TLX9165T(TPL,F(O

TLX9165T 

Photocouplers Photorelay 

## TLX9165T 

## 1. Applications 

- Battery Control in Automotive Equipment 

- Fuel Battery Control in Automotive Equipment 

- Application for Electrical Vehicle 

## 2. General 

Toshiba TLX9165T consists of an infrared emitting diode optically coupled to a photo-MOSFET in a 10pin SO16LT package. 

This coupler uses high voltage MOSFET between output terminals. 

It adequate for the automotive control applications with a battery voltage of 1500 V or less in an environment with a pollution degree 2 since the creepage distance on the detector side is 7.5 mm or more. 

## 3. Features 

- (1) Normally opened (1-Form-A) 

- (2) Peak off state voltage: 1800 V (min) 

- (3) Trigger LED current: 3 mA (max) 

- (4) ON-state current: 30 mA (max) 

- (5) ON-state resistance: 340 Ω (max)(@t < 1 s) 

- (6) Isolation voltage: 5000 Vrms (min) 

- (7) Clearance distance: 8 mm (min) 

- (8) Creepage distance: 8 mm (min) 

- (9) Insulation thickness: 0.4 mm (min) 

- (10) Outer resin: CTI > 600 

- (11) AEC-Q101 qualified 

## 4. Packaging and Pin Assignment 

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1:  NC<br>2:  NC<br>3:  NC<br>4:  Anode<br>5:  Cathode<br>6:  Anode<br>7:  NC<br>8:  NC<br>9:  Drain<br>16: Drain<br>**----- End of picture text -----**<br>


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11-10Q1A<br>**----- End of picture text -----**<br>


Start of commercial production 2025-05 

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©2026 

2026-04-07 Rev.2.0.A 

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TLX9165T 

## 5. Internal Circuit 

## 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 

) 

||Characteristics|Characteristics|Symbol|Note|Rating|Unit|
|---|---|---|---|---|---|---|
|LED|Input forward current<br>~~a~~||IF<br>~~a~~|~~a~~|30<br>~~a~~|mA<br>~~a~~<br>~~oD~~|
||Input forward current derating<br>(Ta ≥100<br>)<br>~~GG~~||∆IF/∆Ta<br>~~GG~~|~~GG~~|-0.8<br>~~GG~~|mA/<br>~~GG~~<br>~~oD~~|
