TLX9152M(TPL,F(O
MOSFET Relay, AEC-Q101, SPST-NO (1 Form A), AC / DC, 900 V, 50 mA, SO16L-T, Surface Mount
- Manufacturer: TOSHIBA
- Product type: MOSFET Solid State Relays
- Contact Form: SPST-NO (1 Form A)
- Load Current: 50mA
- Load Voltage Max: 900V
- Isolation Voltage: 5kVrms
- I/O Capacitance Typ: 0.9pF
- On State Resistance Max: 250ohm
- Off State Leakage Current Max: 100nA
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 3.01 € |
| Current stock | 1000+ |
| Lead time | 30 days |
TLX9152M TOSHIBA Photocoupler Photorelay ## **TLX9152M** ## **1. Description** Toshiba TLX9152M consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SO16L-T package. This coupler uses high voltage MOSFET between output terminals, making it suitable for battery-related control applications. ## **2. Applications** - Battery Control in Automotive Equipment - Fuel Battery Control in Automotive Equipment - Application for Electrical Vehicle ## **3. Features** - Normally open (1-Form-A) device - Peak off-state voltage: 900 V (min) - Trigger LED current: 3 mA (max) - On-state current: 50 mA (max) - On-state resistance: 250Ω (max)(@t < 1s) - ● Isolation voltage: 5000 Vrms (min) - Clearance distance: 8 mm (min) - Creepage distance: 8 mm (min) - Insulation thickness: 0.4 mm (min) - Outer resin: CTI > 600 - AEC-Q101 qualified ## **4. Packing and Pin Assignments** 1: NC 2: NC 3: NC 4: Anode 5: Cathode 6: Anode 7: NC 8: NC 9: Drain 10: Drain 15: Drain 16: Drain **==> picture [48 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> 11-10N1A<br>**----- End of picture text -----**<br> Start of commercial production 2024-06 1 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **5. Intemal Circuit** 2 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25** `℃` **)** |~~ee~~|Characteristics<br>~~ee~~|Characteristics<br>~~ee~~|Symbol<br>~~ee~~<br>~~ee~~|Note<br>~~ee~~<br>~~ee~~|Rating<br>~~ee~~<br>~~eee~~|Unit<br>~~ee~~<br>~~ee~~| |---|---|---|---|---|---|---| |LED|Forward current<br>~~a~~||IF<br>~~ee~~<br>~~a~~<br>~~OO~~|~~ee ~~<br>~~a~~<br>~~OO~~|30<br> ~~eee ~~<br>~~a~~|mA<br> ~~ee~~<br>~~a~~| ||Forward current derating (Ta≥ 100℃)<br>~~a~~||∆IF/℃<br>~~a~~<br>~~OO~~|~~a~~<br>~~OO~~|-0.8<br>~~a~~|mA/℃<br>~~a~~| ||Reverse voltage<br>~~a~~||VR<br>~~OO~~<br>~~a~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~|5<br>~~a~~|V<br>~~a~~| ||Input Power Dissipation<br>~~a~~||PD<br>~~a~~<br>~~OO~~<br>~~OO~~|~~a~~<br>~~OO~~<br>~~OO~~|50<br>~~a~~|mW<br>~~a~~| ||Input Power Dissipation Derating (Ta≥ 100℃)<br>~~a~~||∆PD/℃<br>~~OO~~<br>~~a~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~|-1.3<br>~~a~~|mW/℃<br>~~a~~| ||Junction temperature<br>~~a~~||Tj<br>~~OO~~<br>~~a~~|~~OO~~<br>~~a~~|135<br>~~a~~|℃<br>~~a~~| |Detector|On-state current|Ta= 25℃<br>~~ee~~|ION||50|mA| |||Ta= 105℃<br>~~Se~~|||20|mA| |||Ta= 125℃|||10|mA| ||On-state current derating<br>~~a ~~<br>~~OO~~|Ta≥ 45℃<br> ~~OO~~<br>~~OO~~|ΔION/℃<br>~~OO~~|~~OO~~|-0.5<br>~~OO~~|mA/℃<br>~~OO~~| ||On-state current (Peak)<br>~~OO~~|Ta= 25℃<br>~~OO~~|IONpk<br>~~OO~~|(Note 1)<br>~~OO~~|150|mA| |||Ta= 105℃<br>~~OO~~<br>~~—~~<br>~~OO~~|||60<br>~~a~~<br>~~a~~|mA<br>~~a~~<br>~~a~~| |||Ta= 125℃<br>~~OO~~|||30<br>~~a~~|mA<br>~~a~~| ||Avalanche current<br>~~OO~~<br>~~a~~||IAV<br>~~a~~<br>~~OO~~<br>~~OO~~|(Note 2)<br>~~a~~<br>~~OO~~<br>~~OO~~|0.6<br>~~a~~<br>~~a~~<br>~~OO~~|mA<br>~~a~~<br>~~a~~| ||Output power dissipation<br>~~a~~||PO<br>~~OO~~<br>~~a~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~|600<br>~~a~~<br>~~OO~~|mW<br>~~a~~| ||Output power dissipation derating (Ta≥ 47℃)<br>~~a~~||ΔPO/℃<br>~~OO~~<br>~~a~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~|-7<br>~~OO~~<br>~~a~~<br>~~OO~~|mW/℃<br>~~a~~| ||Junction temperature<br>~~a~~||Tj<br>~~a~~<br>~~OO~~<br>~~OO~~|~~a~~<br>~~OO~~<br>~~OO~~|135<br>~~a~~<br>~~OO~~|℃<br>~~a~~| |Common Storage