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SM3433NHQG
SM3433NHQG, Single MOSFET, N Channel, 40V, DFN3.3x3.3B-8_EP1
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Datasheet
sinopower UN **®**
## **SM34 33 NHQG**
## N-Channel Enhancement Mode MOSFET
## **Features**
## **Pin Description**
- 40V/50A,
- RDS(ON) = 2.5m Ω (max.) @ VGS =10V RDS(ON) = 4.1m Ω (max.) @ VGS =4.5V
- 100% UIS + R Tested g
- Avalanche Rated
- Reliable and Rugged
- Lower Qg and Qgd for high-speed switching
- Lower R to Minimize Conduction Losses DS(ON)
- Lead Free and Green Devices Available
- (RoHS Compliant)
## **Applications**
- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
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D [D] [D] [D]<br>S [S] [S] [G]<br>DFN3.3x3.3-8(Saw-EP)<br>(5,6,7,8)<br>D D D D<br>(4) G<br>S S S<br>( 1, 2, 3 )<br>**----- End of picture text -----**<br>
N-Channel MOSFET
## **Ordering and Marking I nform ation**
SM3433NH Package Code QG : DFN3.3x3.3-8(Saw-EP) Operating Junction Temperature Range Assembly Material C : -55 to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel Package Code Assembly Material G : Halogen and Lead Free Device SM SM3433NH QG : 3433N XXXXX - Lot Code XXXXX Pe
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
**SM34 33 NHQG**
## **®** sinopower MA
**Absolute Maxim um Ratings** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~a~~|||||
|VDSS<br>~~a~~<br>~~a~~|Drain-Source Voltage<br>~~a~~<br>~~ee~~<br>||40<br>~~a~~<br>~~ee~~<br>|V<br>~~a~~<br>~~ee~~<br>|
|VGSS<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>||±20<br>~~ee~~<br>||
|TJ<br>~~—————~~|Maximum Junction Temperature<br>~~—————~~||150<br>~~—————~~|°C<br>~~—————~~|
|TSTG<br>~~—————~~<br>~~a~~<br>~~ee~~|Storage Temperature Range<br>~~—————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~—————~~<br>~~ee~~<br>||
|IS<br>~~a ee~~<br>~~ee~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~<br>~~eee~~|50<br>a<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br><br>~~el~~|
|ID<br>~~ee~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~eee~~<br>~~a~~<br>|50<br>a<br>~~eee~~<br>~~ee~~<br>||
|||TC=100°C<br>~~ee~~<br>~~eee~~<br>~~a~~<br>|50<br>~~eee~~<br>~~ee~~<br>||
|IDM<br>~~ee~~<br>~~a~~|Pulsed Drain Current<br>~~ee ~~<br>|TC=25°C<br>~~ee~~<br> ~~eee~~<br>~~a~~<br><br>~~re~~|200<br>b<br>~~eee~~<br>~~ee~~<br><br>~~el~~||
|PD<br>~~ae~~<br>~~a~~|Maximum Power Dissipation<br>~~ae~~<br>~~ee~~|TC=25°C<br>~~ae~~<br>~~re~~|62.5<br>~~ae~~<br>~~el~~|W<br>~~ae~~<br>~~el~~|
|||TC=100°C<br>~~ae~~<br>~~re~~<br>~~a~~|25<br>~~ae~~<br>~~el~~<br>~~a~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~|Steady State<br>~~re~~|2<br>~~el~~|°C/W<br>~~el~~|
|ID<br>~~a~~<br>~~a~~<br>~~Pp~~|Continuous Drain Current<br>~~ee~~<br>~~a~~<br>~~Pp~~|TA=25°C<br>~~a~~<br>~~a~~<br>|24<br>~~a~~<br>~~ee~~|A<br>~~a~~<br>~~ee~~|
|||TA=70°C<br>~~a~~<br>~~a~~<br>|19<br>~~a~~<br>~~ee~~||
|PD<br>~~Pp~~|Maximum Power Dissipation<br>~~Pp~~|TA=25°C<br>~~a~~<br>~~a~~|1.78<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|||TA=70°C<br>~~a~~<br>~~a~~<br>~~es~~|1.14<br>~~ee~~<br>~~ee~~<br>~~eee~~||
|RθJA<br><br>~~ee~~|Thermal Resistance-Junction to Ambient<br><br>~~ee~~|t≤10s<br>~~a~~<br>~~ee~~<br>~~es~~|35<br>~~ee~~<br>~~ee~~<br>~~eee~~|°C/W<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|||Steady State<br>c<br>~~ee~~<br>~~es~~<br>~~a~~|70<br>~~ee~~<br>~~eee~~<br>~~a~~||
|IAS<br>d<br>~~a~~|Avalanche Current, Single pulse|L=0.1mH<br>~~es ~~|50<br> ~~eee~~|A<br>~~eee~~|
|EAS<br>d<br>~~a~~|Avalanche Energy, Single pulse|L=0.1mH|125|mJ|
Note a：Package is limited by 50A. Note b：Pulse width is limited by maximum junction temperature. Note c：Surface Mounted on 1in[2] pad area, t ≤ 999s. Note d：UIS tested and pulse width is limited by maximum junction temperature 150[o] C (initial temperature TJ = 25[o] C).
