NTJD1155LT2G

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## **-** MOSFET – Power, P Channel, High Side Load Switch with **- -** Level Shift, SC 88 

## 8 V, 1.3 A 

## NTJD1155L 

The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using **onsemi** state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VIN and VON/OFF. 

## **Features** 

- Extremely Low RDS(on) P-Channel Load Switch MOSFET 

- Level Shift MOSFET is ESD Protected 

- Low Profile, Small Footprint Package 

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V(BR)DSS RDS(on) TYP ID MAX<br>130 m  @ −4.5 V<br>8.0 V 170 m  @ −2.5 V ± 1.3 A<br>260 m  @ −1.8 V<br>=<br>SIMPLIFIED SCHEMATIC<br>4 2,3<br>Q2<br>6<br>5 Q1<br>1<br>“ast<br>MARKING<br>SC-88<br>1 DIAGRAM<br>(SOT-363)<br>& CASE 419B-02 oo<br>STYLE 30<br>TB M<br>TB = Device Code<br>M = Date Code<br>= Pb-Free Package 1<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- VIN Range 1.8 to 8.0 V 

- ON/OFF Range 1.5 to 8.0 V 

- These Devices are Pb-Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)<br>~~————~~|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)<br>~~————~~|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)<br>~~————~~|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|---|---|
|**Rating**<br>~~————~~|||**Symbol**|**Value**|**Unit**|
|Input Voltage (VDSS, P-Ch)<br>~~————~~|||VIN<br>~~ee~~|8.0<br>~~ee~~|V|
|ON/OFF Voltage (VGS, N-Ch)<br>~~————~~<br>~~a~~|||VON/OFF<br>~~a~~<br>~~ee~~|8.0<br>~~a~~<br>~~ee~~|V<br>~~a~~|
|Continuous Load Current<br>(Note 1)<br>~~———~~<br>~~a~~<br>~~a~~|Steady<br>State<br>~~————~~<br>~~a~~<br>~~a~~|TA= 25°C<br>~~—~~<br>~~a~~<br>~~a~~<br>~~e~~|IL<br>~~a~~<br>~~ee ~~<br>~~a~~<br>~~ee~~|±1.3<br>~~a~~<br> ~~ee~~<br>~~a~~|A<br>~~a~~<br>~~a~~|
|||TA= 85°C<br>~~a~~<br>~~e~~||±0.9<br>~~a~~||
|Power Dissipation<br>(Note 1)<br>~~ee~~|Steady<br>State<br>~~ee~~<br>~~ee~~|TA= 25°C<br>~~e~~<br>~~ee~~|PD<br>~~ee~~<br>~~ee~~<br>~~ee~~|0.40<br>~~ee~~|W<br>~~ee~~|
|||TA= 85°C<br>~~ee~~<br>~~ee~~||0.20<br>~~ee~~||
|Pulsed Load Current<br>~~ee~~|tp = 10 s<br>~~ee~~<br>~~ee~~||ILM<br>~~ee~~<br>~~ee~~|±3.9<br>~~ee~~|A<br>~~ee~~|
|Operating Junction and Storage Temperature<br>~~ee ~~<br>~~)~~|||TJ, TSTG<br> ~~ee~~<br>~~)~~|−55 to<br>150<br>~~)~~|°C<br>~~)~~|
|Source Current (Body Diode)<br>~~ee~~|||IS<br>~~ee~~|−0.4<br>~~ee~~|A<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~Se~~|||TL<br>~~Se~~|260<br>~~Se~~|°C<br>~~Se~~|



## **THERMAL CHARACTERISTICS** 

## **PIN ASSIGNMENT** 

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D1/G2 G1 S2<br>6 5 4<br>i. |<br>1 2 3<br>S1 D2 D2<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTJD1155LT1G,<br>NTJD1155LT2G|SC-88<br>(Pb-Free)|3000/Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

|**THERMAL CHARACTERISTICS**|~~es~~|||
|---|---|---|---|
|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~es~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|
|Junction-to-Ambient – Steady State (Note 1)|R JA<br>~~es~~|320|°C/W|
|Junction-to-Foot – Steady State (Note 1)|R JF|220||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

Publication Order Number: **NTJD1155L/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **October, 2025 − Rev. 7** 

