NYC0102BLT1G

**Thyristors** Surface Mount – 200V  >   NYC0102BLT1G 

~~RoHS Pb HFL_1@~~ 

## NYC0102BLT1G 

## **Description** 

This NYC0102 SCR thyristor has been designed for lowpower switching applications by implementing a sensitive gate triggered component. 

## **Features** 

- High dv/dt noise • RoHS compliant and immunity Halogen Free/BFR free, 

- • Gating Current < 200 µA Lead-Free (micro amp) 

- Miniature SOT−23 Package for High Density PCB 

## **Functional Diagram** 

## **Pin Out** 

**3/A 1/K** % **2/G** 

## **Additional Information** 

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| [et] |<br>Datasheet Resources Samples<br>a<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 200V  >   NYC0102BLT1G 

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Maximum Ratings   (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1)(RGK = IK, TJ -40 to +110°C, Sine Wave, 50 to 60 Hz) VDRM  &  VRRM 200 V<br>On-State RMS Current  (All Conduction Angles; TC = 80°C) IT  (RMS)  0.25 A<br>Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TA = 25°C) ITSM 7.0 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 0.2 A²sec<br>Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TA = 25°C) PGM 0.1 W<br>Forward Average Gate Power (t = 8.3 ms, TA = 25°C) PGM (AV) 0.02 W<br>Forward Peak Gate Current  (Pulse Width ≤ 20 s, TA = 25°C) IFGM 0.5 A<br>Reverse Peak Gate Voltage  (Pulse Width ≤ 1.0 s, TA = 25°C) VRGM 8.0 V<br>Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +125 °C<br>Storage Temperature Range Tstg -40 to +150 °C<br>Thermal Characteristics<br>Rating Symbol Value Unit<br>Total Component Dissipation FR−5 Board    TA = 25°C PD 225 mW<br>Thermal Resistance, Junction−to−Ambient R Ɵ JA 380 °C/W<br>Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not<br>implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative  and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative<br>potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the components are exceeded.<br>Electrical Characteristics - OFF<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward Blocking Current  (Note 3) (VDRM =200V, RGK=1kΩ )  TTJJ = 125°C = 25°C IDRM -- -- 1001.0 μA<br>Peak Repetitive Reverse Blocking Current( VRRM=200V, RGK = 1 kΩ )  TTJJ = 125°C = 25°C IRRM -- -- 1001.0<br>Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Forward On-State Voltage   (ITM = 0.4 A, tp < 1 ms, TC = 25°C) VTM − − 1.7 V<br>Gate Trigger Current  (VD = 12 V, RL = 100 Ω, TC = 25°C) IGT − − 200 µA<br>Gate Trigger Voltage  (VD = 12 V, RL = 100 Ω, TC = 25°C) VGT − − 0.8 V<br>Holding Current  (IT = 50 mA, RGK = 1 kΩ, TC = 25°C) IH − − 6.0 mA<br>Gate Non−Trigger Voltage  (VD = VDRM, RL = 3.3 kΩ, TC = 125°C) VGD 0.1 _ − V<br>Latching Current  (IG = 1.0 mA, RGK = 1 kΩ, TC = 25°C) IL − − 7.0 mA<br>Gate Reverse Voltage  (IRG = 10 µA) VRG 8.0 _ − V<br>Dynamic Characteristics<br>Characteristic Symbol Min Typ Max Unit<br>Critical Rate-of-Rise of Off State Voltage dv/dt 200 − − V/µs<br>(RGK = 1 KΩ, TC = 125°C)<br>Critical Rate of Rise of On−State Current(IG = 2xIGT 60 Hz, tr < 100 ns, TJ = 125°C) di/dt − − 50 A/μs<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the component. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect component reliability. 

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative  and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the components are exceeded. 

© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 200V  >   NYC0102BLT1G 

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## **Voltage/Current Characteristics of SCR** 

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Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>Figure 1. Maximum Average Power vs. Average Current<br>0.25<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 .050 .1 0.15 0.2<br>IT, AVERAGE CURRENT (A)<br>P, AVERAGE POWER (W)<br>**----- End of picture text -----**<br>


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Figure 3. Surge Current ITSM vs. Number of Cycles<br>**----- End of picture text -----**<br>


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 (A)<br>ITSM<br>**----- End of picture text -----**<br>