||Input reverse voltage<br>~~GG~~||VR<br>~~GG~~|~~GG~~|5<br>~~GG~~|V<br>~~oD~~<br>~~GG~~|
||Input power dissipation<br>~~GQ~~||PD<br>~~GQ~~|~~GQ~~|50<br>~~GQ~~|mW<br>~~GQ~~|
||Input power dissipation derating<br>(Ta ≥100<br>)<br>~~GG~~||∆PD/∆Ta<br>~~GG~~|~~GG~~|-1.3<br>~~GG~~|mW/<br>~~GG~~|
||Junction temperature<br>~~cc~~||Tj<br>~~cc~~|~~cc~~<br>~~ee~~<br>~~ee~~|135<br>~~cc~~<br>~~ee~~<br>|~~cc~~<br>~~eeee~~<br>|
|Detector<br>~~pO~~|ON-state current<br>~~pO~~|Ta= 25|ION|~~ee~~<br>~~ee~~<br>~~a~~|30<br>~~ee~~<br><br>|mA<br>~~eeee~~<br><br>~~ee~~<br>|
|||Ta= 105||~~ee~~<br>~~ee~~<br>~~a~~|12<br>~~ee~~<br>~~ee~~<br>|mA<br>~~eeee~~<br>~~ee~~<br>~~ee~~<br>|
|||Ta= 125||~~ee~~<br>~~a ee~~|6<br><br><br>~~ee~~|mA<br>~~ee~~<br><br>~~ee~~<br>~~ee~~|
||ON-state current derating<br>~~pO~~|Ta ≥45|∆ION/∆Ta|~~ee~~|-0.3<br>~~ee~~|mA/<br>~~ee~~|
||ON-state current (Peak)<br>~~pO~~|Ta= 25|IONpk|(Note 1)<br>~~ee~~<br>~~|~~|90<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
|||Ta= 105|||36<br>~~ee~~<br>~~|~~|mA<br>~~ee~~<br>|
|||Ta= 125|||18<br>~~|CT~~|mA<br>~~CT~~|
||Avalanche current<br>~~GQ~~||IAV<br>~~GQ~~|(Note 2)<br>~~|~~<br>~~GQ~~|0.6<br>~~|~~<br>~~GQ~~|mA<br><br>~~GQ~~|
||Output power dissipation<br>~~GG~~||PO<br>~~GG~~<br>~~GG~~|~~GG~~<br>~~GG~~|600<br>~~GG~~<br>~~GG~~|mW<br>~~GG~~<br>~~ed~~|
||Output power dissipation derating<br>(Ta ≥47<br>)<br>~~©~~||∆PO/∆Ta<br>~~©~~<br>~~GG~~|~~©~~<br>~~GG~~|-7<br>~~©~~<br>~~GG~~|mW/<br>~~©~~<br>~~ed~~<br>~~cc~~|
||Junction temperature<br>~~GC~~||Tj<br>~~GG~~<br>~~GC~~|~~GG~~<br>~~GC~~|135<br>~~GG~~<br>~~GC~~<br>~~cc~~|~~ed~~<br>~~GC~~<br>~~cc~~<br>~~cc~~|
|Common<br>~~a~~|Storage temperature<br>~~GG~~||Tstg<br>~~GG~~|~~GG~~|-55 to 150<br>~~GG~~<br>~~cc~~|~~cc~~<br>~~GG~~<br>~~cc~~<br>~~cc~~|
||Operating temperature<br>~~GG~~<br>~~a~~||Topr<br>~~GG~~|~~GG~~|-40 to 125<br>~~cc~~<br>~~GG~~|~~cc~~<br>~~GG~~<br>~~cc~~<br>~~cc~~|
||Lead soldering temperature<br>(10 s)<br>~~GC~~<br>~~a~~||Tsol<br>~~GC~~|~~GC~~|260<br>~~GC~~|~~cc~~<br>~~GC~~<br>~~cc~~|
||Isolation voltage<br>(AC, 60 s, R.H.≤60%)<br>~~a~~||BVS|(Note 3)|5000|Vrms<br>~~cc~~|



