NVHL027N65S3F

NVHL027N65S3F 

## Power MOSFET, N-Channel, SUPERFET III, FRFET , 650 V, 75 A, 27.4 m Q 

## **Description** 

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 

Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. 

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**VDSS RDS(ON) MAX ID MAX** ~~rs~~ 650 V 27.4 m ~~ee~~ @ 10 V 75 A ~~ee~~ 

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SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 

## **Features** 

G 

- 700 V @ TJ = 150°C 

- Typ. RDS(on) = 21.5 m 

- Ultra Low Gate Charge (Typ. Qg = 227 nC) 

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## **POWER MOSFET** 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 1880 pF) 

- 100% Avalanche Tested 

- AEC−Q101 Qualified and PPAP Capable 

## **Applications** 

- Automotive On Board Charger HEV−EV 

- Automotive DC/DC Converter for HEV−EV 

G D S **TO−247 LONG LEADS CASE 340CX** 

## **MARKING DIAGRAM** 

$Y&Z&3&K NVHL 027N65S3F 

$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVHL027N65S3F = Specific Device Code 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **NVHL027N65S3F/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **January, 2019 − Rev. 2** 

**NVHL027N65S3F** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise noted) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C, Unless other|wise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**NVHL027N65S3F**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|− DC|±30|V|
|||− AC (f > 1 Hz)|±30||
|ID|Drain Current|− Continuous (TC= 25°C)|75|A|
|||− Continuous (TC= 100°C)|60||
|IDM|Drain Current|− Pulsed (Note 1)|187.5|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||1610|mJ|
|IAS|Avalanche Current (Note 2)||15|A|
|EAR|Repetitive Avalanche Energy (Note 1)||5.95|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||50||
|PD|Power Dissipation|(TC= 25°C)|595|W|
|||− Derate Above 25°C|4.76|W/°C|
|TJ, TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″f|rom Case for 5 seconds|300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 15 A, RG =  25 � , starting TJ = 25 ° C. 

3. ISD ≤ 37.5 A, di/dt ≤ 200 A/ � s, VDD ≤ 400 V, starting TJ = 25 ° C. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**NVHL027N65S3F**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction to Case, Max.|0.21|�C/W|
|R�JA|Thermal Resistance, Junction to Ambient, Max.|40||



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|NVHL027N65S3F|NVHL027N65S3F|TO−247|Tube|N/A|N/A|30 Units|



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**NVHL027N65S3F** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25°C unles|s otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain to Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25�C|650|−|−|V|
|||VGS= 0 V, ID= 10 mA, TJ= 150�C|700|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 20 mA, Referenced to 25�C|−|0.61|−|V/�C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|−|−|10|�A|
|||VDS= 520 V, TC= 125�C|−|590|−||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate Threshold Voltage|VGS= VDS, ID= 3 mA|3.0|−|5.0|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 35 A|−|21.5|27.4|m�|
|gFS|Forward Transconductance|VDS= 20 V, ID= 37.5 A|−|57|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|7780|−|pF|
|Coss|Output Capacitance||−|200|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|1880|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|347|−|pF|
|Qg(tot)|Total Gate Charge at 10 V|VDS= 400 V, ID= 37.5 A, VGS= 10 V<br>(Note 4)|−|227|−|nC|
|Qgs|Gate to Source Gate Charge||−|67|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|87|−|nC|
|ESR|Equivalent Series Resistance|f = 1 MHz|−|2.2|−|�|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 37.5 A, VGS= 10 V<br>Rg= 2�<br>(Note 4)|−|46|−|ns|
|tr|Turn-On Rise Time||−|59|−|ns|
|td(off)|Turn-Off Delay Time||−|147|−|ns|
|tf|Turn-Off Fall Time||−|42|−|ns|
|**SOURCE-DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source to Drain Diode Forward Current||−|−|75|A|
|ISM|Maximum Pulsed Source to Drain Diode Forward Current||−|−|187.5|A|
|VSD|Source to Drain Diode Forward Voltage|VGS=  0 V, ISD=  37.5 A|−|−|1.3|V|
|trr|Reverse Recovery Time|VGS=  0 V, ISD=  37.5 A,<br>dIF/dt = 100 A/�s|−|179|−|ns|
|Qrr|Reverse Recovery Charge||−|1098|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. 

