RB520S30,115
Small Signal Schottky Diode, Single, 30 V, 200 mA, 600 mV, 1 A, 150 °C
- Manufacturer: NEXPERIA
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:600mV; Forward Surge Current Ifsm Max:1A; Operating Temperature Ma
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: RB520
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-523
- Diode Configuration: Single
- Forward Voltage Max: 600mV
- Forward Surge Current: 1A
- Reverse Recovery Time: -
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.061 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia **==> picture [63 x 51] intentionally omitted <==** ## **RB520S30** ## **200 mA low VF** **Rev. 01 — 6 October 2009 Product data sheet** ## **1.** ## **1.1 General description** integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. ## **1.2 Features** - I Average forward current: IF(AV) ≤ 0.2 A - I Reverse voltage: VR ≤ 30 V - I Low reverse current: IR ≤ 1 µA - I - I ## **1.3 Applications** I - I - I Switch Mode Power Supply (SMPS) - I Reverse polarity protection - I Low power consumption applications ## **1.4 Quick reference data** **Table 1. Quick reference data** ## Tj = 25 ° |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |IF(AV)<br>average forward current|square wave;<br>δ= 0.5;<br>f = 20 kHz| ||Tamb≤105°C<br>[1] -<br>-<br>0.2<br>A| ||Tsp≤135°C<br>-<br>-<br>0.2<br>A| |IR<br>reverse current|VR= 10 V<br>-<br>-<br>1<br>µA| |VR<br>reverse voltage|-<br>-<br>30<br>V| |VF<br>forward voltage|IF= 0.2 A<br>[2] -<br>520<br>600<br>mV| - [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, mounting pad for cathode 1 cm[2] . - [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. **==> picture [211 x 101] intentionally omitted <==** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **2. Pinning information** **Table 2. Pinning** |**Pin**|**Description**||**Simplifed outline**|**Simplifed outline**|**Simplifed outline**|**Simplifed outline**|**Simplifed outline**|**Simplifed outline**|**Graphic**|**symbol**| |---|---|---|---|---|---|---|---|---|---|---| |1|cathode|[1]||||||||| |2|anode|||1|||2||1|2| |||||||||||sym001| [1] The marking bar indicates the cathode. ## **3. Ordering information** |**formation**|**formation**|**formation**|**formation**| |---|---|---|---| |**Table 3.**<br>**Ordering information**|||| |**Type number**|**Package**||| ||**Name**|**Description**|**Version**| |RB520S30|SC-79<br>plastic surface-mounted package; 2 leads<br>SOD523||| ## **4. Marking** |**Table 4.**|**Marking codes**|| |---|---|---| |**Type number**||**Marking code**| |RB520S30||ZA| ## **5. Limiting values** ## **Table 5. Limiting values** In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VR<br>reverse voltage|Tj= 25°C<br>-<br>30<br>V| |IF(AV)<br>average forward current|square wave;<br>δ= 0.5;<br>f = 20 kHz| ||Tamb≤105°C<br>[1] -<br>0.2<br>A| ||Tsp≤135°C<br>-<br>0.2<br>A| |IFSM<br>non-repetitive peak<br>forward current|tp= 8.3 ms<br>half sine wave;<br>JEDEC method<br>[2] -<br>1<br>A| |Ptot<br>total power dissipation|Tamb≤25°C<br>[3]<br>[4] -<br>275<br>mW<br>[3]<br>[1] -<br>420<br>mW<br>[3]<br>[5] -<br>500<br>mW| © NXP B.V. 2009. All rights reserved. RB520S30_1 **Product data sheet** **Rev. 01 — 6 October 2009** **2 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** **Table 5. Limiting values** …continued In accordance with the Absolute Maximum Rating System (IEC 60134). |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |Tj|junction temperature||-|150|°C| |Tamb|ambient temperature||−55|+150|°C| |Tstg|storage temperature||−65|+150|°C| - [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . - [2] Tj = 25 °C prior to surge. - [3] - [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. - [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. ## **6. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|[1]<br>[2]<br>[3]|-|-|455|K/W| ||||[4]|-|-|300|K/W| ||||[5]|-|-|250|K/W| |Rth(j-sp)|thermal resistance from||[6]|-|-|90|K/W| ||junction to solder point||||||| - [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. - [2] - [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. - [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm[2] . - [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. - [6] Soldering point of cathode tab. © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **3 of 12** **RB520S30** **NXP Semiconductors** ## **200 mA low VF** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab700<br>10 [3]<br>duty cycle =<br>Zth(j-a) 1<br>(K/W) 0.75<br>0.5<br>0.33<br>10 [2] 0.25<br>0.2<br>0.1<br>0.05<br>10 0.02 0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, standard footprint **Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab701<br>10 [3]<br>Zth(j-a) duty cycle =<br>(K/W) 1<br>0.75<br>0.5<br>10 [2] 0.33<br>0.25<br>0.2<br>0.1<br>0.05<br>10<br>0.02 0.01<br>0<br>1<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, mounting pad for cathode 1 cm[2] **Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **4 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **7. Characteristics** ## **Table 7. Characteristics** Tj = 25 ° **==> picture [497 x 476] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Conditions Min Typ Max Unit<br>VF forward voltage [1]<br>IF = 0.1 mA - 190 220 mV<br>IF = 1 mA - 250 290 mV<br>IF = 10 mA - 320 360 mV<br>IF = 100 mA - 440 500 mV<br>IF = 200 mA - 520 600 mV<br>IR reverse current VR = 10 V - - 1 µA<br>Cd diode capacitance f = 1 MHz; VR = 1 V - - 20 pF<br>[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.<br>006aab702 006aab703<br>1 10 [−][3]<br>IR (1)<br>IF (A)<br>(A) 10 [−][4]<br>(1)<br>10 [−][1] (2) (2)<br>10 [−][5]<br>10 [−][2] (3) (4) (5) 10 [−][6] (3)<br>(4)<br>10 [−][7]<br>10 [−][3]<br>10 [−][8]<br>10 [−][4] 10 [−][9]<br>0.0 0.2 0.4 0.6 0.8 0 10 20 30<br>VF (V) VR (V)<br>(1) Tj = 150 °C (1) Tj = 125 °C<br>(2) Tj = 125 °C (2) Tj = 85 °C<br>(3) Tj = 85 °C (3) Tj = 25 °C<br>(4) Tj = 25 °C (4) Tj = −40 °C<br>(5) Tj = −40 °C<br>Fig 3. Forward current as a function of forward Fig 4. Reverse current as a function of reverse<br>voltage; typical values voltage; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **5 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** **==> picture [497 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab704 006aab705<br>35 0.20<br>(pF)Cd PF(AV)<br>30 (W) (4)<br>0.16<br>25 (3)<br>0.12<br>20<br>(2)<br>(1)<br>15<br>0.08<br>10<br>0.04<br>5<br>0 0.0<br>0 10 20 30 0.0 0.1 0.2 0.3<br>VR (V) IF(AV) (A)<br>f = 1 MHz; Tamb = 25 °C Tj = 150 °C<br>(1) δ = 0.1<br>(2) δ = 0.2<br>(3) δ = 0.5<br>(4) δ = 1<br>Fig 5. Diode capacitance as a function of reverse Fig 6. Average forward power dissipation as a<br>voltage; typical values function of average forward current; typical<br>values<br>006aab706 006aab707<br>0.01 0.3<br>PR(AV) (1)<br>(W) IF(AV)<br>0.008 (A)<br>(2)<br>0.2<br>(1)<br>0.006<br>(2)<br>(3)<br>(3)<br>0.004<br>(4) 0.1 (4)<br>0.002<br>0.0 0.0<br>0 10 20 30 0 25 50 75 100 125 150 175<br>VR (V) Tamb (°C)<br>Tj = 125 °C FR4 PCB, standard footprint<br>(1) δ = 1 Tj = 150 °C<br>(2) δ = 0.9 (1) δ = 1; DC<br>(3) δ = 0.8 (2) δ = 0.5; f = 20 kHz<br>(4) δ = 0.5 (3) δ = 0.2; f = 20 kHz<br>(4) δ = 0.1; f = 20 kHz<br>Fig 7. Average reverse power dissipation as a Fig 8. Average forward current as a function of<br>function of reverse voltage; typical values ambient temperature; typical values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **6 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** **==> picture [497 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> 006aab708 006aab709<br>0.3 0.3<br>(1) (1)<br>IF(AV) IF(AV)<br>(A) (A)<br>(2) (2)<br>0.2 0.2<br>(3) (3)<br>0.1 (4) 0.1 (4)<br>0.0 0.0<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>Tamb (°C) Tsp (°C)<br>FR4 PCB, mounting pad for cathode 1 cm [2] Tj = 150 °C<br>Tj = 150 °C (1) δ = 1; DC<br>(1) δ = 1; DC (2) δ = 0.5; f = 20 kHz<br>(2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz<br>(3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz<br>(4) δ = 0.1; f = 20 kHz<br>Fig 9. Average forward current as a function of Fig 10. Average forward current as a function of<br>ambient temperature; typical values solder point temperature; typical values<br>**----- End of picture text -----**<br> ## **8. Test information** **==> picture [453 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> tr tp<br>t<br>D.U.T.