SM6125NSKP

SM6125NSKP, Single MOSFET, N Channel, 60V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 60
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TA=25: 17
ID (A) TC=25: 100
Rg (Ω) typ.: 1
Ciss (pF) typ.: 5750
Coss (pF) typ.: 545
Crss (pF) typ.: 270
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 4
RON(mΩ max) 4.5V max.: 4.8
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
## **SM6125NSKP** 

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®<br>**----- End of picture text -----**<br>


N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 60V/100A[a] , 

RDS(ON)= 4mΩ (max.) @ VGS=10V 

- RDS(ON)= 4.8mΩ (max.) @ VGS=4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

## **Applications** 

- Secondary Side Synchronous Rectification 

- DC-DC Converter 

- Motor Control 

- Load Switching 

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[D] [D] |<br>D [D] |<br>[G] Pin 1<br>[S]<br>S [S]<br>DFN5x6-8<br>(5,6,7,8)<br>DD DD<br>(4) G |<br>S S S<br>( 1, 2, 3 )<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM6125NS Package Code<br>     KP : DFN5x6-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM6125NS  KP : SM6125 XXXXX - Lot Code<br>XXXXX<br>j E S| |<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

**®** sinopower MA 

## **SM6125NSKP** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|~~Pa~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~Pa~~<br>~~Pe~~|**Parameter**<br>||**Rating**<br>|**Unit**<br>|
|**Common Ratings**<br>~~Pa~~<br>~~Pe~~|||||
|VDSS<br>~~Peee~~|Drain-Source Voltage<br>~~ee~~||60<br>~~ee~~|V<br>~~ee~~<br>~~ae~~|
|VGSS<br>~~ee~~<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>~~ee~~||±20<br>~~ee~~<br>~~ee~~<br>~~ae~~||
|TJ<br>~~es~~<br>~~a~~|Maximum Junction Temperature<br>~~es~~||150<br>~~es~~<br>~~ae~~|°C<br>~~es~~<br>~~ae~~|
|TSTG<br>~~es~~<br>~~a~~<br>~~a~~|Storage Temperature Range<br>~~es~~<br>||-55 to 150<br>~~es~~<br>~~ae~~<br>||
|IS<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>|TC=25°C<br>|100<br>a<br>~~ae~~<br>|A<br>~~ae~~|
|ID<br>~~aa~~<br>~~a~~|Continuous Drain Current<br>~~a~~<br>|TC=25°C<br>~~a~~<br>~~ee eee~~<br>|100<br>a<br>~~a~~<br>~~eee~~<br>||
|||TC=100°C<br>~~a~~<br>~~ee eee~~<br>|100<br>a<br>~~a~~<br>~~eee~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~ee~~|TC=25°C<br>~~ee eee~~<br>~~ee~~|400<br>b<br>~~eee~~<br>~~ee~~||
|PD<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TC=25°C<br>~~a~~|250<br>~~a~~|W<br>~~a~~|
|||TC=100°C<br>~~a~~<br>~~a~~|100<br>~~a~~<br>~~a~~||
|RθJC<br>~~PG~~|Thermal Resistance-Junction to Case<br>~~PG~~|SteadyState<br>~~PG~~|0.5<br>~~PG~~|°C/W<br>~~PG~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~|17<br>~~ee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~a~~|14<br>~~ee~~<br>~~a~~||
|PD<br>~~a~~|Maximum Power Dissipation|TA=25°C<br>~~eee~~|2.2<br>~~eee~~|W<br>~~eee~~|
|||TA=70°C<br>~~eee~~<br>~~a~~|1.4<br>~~eee~~<br>~~a~~||
|RθJA<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~a~~|t≤10s<br>~~eee~~|20<br>~~eee~~|°C/W<br>~~eee~~|
|||Steady State<br>~~eee~~<br>~~rr~~|55<br>~~eee~~<br>~~rr~~||
|IAS<br>c<br>~~a~~|Avalanche Current, Singlepulse<br>~~ee~~|L=0.5mH<br>~~ee~~|30<br>~~ee~~|A<br>~~ee~~|
|EAS<br>c<br>~~a~~|Avalanche Energy, Singlepulse|L=0.5mH|225|mJ|



Note a：Current limited by bond wire. Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C) 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