**NTJD1155L** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ = 25J = 25= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Test Condition**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~Po~~||||||
|Q2 Drain-to-Source Breakdown Voltage<br>VIN<br>VGS2= 0 V, ID2= 250 A<br>−8.0<br>V<br>Forward Leakage Current<br>IFL<br>VGS1= 0 V,<br>VDS2= −8.0 V<br>TJ= 25°C<br>1.0<br>A<br>TJ= 125°C<br>10<br>Q1 Gate-to-Source Leakage Current<br>IGSS<br>VDS1= 0 V, VGS1=±8.0 V<br>±100<br>nA<br>Q1 Diode Forward  On-Voltage<br>VSD<br>IS= −0.4 A, VGS1= 0 V<br>−0.8<br>−1.1<br>V<br>**ON CHARACTERISTICS**<br>~~a~~<br>~~Ge~~<br>~~ee~~<br>~~ee re~~<br>~~ee ee ee~~<br>~~a~~<br>~~pO~~||||||
|ON/OFF Voltage<br>~~a~~|VON/OFF|1.5||8.0|V|
|Q1 Gate Threshold Voltage<br>VGS1(th)<br>VGS1= VDS1, ID= 250 A<br>0.4<br>1.0<br>V<br>~~ee~~||||||
|Input Voltage<br>~~a~~|VIN<br>VGS1= VDS1, ID= 250 A<br>~~Ge~~|1.8||8.0|V|
|Q2 Drain-to-Source On Resistance|RDS(on)<br>VON/OFF= 1.5 V<br>VIN= 4.5 V||130|175|m|
||IL= 1.2 A|||||
||VIN= 2.5 V||170|220||
||IL= 1.0 A|||||
||VIN= 1.8 V||260|320||
||IL= 0.7 A|||||
|Load Current|IL<br>VDROP ≤0.2 V, VIN= 5.0 V,|1.0|||A|
||VON/OFF= 1.5 V|||||
||VDROP ≤0.3 V, VIN= 2.5 V,|1.0||||
||VON/OFF= 1.5 V|||||



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4 ey 2,3<br>VIN OO VOUT<br>Q2<br>R1 C1<br>6 6<br>ON/OFF 5 CO LOAD<br>Q1<br>' 1<br>CI<br>R2<br>R2 OO GND<br>**----- End of picture text -----**<br>


**Figure 1. Load Switch Application** 

~~GO~~ **Components Description Values** R1 Pullup Resistor Typical 10 k to 1.0 M * ~~Ge~~ R2 Optional Slew-Rate Control Typical 0 to 100 k * ~~Ge~~ CO, CI Output Capacitance Usually < 1.0 F ~~eG DG~~ C1 Optional In-Rush Current Control Typical ≤ 1000 pF * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. 

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**NTJD1155L** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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0.70 0.50<br>0.65<br>0.45<br>0.60<br>0.55 YH 0.40 a ee ee ee ee<br>0.500.45 TJ = 125  ° C 0.35 TJ = 125  ° C<br>0.40 ee > 0.30 a a a<br>0.35 a ee ee 0.25<br>0.30<br>0.25 ee TJ ee  = 25  ° C 0.20 TJ = 25  ° C<br>0.150.20 es 0.100.15 a eee<br>0.10<br>a 0.05<br>0.05<br>0 a a 0 iF,ee| lvdT CT lT<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0<br>IL (AMPS) IL (AMPS)<br>Figure 2. Vdrop vs. IL @ Vin = 2.5 V Figure 3. Vdrop vs. IL @ Vin = 4.5 V<br>Ga 0.8 Ga 0.31<br>0.7 IL = 1 A IL = 1 A Vin = 1.8 V<br>VON/OFF = 1.5 to 8 V 0.26 VON/OFF = 1.5 to 8 V —<br>0.6<br>ee<br>0.21<br>0.5<br>0.4 0.16<br>0.3 HEREEER EEE<br>0.11 Vin = 5 V<br>0.2 TJ = 125  ° C<br>0.1 ASa E 0.06 e erE E<br>TJ = 25  ° C<br>0.0 Oa A —_—__ 0.01 —_<br>1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 −50 −25 0 25 50 75 100 125 150<br>VIN (VOLTS) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 4. On-Resistance vs. Input Voltage Figure 5. On-Resistance Variation with<br>Temperature<br>1.7 44<br>IL = 1 A 40 I L  = 1 A<br>VON/OFF = 1.5 to 8 V VON/OFF = 1.5 V<br>LL 36 EET<br>1.5 Ci = 10 F<br>32 Co = 1 F i" | | | [| | tr J<br>28<br>1.3 Pt i Vin = 5 V LL 24 —+—+——ee aFA<br>td(off)<br>ss - 20 Fp of<br>CC C: ECEREEGE<br>1.1<br>Vin = 1.8 V 16 t f<br>12<br>Co pa CORE<br>0.9 —— aie 8 pare<br>4 t d(on)<br>0.7 PPT TTT) 0 |GRREFF, | | EEE| |<br>−50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8<br>TJ, JUNCTION TEMPERATURE ( ° C) R2 (k Q )<br> (V)  (V)<br>DROP DROP<br>V V<br>) )<br>DRAIN-TO-SOURCE RESISTANCE ( DRAIN-TO-SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>s)<br>TIME (<br>DRAIN-TO-SOURCE<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Normalized On-Resistance Variation with Temperature** 