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
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**SM34 33 NHQG**
**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Cn~~||||||||
|BVDSS<br>~~Cn~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~Cn~~<br>~~es~~|VGS=0V, IDS=250µA<br>~~Cn~~<br>~~es~~<br>~~re~~||40<br>~~Cn~~<br>~~es~~<br>~~re~~|-<br>~~Cn~~<br>~~es~~|-<br>~~Cn~~<br>~~es~~|V<br>~~Cn~~<br>~~es~~|
|IDSS<br>~~a~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~es~~<br>~~ee~~|VDS=32V, VGS=0V<br>TJ=85°C<br>~~es~~<br>~~ee~~<br>~~re~~<br>~~a~~||-<br>~~es~~<br>~~ee~~<br>~~re~~|-<br>~~es~~<br>~~ee~~|1<br>~~es~~<br>~~ee~~|µA<br>~~es~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~re~~<br>~~a~~|-<br>~~ee~~<br>~~re~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|30<br>~~ee~~<br>~~a~~||
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~|VDS=VGS, IDS=250µA<br>~~re~~<br>~~es~~<br>~~pd~~||1.4<br>~~re~~<br>~~es~~<br>~~pd~~|1.7<br>~~es~~<br>~~pd~~|2.5<br>~~es~~<br>~~pd~~|V<br>~~es~~|
|IGSS<br>~~a~~|Gate Leakage Current<br>~~es~~|VGS=±20V, VDS=0V<br>~~pd~~||-<br>~~pd~~|-<br>~~pd~~|±100<br>~~pd~~|nA|
|RDS(ON)<br>e <br>~~a~~|Drain-Source On-state Resistance<br>~~es~~|VGS=10V, IDS=22A<br>TJ=125°C<br>~~pd~~<br>~~ee~~||-<br>~~pd~~|2<br>~~pd~~<br>~~eee~~|2.5<br>~~pd~~<br>~~eee~~|mΩ|
||||TJ=125°C<br>~~pd~~<br>~~ee~~|-<br>~~pd~~<br>~~ee~~<br>~~ee~~|3<br>~~pd~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~pd~~<br>~~ee~~<br>~~eee~~<br>~~ee~~||
|||VGS=4.5V, IDS=18A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|3<br>~~eee ~~<br>~~ee~~<br>~~ee~~|4.1<br> ~~eee~~<br>~~ee~~<br>~~ee~~||
|Gfs<br>~~ee~~|Forward Transconductance<br>~~ee~~|VDS=5V, IDS=22A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~|28<br> ~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|S<br>~~ee~~|
|**Diode Characteristics**<br>~~et~~||||||||
|VSD<br>e<br>~~et~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Diode Forward Voltage<br>~~et~~<br>~~ee~~<br>|ISD=22A, VGS=0V<br>~~et~~<br>~~ee~~<br>~~ff~~||-<br>~~et~~<br>~~ff~~|0.8<br>~~et~~<br>~~ff~~|1.1<br>~~et~~<br>~~ff~~|V<br>~~et~~|
|trr<br>~~a ee~~<br>~~ee ee~~<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>~~ee~~|IF=10A, dlSD/dt=100A/µs<br>~~ee~~<br>~~ff~~<br>~~—~~<br>~~—~~<br>~~|~~||-<br>~~ff~~<br>~~—|~~|35.7<br>~~ff~~<br>~~||~~|-<br>~~ff~~|ns<br>~~|~~|
|ta<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|Charge Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~ff~~<br>~~—|~~<br>~~—|~~|19.3<br>~~ff~~<br>~~||~~<br>~~||~~|-<br>~~ff~~||
|tb<br>~~ee~~<br>~~ee ee~~<br>~~ee~~<br>~~ee~~<br>~~Pe~~|Discharge Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~ff~~<br>~~—|~~<br>~~—|~~|16.4<br>~~ff~~<br>~~||~~<br>~~||~~<br>~~|~~|-<br>~~ff~~<br>~~||~~||
|Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~Pe~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~<br>~~|~~|26.4<br>~~| |~~<br>~~||~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~||~~|nC<br>~~|~~<br>~~|~~|
|**Dynamic Characteristics**<br>f<br>~~ee~~<br>~~— | |~~<br>~~ee~~<br>~~|~~<br>~~||~~<br>~~Pe~~||||||||
|RG<br>~~Pea~~<br>|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V, F=1MHz<br>~~ee~~<br>~~—~~||-<br>~~—~~|1<br>~~|~~<br>|-<br>~~| |~~<br>|Ω<br>~~|~~|
