SBAV99WT1G

## BAV99W, BAV99RW 

## Dual Series Switching Diodes 

The BAV99WT1G is a smaller package, equivalent to the BAV99LT1G. 

## **Features** 

**www.onsemi.com** 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

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SC−70<br>CASE 419<br>ANODE CATHODE<br>1 men 2<br>3<br>CATHODE/ANODE<br>BAV99WT1<br>SC−70, CASE 419, STYLE 9<br>CATHODE ANODE<br>1 eT 2<br>3<br>CATHODE/ANODE<br>BAV99RWT1<br>SC−70, CASE 419, STYLE 10<br>**----- End of picture text -----**<br>


## **Suggested Applications** 

- ESD Protection 

- Polarity Reversal Protection 

- Data Line Protection 

- Inductive Load Protection 

- Steering Logic 

## **MAXIMUM RATINGS** (Each Diode) 

|**MAXIMUM RATINGS**(Each Diode)|**MAXIMUM RATINGS**(Each Diode)|1<br>2<br>3<br>~~eT~~|
|---|---|---|
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>~~ee~~||3<br>CATHODE/ANODE|
|Reverse Voltage<br>VR<br>100<br>Vdc<br>Forward Current<br>IF<br>215<br>mAdc<br>~~a~~||**BAV99RWT1**<br>**SC−70, CASE 419, STYLE 10**|
|Peak Forward Surge Current<br>IFM(surge)<br>500<br>mAdc<br>Repetitive Peak Reverse Voltage<br>VRRM<br>100<br>V<br>~~a~~||**MARKING DIAGRAM**|
|Average Rectified Forward Current<br>(Note 1)<br>(averaged over any 20 ms period)<br>IF(AV)<br>715|mA|X7 M<br>A7<br>= BAV99W<br>F7<br>= BAV99RW<br>M<br>= Date Code|
|Repetitive Peak Forward Current<br>IFRM<br>450|mA|= Pb−Free Package<br>1|
|Non−Repetitive Peak Forward Current<br>t = 1.0 s<br>t = 1.0 ms<br>t = 1.0 s<br>IFSM<br>2.0<br>1.0<br>0.5<br>A<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>1. FR−5 = 1.0<br>0.75<br>0.062 in.<br>po||**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>BAV99RWT1G<br>SC−70<br>(Pb−Free)<br>3,000 / Tape & Reel<br>BAV99WT1G<br>SC−70<br>(Pb−Free)<br>3,000 / Tape & Reel<br>SBAV99WT1G<br>SC−70<br>(Pb−Free)<br>3,000 / Tape & Reel<br>SBAV99RWT1G<br>SC−70<br>(Pb−Free)<br>3,000 / Tape & Reel<br>NSVBAV99WT3G<br>SC−70<br>(Pb−Free)<br>10,000 / Tape & Reel<br>~~==~~|
|||†For information on tape and reel specifications,|
|||including part orientation and tape sizes, please|
|||refer to our Tape and Reel Packaging Specifications|
|||Brochure, BRD8011/D.|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **April, 2015 − Rev. 9** 

**BAV99WT1/D** 

**BAV99W, BAV99RW** 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Total Device Dissipation FR−5 Board, (Note 1) TA= 25°C<br>Derate above 25°C|PD|200<br>1.6|mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient|R�JA|625|°C/W|
|Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C<br>Derate above 25°C|PD|300<br>2.4|mW<br>mW/°C|
|Thermal Resistance Junction−to−Ambient|R�JA|417|°C/W|
|Junction and Storage Temperature|TJ, Tstg|−65 to +150|°C|



## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (Each Diode) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted) (Each|Diode)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|100|−|Vdc|
|Reverse Voltage Leakage Current<br>(VR= 100 Vdc)<br>(VR= 25 Vdc, TJ= 150°C)<br>(VR= 70 Vdc, TJ= 150°C)|IR|−<br>−<br>−|1.0<br>30<br>50|�Adc|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|1.5|pF|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, iR(REC)= 1.0 mAdc) (Figure 1) RL= 100�|trr|−|6.0|ns|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns)|VFR|−|1.75|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR−5 = 1.0 � 0.75 � 0.062 in. 2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 

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820 �<br>+10 V 2 k<br>100 �H IF 0.1 �F tr t p t IF<br>0.1 �F 10% t rr t<br>DUT<br>50 � OUTPUT 50 � INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: (a) A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: (c) tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BAV99W, BAV99RW** 

## **CURVES APPLICABLE TO EACH DIODE** 

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1000 10<br>TA = 150°C<br>100 1.0 TA = 125°C<br>TA = 85°C<br>10 0.1<br>TA = 150°C TA = 25°C TA = -�55°C TA = 55°C<br>1.0 0.01<br>TA = 25°C<br>0.1 0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>μ<br>IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (��A)<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**www.onsemi.com** 

**3** 

**BAV99W, BAV99RW** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

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D<br>NOTES:<br>e1 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3<br>DIM MIN NOM MAX MIN NOM MAX<br>HE E A 0.80 0.90 1.00 0.032 0.035 0.040<br>1 2 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>ia an ) ———_——— c 0.10 0.18 0.25 0.004 0.007 0.010<br>b D 1.80 2.10 2.20 0.071 0.083 0.087<br>E 1.15 1.24 1.35 0.045 0.049 0.053<br>e l e ls Se e 1.20 1.30 1.40 0.047 0.051 0.055<br>e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>t oy ——— H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 9: STYLE 10:<br>PIN 1. ANODE PIN 1. CATHODE<br> 2. CATHODE  2. ANODE<br>Eo, 0.05 (0.002) A1 Jo L h  3. CATHODE-ANODE  3. ANODE-CATHODE<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>aia<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>a = inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**BAV99WT1/D** 

**4**