temperature|Common Storage temperature<br>~~a~~||Tstg<br>~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|-55 to 150<br>~~OO~~<br>~~a~~<br>~~OO~~|℃<br>~~a~~| ||Operating temperature<br>~~a~~||Topr<br>~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|-40 to 125<br>~~a~~<br>~~OO~~|℃<br>~~a~~| ||Lead solderingtemperature(10s)<br>~~a~~||Tsol<br>~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|~~OO~~<br>~~a~~<br>~~OO~~<br>~~OO~~|260<br>~~OO~~<br>~~a~~|℃<br>~~a~~| ||Isolation voltage(AC, 60 s, R.H. ≤ 60%)<br>~~a~~||BVs<br>~~OO~~<br>~~a~~<br>~~OO~~|(Note 3)<br>~~OO~~<br>~~a~~<br>~~OO~~|5000<br>~~a~~|Vrms<br>~~a~~| Note: This product is more sensitive than conventional products to electrostatic discharge (ESD). It is therefore all the more necessary to observe general precautions regarding ESD when handling this component. Note 1: Exponential curve, pulse width < 1ms, f ≤150Hz Note 2: 1min (max continuous), Duty cycle=0.1%, 5 time over lifetime. Note 3: LED pins are shorted together. Detector pins are also shorted together. 3 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **7. Recommended Operating Conditions (Note)** |Characteristics|Symbol|Min|Typ.|Max|Unit| |---|---|---|---|---|---| |Supply voltage|VDD|―|―|900|V| |Forward current|IF|5|10|20|mA| |On-state current|ION|―|―|50|mA| |Operating temperature|Topr|-40|―|125|℃| - Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. ## **8. Electrical Characteristics (Unless otherwise specified, Ta = 25** `℃` **)** |Characteristics|Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit| |---|---|---|---|---|---|---|---| |LED|Forward voltage|VF|IF= 10mA|1.5|1.65|1.8|V| ||||IF= 10 mA, Ta=-40 to 125℃|1.4|―|1.95|| ||Reverse current|IR|VR= 5 V|―|―|10|µA| ||Capacitance|CT|V = 0 V, f = 1MHz|―|45|―|pF| |Detector|DetectorOutput withstand voltage|VOFF|IOFF= 10 µA, Ta= 25℃|900|―|―|V| ||Off-state current|IOFF|VOFF= 900 V, Ta= 25℃|―|―|100|nA| ||||VOFF= 900 V, Ta= -40 to 105℃|―|―|1000|| ||||VOFF= 900 V, Ta= -40 to 125℃|―|―|5000|| ||Capacitance|COFF|V = 0 V, f = 1 MHz|―|60|―|pF| ## **9. Coupled Electrical Characteristics** |Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit| |---|---|---|---|---|---|---| |Trigger LED current|IFT|ION= 50 mA, Ta= 25℃, t = 10 ms|―|―|3|mA| |||ION= 20 mA, Ta= -40 to 105℃, t = 10 ms|―|―|3|| |||ION= 10 mA, Ta= -40 to 125℃, t = 10 ms|―|―|3|| |Return LED current|IFC|IOFF= 100 µA, Ta= -40 to 125℃, t = 40 ms|0.05|―|―|mA| |On-state resistance|RON|ION= 50 mA, IF= 10mA,<br>Ta= 25℃,t < 1 s|―|―|250|Ω| |||ION= 20 mA, IF= 10mA,<br>Ta= -40 to 105℃,t < 1 s|―|―|350|| |||ION= 10 mA, IF= 10mA,<br>Ta= -40 to 125℃,t < 1 s|―|―|400|| 4 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **10. Isolation Characteristics (Ta = 25** `℃` **)** |Characteristics|Symbol|Symbol<br>Note|Test Condition|Min|Typ.|Max|Unit| |---|---|---|---|---|---|---|---| |Capacitance input to output|CS|(Note1)|Vs = 0 V, f = 1MHz|―|0.9|―|pF| |Isolation resistance|RS|(Note1)|Vs = 1000V, R.H. ≤ 60 %|5×1010|1014|―|Ω| |Isolation voltage|BVs|(Note1) AC, 60 s|(Note1) AC, 60 s|5000|―|―|Vrms| Note1: Device considered a two-terminal device: Pins 1 to 8 shorted together, and 9, 10, 15 and 16 shorted together. ## **11. Switching Characteristics** |Characteristics|Symbol|Symbol<br>Note|Test Condition|Test Condition|Min|Typ.