TLP4176G(TP,M,F)

TLP4176G 

TOSHIBA Photocoupler  Photorelay 

## **TLP4176G** 

## PBX 

## Telecommunication 

Unit: mm 

## ･ Modem FAX Cards, Modems In PC Measurement Instrumentation 

The TOSHIBA TLP4176GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. 

The TLP4176GA is suitable for the modem applications which require space savings. 

- 

   - 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch 

- 1-form-B 

- Peak off-state voltage: 350 V (min) 

- Trigger LED current: 3 mA (max) 

- On-state current: 120 mA (max) 

- On-state resistance: 25 Ω (max) 

- Isolation voltage: 1500 Vrms (min) 

- UL-recognized: UL 1577, File No.E67349 

## **Pin Configuration (top view)** 

|JEDEC|―|
|---|---|
|JEITA|―|
|TOSHIBA|11-5H1|



Weight: 0.1 g (typ.) 

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1: ANODE 

2: CATHODE 

- 3: DRAIN 

4: DRAIN 

Start of commercial production 2001-04 

> ©2026 1 Toshiba Electronic Devices & Storage Corporation 

2026-04-07 

TLP4176G 

## **= Absolute Maximum Ratings (Ta 25°C)** 

||Characteristics|Symbol|Rating|Unit|
|---|---|---|---|---|
|LED|Forward current|IF|50|mA|
||Forward current derating<br>(Ta ≥ 25°C)|∆IF/°C|−0.5|mA/°C|
||Peak forward current<br>(100μs pulse, 100 pps)|IFP|1|A|
||Reverse voltage|VR|5|V|
||Diode power dissipation|PD|50|mW|
||Diode power dissipation derating<br>(Ta ≥25°C)|△PD/°C|-0.5|mW/°C|
||Junction temperature|Tj|125|°C|
|Detector|Off-state output terminal voltage|VOFF|350|V|
||On-state current|ION|120|mA|
||On-state current derating<br>(Ta ≥ 25°C)|∆ION/°C|−1.2|mA/°C|
||Output power dissipation|PO|324|mW|
||Output power dissipation<br>derating (Ta ≥ 25°C)|ΔPO/ °C|−3.24|mW / °C|
||Junction temperature|Tj|125|°C|
|Operating temperature range||Topr|−40 to 85|°C|
|Storage temperature range||Tstg|−55 to 125|°C|
|Lead soldering temperature (10 s)||Tsol|260|°C|
|Isolation voltage<br>(AC, 60 s, R.H. ≤ 60 %)<br>(Note 1)||BVS|1500|Vrms|



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the 

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). 

- Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. 

## **Recommended Operating Conditions** 

|Characteristics|Symbol|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|
|Supply voltage|VDD|―|―|280|V|
|Forward current|IF|5|―|25|mA|
|On-state current|ION|―|―|120|mA|
|Operating temperature|Topr|−20|―|65|°C|



Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 

> ©2026 2 Toshiba Electronic Devices & Storage Corporation 

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TLP4176G 

## **Individual Electrical Characteristics (Ta = 25°C)** 

|**ivi**|**dual Electrical Character**|**istics (Ta**|**= 25°C)**|||||
|---|---|---|---|---|---|---|---|
||Characteristics|Symbol|Test Condition|Min|Typ.|Max|Unit|
|LED|Forward voltage|VF|IF =10 mA|1.0|1.15|1.3|V|
||Reverse current|IR|VR =5 V|||10|μA|
||Capacitance|CT|VF =0 V, f=1 MHz||30||pF|
|Detector|Off-state current|IOFF|VOFF =350 V, IF =5 mA|||1|μA|
||Capacitance|COFF|V=0 V, f=1 MHz, IF =5 mA||65||pF|



> ©2026 3 Toshiba Electronic Devices & Storage Corporation 

2026-04-07 

TLP4176G 

**= Coupled Electrical Characteristics (Ta 25°C)** 

Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFC IOFF = 10 μ A  1 3 mA Return LED current IFT ION = 120 mA 0.1   mA On-state resistance RON ION = 120 mA  15 25 Ω ~~SSE~~ **Isolation Characteristics (Ta = 25°C)** Characteristics Symbol Test Condition Min Typ. Max Unit Capacitance input to output CS VS = 0 V, f = 1 MHz  0.8  pF Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 5 × 10[10] 10[14]  Ω Isolation voltage BVS AC, 60 s 1500   Vrms ~~==~~ **= Switching Characteristics (Ta 25°C)** Characteristics Symbol Test Condition Min Typ. Max Unit Turn-on time tON RL = 200 Ω (Note 2)   1 ms Turn-off time tOFF VDD = 20 V, IF = 5 mA   3 ms ~~=~~ Note 2: Switching time test circuit IF VDD 1 4 RL IF VOUT VOUT 2 3 90% 10% tON tOFF ~~Cy~~ 