**Figure 7. Switching Variation R2 @ Vin = 4.5 V, R1 = 20 k** Q 

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**NTJD1155L** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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22 40<br>20 36 IL = 1 A<br>18 |Po td(off) | | 32 V Ci = 10 F ON/OFF = 1.5 V |Fo |[| | | || ff] t r |<br>16 ee tf 28 Co = 1 F i FoF!<br>14 a 24 roTflUTt!UCUE!COTSd<br>- 12 | ~- ][ [ |TTT =: 20 es ee ee<br>1086 Ci = 10 F IV L on/off = 1 A = 3 V eeooee eeee 1612 PF | | rE t f rE [EY] td(on)<br>4 Co = 1 F Peete! tr 8 ——— a<br>2 td(on) 4 td(off)<br>0 a 0 a a ce<br>0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8<br>R2 (k ) R2 (k )<br>Figure 8. Switching Variation Figure 9. Switching Variation<br>R2 @ Vin = 4.5 V, R1 = 20 k Q R2 @ Vin = 2.5 V, R1 = 20 k Q<br>s) s)<br>TIME ( TIME (<br>**----- End of picture text -----**<br>


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r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE<br>**----- End of picture text -----**<br>


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12<br>10 tf<br>8 PEE<br>IL = 1 A td(off)<br>: 6 Von/off = 3 V TEX<br>Ci = 10 F<br>Co = 1 F tr<br>4 M N |Le Z|<br>2 | | |} t d(on)<br>0 Perrier] a til<br>0 1 2 3 4 5 6 7 8<br>R2 (k Q )<br>Figure 10. Switching Variation<br>R2 @ Vin = 2.5 V, R1 = 20 k Q<br>10<br>Normalized to R JA at Steady State ( 1 inch pad)<br>SE Oth ey SEE EE<br>ee<br>1 D = 0.5<br>. TLE EE eee eee e e<br>0.2<br>22ee ee — 0 P(pk)<br>0.1 R JC(t) = r(t) R JC<br>0.1 0.05 D CURVES APPLY FOR POWER<br>SS 0.02 i PULSE TRAIN SHOWN<br>0.01 t1 READ TIME AT t1<br>——= SINGLE PULSE —eeeet i t2 TJ(pk) − TC = P(pk) R r) JC(t)<br>DUTY CYCLE, D = t1/t2<br>0.01 EET<br>0.001 0.01 0.1 1 10 100 1000<br>SQUARE WAVE PULSE DURATION TIME t, (s)<br>s)<br>TIME (<br>**----- End of picture text -----**<br>


**Figure 11. FET Thermal Response** 

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**NTJD1155L** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>7<br>Document rebranded to**onsemi**format.<br>10/16/2025<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z 

## DATE 18 APR 2024 

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GENERIC<br>MARKING DIAGRAM*<br>6<br>io o<br>XXXM<br>1 UU U<br>XXX = Specific Device Code<br>M = Date Code*<br>: = Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation and/or position may<br>vary depending upon manufacturing location.<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ : ”, may or may not be present. Some products may not follow the Generic Marking. 

## **STYLES ON PAGE 2** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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DOCUMENT NUMBER: 98ASB42985B<br>**----- End of picture text -----**<br>


## **SC−88 2.00x1.25x0.90, 0.65P** 

## **PAGE 1 OF 2** 

## 

## **DESCRIPTION:** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba onsemi. **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

