SM2A12NSKP

SM2A12NSKP, Single MOSFET, N Channel, 200V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 200
Package: View
VGS (±V): 25
VTH(V) typ.: 3
ID (A) TA=25: 5.3
ID (A) TC=25: 23
Rg (Ω) typ.: 1
Ciss (pF) typ.: 2350
Coss (pF) typ.: 155
Crss (pF) typ.: 45
Tape & Reel: View
RON(mΩ max) 10V max.: 70
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Datasheet
**SM2A12NSKP ®** N-Channel Enhancement Mode MOSFET 

## **Features** 

**Pin Description** 

- 200V/23A, 

- RDS(ON)= 70mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

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[D]<br>[D]<br>D [D]<br>[G]<br>[S]<br>S [S]<br>DFN5x6-8<br>**----- End of picture text -----**<br>


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Pin 1<br>**----- End of picture text -----**<br>


## **Applications** 

- Power Management in TV Converter. 

- DC-DC Converter. 

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( 5,6,7,8 )<br>D D DD<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM2A12NS Package Code<br>     KP : DFN5x6-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM2A12NS  KP : SM2A12 XXXXX - Lot Code<br>XXXXX<br>|<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - February, 2014 

## **SM2A12NSKP** 

## **®** sinopower VN 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~Ce~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings**<br>~~Ce~~|||||
|VDSS<br>~~Ce————~~|Drain-Source Voltage<br>~~————~~||200<br>~~————~~|V<br>~~————~~<br>~~SEE~~|
|VGSS<br>~~————~~<br>~~aSEE~~|Gate-Source Voltage<br>~~————~~<br>~~SEE~~||±25<br>~~————~~<br>~~SEE~~||
|TJ<br>~~SEE~~|Maximum Junction Temperature<br>~~SEE~~||150<br>~~SEE~~|°C<br>~~SEE~~|
|TSTG<br>~~SEE~~<br>~~a~~|Storage Temperature Range<br>~~SEE~~||-55 to 150<br>~~SEE~~||
|IS<br>~~SEE~~<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~SEE~~|TC=25°C<br>~~SEE~~|11<br>~~SEE~~|A<br>~~SEE~~|
|ID<br>~~2~~|Continuous Drain Current|TC=25°C|23|A|
|||TC=100°C<br>~~a~~|14<br>~~a~~||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>|TC=25°C|48||
|PD<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|TC=25°C<br>~~ee~~|96<br>~~ee~~|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~a~~|38<br>~~ee~~<br>~~a~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>||1.3<br>|°C/W<br>|
|ID<br>~~el~~|Continuous Drain Current<br>~~el~~|TA=25°C<br>~~el~~|5.3<br>~~el~~|A<br>~~el~~<br>~~a~~|
|||TA=70°C<br>~~el~~<br>~~a~~|4.3<br>~~el~~<br>~~a~~||
|PD<br>~~[~~<br>~~Pop~~|Maximum Power Dissipation<br>~~[~~<br>~~Pop~~|TA=25°C<br>~~[~~|5<br>~~[~~|W<br>~~[~~<br>~~—~~|
|||TA=70°C<br>~~[~~<br>~~ee~~|3.2<br>~~[~~<br>~~ee~~<br>~~—~~||
|RθJA<br>c<br>~~Pop~~|Thermal Resistance-Junction to Ambient<br>~~Pop~~|t≤10s<br>~~ee~~|25<br>~~ee~~<br>~~—~~|°C/W<br>~~—~~|
|||Steady State<br>~~ee~~<br>~~a~~|60<br>~~ee~~<br>~~—~~|°C/W<br>~~—~~|
|IAS<br>b<br>~~Pop~~<br>~~a~~|Avalanche Current, Single pulse<br>~~Pop~~|L=0.5mH<br>~~ee~~|6.5<br>~~ee~~<br>~~—~~|A<br>~~—~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|10|mJ|



Note a：Pulse width limited by max. junction temperature. 

Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - February, 2014 

## **SM2A12NSKP** 

## **®** sinopower VN 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~es~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~es~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~esCe~~<br>~~ee~~||||||||
|BVDSS<br>~~Ce~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~Ce~~<br>~~se~~|VGS=0V, IDS=250µA<br>~~Ce~~<br>~~se~~<br>~~ee~~||200<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|-<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|-<br>~~Ce~~<br>~~se~~<br>~~ee~~<br>|V<br>~~Ce~~<br>~~se~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=160V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~eere~~||-<br>~~ee~~<br>~~a~~<br>|-<br>~~ee~~<br>~~a~~<br>|1<br>~~ee~~<br>~~a~~<br>|µA<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~eere~~|-<br>~~a~~<br>~~re~~|-<br>~~a~~<br>~~re~~|30<br>~~a~~<br>~~re~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~||2<br><br>~~a~~|3<br><br>~~a~~|4<br><br>~~a~~|V<br>~~a~~|
|IGSS|Gate Leakage Current|VGS=±25V, VDS=0V<br>~~ee~~||-<br>|-<br>|±100<br>|nA|
|RDS(ON)<br>d <br>~~a~~<br>~~Cn~~|Drain-Source On-state Resistance<br>~~a~~<br>~~Cn~~|VGS=10V, IDS=11A<br>~~a~~||-<br>~~a~~|58<br>~~a~~|70<br>~~a~~|mΩ<br>~~a~~|
|**Diode Characteristics**<br>~~a~~<br>~~Cn~~<br>~~a~~<br>~~es~~||||||||
|VSD<br>d<br>~~Cn~~<br>~~a~~|Diode Forward Voltage<br>~~Cn~~<br>~~es~~|ISD=5A, VGS=0V||-|0.8|1.3|V|
|trr<br>~~a~~<br>~~pf~~|Reverse Recovery Time<br>~~es~~<br>~~pf~~|ISD=10A, dlSD/dt=100A/µs<br>~~pf~~||-<br>~~pf~~|75<br>~~pf~~<br>~~|~~|-<br>~~pf~~<br>~~|ff~~|ns<br>~~pf~~<br>~~ff~~|
|Qrr<br>~~pf~~<br>~~a~~|Reverse Recovery Charge<br>~~pf~~|||-<br>~~pf~~<br>~~|~~|255<br>~~pf~~<br>~~|~~<br>~~|~~|-<br>~~pf~~<br>~~|~~<br>~~|ff~~|nC<br>~~pf~~<br>~~|~~<br>~~ff~~|
|**Dynamic Characteristics**<br>e<br>~~| ff~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz||-<br>~~pt~~|1.0<br>~~pt~~|-<br>~~pt~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz||-<br>~~pt~~|2350<br>~~pt~~|3100<br>~~pt~~|pF|
|Coss<br>~~a~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~pt~~<br>~~ee~~|155<br>~~pt~~<br>~~ee~~|-<br>~~pt~~<br>~~ee~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~|45<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~|-<br>~~pt~~<br>~~ee~~<br>~~of~~<br>~~ef~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~ef~~<br>~~st~~|23<br>~~ee~~<br>~~ef~~<br>~~st~~|42<br>~~ee~~<br>~~ef~~<br>~~st~~|ns|
|tr<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~ef~~<br>~~st~~<br>~~|~~|6<br>~~ef~~<br>~~st~~<br>~~|~~|11<br>~~ef~~<br>~~st~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~st~~<br>~~|~~<br>~~|~~|51<br>~~st~~<br>~~|~~<br>|92<br>~~st~~<br>~~|~~<br>||
|tf<br>~~ee~~<br>~~es~~<br>~~Ce~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~|~~<br>~~|ft~~|30<br>~~|~~<br>~~ft~~|54<br>~~|~~<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~es ee~~<br>~~|ft~~<br>~~Cea~~<br>~~ee~~<br>~~pf~~||||||||
|Qg<br>~~Cea~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=100V, VGS=10V,<br>IDS=11A<br><br>~~|~~||-<br>~~ft~~<br>~~pf~~<br>~~pt~~|40<br>~~ft~~<br>~~pf~~<br>~~pt~~|56<br>~~ft~~<br>~~pf~~<br>~~pt~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~pf~~<br>~~pt~~<br>~~|~~<br>~~|~~|14<br>~~pf~~<br>~~pt~~<br>~~|~~|-<br>~~pf~~<br>~~pt~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~pt~~<br>~~|~~<br>~~|~~|10<br>~~pt~~<br>~~|~~|-<br>~~pt~~<br>~~|~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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## **SM2A12NSKP** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

