Illustrative purposes only
SIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.083 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 278W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 278W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.083ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 33A
- Drain Source On State Resistance: 0.083ohm
- Gate Source Threshold Voltage Max: 2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 11.6 € |
| Current stock | N/A |
| Lead time | 30 days |