> ©2026 4 Toshiba Electronic Devices & Storage Corporation 

2026-04-07 

TLP4176G 

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IF – Ta  ION – Ta<br>100  PT] | ttt diy tid dl 280  Pt tT eT ET TT ET TT Ty<br>240<br>80  PCEECEECEE EE EEE EEEEEEEEEE<br>PCEELEELEELELL 200  HERE EERE EEE EE<br>60<br>PTET TTT PTT 160  EEE<br>40 20  PoPCEEEEECPOCCCPPIAI ST ASCE 120 80  BEERRCEPEEP EEEJPREEESCEEEEEESHt<br>40<br>PCEELEELEIC EL POP<br>0  PT ETE TL EL_L_LUEL 0  ne<br>− 20  0  20  40  60  80  100  120  − 20  0  20  40  60  80  100  120<br>Ambient temperature  Ta  (°C)  Ambient temperature  Ta  (°C)<br>IF – VF ION – VON<br>100 200<br>Ta  =  25°C  Ta  =  25°C<br>50<br>30<br>eeeaarcane= 100  SCE<br>10<br>5<br>sales) 000002 e e<br>3 0<br>1 PEATE=== pjfief|<br>0.5 === EEE − 100  at<br>0.3<br>Ee === == == or Aa<br>Yr [ | ee[AT tTeeyt tTeeyt e e teee<br>0.1 CORY EELELLE − 200  PEELE LELL.<br>0.6  0.8  1  1.2  1.4  1.6  1.8  − 2  − 1  0  1  2<br>Forward voltage  VF  (V)  On-state voltage  VON  (V)<br>RON – Ta  IFC – Ta<br>20  5<br>ION  =  120 mA  TELL ION  =  120 mA<br>t < 1s<br>4<br>15  Toe<br>“peo FCEELEELELLELL<br>3<br>tert COCA<br>10<br>SE 2  Ce<br>5  PCE Pore<br>1<br>PETE TET Ey Ty TY PC E RESELE TELELLLLCEST<br>0  PEELE ELLE 0  PEEECEPCEECEEL<br>− 20  0  20  40  60  80  100  − 40  − 20  0  20  40  60  80  100<br>Ambient temperature  Ta  (°C)  Ambient temperature  Ta  (°C)<br>  (mA)<br>F<br>  (mA)<br>ON<br>On-state current  I<br>Allowable forward current  I<br>  (mA)<br>  (mA)<br>F ON<br>Forward current  I On-state current  I<br>)<br>Ω<br>  (<br>  (mA)<br>ON<br>FC<br>On-state resistance  R Trigger LED current  I<br>**----- End of picture text -----**<br>


NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 

5 

©2026 

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TLP4176G 

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tON, tOFF – IF tON, tOFF – Ta<br>2000 1200<br>Ta  =  25°C  VDD  =  20 V, RL  =  200  Ω<br>1000 a VDD  =  20 V, RL  =  200  Ω 1000  P IF  =  5 mA  e tOFF<br>po Nes tOFF  Papp FA A<br>500 aee eel 800  EEE EERE EO<br>300 0<br>FE tON  600  Pi tt ttt Tey tt<br>100 La|)Nl N UT 400  P i tTe EEEEErtT Per  ELEtt<br>50 ae e e 200  EEEa  E E tON  —E<br>30 a P| [Perec]<br>1  3  5  10  30  50  100<br>− 0 40  PTT − 20  TTT 0  20  Te 40  ee 60  ey 80  | 100<br>Input current  IF  (mA)<br>Ambient temperature  Ta  (°C)<br>s)<br>µ s)<br>  ( μ<br>  (<br>OFF<br>, t OFF<br>ON , t<br>ON<br>Switching time  t<br>Switching time  t<br>**----- End of picture text -----**<br>


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IOFF – Ta<br>1000<br>VOFF  =  350 V<br>IF  =  5 mA<br>Ml=======<br>100 Cer<br>SSSee<br>10 SeCcseeeee<br>SSS SS<br>1 CEP<br>0  20  e 40  eer 60  80  100<br>Ambient temperature  Ta  (°C)<br>  (nA)<br>OFF<br>Off-state current  I<br>**----- End of picture text -----**<br>


NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 

6 Toshiba Electronic Devices & Storage Corporation 

©2026 

2026-04-07 

TLP4176G 

## **RESTRICTIONS ON PRODUCT USE** 

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2026-04-07