SCS112AG
Silicon Carbide Schottky Diode, Barrier, Single, 600 V, 12 A, 22 nC, TO-220AC
- Manufacturer: ROHM
- Product type: Silicon Carbide Schottky Diodes
- Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:12A; Total Capacitive Charge Qc:22nC; Diode Case Style:TO-220AC;
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220AC
- Diode Configuration: Single
- Average Forward Current: 12A
- Total Capacitive Charge: 22nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 200 |
| Price | 6.49 € |
| Current stock | 10+ |
| Lead time | 30 days |
## SiC Schottky Barrier Diode ## **SCS112AG** ## **Applications** ## **Dimensions** (Unit : mm) ## **Structure** Switching power supply ## **Features** 1)Shorter recovery time - 2)Reduced temperature dependence 3)High-speed switching possible ## **Construction** Silicon carbide epitaxial planer type ROHM : ＴO-220AC ## **Absolute maximum ratings** (Ta=25°C) |**Absolute maximum ratingsgss **(Ta=25°C)Ta=25°C))|||| |---|---|---|---| |Parameter|Symbol<br>~~a ~~|Limits<br> ~~ee~~|Unit| |Reverse voltage(repetitive)|VRM<br>~~a~~<br>~~ee~~|600<br>~~ee~~|V<br>~~ee~~| |Reverse voltage(DC)|VR<br>~~ee~~<br>~~ee~~|600<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~| |Continuous forward current(*1)|IF<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Forward current surgepeak(60Hz・1cyc) (*2)|IFSM<br>~~ee~~<br>~~ee~~<br>~~ee~~|41<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Junction temperature|Tj<br>~~ee~~<br>~~ee~~<br>~~ee~~|150<br>~~ee~~<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~ee~~| |Storage temperature|Tstg<br>~~ee~~<br>~~ee~~|55 to150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| (*1)Tc=115°C max (*2)PW=8.3ms sinusoidal ## **Electrical characteristics** (Ta=25°C) |**Electrical characteristics** (Ta=25°C)Ta=25°C))||||||| |---|---|---|---|---|---|---| |Parameter|Symbol<br>~~es~~<br>~~ee~~|Min.<br>~~ee~~<br>~~ee~~|Typ.<br>~~ee~~<br>~~ee~~|Max.<br>~~ee~~<br>~~ee~~|Unit<br>~~ee~~<br>~~ee~~|Conditions| |DC blockingvoltage|VDC<br>~~es~~<br>~~ee~~<br>~~ee~~|600<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|IR=0.24mA<br>~~ee~~| |Forward voltage|VF<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.5<br>~~ee ~~<br>~~ee~~<br>~~ee~~|1.7<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|IF=12A<br>~~ee~~<br>~~ee~~| |Reverse current|IR<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|2.4<br>~~ee~~<br>~~ee~~|240<br>~~ee~~<br>~~ee~~|μA<br>~~ee~~<br>~~ee~~|VR=600V<br>~~ee~~<br>~~ee~~| |Total capacitance|C<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>|516<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~|pF<br>~~ee~~<br>~~eee~~<br>~~ee~~|VR=1V,f=1MHz<br>~~ee~~| |||-<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>|56<br>~~eee~~<br>~~ee~~<br>~~ee~~|-<br>~~eee~~<br>~~ee~~<br>~~ee~~|pF<br>~~eee~~<br>~~ee~~<br>~~ee~~|VR=600V,f=1MHz<br>~~ee~~| |Total capacitive charge|Qc<br>~~ee~~<br>~~ee~~<br>~~es~~|-<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|22<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|nC<br>~~ee~~<br>~~ee~~<br>~~ee~~|VR=400V,di/dt=350A/μs<br>~~ee~~<br>~~ee~~| |Switchingtime|tc<br>~~ee ~~<br>~~ee~~<br>~~es~~|-<br>~~ee ~~<br> ~~ee~~<br>~~**ee**~~|16<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|ns<br> ~~ee~~<br>~~ee~~<br>~~ee~~|VR=400V,di/dt=350A/μs<br>~~ee~~<br>~~ee~~| |Thermal resistance|Rth(j-c)<br> <br>~~ee ~~<br>~~es~~|-<br> ~~ee~~<br> ~~**ee**~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.6<br>~~ee ~~<br>~~ee~~|°C/W<br> ~~ee~~<br>~~ee~~|junction to case<br>~~ee~~<br>~~ee~~| www.rohm.com **2011.04 - Rev.A** 1/3 ©201 1 ROHM Co., Ltd. All rights reserved. Data Sheet **SCS112AG** **==> picture [73 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.2 VF-IF Characteristics<br>**----- End of picture text -----**<br> **==> picture [420 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.1 VF-IF Characteristics Fig.2 VF-IF Characteristics<br>100 18<br>pulsed pulsed<br>Ta= 125°C<br>10<br>Ta= 75°C<br>Ta= 125°C 12<br>1 Ta= 75°C<br>Ta= 25°C<br>0.1 Ta=-25°C<br>6<br>Ta= 25°C<br>0.01<br>Ta=-25°C<br>0.001 0<br>0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5<br>FORWARD VOLTAGE : VF (V) FORWARD VOLTAGE : VF (V)<br>Fig.3 VR-IR Characteristics Fig.4 VR-Ct Characteristics<br>100000 1000<br>10000<br>Ta= 125°C<br>100<br>1000<br>Ta= 75°C<br>Ta= 25°C<br>100<br>10<br>10 Ta=-25°C<br>Ta=25°C<br>f=1MHz<br>1 1<br>0 200 400 600 0.01 0.1 1 10 100 1000<br>REVERSE VOLTAGE: VR (V) REVERSE VOLTAGE : VR [V]<br>Fig.5 Thermal Resistance vs Pulse Width Fig.6 Power Dissipation<br>10 90<br>80<br>70<br>1 60<br>50<br>40<br>0.1 30<br>20<br>Ta=25°C<br>10<br>Single Pulse<br>0.01 0<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0 30 60 90 120 150<br>PULSE WIDTH : Pw (s) CASE TEMPERATURE : Tc ( ℃ )<br>FORWARD CURRENT: IF(A)<br>FORWARD CURRENT: IF(A)<br>REVERSE CURRENT (nA)<br>CAPACITANCE BETWEEN TERMINALS : Ct [pF]<br>/W)<br>℃ THERMAL RESISTANCE ( POWER DISSIPATION (W)<br>**----- End of picture text -----**<br> www.rohm.com **2011.04 - Rev.A** © 2011 ROHM Co., Ltd. All rights reserved. 2/3 Data Sheet **SCS112AG** Fig.8 Io-Pf Characteristics **==> picture [418 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.7 Derating Curve Ip-Tc<br>70 50<br>Duty=0.1 45 D.C.<br>60 Duty=0.8<br>40 Duty=0.5<br>50 35 Duty=0.2<br>Duty=0.2 Duty=0.1<br>30<br>40<br>25<br>30 Duty=0.5<br>20<br>20 15<br>Duty=0.8 10<br>10 D.C.<br>5<br>0 0<br>0 30 60 90 120 150 0 5 10 15 20<br>CASE TEMPARATURE : Tc ( ℃ ) AVERAGE RECTIFIED FORWARD CURRENT : Io (A)<br>(A)<br>(W)<br>CURRENT<br>DISSIPATION<br>FORWARD<br>POWER<br>PEAK<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.04 - Rev.A** 3/3 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 22, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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