SRVUD620CTT4G

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## **-** Switch mode Power Rectifier 

## **ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS** 

## **DPAK Surface Mount Package** 

## **DPAK** 

**CASE 369C** 

## MURD620CT, NRVUD620CT, 1 SRVUD620CT, SNRVUD620CT 3 4 

1 4 3 ~~ee~~ **MARKING DIAGRAMS** AYWW AYWW U U 620TG S620TG ~~4) 4)~~ A = Assembly Location* Y = Year WW = Work Week U620T = Device Code (MURD/NRVUD/ SNRVUD620CT) US620T = Device Code (SRVUD620CT) G = Pb-Free Package 

These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. 

## **Features** 

- Ultrafast 35 Nanosecond Recovery Time 

- Low Forward Voltage Drop 

- Low Leakage 

- ESD Rating: 

   - ♦ Human Body Model = 3B (> 8 kV) 

   - ♦ Machine Model = C (> 400 V) 

- NRVUD, SRVUD and SNRVUD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

   - The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

## **ORDERING INFORMATION** 

- Case: Epoxy, Molded 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MURD620CTT4G|DPAK<br>(Pb-Free)|2,500 /<br>Tape & Reel|
|SRVUD620CTT4G|DPAK<br>(Pb-Free)|2,500 /<br>Tape & Reel|
|SNRVUD620CTT4G|DPAK<br>(Pb-Free)|2,500 /<br>Tape & Reel|



- Weight: 0.4 Gram (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds 

## **DISCONTINUED** (Note 1) 

|MURD620CTG|DPAK<br>(Pb-Free)|75 Units / Rail|
|---|---|---|
|NRVUD620CTG|DPAK<br>(Pb-Free)|75 Units / Rail|
|NRVUD620CTT4G|DPAK<br>(Pb-Free)|2,500 /<br>Tape & Reel|
|NRVUD620CTG-VF01|DPAK<br>(Pb-Free)|2,500 /<br>Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

Publication Order Number: **MURD620CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **October, 2025 − Rev. 16** 

**MURD620CT, NRVUD620CT, SRVUD620CT, SNRVUD620CT** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>(TC= 140°C)<br>Per Diode<br>Per Device|IF(AV)|3.0<br>6.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, Duty = 0.5, TC= 145°C)<br>Per Diode|IF|6.0|A|
|Non-Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)|IFSM|50|A|
|Operating Junction and Storage Temperature Range|TJ, Tstg|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** (Per Diode) 

|**THERMAL CHARACTERISTICS**(Per Diode)||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction-to-Case|R JC|9|°C/W|
|Thermal Resistance, Junction-to-Ambient (Note 1)|R JA|80|°C/W|



1. Rating applies when surface mounted on the minimum pad sizes recommended. 

**ELECTRICAL CHARACTERISTICS** (Per Diode) 

~~a~~ **Characteristic Symbol Value Unit** Maximum Instantaneous Forward Voltage Drop (Note 2) vF V (iF = 3 Amps, TC = 25 ° C) 1 (iF = 3 Amps, TC = 125 ° C) 0.96 (iF = 6 Amps, TC = 25 ° C) 1.2 (iF = 6 Amps, TC = 125 ° C) 1.13 ~~po~~ Maximum Instantaneous Reverse Current (Note 2) iR A (TJ = 25 ° C, Rated dc Voltage) 5 (TJ = 125 ° C, Rated dc Voltage) 250 ~~a~~ Maximum Reverse Recovery Time trr ns (IF = 1 Amp, di/dt = 50 Amps/ s, VR = 30 V, TJ = 25 ° C) 35 (IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25 ° C) 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product ~~i~~ 