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+Current<br>Anode+<br>VTM<br>IRRM at VRRM on state IH<br>+Voltage/Current<br>Reverse Blocking Region IDRM at VDRM<br>(off state)<br>Forward Blocking Region<br>Reverse Avalanche Region (off state)<br>Anode-<br>Figure 2. Current Derating<br>0.3<br>0.25<br>0.2<br>0.15<br>0.1<br>0.05<br>T, Temperature (°C)<br>Figure 4. Thermal Response<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>1 E-04 1 E-03 1 E-02 1 E-01 1 E+00 1 E+01 1 E+02 1 E+03<br>Pulse Duration (S)<br>, Average Current (A)IT<br>(Normalized)<br>Transient Resistance<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 200V  >   NYC0102BLT1G 

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Figure 5. On−State Characteristics<br>**----- End of picture text -----**<br>


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10<br>1<br>0<br>0.1 0.5 1 1.5 2 2.5<br> (A)<br>ITM<br>**----- End of picture text -----**<br>


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Figure 8. Gate Trigger Current vs. RGK<br>0.07<br>0.06<br>0.05<br>0.04<br>0.03<br>0.02<br>0.01<br>0<br>0 2 4 6 8 10 12<br>RGK (kΩ)<br> (mA)<br>IGT<br>**----- End of picture text -----**<br>


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Figure 10. dV/dt vs. RGK<br>**----- End of picture text -----**<br>


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dv/dt (V/µs)<br>**----- End of picture text -----**<br>


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Figure 6. Gate Trigger Current vs. TJ (Normalized to 25 C)<br>**----- End of picture text -----**<br>


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2<br>1.5<br>Ω<br>1<br>0.5<br>0<br>Figure 9. Holding and Latching Current vs.RGK<br>25<br>20<br>15<br>10<br>5.0<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>RGK (kΩ)<br> (mA),IILH<br>**----- End of picture text -----**<br>


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Figure 11. Gate Triggering Voltage vs. TJ<br>1.0<br>0.80<br>0.60<br>0.40<br>0.20<br>0<br>200 250 300 350 400<br>TJ (K)<br> (V)<br>GT<br>V<br>**----- End of picture text -----**<br>


© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19 

**Thyristors** Surface Mount – 200V  >   NYC0102BLT1G 

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Dimensions<br>**----- End of picture text -----**<br>


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D<br>SEE VIEW C<br>3<br>E HE<br>c<br>12<br>b<br>e 0.25<br>A<br>L<br>A1<br>L1<br>VIEW C<br>**----- End of picture text -----**<br>


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Inches Millimeters<br>Dim<br>Min Nom Max Min Nom Max<br>A 0.035 0.041 0.046 0.89 1.03 1.17<br>A1 0.001 0.004 0.006 0.05 0.10 0.15<br>b 0.012 0.016 0.020 0.30 0.40 0.50<br>c 0.003 0.006 0.008 0.08 0.14 0.20<br>D 0.110 0.114 0.118 2.80 2.90 3.00<br>E 0.047 0.051 0.055 1.20 1.30 1.40<br>e --- 0.075 --- --- 1.90 ---<br>L 0.016 0.019 0.023 0.40 0.49 0.58<br>L1 0.018 0.022 0.025 0.46 0.55 0.64<br>HE 0.083 0.091 0.098 2.10 2.30 2.49<br>ø 0° --- 10° 0° --- 10°<br>**----- End of picture text -----**<br>


1. Diminishing and tolerancing per ANSI Y 14.5M, 1982. 

2. Controlling Dimension: Inch 

3. Maximum lead thickness includes lead finish thickness. Minimum lead thickness is the minimum thickness of base material. 

4. Dimensions D and E do not include mold flash, protrusions, or gate burrs. 

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Soldering Footprint<br>0.95<br>0.95 0.037<br>0.037<br>2.0<br>0.079<br>0.9<br>0.035<br>SCALE 10:1 inchesmm<br>0.8<br>0.031<br>Part Marking System<br>3<br>1<br>2 C2B YMA<br>1<br>CASE 318<br>STYLE 8<br>C2B= Specific Device Code<br>YMA= Date Code*<br>. Pb-Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or overbar may vary depending<br>upon manufacturing location.<br>Pin Assignment<br>1 Cathode<br>2 Gate<br>3 Anode<br>Ordering Information<br>Device Package Shipping<br>SOT-23<br>NYC0102BLT1G 3000/Tape & Reel/Box<br>(Pb-Free)<br>**----- End of picture text -----**<br>


**Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics 

© 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/15/19