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SI4599DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.0295 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0295ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 3W
- Power Dissipation P Channel: 3.1W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 6.8A
- Continuous Drain Current Id P Channel: 6.8A
- Drain Source On State Resistance N Channel: 0.0295ohm
- Drain Source On State Resistance P Channel: 0.0295ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.398 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 23, 2026