SNZF220DFT1G
EMI FILTER WITH ESD PROTECTION
- Manufacturer: ONSEMI
- Product type: Integrated Passive Filters
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.217 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## EMI Filter with ESD Protection ## NZF220DFT1G, SNZF220DFT1G ## **Features** - 2 EMI/RFI Bi-directional “Pi” Low-Pass Filters - ESD Protection Meets IEC61000-4-2 ## **CIRCUIT DESCRIPTION** **==> picture [99 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> Pin 4 Pin 5<br>Pin 3 Pin 2 Pin 1<br>(GND)<br>**----- End of picture text -----**<br> - Diode Capacitance: 7 − 10 pF - Zener/Resistor Line Capacitance: 22 20% pF - Low Zener Diode Leakage: 1 A Maximum - Zener Breakdown Voltage; 6 − 8 V - AEC-Q101 Qualified and PPAP Capable − SNZF220DFT1G **==> picture [44 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SC-88A<br>DF SUFFIX<br>CASE 419A<br>**----- End of picture text -----**<br> - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - These are Pb-Free Devices ## **Benefits** - Designed to suppress EMI/RFI Noise in Systems Subjected to Electromagnetic Interference - Nominal Cutoff Frequency of 220 MHz (per Figure 2) - Small Package Size Minimizes Parasitic Inductance, Thus a More “Ideal” Low Pass Filtering Response ## **Typical Applications** - Cellular Phones ## **MARKING DIAGRAM** **==> picture [47 x 76] intentionally omitted <==** **----- Start of picture text -----**<br> 5 4<br>FA D<br>1 2 3<br>**----- End of picture text -----**<br> FA = Specific Device Code D = Date Code = Pb-Free Package - Communication Systems - Computers - Portable Products with Input/Output Conductors **MAXIMUM RATINGS Rating Symbol Value Unit** ~~es ee es~~ Peak Power Dissipation (Note 1) PPK 14 W 8 20 s Pulse ~~es ee~~ Maximum Junction Temperature ~~eeee~~ TJ 150 ~~es~~ C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Between I/O Pins |**ORDERING INFORMATION**| |---| |**Device**<br>**Package**<br>**Shipping**†<br>NZF220DFT1G<br>SC-88A<br>(Pb-Free)<br>3000 / Tape &<br>Reel<br>**DISCONTINUED**(Note 1)<br>~~CT~~| - SNZF220DFT1G SC-88A 3000 / Tape & (Pb-Free) Reel - † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. **DISCONTINUED:** This device is not available. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. Publication Order Number: **1** Semiconductor Components Industries, LLC, 2011 **September, 2025 − Rev. 10** **NZF220DFT1/D** **NZF220DFT1G, SNZF220DFT1G** ## **ELECTRICAL CHARACTERISTICS** |**Symbol**<br>~~a~~|**Characteristic**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---| |VZ<br>~~a~~|Zener Breakdown Voltage, @ IZT= 1 mA|6.0|−|8.0|V| |Ir<br>~~a~~|Zener Leakage Current, @ VR= 3 V|N/A|−|1.0|A| |VF<br>~~a~~|Zener Forward Voltage, @ IF= 50 mA|N/A|−|1.5|V| |Capacitance<br>~~a~~|Zener Internal Capacitance, @ 0 V Bias|7.0|−|10|pF| |Capacitance<br>~~a~~|Zener/Resistor Array Line Capacitance<br>|17.6<br>|−<br>|26.4<br>|pF<br>| |Resistor<br>~~GO~~|Resistance<br>~~GO~~|90<br>~~GO~~|−<br>~~GO~~|110<br>~~GO~~|~~GO~~| |FC(Note 2)<br>~~a~~|Cutoff Frequency<br>~~a~~|−<br>~~a~~|220<br>~~a~~|−<br>~~a~~|MHz<br>~~a~~| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. 