|Ciss<br>~~a ~~<br>~~a~~|Input Capacitance<br> ~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=20V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~—ff~~<br>~~ee~~<br>~~—ff~~<br>~~—~~<br>~~—~~||-<br>~~—ff~~<br>~~—~~|2620<br>~~ff~~<br>|-<br>~~ff~~<br>|pF|
|Coss<br> <br>~~a~~<br>~~es~~<br>~~a~~|Output Capacitance<br> ~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~—~~<br>~~—ff~~<br>~~—{|~~|790<br><br>~~ff~~<br>~~{|~~<br>||-<br><br>~~ff~~||
|Crss<br>~~a ~~<br>~~es~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br> ~~ee~~<br>~~ee~~|||-<br>~~—ff~~<br>~~—{|~~<br>~~—|~~|70<br>~~ff~~<br>~~{|~~<br>|<br>~~|~~|-<br>~~ff~~||
|td(ON)<br>~~es~~<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime<br>~~ee~~|VDD=20V, RL=20Ω,<br>IDS=1A, VGEN=10V,<br>RG=1Ω<br>~~ff~~<br>~~—~~<br>~~—~~<br>~~—~~<br>~~—~~<br>~~ee~~<br>~~|~~||-<br>~~ff~~<br>~~— {|~~<br>~~—|~~<br>~~—|~~|15.8<br>~~ff~~<br>~~{|~~<br>|<br>~~|~~<br>~~|~~|29<br>~~ff~~|ns|
|tr<br>~~a~~<br>~~a~~<br>~~re~~|Turn-on Rise Time|||-<br>~~— |~~<br>~~—|~~<br>~~—|~~|9.3<br>~~|~~<br>~~|~~<br>~~|~~|18||
|td(OFF)<br>~~a~~<br>~~re~~|Turn-off DelayTime<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~<br>~~|~~|36.6<br>~~|~~<br>~~|~~<br>~~fe~~|67<br>~~fe~~||
|tf<br>~~re~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~—|~~<br>~~|~~|36.5<br>~~|~~<br>~~fe~~|67<br>~~fe~~||
|**Gate Charge Characteristics**<br>f<br>~~— |~~<br>~~|~~<br>~~re~~<br>~~ee~~<br>~~|~~<br>~~fe~~<br>~~Cn~~||||||||
|Qg<br>~~a~~|Total Gate Charge|VDS=20V, VGS=4.5V,<br>IDS=22A<br>~~_~~||-<br>~~_{|~~|19.3<br>~~{|~~<br>~~|~~|27|nC|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge|VDS=20V, VGS=10V,<br>IDS=22A<br>~~_~~<br>~~|~~<br>~~—~~<br>~~—~~||-<br>~~_{|~~|41<br>~~{|~~<br>~~|~~<br>~~|~~|57<br>~~|~~||
|Qgth<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|Threshold Gate Charge|||-<br>~~_ {|~~<br>~~|~~<br>~~—|~~|4.8<br>~~{|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|6.7<br>~~|~~<br>~~|~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge|||-<br>~~—|~~<br>~~—~~<br>~~|~~|9.2<br>~~|~~<br>~~|~~<br>~~|~~|12.8<br>~~|~~||
|Qgd<br>~~a~~|Gate-Drain Charge|||-<br>~~— |~~<br>~~—~~<br>~~|~~|5.2<br>~~|~~<br>~~|~~|7.3||
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**SM34 33 NHQG**
## **Typical Operating Characteristics**
## **Drain Current**
**Power Dissipation**
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70<br>60<br>50<br>40<br>30<br>20<br>10<br>TC=25 =25 o C<br>C=25<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>
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70 60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>TC=25 o C TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>500 3<br>1 Duty = 0.5<br>100 µ s<br>100 0.2<br>0.1<br>0.1<br>: =F 0.05<br>0.02<br>1ms<br>0.01<br>10 0.01<br>1E-3<br>10ms<br>1<br>DC<br>1E-4 Single Pulse<br>0.1 TC=25oC 1E-5 R θ JC :2 o C/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>stl<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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**SM34 33 NHQG**
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## **Typical Operating Characteristics ( Cont.)**