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**NVHL027N65S3F** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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200 VGS = 10.0 V<br>            8.0 V<br>100             7.0 V<br>            6.5 V<br>            6.0 V<br>            5.5 V<br>10<br>250 s Pulse Test<br>TC = 25 C<br>1<br>0.2 1 10 20<br>VDS, Drain−Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

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300<br>V DS = 20V<br>250 s Pulse Test<br>100<br>150oC<br>10<br>25oC<br>−55 o C<br>1<br>2 3 4 5 6 7 8<br>VGS, Gate−Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 3. Transfer Characteristics** 

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1000<br>VGS= 0 V<br>250 s Pulse Test<br>100<br>150 [o] C<br>10<br>25 [o] C<br>1<br>0.1 −55 o C<br>0.01<br>0.001<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Body Diode Forward Voltage (V)<br>, Reverse Drain Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

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200 VGS=10.0V<br>8.0V<br>100 7.0V<br>6.5V<br>6.0V<br>5.5V<br>10<br>250 s Pulse Test<br>TC = 150 [o] C<br>1 ape<br>0.1 1 10 20<br>VDS, Drain−Source Voltage (V)<br>Figure 2. On−Region Characteristics<br>0.04<br>TC = 25 [o] C<br>0.03<br>VGS= 10V<br>0.02<br>VGS= 20V<br>0.01<br>0 50 100 150 200<br>ID, Drain Current (A)<br>Figure 4. On−Resistance Variation vs.<br>Drain Current and Gate Voltage<br>1000000<br>100000<br>Ciss<br>10000<br>1000 Coss<br>100<br>10 VGS = 0V<br>f = 1MHz<br>1 Ciss = Cgs + Cgd (Cds = shorted) Crss<br>Coss = Cds + Cgd<br>Crss = Cgd<br>0.1<br>10 [−1] 10 [0] 10 [1] 10 [2] 10 [3]<br>VDS, Drain−Source Voltage (V)<br>, Drain Current (A)<br>ID<br>)<br>, Drain−Source<br>DS(ON) On−Resistance (<br>R<br>Capacitances (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance Characteristics** 

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**NVHL027N65S3F** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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10 1.2<br>ID= 37.5 A VGS= 0 V<br>ID = 20 mA<br>8 VDS= 130 V<br>1.1<br>VDS = 400 V<br>6<br>1.0<br>4<br>2 0.9<br>0<br>0 60 120 180 240 300 0.8<br>Qg, Total Gate Charge (nC) −50 TJ, Junction Temperature (0 50 100 � C) 150<br>Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs.<br>Temperature<br>3.0 500<br>VGS= 10 V<br>ID= 35 A 30�s<br>2.5<br>100<br>100�s<br>2.0 1ms<br>10ms<br>10<br>1.5<br>DC<br>1.0 Operation in This Area<br>is Limited by RDS(on)<br>1<br>0.5 TC= 25 [o] C<br>TJ = 150 [o] C<br>0.0 0.1 Single Pulse<br>−50 0 50 100 150<br>1 10 100 1000<br>TJ, Junction Temperature ( � C) VDS, Drain−Source Voltage (V)<br>Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area<br>80 60<br>60 45<br>40 30<br>20 15<br>0 0<br>25 50 75 100 125 150 0 130 260 390 520 650<br>TC, Case Temperature ( � C) VDS, Drain to Source Voltage (V)<br>, Gate−Source Voltage (V) , Drain−Source Breakdown Voltage (Normalized)<br>VGS DSS<br>B<br>, Drain−Source<br>, Drain Current (A)<br>RDS(on) ID<br>On−Resistance (Normalized)<br>J)<br>�<br> (<br>OSS<br>E<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Drain Current vs. Case Temperature** 

**Figure 12. EOSS vs. Drain to Source Voltage** 

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**NVHL027N65S3F** 

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TYPICAL PERFORMANCE CHARACTERISTICS  (continued)<br>**----- End of picture text -----**<br>


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1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 25 50 75 100 125 150<br>TC, Case Temperature ( [o] C)<br>Power Dissipation Multiplier<br>**----- End of picture text -----**<br>