50 Source and 50 Lead Termination per Figure 2. ~~Q~~ Q ## **APPLICATIONS INFORMATION** ## **Suppressing Noise at the Source** - Filter all I/O signals leaving the noisy environment - Locate I/O driver circuits close to the connector - Use the longest rise/fall times possible for all digital signals ## **Reducing Noise at the Receiver** - Filter all I/O signals entering the unit - Locate the I/O filters as close as possible to the connector ## **Minimizing Noise Coupling** - Use multilayer PCBs to minimize power and ground inductance - Keep clock circuits away from the I/O connector - Ground planes should be used whenever possible - Minimize the loop area for all high speed signals - Provide for adequate power decoupling ## **ESD Protection** - Locate the suppression devices as close to the I/O connector as possible - Minimize the PCB trace length to the suppression device - Minimize the PCB trace length for the ground return for the suppression device **www.onsemi.com** ~~—~~ **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **NZF220DFT1G, SNZF220DFT1G** ## **FREQUENCY RESPONSE SPECIFICATION** **==> picture [382 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> TRACKING SPECTRUM<br>OOS| SSee 8688 GENERATOR ANALYZER<br>50<br>TG OUTPUT RF INPUT NZF220DF<br>50<br>VG Vin Vout<br>TEST BOARD : fe - rt:<br>V V V<br>: :<br>[Lh cl<br>NZF220DF Test Conditions:<br>Source Impedance = 50 Q<br>Load Impedance = 50 Q<br>Input Power = 0 dB<br>Figure 1. Measurement Conditions<br>−6.30 ST<br>−10 Ne<br>POT PNT<br>−20 TUT PETE<br>a OUTPUT<br>3 dB = 220 MHz<br>a<br>−30<br>PTE EET A<br>PTT EN<br>−40 POT TY<br>−50<br>1.0 | LTT 10 TEU 100 TE 1000 3000<br>f, FREQUENCY (MHz)<br>GAIN (dB)<br>**----- End of picture text -----**<br> **Figure 2. Typical EMI Filter Response (50 Source and 50 Lead Termination)** Q Q **www.onsemi.com** **Share Feedback** Your Opinion Matters **3** **NZF220DFT1G, SNZF220DFT1G** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |10|Rebranded the Data Sheet to**onsemi**format.<br>SNZF220DFT1G OPN Marked as Discontinued.|09/18/2025| This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SC−88A (SC−70−5/SOT−353)** CASE 419A−02 ISSUE M **SCALE 2:1** DATE 11 APR 2023 **==> picture [143 x 72] intentionally omitted <==** ## **GENERIC MARKING** ## **DIAGRAM*** *This information is generic. Please refer to XXXM � device data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ � ”, may � or may not be present. Some products may not follow the Generic Marking. **==> picture [38 x 54] intentionally omitted <==** XXX = Specific Device Code - M = Date Code - = Pb−Free Package (Note: Microdot may be in either location) STYLE 4: STYLE 5: PIN 1. SOURCE 1 PIN 1. CATHODE 2. DRAIN 1/2 2. COMMON ANODE 3. SOURCE 1 3. CATHODE 2 4. GATE 1 4. CATHODE 3 5. GATE 2 5. CATHODE 4 STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 1 2. EMITTER 2. EMITTER 2. N/C 3. BASE 3. BASE 3. ANODE 2 4. COLLECTOR 4. COLLECTOR 4. CATHODE 2 5. COLLECTOR 5. CATHODE 5. CATHODE 1 > STYLE 9: Note: Please refer to datasheet for PIN 1. 2. ANODECATHODE 2. CATHODE style callout. If style type is not called 3. ANODE out in the datasheet refer to the device 4. 5. ANODEANODE 5. ANODE datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. STYLE 6: STYLE 7: STYLE 8: STYLE 9: Note: Please refer to datasheet for PIN 1. 2. EMITTER 2BASE 2 PIN 1. 2. BASEEMITTER PIN 1. 2. CATHODECOLLECTOR PIN 1. 2. ANODECATHODE style callout. If style type is not called 3. EMITTER 1 3. BASE 3. N/C 3. ANODE out in the datasheet refer to the device 4. 5. COLLECTORCOLLECTOR 2/BASE 1 4. 5. COLLECTORCOLLECTOR 4. 5. BASEEMITTER 4. 5. ANODEANODE datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42984B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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