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**®** sinopower WN 

## **SM6125NSKP** 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**||||||||
|BVDSS<br>~~a~~<br>~~a~~|Drain-Source Breakdown Voltage<br><br>|VGS=0V, IDS=250µA<br><br>~~eea~~<br>||60<br><br>~~a~~<br>|-<br><br>~~a~~<br>|-<br><br>~~a~~<br>|V<br><br>|
|IDSS<br>~~ee~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~eea~~<br>||-<br>~~ee~~<br>~~a~~<br>|-<br>~~ee~~<br>~~a~~<br>|1<br>~~ee~~<br>~~a~~<br>|µA<br>~~ee~~<br>|
||||TJ=85°C<br>~~ee~~<br>~~a~~<br>|-<br>~~ee~~<br>~~a~~<br>|-<br>~~ee~~<br>~~a~~<br>|30<br>~~ee~~<br>~~a~~<br>||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>~~eea~~<br>||1<br>~~a~~<br>|2<br>~~a~~<br>|3<br>~~a~~<br>|V<br>|
|IGSS<br>~~aapf~~|Gate Leakage Current<br>~~pf~~|VGS=±20V, VDS=0V<br>~~eea~~<br>~~a~~||-<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|±100<br>~~a~~<br>~~a~~|nA<br>~~a~~|
|RDS(ON)<br>d <br>~~pf~~|Drain-Source On-state Resistance<br>~~pf~~|VGS=10V, IDS=25A<br>~~a~~||-<br>~~a~~<br>~~ee~~|3.3<br>~~a~~<br>~~ee~~|4<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~|
|||VGS=4.5V, IDS=25A<br>~~a~~||-<br>~~a~~<br>~~ee~~|3.7<br>~~a~~<br>~~ee~~|4.8<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~|
|**Diode Characteristics**<br>~~pf a~~<br>~~ee ee~~<br>~~PR~~||||||||
|VSD<br>d<br>~~PRSS~~|Diode Forward Voltage<br>~~SS~~|ISD=20A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~PRSS~~<br>|Reverse Recovery Time<br>~~SS~~<br>|ISD=30A, dlSD/dt=100A/µs<br>~~ee~~<br>~~a—~~||-<br>~~ee~~<br>~~—~~|36<br>~~ee~~<br>~~—~~|-<br>~~ee~~<br>~~—~~|ns<br>~~ee~~<br>~~—~~|
|Qrr<br>~~SS~~<br>~~a~~|Reverse Recovery Charge<br>~~SS~~<br>~~a~~|||-<br>~~ee~~<br>~~a—~~<br>~~|~~|48<br>~~ee~~<br>~~—~~<br>~~|~~|-<br>~~ee~~<br>~~—~~<br>~~|~~|nC<br>~~ee~~<br>~~—~~<br>~~|~~|
|**Dynamic Characteristics**<br>e<br>~~SS~~<br>~~ee~~<br>~~—~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~a~~|VGS=0V,VDS=0V,f=1MHz<br>~~a~~<br>~~|~~||-<br>~~a~~<br>~~|~~|1.0<br>~~|~~|-<br>~~|~~|Ω|
|Ciss<br>~~ee~~<br>~~ee~~|Input Capacitance|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~—~~<br>~~ee~~<br>~~|~~||-<br>~~|~~<br>~~—|~~|5750<br>~~|~~<br>~~|~~|7480<br>~~|~~|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~—|~~<br>~~|~~|545<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~— |~~<br>~~|~~|270<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|td(ON)<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br> ~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~—~~<br>~~ee~~<br>~~fe~~<br>~~|~~||-<br>~~|~~<br>~~|~~|28<br>~~|~~<br>~~|~~<br>~~|~~|50<br>~~|~~<br>~~|~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~|~~<br>~~— ~~<br>~~fe~~|14<br>~~|~~<br>~~|~~<br> ~~|~~<br>~~fe~~|25<br>~~|~~<br>~~|~~<br>~~|~~<br>~~fe~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~|~~<br>~~fe~~<br>~~|~~|130<br>~~|~~<br>~~fe~~<br>~~|~~|235<br>~~|~~<br>~~fe~~<br>~~|~~||
|tf<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~fe~~<br>~~|~~|52<br>~~fe~~<br>~~|~~|94<br>~~fe~~<br>~~|~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~|~~<br>~~a~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge|VDS=30V, VGS=4.5V,<br>IDS=30A<br>~~|~~||-<br>~~|~~|50<br>~~|~~|-<br>~~|~~|nC|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge|VDS=30V, VGS=10V,<br>IDS=30A<br>~~|~~<br>~~|~~<br>~~|~~||-<br>~~|~~<br>~~|~~|110<br>~~|~~<br>~~|~~|155<br>~~|~~<br>~~|~~||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge|||-<br>~~|~~<br>~~|~~<br>~~|~~|22<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge|||-<br>~~|~~<br>~~|~~|19<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||