<br>10 %<br>RS = 50 Ω IF SAMPLING + IF trr t<br>OSCILLOSCOPE<br>V = VR + IF × RS Ri = 50 Ω<br>90 % (1)<br>VR<br>mga881<br>input signal output signal<br>**----- End of picture text -----**<br> - (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns ## **Fig 11. Reverse recovery time test circuit and waveforms** © NXP B.V. 2009. All rights reserved. RB520S30_1 **Product data sheet** **Rev. 01 — 6 October 2009** **7 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** **==> picture [251 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>Fig 12. Duty cycle definition<br>**----- End of picture text -----**<br> The current ratings for the typical waveforms as shown in Figure 8, 9 and 10 are calculated according to the equations: _I F_ ( _AV_ ) = _I M_ × δ with IM defined as peak current, _I RMS_ = _I F_ ( _AV_ ) at DC, and _I RMS_ = _I M_ × δ with IRMS defined as RMS current. ## **8.1 Quality information** (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. ## **9. Package outline** **==> picture [310 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 0.85 0.65<br>0.75 0.58<br>1<br>1.65 1.25<br>1.55 1.15<br>2<br>0.34 0.17<br>0.26 0.11<br>Dimensions in mm 02-12-13<br>Fig 13. Package outline SOD523 (SC-79)<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **8 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **10. Packing information** **Table 8. Packing methods** The indicated -xxx are the last three digits of the 12NC ordering code ~~.~~ [1] |**Type number**<br>**Package**|**Description**|**Packing quantity**|**Packing quantity**|**Packing quantity**| |---|---|---|---|---| |||**3000**|**8000**|**10000**| |RB520S30<br>SOD523|2 mm pitch, 8 mm tape and reel|-<br>-315<br>-||| ||4 mm pitch, 8 mm tape and reel|-115<br>-<br>-135||| [1] For further information and the availability of packing methods, see Section 14. ## **11. Soldering** **==> picture [315 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 2.15<br>1.1<br>solder lands<br>solder resist<br>0.5 0.6<br>1.2<br>(2×) (2×)<br>solder paste<br>occupied area<br>0.7 Dimensions in mm<br>(2×)<br>0.8<br>(2×) sod523_fr<br>**----- End of picture text -----**<br> **Fig 14.** © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **9 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **12. Revision history** |**Table 9.**|**Revision**|**history**|||| |---|---|---|---|---|---| |**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |RB520S30_1||20091006|Product data sheet|-|-| © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **10 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **13. Legal information** ## **13.1 Data sheet status** |**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**| |---|---| |Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.|| |Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.|| |Product [short] data sheet<br>Production<br>This document contains the product specifcation.|| [1] Please consult the most recently issued document before initiating or completing a design. [2] [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **13.2** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **13.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. ## **13.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **14. Contact information** For more information, please visit: **http://www.nxp.com** **salesaddresses@nxp.com** © NXP B.V. 2009. All rights reserved. RB520S30_1 **Rev. 01 — 6 October 2009** **Product data sheet** **11 of 12** **RB520S30** **NXP Semiconductors** **200 mA low VF** ## **15. Contents** |**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**6**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 3**| |**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7**| |8.1|Quality information . . . . . . . . . . . . . . . . . . . . . . 8| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**10**|**Packing information. . . . . . . . . . . . . . . . . . . . . . 9**| |**11**|**Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**12**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**13**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 11**| |13.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11| |13.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |13.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |13.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**14**|**Contact information. . . . . . . . . . . . . . . . . . . . . 11**| |**15**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**| **==> picture [151 x 121] intentionally omitted <==** Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2009.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 6 October 2009 Document identifier: RB520S30_1**
Updated at April 29, 2026
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