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105<br>90<br>75<br>60<br>45<br>30<br>15<br>TC=25 o C<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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25<br>20<br>15<br>10<br>5<br>TC=25oC,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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100 3<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>10<br>0.02<br>1ms 0.01<br>0.01<br>1E-3<br>1<br>10ms<br>DC<br>1E-4 Single Pulse<br>0.1 TC=25oC 1E-5 RθJC :1.3 o C/W<br>0.01 0.1 1 10 100 1000 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM2A12NSKP** 

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## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

**Drain-Source On Resistance** 

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50 120<br>VGS=6,7,8,9,10V<br>100<br>40<br>80<br>5.5V<br>30 V =10V<br>GS<br>60<br>20<br>40<br>5V<br>10<br>20<br>4.5V<br>0 0<br>0 2 4 6 8 10 0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance [_] Gate Threshold Voltage<br>160 2.0<br>IDS=11A IDS=250µA<br>140<br>1.5<br>120<br>100 1.0<br>80<br>0.5<br>60<br>40 0.0 i<br>3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM2A12NSKP** 

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## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

**Source-Drain Diode Forward** 

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3.0 50<br>V  = 10V<br>GS<br> I  = 11A<br>2.5 DS<br>10<br>2.0 T =150oC<br>j<br>T =25 o C<br>1.5 j<br>1<br>1.0<br>0.5<br>RON@Tj=25oC: 58mΩ<br>0.0 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>3200 10<br>Frequency=1MHz V DS =100V<br>2800 9  IDS=11A<br>8<br>2400 Ciss<br>RE<br>7<br>2000<br>6<br>1600 5<br>4<br>1200<br>3<br>800<br>2<br>400<br>Coss 1<br>Crss<br>0 0<br>0 8 16 24 32 40 0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM2A12NSKP** 

## **®** sinopower WA. 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>o&<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM2A12NSKP** 

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## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>res<br>SYM MILLIMETERS DFN5x6-8 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX. 4.6<br>A 0.90 1.20 0.035 0.047<br>SS = 0.77<br>B 0.3 0.51 0.012 0.020<br>eee C 0.19 0.25 0.007 0.010<br>D 4.80 5.30 0.189 0.209<br>D1 4.00 4.40 0.157 0.173<br>E 5.90 6.20 0.232 0.244 3.6<br>=S==1<br>E1 5.50 5.80 0.217 0.228 6.1<br>e 1.27 BSC 0.050 BSC<br>F 0.05 0.30 0.002 0.012<br>F1 0.35 0.75 0.014 0.030<br>G 0.05 0.30 0.002 0.012<br>0.5 1.27<br>G1 0.35 0.75 0.014 0.030<br>H 3.34 3.9 0.131 0.154<br>K 0.762 - 0.03 -<br>UNIT: mm<br>Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.<br>              Mold flash or protrusions shall not exceed 10 mil.<br>E1 E<br>A<br>C<br>0.61<br>1.16<br>1.18<br>0.71<br>**----- End of picture text -----**<br>


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## **SM2A12NSKP** 

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## **Carrier Tape & Reel Dimensions** 

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to pad OD0 é P0 & P2 fe P1 ele A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



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sinopower **®** UX 

## **SM2A12NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - February, 2014 

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**®** 

## **SM2A12NSKP** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C Table 2. Pb-free Process – Classification Temperatures (Tc) ~~FE~~ **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

_www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - February, 2014 

11
Updated at February 12, 2024
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