|Max|Unit| |---|---|---|---|---|---|---|---|---| |Turn on time|tON|(Note1)I|IF= 10 mA<br>RL= 20 kΩ<br>VDD= 40 V|Ta= 25℃|―|―|1|ms| |Turn off time|tOFF|(Note1)|||―|―|1|| |Turn on time|tON|(Note1)||Ta= -40 to 125℃|―|―|1|ms| |Turn off time|tOFF|(Note1)|||―|―|1|| Note1: Switching time test circuit 5 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **12. Characteristics Curves (Note)** **==> picture [31 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IF - Ta<br>**----- End of picture text -----**<br> **==> picture [38 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ION - Ta<br>**----- End of picture text -----**<br> **==> picture [279 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IF - VF IFT - Ta<br>**----- End of picture text -----**<br> **==> picture [286 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> VON - ION RON - Ta<br>**----- End of picture text -----**<br> 6 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M **==> picture [41 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IOFF - Ta<br>**----- End of picture text -----**<br> **==> picture [52 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> tON /tOFF - IF<br>**----- End of picture text -----**<br> **==> picture [59 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> tON /tOFF - Ta<br>**----- End of picture text -----**<br> Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **13. Package Dimensions** **==> picture [46 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Unit: mm<br>**----- End of picture text -----**<br> **==> picture [161 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> =<br>i a<br>Je<br>uuu eo od<br>**----- End of picture text -----**<br> ## Weight: 0.42g (typ.) Package Name(s) TOSHIBA: 11-10N1A 8 2024-06-01 Rev. 1.0 © 2024 Toshiba Electronic Devices & Storage Corporation TLX9152M ## **RESTRICTIONS ON PRODUCT USE** Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. - TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. - This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. - Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. **TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.** • **PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (** " **UNINTENDED USE** " **).** Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. **IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT.** For details, please contact your TOSHIBA sales representative or contact us via our website. - Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. - Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. - The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. - **ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.** - GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. - Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. - Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. **TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.** - https://toshiba.semicon storage.com/ 9 2024-06-01 © 2024 Toshiba Electronic Devices & Storage Corporation Rev. 1.0
Updated at April 29, 2026
Toshiba Electronic Devices and Storage Corporation is a premier global developer of innovative semiconductor solutions, recognized for its extensive expertise in power systems design and motor control. With decades of core competence, the company provides essential components that drive advancements across automotive, industrial, telecommunications, and consumer applications, prioritizing optimal power density and operational efficiency. Our extensive portfolio of Toshiba components is heavily focused on discrete semiconductors, reflecting the brand's industry-leading manufacturing capabilities. We feature a wide selection of high-performance Field Effect Transistors (FETs), prominently including a comprehensive range of single and dual MOSFETs designed to meet the rigorous power management demands of modern electronic projects. In addition to their renowned MOSFET technology, Toshiba offers a robust selection of reliable diodes and rectifiers, featuring high-speed Schottky diodes and small signal variants. This lineup is further complemented by precision bipolar transistors, single IGBTs, and solid state relays, providing design engineers with a versatile and dependable foundation for both sophisticated logic circuits and demanding power switching applications.
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