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Safe Operation Area Thermal Transient Impedance<br>300 2<br>1 Duty = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>10 300 µ s 0.1<br>0.02<br>1ms<br>0.01<br>1 0.01<br>100ms 10ms<br>Single Pulse<br>O Mounted on 1in 2 pad<br>0.1 TA=25 C DC 1s 1E-3 fi R θ JA :70oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100 500<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Output Characteristics Drain-Source On Resistance<br>180 6<br>150 V GS =4,4.5,5,6,7,8,9,10V 5<br>120 4<br>V =4.5V<br>3.5V GS<br>90 3<br>V =10V<br>GS<br>60 2<br>3V<br>30 1<br>2.5V<br>0 elie 0<br>0 1 2 3 4 5 0 30 60 90 120 150 180<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
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**SM34 33 NHQG**
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## **Typical Operating Characteristics ( Cont.)**
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**Gate Threshold Voltage**
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12 1.6<br>IDS=22A I DS =250 µ A<br>1.4<br>10<br>1.2<br>8<br>1.0<br>6<br>0.8<br>4<br>0.6<br>2<br>0.4<br>0 0.2<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>[_]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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Drain-Source On Resistance Source-Drain Diode Forward<br>2.0<br>V = 10V<br>GS 100<br>1.8 IDS = 22A<br>1.6<br>T =150oC<br>1.4 10 j<br>1.2 T =25 o C<br>j<br>1.0<br>1<br>0.8<br>0.6<br>0.4 a RON@Tj=25 o C: 2m Ω 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Copyright Sinopow er Sem iconductor, Inc. 6 ww w.sinopowersem i.com<br>Rev. A.2 - May, 2015<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>**----- End of picture text -----**<br>
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SM34 33 NHQG ®<br>Typical Operating Characteristics ( Cont.)<br>Capacitance Gate Charge<br>3500 10<br>Frequency=1MHz V = 20V<br>9 DS<br> I = 22A<br>3000 DS<br>8<br>Ciss<br>2500 7<br>6<br>2000<br>5<br>1500<br>4<br>3<br>1000 Coss<br>2<br>500<br>Crss 1<br>0 0 :<br>0 8 16 24 32 40 0 7 14 21 28 35 42<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br>Transfer Characteristics<br>120<br>100<br>80<br>60<br>40 T j =125 o C<br>T =25 o C<br>j<br>20<br>0 ,<br>0 1 2 3 4 5 6<br>VGS - Gate-Source Voltage (V)<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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**SM34 33 NHQG**
## **Avalanche Test Circuit and W aveform s**
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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>
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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>at<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>
## **Sw it ching Tim e Test Circuit and W aveform s**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>dj<br>tp<br>**----- End of picture text -----**<br>
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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
**®** sinopower MA
**SM34 33 NHQG**
## **Disclaim er**
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
**®** sinopower VN
**SM34 33 NHQG**
## **Classificat ion Profile**
Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
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**SM34 33 NHQG**
**®**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=SS==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~——=———~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.2 - May, 2015
Updated at February 12, 2024
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