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SM6125NSKP K ®<br>Typical Operating Characteristics<br>Power Dissipation Drain Current<br>300 120<br>250 100<br>200 80<br>150 60<br>100 40<br>50 20<br>0 TC=25oC 0 TC=25oC,VG=10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>800 4<br>1 Duty = 0.5<br>0.2<br>100<br>0.1<br>0.1<br>0.05<br>1ms 0.02<br>0.01<br>0.01<br>10<br>10ms<br>DC<br>1E-3<br>1 LC ;<br>Single Pulse<br>1E-4<br>0.1 TC=25oC 1E-5 RθJC :0.5 o C/W<br>0.01 0.1 1 10 100 300 1E-6 ff 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Copyright  Sinopower Semiconductor, Inc. 4 www.sinopowersemi.com<br>Rev. A.2 - November, 2013<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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sinopower VA **®** 

**SM6125NSKP** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

**Drain-Source On Resistance** 

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140 5.0<br>V GS =3.5,4,5,6,7,8,9,10V<br>120<br>4.5<br>100<br>4.0 V GS =4.5V<br>80<br>V =10V<br>3.5 GS<br>60<br>3V<br>3.0<br>40<br>2.5<br>20<br>2.5V<br>0 2.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140<br>a ae<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>18 1.6<br>IDS=25A I DS  =250µA<br>1.4<br>15<br>1.2<br>12<br>1.0<br>9<br>0.8<br>6<br>0.6<br>3<br>0.4<br>0 0.2<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

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## **SM6125NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 25A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 3.3mΩ<br>0.0 zs<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>10000<br>Frequency=1MHz<br>9000<br>8000<br>7000<br>6000 Ciss<br>5000<br>4000<br>3000<br>2000<br>1000 Crss Coss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>V =30V<br>DS<br>9  I =30A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

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**®** sinopower WA 

**SM6125NSKP** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>oe<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM6125NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>=a<br>SYM MILLIMETERS DFN5x6-8 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX. 4.6<br>A 0.90 1.20 0.035 0.047<br>Se 0.77<br>B 0.3 0.51 0.012 0.020<br>pL C 0.19 0.25 0.007 0.010<br>D 4.80 5.30 0.189 0.209<br>D1 4.00 4.40 0.157 0.173<br>E 5.90 6.20 0.232 0.244 3.6<br>=————I<br>E1 5.50 5.80 0.217 0.228 6.1<br>e 1.27 BSC 0.050 BSC<br>F 0.05 0.30 0.002 0.012<br>F1 0.35 0.75 0.014 0.030<br>G 0.05 0.30 0.002 0.012<br>0.5 1.27<br>G1 0.35 0.75 0.014 0.030<br>H 3.34 3.9 0.131 0.154<br>K 0.762 - 0.03 -<br>UNIT: mm<br>Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.<br>              Mold flash or protrusions shall not exceed 10 mil.<br>E1 E<br>A<br>C<br>0.61<br>1.16<br>1.18<br>0.71<br>**----- End of picture text -----**<br>


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sinopower **®** WA 

**SM6125NSKP** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>| Wy <//<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|0.10<br>2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



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sinopower **®** YX 

**SM6125NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

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**®** 

## **SM6125NSKP** 

## **Classification Reflow Profiles** 

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||||
|---|---|---|
|Profile Feature|Sn-Pb Eutectic Assembly|Pb-Free Assembly|
|Preheat & Soak|100 °C|150 °C|
|Temperature min (Tsmin)|150 °C|200 °C|
|Temperature max (Tsmax)|
|60-120 seconds|60-120 seconds|
|Time (Tsmin to Tsmax) (ts)|
|Average ramp-up rate|3 °C/second max.|3°C/second max.|
|(Tsmax to TP)|
|Liquidous temperature (TL)|183 °C|217 °C|
|Time at liquidous (tL)|60-150 seconds|60-150 seconds|
|Peak package body Temperature|
|*|See Classification Temp in table 1|See Classification Temp in table 2|
|(Tp)|
|Time (tP)** within 5°C of the specified|
|20** seconds|30** seconds|
|classification temperature (Tc)|
|Average ramp-down rate (Tp to Tsmax)|6 °C/second max.|6 °C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.|
|** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|

**----- End of picture text -----**<br>


Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=—=S===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———=————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, 

Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013 

_www.sinopowersemi.com_ 

11
Updated at February 12, 2024
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