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 

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## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 100<br>70 Soe eee ———— TJ = 175  ° C<br>a 10 a —<br>a e e —————<br>50<br>Os 1 =—— 150  SS ° C S S<br>100  ° C<br>30<br>20 PTTPEETT Ty 0.1 eea ESS ===<br>0.01<br>25  ° C<br>SSSSSSS8888993 0 == === = ===—<br>10 0.001<br>Coc ==<br>Se<br>7.0<br>aeee 0.0001<br>ee) 7 ee 0 20 40 60 80 100 120 140 160 180 200<br>5.0 ee VR, REVERSE VOLTAGE (V)<br>Pt 7A) Figure 2. Typical Leakage Current* (Per Leg)<br>3.0 PL tTTT| |ETdt 175  |TL °C |  AAALAY TJ  A = 25  | °C | * The curves shown are typical for the highest voltage device in thevoltage grouping. Typical reverse current for lower voltage selections<br>2.0 Saeeeee/)/ sone can be estimated from these curves if VR is sufficiently below rated<br>VR.<br>SRSSRer 150 °C / ss 100  eee °C 14<br>1.0 13 5.0 SINE<br>12 10 WAVE<br>0.7 S SEe | 11 EEE<br>ee ee ee 10 ee IPK/IAV = 20 dc<br>0.5 en 9.0 Hfee 7<br>Pt tT TT ue gE Tt 8.0 iYA<br>7.0 SQUARE<br>0.3 POE 6.0 a 74 aa WAVE<br>0.2 PLEEE 5.0 LeFP ee<br>4.0<br>ee oe 3.0 227 ee T J  = 175 °C<br>2.0<br>0.1 PTE Egg<br>1.0 DW 20 maa<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>0 Peeee<br>vF, INSTANTANEOUS VOLTAGE (V) 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>Figure 1. Typical Forward Voltage (Per Leg) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 3. Average Power Dissipation (Per Leg)<br>8.0 4.0<br>RATED VOLTAGE APPLIED RATED VOLTAGE APPLIED<br>7.0 R JC = 9 °C/W 3.5 R JA = 80 °C/W<br>pe fo<br>6.0 PT TT TJ = 175 °C 3.0 Pf tt SURFACE MOUNTED ON<br>5.0 PIN NL 2.5 SS MIN. PAD SIZE RECOMMENDED<br>dc<br>4.0 po} 2.0<br>SINE WAVE<br>dc<br>3.0 |EN OR W N 1.5 CEEER T J  = 175 °C<br>SQUARE WAVE<br>2.0 _ ~ 1.0 SINE WAVE SSN<br>aN eee OR<br>1.0 0.5 SQUARE WAVE<br>Ne ee “SL<br>0 0<br>PE EEE EEK LE _ |TSA<br>100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180 200<br>TC, CASE TEMPERATURE ( ° C) TA, AMBIENT TEMPERATURE ( ° C)<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE POWER DISSIPATION (WATTS)<br>F(AV)<br>P<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV) IF(AV)<br>**----- End of picture text -----**<br>


**Figure 4. Current Derating, Case (Per Leg)** 

**Figure 5. Current Derating, Ambient (Per Leg)** 

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**TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100<br>TJ = 25  ° C<br>S S<br>(a a<br>A | | | | | ft | ff<br>10<br>NSaennne0n<br>SS=SSSaSaa<br>| | | | ft | tf ft<br>1 PEE [LTT] | yy<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Typical Capacitance (Per Leg)** 

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## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|16|Rebranded the Data Sheet to**onsemi**format. MURD620CTG, NRVUD620CTG,<br>NRVUD620CTT4G, NRVUD620CTG-VF01 OPN marked as Discontinued.|10/15/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 1 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2011 

DATE 13 MAY 2026 

**DPAK−3 6.10x6.54x2.28, 2.29P** CASE 369C ISSUE K 

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GENERIC<br>MARKING DIAGRAM*<br>XXXXXXG AYWW<br>ALYWW XXX<br>XXXXXG<br>IC Discrete<br>XXXXXX = Device Code<br>A = Assembly Location<br>L = Wafer Lot<br>Y =  Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. GATE 3. CATHODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. MT1 PIN 1. GATE PIN 1. N/C PIN 1. ANODE PIN 1. CATHODE<br>2. MT2 2. COLLECTOR 2. CATHODE 2. CATHODE 2. ANODE<br>3. GATE 3. EMITTER 3. ANODE 3. RESISTOR ADJUST 3. CATHODE<br>4. MT2 4. COLLECTOR 4. CATHODE 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON10527D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: DPAK−3 6.10x6.54x2.28, 2.29P PAGE 2 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2011 

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