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NTUD3169CZT5G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 220 mA, 220 mA, 0.75 ohm
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.75ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Powe
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-963
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 125mW
- Power Dissipation P Channel: 125mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 220mA
- Continuous Drain Current Id P Channel: 220mA
- Drain Source On State Resistance N Channel: 0.75ohm
- Drain Source On State Resistance P Channel: 0.75ohm
| Delivery and price | |
|---|---|
| Units per pack | 24000 |
| Price | 0.039 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
NTUD3169CZ ## Small Signal MOSFET ## **20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package** ## **Features** ## **www.onsemi.com** - Complementary MOSFET Device - Offers a Low R Solution in the Ultra Small 1.0x1.0 mm DS(on) - Package - 1.5 V Gate Voltage Rating - Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. - This is a Pb−Free Device ## **Applications** - Load Switch with Level Shift - Optimized for Power Management in Ultra Portable Equipment **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise specified) ||||~~es~~|~~ee~~|| |---|---|---|---|---|---| |**Parameter**<br>~~ee~~|||**Symbol**<br>~~ee~~<br>~~es~~<br>~~es~~|**Value**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~| |Drain−to−Source Voltage<br>~~ee~~|||VDSS<br>~~es ~~<br>~~ee~~<br>~~es~~|20<br> ~~ee~~<br>~~ee~~|V<br>~~ee~~| |Gate−to−Source Voltage<br>~~ee~~<br>~~ee~~|||VGS<br>~~ee~~<br>~~es~~<br>~~ee~~|±8<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~| |N−Channel<br>Continuous Drain<br>Current (Note 1)<br>~~Pos~~|Steady<br>State<br>~~eee~~<br>~~Posft~~|TA= 25°C<br>~~eee~~|ID<br>~~eee~~|220<br>~~eee~~|mA| |||TA= 85°C<br>~~eee~~<br>~~|~~<br>~~ft~~||160<br>~~eee~~<br>~~**|**~~|| ||t<br>5 s<br>~~Posft~~|TA= 25°C<br>~~|~~<br>~~ft~~||280<br>~~**|**~~|| |P−Channel<br>Continuous Drain<br>Current (Note 1)<br>~~Pos~~<br>~~Pos~~|Steady<br>State<br>~~Pos ft~~<br>~~pF~~<br>~~Posft~~|TA= 25°C<br>~~|~~<br>~~ft~~<br>~~pF~~||−200<br>~~**|**~~<br>~~|~~|| |||TA= 85°C<br>~~pF~~<br>~~|~~<br>~~ft~~||−140<br>~~|~~<br>~~**|**~~|| ||t<br>5 s<br>~~Posft~~|TA= 25°C<br>~~|~~<br>~~ft~~||−250<br>~~**|**~~|| |Power Dissipation<br>(Note 1)<br>~~Pos~~|Steady<br>State<br>~~Pos ft~~|TA= 25°C<br>~~|~~<br>~~ft~~|PD|125<br>~~**|**~~|mW| ||t<br>5 s|||200|| |Pulsed Drain Current<br>~~a~~|N−Channel<br>~~ee~~|tp= 10 s<br>~~de~~|IDM<br>~~de~~|800<br>~~ee~~|mA<br>~~ee~~| ||P−Channel<br>~~ee~~|||−600<br>~~ee~~|| |Operating Junction and Storage Temperature<br>~~a~~<br>~~ee de~~|||TJ,<br>TSTG<br>~~de ~~|−55 to<br>150<br> ~~ee~~|°C<br>~~ee~~| |Source Current (Body Diode) (Note 2)|||IS|200|mA| |Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~Pp~~|||TL<br>~~Pp~~|260<br>~~Pp~~|°C<br>~~Pp~~| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 2. Pulse Test: pulse width < 300 s, duty cycle Ub < 2% |**V(BR)DSS**|**RDS(on) Max**|**ID Max**| |---|---|---| |N−Channel<br>20 V|1.5 @ 4.5 V|0.22 A| ||2.0 @ 2.5 V|| ||3.0@1.8 V|| ||4.5 @ 1.5 V|| |P−Channel<br>20 V|5.0 @ −4.5 V|−0.2 A| ||6.0 @ −2.5 V|| ||7.0 @ −1.8 V|| ||10 @ −1.5 V|| ## **PINOUT: SOT−963** **==> picture [148 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>Top View<br>MARKING<br>DIAGRAM<br>2 M<br>SOT−963<br>1<br>CASE 527AD<br>2 = Specific Device Code<br>M = Date Code<br>ORDERING INFORMATION<br>**----- End of picture text -----**<br> **Device Package Shipping**[†] NTUD3169CZT5G SOT−963 