 Semiconductor Components Industries, LLC, 2019 

## **SC−88 2.00x1.25x0.90, 0.65P** CASE 419B−02 ISSUE Z 

## DATE 18 APR 2024 

|STYLE 1:|STYLE 2:|STYLE 3:|STYLE 4:|STYLE 5:|STYLE 6:|
|---|---|---|---|---|---|
|PIN 1. EMITTER 2|CANCELLED|CANCELLED|PIN 1. CATHODE|PIN 1. ANODE|PIN 1. ANODE 2|
|2. BASE 2|||2. CATHODE|2. ANODE|2. N/C|
|3. COLLECTOR 1|||3. COLLECTOR|3. COLLECTOR|3. CATHODE 1|
|4. EMITTER 1|||4. EMITTER|4. EMITTER|4. ANODE 1|
|5. BASE 1|||5. BASE|5. BASE|5. N/C|
|6. COLLECTOR 2|||6. ANODE|6. CATHODE|6. CATHODE 2|
|STYLE 7:|STYLE 8:|STYLE 9:|STYLE 10:|STYLE 11:|STYLE 12:|
|PIN 1. SOURCE 2|CANCELLED|PIN 1. EMITTER 2|PIN 1. SOURCE 2|PIN 1. CATHODE 2|PIN 1. ANODE 2|
|2. DRAIN 2||2. EMITTER 1|2. SOURCE 1|2. CATHODE 2|2. ANODE 2|
|3. GATE 1||3. COLLECTOR 1|3. GATE 1|3. ANODE 1|3. CATHODE 1|
|4. SOURCE 1||4. BASE 1|4. DRAIN 1|4. CATHODE 1|4. ANODE 1|
|5. DRAIN 1||5. BASE 2|5. DRAIN 2|5. CATHODE 1|5. ANODE 1|
|6. GATE 2||6. COLLECTOR 2|6. GATE 2|6. ANODE 2|6. CATHODE 2|
|STYLE 13:|STYLE 14:|STYLE 15:|STYLE 16:|STYLE 17:|STYLE 18:|
|PIN 1. ANODE|PIN 1. VREF|PIN 1. ANODE 1|PIN 1. BASE 1|PIN 1. BASE 1|PIN 1. VIN1|
|2. N/C|2. GND|2. ANODE 2|2. EMITTER 2|2. EMITTER 1|2. VCC|
|3. COLLECTOR|3. GND|3. ANODE 3|3. COLLECTOR 2|3. COLLECTOR 2|3. VOUT2|
|4. EMITTER|4. IOUT|4. CATHODE 3|4. BASE 2|4. BASE 2|4. VIN2|
|5. BASE|5. VEN|5. CATHODE 2|5. EMITTER 1|5. EMITTER 2|5. GND|
|6. CATHODE|6. VCC|6. CATHODE 1|6. COLLECTOR 1|6. COLLECTOR 1|6. VOUT1|
|STYLE 19:|STYLE 20:|STYLE 21:|STYLE 22:|STYLE 23:|STYLE 24:|
|PIN 1. I OUT|PIN 1. COLLECTOR|PIN 1. ANODE 1|PIN 1. D1 (i)|PIN 1. Vn|PIN 1. CATHODE|
|2. GND|2. COLLECTOR|2. N/C|2. GND|2. CH1|2. ANODE|
|3. GND|3. BASE|3. ANODE 2|3. D2 (i)|3. Vp|3. CATHODE|
|4. V CC|4. EMITTER|4. CATHODE 2|4. D2 (c)|4. N/C|4. CATHODE|
|5. V EN|5. COLLECTOR|5. N/C|5. VBUS|5. CH2|5. CATHODE|
|6. V REF|6. COLLECTOR|6. CATHODE 1|6. D1 (c)|6. N/C|6. CATHODE|
|STYLE 25:|STYLE 26:|STYLE 27:|STYLE 28:|STYLE 29:|STYLE 30:|
|PIN 1. BASE 1|PIN 1. SOURCE 1|PIN 1. BASE 2|PIN 1. DRAIN|PIN 1. ANODE|PIN 1. SOURCE 1|
|2. CATHODE|2. GATE 1|2. BASE 1|2. DRAIN|2. ANODE|2. DRAIN 2|
|3. COLLECTOR 2|3. DRAIN 2|3. COLLECTOR 1|3. GATE|3. COLLECTOR|3. DRAIN 2|
|4. BASE 2|4. SOURCE 2|4. EMITTER 1|4. SOURCE|4. EMITTER|4. SOURCE 2|
|5. EMITTER|5. GATE 2|5. EMITTER 2|5. DRAIN|5. BASE/ANODE|5. GATE 1|
|6. COLLECTOR 1|6. DRAIN 1|6. COLLECTOR 2|6. DRAIN|6. CATHODE|6. DRAIN 1|



Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42985B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−88 2.00x1.25x0.90, 0.65P PAGE 2 OF 2<br>**----- End of picture text -----**<br>


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