**Figure 13. Normalized Power Dissipation vs. Case Temperature** 

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5000<br>VGS = 10V FOR TEMPERATURES TC = 25 [o] C<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>1000<br>I = I 25 150 − T C<br>125<br>100<br>SINGLE PULSE<br>10<br>10−5 10−4 10−3 10−2 10−1 100 101<br>t, Rectangular Pulse Duration (s)<br>Figure 14. Peak Current Capability<br>300<br>If R = 0<br>tAV = (L)(I AS)/(1.3*RATED BV DSS − VDD)<br>If R = /  0<br>tAV = (L/R)ln[(I AS*R)/(1.3*RATED BV DSS − VDD) +1]<br>100<br>Starting TJ = 25 [o] C<br>10<br>Starting TJ= 125 [o] C<br>1<br>0.001 0.01 0.1 1 10 100<br>tAV, Time In Avalanche (ms)<br>NOTE: Refer to Fairchild Application Notes AN7514 and AN7515<br> Peak Current (A)IDM ,<br>, Avalanche Current (A)<br>IAS<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Capability** 

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**NVHL027N65S3F** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (continued) 

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120 1.2<br>Pulse Duration = 250 �s VGS = V DS<br>100 Duty Cycle = 0.5% Max I D =  35 A I D = 3 mA<br>1.0<br>80<br>60 TJ = 150 [o] C 0.8<br>40<br>0.6<br>20 T J  = 25 [o] C<br>0 0.4<br>6 7 8 9 10 −50 0 50 100 150<br>VGS, Gate−Source Voltage (V) TJ , Junction Temperature (oC)<br>)<br>�<br>m<br>, Drain−Source Normalized Gate<br>Threshold Voltage<br>DS(on)<br>R On−Resistance (<br>**----- End of picture text -----**<br>


**Figure 16. RDSON vs. Gate Voltage** 

**Figure 17. Normalized Gate Threshold Voltage vs. Temperature** 

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2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05 P DM<br>0.02<br>0.01 t1<br>t 2<br>0.01<br>Z � JC(t) = r(t) x R � JC<br>R � JC = 0.21 ° C/W<br>Peak T J = PDM x Z � JC (t) + T C<br>SINGLE PULSE<br>Duty Cycle, D = t1 / t2<br>0.00 1<br>10−5 10−4 10−3 10−2 10−1 100 101 102<br>t, Rectangular Pulse Duration (sec)<br>Figure 18. Transient Thermal Response Curve<br>Thermal Resistance<br>r(t), Normalized Effective Transient<br>**----- End of picture text -----**<br>


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VGS<br>RL Qg<br>VGS VDS Qgs Qgd<br>DUT<br>IG = Const.<br>Charge<br>**----- End of picture text -----**<br>


**Figure 19. Gate Charge Test Circuit & Waveform** 

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VDS RL VDS 90% 90% 90%<br>VGS VDD<br>RG<br>10% 10%<br>DUT VGS<br>VGS<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br>


**Figure 20. Resistive Switching Test Circuit & Waveforms** 

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L<br>VDS EAS  � [1] 2 � LIAS2<br>BVDSS<br>ID<br>IAS<br>RG VDD ID(t)<br>VGS DUT VDD VDS(t)<br>t<br>p Time<br>t<br>p<br>**----- End of picture text -----**<br>


**Figure 21. Unclamped Inductive Switching Test Circuit & Waveforms** 

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+<br>DUT<br>VDS<br>−<br>ISD<br>L<br>Driver<br>RG<br>Same Type<br>as DUT<br>VDD<br>VGS<br>− dv/dt controlled by RG<br>− ISD controlled by pulse period<br>Gate Pulse Width<br>D  �<br>Gate Pulse Period<br>VGS 10 V<br>(Driver)<br>IFM, Body Diode Forward Current<br>ISD di/dt<br>(DUT)<br>IRM<br>Body Diode Reverse Current<br>Body Diode Recovery dv/dt<br>VDS<br>(DUT) VSD VDD<br>Body Diode<br>Forward Voltage Drop<br>**----- End of picture text -----**<br>


**Figure 22. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

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