8000 / (Pb−Free) Tape & Reel ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **NTUD3169CZ/D** **1** © Semiconductor Components Industries, LLC, 2008 **May, 2017 − Rev. 1** **NTUD3169CZ** ## **THERMAL RESISTANCE RATINGS** |**THERMAL RESISTANCE RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient – Steady State, Minimum Pad (Note 3)|R�JA|1000|°C/W| |Junction−to−Ambient – t�5 s (Note 3)||600|| 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTI**|**S**(TJ= 25°C|unless|otherwise specified)|otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|||V| |||P||ID= −250�A|−20|||| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 5.0 V|TJ= 25°C|||50|nA| |||||TJ= 85°C|||200|| |||P|VGS= 0 V, VDS= −5.0 V|TJ= 25°C|||−50|| |||||TJ= 85°C|||−200|| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||100|nA| |||P|VGS= 0 V, VDS= −16 V||||−100|| |Gate−to−Source Leakage Current|IGSS|N|VDS= 0 V, VGS=|±5.0 V|||±100|nA| |||P|||||±100|| |**ON CHARACTERISTICS**(Note 4)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.4||1.0|V| |||P||ID= −250�A|−0.4||−1.0|| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V, ID=|100 mA||0.75|1.5|�| |||P|VGS= −4.5V, ID= −100 mA|||2.0|5.0|| |||N|VGS= 2.5 V, ID= 50 mA|||1.0|2.0|| |||P|VGS= −2.5V, ID= −50 mA|||2.6|6.0|| |||N|VGS= 1.8 V, ID= 20 mA|||1.4|3.0|| |||P|VGS= −1.8V, ID= −20 mA|||3.4|7.0|| |||N|VGS= 1.5 V, ID= 10 mA|||1.8|4.5|| |||P|VGS= −1.5 V, ID= −10 mA|||4.0|10|| |||N|VGS= 1.2 V, ID= 1.0 mA|||2.8||| |||P|VGS= −1.2 V, ID= −1.0 mA|||6.0||| |Forward Transconductance|gFS|N|VDS= 5.0 V, ID= 125 mA|||0.48||S| |||P|VDS= −5.0 V, ID= −125 mA|||0.35||| |Source−Drain Diode Voltage|VSD|N|VGS= 0 V, IS= 10 mA|TJ= 25°C||0.6|1.0|V| |||P|VGS= 0 V, IS= −10 mA|||−0.6|−1.0|| |**CAPACITANCES**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V<br>VDS= 15 V|||12.5||pF| |Output Capacitance|COSS|||||3.6||| |Reverse Transfer Capacitance|CRSS|||||2.6||| |Input Capacitance|CISS|P|f = 1 MHz, VGS= 0 V<br>VDS= −15 V|||13.5||| |Output Capacitance|COSS|||||3.8||| |Reverse Transfer Capacitance|CRSS|||||2.0||| 4. Switching characteristics are independent of operating junction temperatures **www.onsemi.com** **2** ## **NTUD3169CZ** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTI**|**S**(TJ= 25°C|unless|otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 4)|||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= 10 V, ID= 200 mA,<br>RG= 2.0�||16.5||ns| |Rise Time|tr||||25.5||| |Turn−Off Delay Time|td(OFF)||||142||| |Fall Time|tf||||80||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= −15 V,<br>ID= −200 mA, RG= 2.0�||26||| |Rise Time|tr||||46||| |Turn−Off Delay Time|td(OFF)||||196||| |Fall Time|tf||||145||| 4. Switching characteristics are independent of operating junction temperatures **www.onsemi.com** **3** **NTUD3169CZ** ## **TYPICAL CHARACTERISTICS (N−CHANNEL)** **==> picture [491 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4 0.4<br>VGS = 2 thru 5 V TJ = 25 ° C TJ = −55 ° C<br>VDS ≥ 5 V<br>1.8 V TJ = 25 ° C TJ = 125 ° C<br>0.3 1.6 V 0.3<br>1.4 V<br>0.2 0.2<br>1.2 V<br>0.1 0.1<br>0 0<br>0 1 2 3 4 5 0 1 2 3<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>4 1.50<br>ID = 220 mA TJ = 25 ° C<br>TJ = 25 ° C 1.25<br>3 VGS = 2.5 V<br>1.00<br>2 0.75 VGS = 4.5 V<br>0.50<br>1<br>0.25<br>0 0<br>0 1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.75 10,000<br>ID = 100 mA VGS = 0 V<br>1.50 VGS = 4.5 V<br>1.25 1000 TJ = 150 ° C<br>1.00 TJ = 125 ° C<br>100<br>0.75<br>0.50 10<br>−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>SISTANCE ( SISTANCE (<br>, DRAIN−TO−SOURCE RE- , DRAIN−TO−SOURCE RE-<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE- IDSS<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br> **www.onsemi.com** **4** **NTUD3169CZ** ## **TYPICAL CHARACTERISTICS (N−CHANNEL)** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 1000<br>VGS = 0 V VDD = 10 V<br>17.5 Ciss TJ = 25 ° C VIDGS = 200 mA = 4.5 V<br>15.0<br>td(off)<br>100<br>12.5 tf<br>10.0 Coss tr<br>td(on)<br>7.50<br>10<br>5.00<br>Crss<br>2.50<br>0 1<br>0 5 10 15 20 1 10 100<br>GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Variation** **Figure 8. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 0.200<br>VGS = 0 V<br>0.175<br>TJ = 25 ° C<br>0.150<br>0.125<br>0.100<br>0.075<br>0.050<br>0.025<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 9. Diode Forward Voltage vs. Current** **www.onsemi.com** **5** **NTUD3169CZ** ## **TYPICAL CHARACTERISTICS (P−CHANNEL)** **==> picture [491 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> 0.36 0.36<br>2.0 V TJ = 25 ° C VDS ≥ 5 V TJ = −55 ° C TJ = 125 ° C<br>0.32 0.32<br>0.28 VGS = 2.2 thru 5 V 1.8 V 0.28 TJ = 25 ° C<br>0.24 0.24<br>1.6 V<br>0.20 0.20<br>0.16 0.16<br>1.4 V<br>0.12 0.12<br>0.08 1.2 V 0.08<br>0.04 0.04<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics<br>12 4<br>TJ = 25 ° C<br>ID = 200 mA<br>TJ = 25 ° C<br>3<br>8 VGS = 2.5 V<br>2<br>VGS = 4.5 V<br>4<br>1<br>0 0<br>1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current<br>and Gate Voltage<br>1.75 10,000<br>ID = 200 mA<br>VGS = 0 V<br>VGS = 4.5 V<br>1.50<br>1.25 1000 TJ = 150 ° C<br>1.00<br>100 TJ = 125 ° C<br>0.75<br>0.50 10<br>−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 14. On−Resistance Variation with Figure 15. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>SISTANCE ( SISTANCE (<br>, DRAIN−TO−SOURCE RE- , DRAIN−TO−SOURCE RE-<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RE- IDSS<br>SISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **www.onsemi.com** **6** **NTUD3169CZ** ## **TYPICAL CHARACTERISTICS (P−CHANNEL)** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 18 1000<br>16 C iss<br>14 td(off)<br>12 100 tf<br>10 V GS = 0 V tr<br>8 C oss T J = 25 ° C td(on)<br>6 10<br>4 VDD = 10 V<br>2 Crss ID = 200 mA<br>VGS = 4.5 V<br>0 1<br>0 2 4 6 8 10 12 14 16 18 20 1 10 100<br>DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 16. Capacitance Variation** **Figure 17. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [244 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>VGS = 0 V<br>0.16<br>TJ = 25 ° C<br>0.14<br>0.12<br>0.10<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 18. Diode Forward Voltage vs. Current** **www.onsemi.com** **7** **NTUD3169CZ** ## **PACKAGE DIMENSIONS** **SOT−963** CASE 527AD ISSUE E **==> picture [237 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> D X<br>A<br>Y<br>r 6 a 5 t? 4 LE<br>E HE<br>1 2 3 4<br>a a<br>C —> | |e<br>TOP VIEW<br>SIDE VIEW<br>e 6X L<br>=<br>Aaah<br>6X L2 6X b<br>0.08 X Y<br>BOTTOM VIEW<br>to er o<br>**----- End of picture text -----**<br> NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD **==> picture [147 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> FLASH, PROTRUSIONS, OR GATE BURRS.<br>MILLIMETERS<br>DIM MIN NOM MAX<br>A 0.34 0.37 0.40<br>b 0.10 0.15 0.20<br>C 0.07 0.12 0.17<br>D 0.95 1.00 1.05<br>E 0.75 0.80 0.85<br>e 0.35 BSC<br>H E 0.95 1.00 1.05<br>L 0.19 REF<br>= L2 0.05 0.10 0.15<br>RECOMMENDED<br>MOUNTING FOOTPRINT<br>6X 6X<br>0.20 0.35<br>PACKAGE<br>OUTLINE _— =<br>F HBy 1.20<br>0.35 wie<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Updated at June 9, 2026
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