Ambient Temperature 

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15<br>Ta=25℃<br>12<br>9<br>6<br>ID=100mA<br>3<br>0<br>0 2 4 6 8 10<br>Gate-Source Voltage: VGS (V)<br>(on) (Ω)<br>DS<br>Drain-Source On Resistance: R<br>**----- End of picture text -----**<br>


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10<br>8 TEE EEL<br>VGS=4.5V<br>6<br>SEHRRED?<br>4<br>10V<br>Pe e r<br>2 e t<br>ID=100mA<br>0 elit tii<br>-50 0 50 100 150<br>Ambient Temperature: Ta (℃)<br>(on) (Ω)<br>DS<br>Drain-Source On Resistance: R<br>**----- End of picture text -----**<br>


- (5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage 

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15<br>Ta=25℃<br>12<br>9<br>6<br>4.5V<br>3<br>VGS=10V<br>0<br>0.00 0.05 0.10 0.15 0.20 0.25 0.30<br>Drain Current: ID (A)<br>(on) (Ω)<br>DS<br>Drain-Source On Resistance: R<br>**----- End of picture text -----**<br>


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1<br>Ta=125℃<br>0.1<br>25℃<br>0.01 -25℃<br>Eefiae<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>Diode Forward Voltage: VSD (V)<br>(A)<br>S<br>Source Current: I<br>**----- End of picture text -----**<br>


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## ■TYPICAL PERFORMANCE CHARACTERISTICS 

- (7) Ciss, Coss, Crss vs. Drain-Source Voltage (8) Gate-Source Voltage vs. Gate Charge 

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100<br>f=1MHz, Ta=25℃<br>——— Ciss<br>a ee<br>10<br>S S<br>__<br>Coss<br>——<br>[N e Se<br>1 t d<br>Crss<br>S o<br>eo<br>Oe<br>0.1<br>0 10 20 30 40 50 60<br>Drain-Source Voltage: VDS (V)<br>(9) Area of Safe Operation<br>1<br>(VRGSDS=10V)(on) 100µs<br>Limit<br>0.1 EHSRt 1ms<br>10ms<br>PA Tit tT TIN NE ONT<br>Vil DC Operation RNA 100ms<br>0.01 1s<br>Ta=25℃<br>Single pulse<br>Mounted on a FR4 board<br>(8700mm2 x 1.6mm)<br>a eeTS<br>0.001<br>0.1 1 10 100<br>Drain-Source Voltage: VDS (V)<br>Capacitance: Ciss, Coss, Crss (pF)<br>(A)<br>D<br>Drain Current: I<br>**----- End of picture text -----**<br>


## (9) Area of Safe Operation 

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10<br>VDS=20V, ID=100mA<br>8 p T<br>- [71]<br>6 e eeef|\<br>4 eeA<br>ee ee<br>2 ee<br>P77 i dT<br>TJ=25℃<br>oft e<br>0<br>0.0 0.1 0.2 0.3 0.4 0.5<br>Gate Charge: Qg (nC)<br>(V)<br>GS<br>Gate-Source Voltage: V<br>**----- End of picture text -----**<br>


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**XP261N70023R-G** 

## ■PACKAGING INFORMATION 

For the latest package information go to, www.torexsemi.com/technical-support/packages 

PACKAGE OUTLINE / LAND PATTERN THERMAL CHARACTERISTICS SOT-323-3A SOT-323-3A PKG JESD51-7 Board SOT-323-3A Power Dissipation ■MARKING RULE ~~[a]~~ ●SOT-323-3A SOT-323-3A ①,②,③represents product series 3 MARK PRODUCT SERIES ① ② ③ ① ② ③ ④ ⑤ 6 1 N XP261N7002**-G ~~=~~ 1 2 ④,⑤ represents production lot number。 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated (G，I，J，O，Q，W excluded) 

*No character inversion used 

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1. The product and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 

2. The information in this datasheet is intended to illustrate the operation and characteristics of our products. We neither make warranties or representations with respect to the accuracy or completeness of the information contained in this datasheet nor grant any license to any intellectual property rights of ours or any third party concerning with the information in this datasheet. 

3. Applicable export control laws and regulations should be complied and the procedures required by such laws and regulations should also be followed, when the product or any information contained in this datasheet is exported. 

4. The product is neither intended nor warranted for use in equipment of systems which require extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss of human life, bodily injury, serious property damage including but not limited to devices or equipment used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and other transportation industry and 5) safety devices and safety equipment to control combustions and explosions. Do not use the product for the above use unless agreed by us in writing in advance. 

5. Although we make continuous efforts to improve the quality and reliability of our products; nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal injury and/or property damage resulting from such failure, customers are required to incorporate adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention features. 

6. Our products are not designed to be Radiation-resistant. 

7. Please use the product listed in this datasheet within the specified ranges. 

8. We assume no responsibility for damage or loss due to abnormal use. 

9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex Semiconductor Ltd in writing in advance. 

TOREX SEMICONDUCTOR LTD. 

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