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 

Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on. Note 1: Exponential curve, pulse width < 1 ms, f ≤ 150 Hz 

Note 2: 1min (max continuous), Duty cycle=0.1 %, 5 time over lifetime. 

Note 3: LED pins are shorted together. Detector pins are also shorted together. 

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2026-04-07 Rev.2.0.A 

TLX9165T 

## 7. Recommended Operating Conditions (Note) 

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**----- Start of picture text -----**<br>
Characteristics Symbol Note Min Typ. Max Unit<br>GO Supply voltage VDD 1500 V<br>GG Input forward current IF 5 10 20 mA<br>a ON-state current GO ION Oe 30 mA<br>DCO Operating temperature Topr -40 125<br>Note: The recommended operating conditions are given as a design guide necessary to obtain the intended<br>performance of the device. Each parameter is an independent value. When creating a system design using<br>this device, the electrical characteristics specified in this data sheet should also be considered.<br>**----- End of picture text -----**<br>


## 8. Electrical Characteristics (Unless otherwise specified, Ta = 25 

## ) 

|~~——__——_——EEEEE~~|Characteristics<br>~~——__——_——EEEEE~~|Symbol<br>~~——__——_——EEEEE~~|Note<br>~~——__——_——EEEEE~~|Test Condition<br>~~——__——_——EEEEE~~|Min<br>~~——__——_——EEEEE~~|Typ.<br>~~——__——_——EEEEE~~|Max<br>~~——__——_——EEEEE~~|Unit<br>~~——__——_——EEEEE~~|
|---|---|---|---|---|---|---|---|---|
|LED<br>~~——__——_——EEEEE~~<br>~~po~~<br>~~po~~|Input forward voltage<br>~~——__——_——EEEEE~~<br>~~po~~|VF<br>~~——__——_——EEEEE~~<br>~~po~~<br>|~~——__——_——EEEEE~~<br>~~po |~~|IF= 10 mA<br>~~——__——_——EEEEE~~<br>~~|~~|1.5<br>~~——__——_——EEEEE~~|1.65<br>~~——__——_——EEEEE~~|1.8<br>~~——__——_——EEEEE~~|V<br>~~——__——_——EEEEE~~|
||||~~——__——_——EEEEE~~<br>~~po |~~<br>|IF= 10 mA, Ta= -40 to 125<br>~~——__——_——EEEEE~~<br>~~|~~<br>|1.4<br>~~——__——_——EEEEE~~<br>~~ee~~<br>|~~——__——_——EEEEE~~<br>~~ee~~<br>|1.95<br>~~——__——_——EEEEE~~<br>~~ee~~<br>|V<br>~~——__——_——EEEEE~~<br>|
||Input reverse current<br>~~——__——_——EEEEE~~<br>~~eG~~<br>~~po~~|IR<br>~~——__——_——EEEEE~~<br>~~po~~<br>~~eG~~<br>|~~——__——_——EEEEE~~<br>~~po |~~<br>~~eG~~<br>|VR= 5 V<br>~~——__——_——EEEEE~~<br>~~|~~<br>~~eG~~<br>|~~——__——_——EEEEE~~<br>~~eG~~<br>~~ee~~<br>|~~——__——_——EEEEE~~<br>~~eG~~<br>~~ee~~<br>|10<br>~~——__——_——EEEEE~~<br>~~eG~~<br>~~ee~~<br>|µA<br>~~——__——_——EEEEE~~<br>~~eG~~<br>|
||Input capacitance<br>~~po |~~<br>~~po~~|Ct<br>~~|~~<br>|~~|~~<br>|V = 0 V, f = 1 MHz<br>~~|~~<br>|~~ee~~<br>~~|~~<br>|45<br>~~ee~~<br>~~|~~<br>|~~ee~~<br>~~|~~<br>|pF<br>~~|~~<br>|
|Detector<br>~~po~~<br>~~po~~|Output withstand voltage<br>~~po |~~<br>~~po ~~|VOFF<br>~~|~~<br> ~~eK~~|(Note 1)<br>~~|~~<br>~~eK~~<br>~~a~~|IOFF= 10µA, Ta= 25<br>~~|~~<br>~~eK~~<br>|1800<br>~~ee~~<br>~~|~~<br>~~eK~~<br>~~ee~~|~~ee~~<br>~~|~~<br>~~eK~~<br>~~ee~~|~~ee~~<br>~~|~~<br>~~eK~~<br>~~ee~~|V<br>~~|~~<br>~~eK~~|
|Detector<br><br>~~po~~|OFF-state current<br>~~|~~<br>~~po ~~|IOFF<br>~~|~~<br>|~~|~~<br><br>~~a~~<br>~~a~~<br>~~ee~~|VOFF= 1500 V, Ta= 25<br>~~|~~<br><br>~~Dc~~<br>~~**a**~~|~~|~~<br><br>~~Dc~~<br>~~ee~~<br>~~a~~~~**e**~~|~~|~~<br><br>~~Dc~~<br>~~ee~~<br>~~ee~~|0.1<br>~~|~~<br><br>~~Dc~~<br>~~ee~~<br>~~ee~~|µA<br>~~|~~<br><br>~~Dc~~<br>~~ee~~|
||||~~a ~~<br>~~ee~~|VOFF= 1500 V, Ta= -40 to 105<br> ~~**a**~~|~~ee~~<br>~~a~~~~**e**~~<br>~~e~~|~~ee~~<br>~~ee~~<br>~~ee~~|3<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~|
||||<br>~~ee~~|VOFF= 1500 V, Ta= -40 to 125<br> ~~**a**~~|~~a~~~~**e**~~<br>~~e~~|~~ee~~<br>~~ee~~|10<br>~~ee~~|µA<br>~~ee~~|
||Output capacitance<br>~~po~~|COFF<br>~~po~~|<br>~~ee~~<br>~~po~~|V = 0 V, f = 1 MHz<br> ~~**a**~~<br>~~po~~|~~a~~~~**e**~~<br>~~e~~<br>~~po~~|140<br>~~ee~~<br>~~ee~~<br>~~po~~|~~ee~~<br>~~po~~|pF<br>~~ee~~<br>~~po~~|



Note 1: Reliability test of applying high voltage is demonstrated at 1500V. 

## 9. Coupled Electrical Characteristics 

|Characteristics|Symbol<br>~~a~~|Test Condition<br>~~a~~<br>~~«~~|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|
|Trigger LED current|IFT<br>~~a~~<br>~~a~~|ION= 30 mA, Ta= 25<br>, t = 10 ms<br>~~a~~<br>~~«~~<br>~~a~~|||3|mA|
|||ION= 12 mA, Ta= -40 to 105<br>, t = 10 ms<br>~~a~~<br>~~«~~<br>~~a~~|||3||
|||ION= 6 mA, Ta= -40 to 125<br>, t = 10 ms<br>~~a~~<br>~~ce~~|~~ce~~|~~ce~~|3<br>~~ce~~||
|Return LED current<br>~~pK~~|IFC<br>~~pK~~<br>~~a~~|IOFF= 100µA, Ta= -40 to 125<br>, t = 40 ms<br>~~pK~~<br>~~a~~<br>~~<~~|0.05<br>~~pK~~|~~pK~~|~~pK~~|mA<br>~~pK~~|
|ON-state resistance|RON<br>~~a~~|ION= 30 mA, IF= 10mA, Ta= 25<br>, t < 1 s<br>~~a~~<br>~~<~~|~~TK~~|~~TK~~|340|Ω|
|||ION= 12 mA, IF= 10mA, Ta= -40 to 105<br>, t < 1 s<br>~~a~~<br>~~<~~<br>~~po~~<br>~~<~~|~~po~~<br>~~TK~~<br>~~e~~|~~po~~<br>~~TK~~|600<br>~~po~~||
|||ION= 6 mA, IF= 10mA, Ta= -40 to 125<br>, t < 1 s<br>~~a~~<br>~~<~~|~~TK~~<br>~~a~~<br>~~e~~|~~TK~~<br>~~a~~|680<br>~~a~~||



## 10. Isolation Characteristics (Ta = 25 

## ) 

|Characteristics|Symbol|Note|Test Condition|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|---|
|Total capacitance (input to output)<br>~~po~~|CS<br>~~po~~|(Note 1)<br>~~po~~|VS= 0 V, f = 1 MHz<br>~~po~~|~~po~~|0.9<br>~~po~~|~~po~~|pF<br>~~po~~|
|Isolation resistance<br>~~po~~|RS<br>~~po~~|(Note 1)<br>~~po~~|VS= 1000 V, R.H.≤60%<br>~~po~~|5×1010<br>~~po~~|1014<br>~~po~~|~~po~~|Ω<br>~~po~~|
|Isolation voltage<br>~~po~~|BVS<br>~~po~~|(Note 1)<br>~~po~~|AC, 60 s<br>~~po~~|5000<br>~~po~~|~~po~~|~~po~~|Vrms<br>~~po~~|



Note 1: This device is considered as a two-terminal device: Pins 1 to 8 are shorted together, and pins 9 and 16 are shorted together. 

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TLX9165T 

## 11. Switching Characteristics 

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Characteristics Symbol Test Condition Test Condition Min Typ. Max Unit<br>Turn-on time tON IF = 10 mA, Ta = 25  1 ms<br>eeee Turn-off time eee t ee OFF RVDDL = 20 k = 40 VΩ, ESp- |- | 1 | ms |<br>Turn-on time tON Ta = -40 to 125  1 ms<br>ee Turn-off time t ee OFF eo 1 ms<br>ee }-~{-]|| |<br>**----- End of picture text -----**<br>


Fig. 11.1 Switching Time Test Circuit and Waveform 

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TLX9165T 

## 12. Characteristics Curves (Note) 

Fig. 12.1 IF - Ta 

Fig. 12.3 IF - VF 

Fig. 12.5 VON - ION 

Fig. 12.2 ION - Ta 

Fig. 12.4 IFT - Ta 

Fig. 12.6 RON - Ta 

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TLX9165T 

Fig. 12.7   IOFF - Ta 

Fig. 12.8   tON, tOFF - IF 

Fig. 12.9   tON, tOFF - Ta 

Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 

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TLX9165T 

## Package Dimensions 

Unit: mm 

Weight: 0.41 g (typ.) 

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Package Name(s)<br>TOSHIBA: 11-10Q1A<br>**----- End of picture text -----**<br>


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TLX9165T 

## RESTRICTIONS ON PRODUCT USE 

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https://toshiba.semicon-storage.com/ 

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